Sungkee Han

Works (5)

Updated: July 5th, 2023 16:04

2004 journal article

Effect of post-metallization annealing for alternative gate stack devices

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 151(2), F29–F35.

By: I. Kim n, S. Han n & C. Osburn n

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2004 journal article

Stability of advanced gate stack devices

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 151(2), F22–F28.

By: I. Kim n, S. Han n & C. Osburn n

Source: Web Of Science
Added: August 6, 2018

2002 journal article

Vertically scaled MOSFET gate stacks and junctions: How far are we likely to go?

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 46(2-3), 299–315.

By: C. Osburn n, I. Kim n, S. Han n, I. De *, K. Yee, S. Gannavaram*, S. Lee*, C. Lee* ...

TL;DR: The vertical scaling requirements for gate stacks and for shallow extension junctions are reviewed and it seems likely that an EOT of 0.4-0.5 nm would represent the physical limit of dielectric scaling, but even then with a very high leakage. (via Semantic Scholar)
Source: Web Of Science
Added: August 6, 2018

2000 journal article

Fabrication and testing of a microstrip particle detector based on highly oriented diamond films

Diamond and Related Materials, 9(3-6), 1008–1012.

By: S. Han, M. McClure, C. Wolden, B. Vlahovic, A. Soldi & S. Sitar

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Highly oriented diamond deposited using a low pressure flat flame

MATERIALS LETTERS, 32(1), 9–12.

By: C. Wolden n, S. Han n, M. McClure n, Z. Sitar n & J. Prater*

author keywords: diamond; combustion synthesis; highly oriented; x-ray texture analysis; si substrate
UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

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