@article{goeller_boyanov_sayers_nemanich_myers_steel_1999, title={Germanium segregation in the Co/SiGe/Si(001) thin film system}, volume={14}, DOI={10.1557/JMR.1999.0592}, number={11}, journal={Journal of Materials Research}, author={Goeller, P. T. and Boyanov, B. I. and Sayers, D. E. and Nemanich, R. J. and Myers, A. F. and Steel, E. B.}, year={1999}, pages={4372–4384} }
 @article{boyanov_goeller_sayers_nemanich_1999, title={Growth of epitaxial CoSi2 on SiGe(001)}, volume={86}, DOI={10.1063/1.370894}, number={3}, journal={Journal of Applied Physics}, author={Boyanov, B. I. and Goeller, P. T. and Sayers, D. E. and Nemanich, R. J.}, year={1999}, pages={1355–1362} }
 @article{boyanov_goeller_sayers_nemanich_1999, title={The effect of germanium on the Co-SiGe thin-film reaction}, volume={6}, DOI={10.1107/S0909049599000060}, number={1999 May 1}, journal={Journal of Synchrotron Radiation}, author={Boyanov, B. I. and Goeller, P. T. and Sayers, D. E. and Nemanich, R. J.}, year={1999}, pages={521–523} }
 @article{goeller_boyanov_sayers_nemanich_1998, title={Co-deposition of cobalt disilicide on silicon-germanium thin films}, volume={320}, DOI={10.1016/S0040-6090(97)00941-3}, number={2}, journal={Thin Solid Films}, author={Goeller, P. T. and Boyanov, B. I. and Sayers, D. E. and Nemanich, R. J.}, year={1998}, pages={206–210} }
 @article{boyanov_goeller_sayers_nemanich_1998, title={Film thickness effects in the Co-Si1-xGex solid phase reaction}, volume={84}, DOI={10.1063/1.368872}, number={8}, journal={Journal of Applied Physics}, author={Boyanov, B. I. and Goeller, P. T. and Sayers, D. E. and Nemanich, R. J.}, year={1998}, pages={4285–4291} }
 @article{sayers_goeller_boyanov_nemanich_1998, title={In situ studies of metal-semiconductor interactions with synchrotron radiation}, volume={5}, DOI={10.1107/S0909049597015240}, number={3}, journal={Journal of Synchrotron Radiation}, author={Sayers, D. E. and Goeller, P. T. and Boyanov, B. I. and Nemanich, R. J.}, year={1998}, pages={1050–1051} }
 @article{wang_goeller_boyanov_sayers_nemanich_1997, title={An integrated growth and analysis system for in-situ XAS studies of metal-semiconductor interactions}, volume={7}, DOI={10.1051/jp4/1997096}, number={C2 pt.1}, journal={Journal de Physique. IV}, author={Wang, Z. and Goeller, P. T. and Boyanov, B. I. and Sayers, D. E. and Nemanich, R. J.}, year={1997}, pages={561–564} }
 @article{boyanov_goeller_sayers_nemanich_1997, title={Preferential Co-SI bonding at the Co/SiGe(100) interface}, volume={71}, DOI={10.1063/1.119436}, number={21}, journal={Applied Physics Letters}, author={Boyanov, B. I. and Goeller, P. T. and Sayers, D. E. and Nemanich, R. J.}, year={1997}, pages={3060–3062} }
 @article{goeller_boyanov_sayers_nemanich_1997, title={Structure and stability of cobalt-silicon-germanium thin films}, volume={133}, DOI={10.1016/S0168-583X(97)00458-8}, number={1-4}, journal={Nuclear Instruments & Methods in Physics Research. Section B, Beam Interactions With Materials and Atoms}, author={Goeller, P. T. and Boyanov, B. I. and Sayers, D. E. and Nemanich, R. J.}, year={1997}, pages={84–89} }
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