Sungkee Han

Kim, I., Han, S. K., & Osburn, C. M. (2004). Effect of post-metallization annealing for alternative gate stack devices. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 151(2), F29–F35. https://doi.org/10.1149/1.1636181

Kim, I., Han, S. K., & Osburn, C. M. (2004). Stability of advanced gate stack devices. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 151(2), F22–F28. https://doi.org/10.1149/1.1636180

Osburn, C. M., Kim, I., Han, S. K., De, I., Yee, K. F., Gannavaram, S., … Ozturk, M. C. (2002). Vertically scaled MOSFET gate stacks and junctions: How far are we likely to go? IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 46(2-3), 299–315. https://doi.org/10.1147/rd.462.0299

Han, S. K., McClure, M. T., Wolden, C. A., Vlahovic, B., Soldi, A., & Sitar, S. (2000). Fabrication and testing of a microstrip particle detector based on highly oriented diamond films. Diamond and Related Materials, 9(3-6), 1008–1012.

Wolden, C. A., Han, S. K., McClure, M. T., Sitar, Z., & Prater, J. T. (1997). Highly oriented diamond deposited using a low pressure flat flame. MATERIALS LETTERS, 32(1), 9–12. https://doi.org/10.1016/S0167-577X(97)00003-7