Works (5)
Updated: July 5th, 2023 16:04
2004 journal article
Effect of post-metallization annealing for alternative gate stack devices
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 151(2), F29–F35.
citeseerx.ist.psu.edu (repository)
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Source: Web Of Science
Added: August 6, 2018
2004 journal article
Stability of advanced gate stack devices
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 151(2), F22–F28.
Source: Web Of Science
Added: August 6, 2018
2002 journal article
Vertically scaled MOSFET gate stacks and junctions: How far are we likely to go?
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 46(2-3), 299–315.
TL;DR:
The vertical scaling requirements for gate stacks and for shallow extension junctions are reviewed and it seems likely that an EOT of 0.4-0.5 nm would represent the physical limit of dielectric scaling, but even then with a very high leakage.
(via Semantic Scholar)
Source: Web Of Science
Added: August 6, 2018
2000 journal article
Fabrication and testing of a microstrip particle detector based on highly oriented diamond films
Diamond and Related Materials, 9(3-6), 1008–1012.
Source: NC State University Libraries
Added: August 6, 2018
1997 journal article
Highly oriented diamond deposited using a low pressure flat flame
MATERIALS LETTERS, 32(1), 9–12.
author keywords: diamond; combustion synthesis; highly oriented; x-ray texture analysis; si substrate
UN Sustainable Development Goal Categories
3. Good Health and Well-being
(Web of Science)
Source: Web Of Science
Added: August 6, 2018
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