Christopher J. Harris

Harris, C., Gehrke, T., Weeks, T. W., & Basceri, C. (2008). Gallium nitride based high-electron mobility devices. Washington, DC: U.S. Patent and Trademark Office.

Harris, C., Gehrke, T., Weeks, T. W., & Basceri, C. (2008). Method of manufacturing gallium nitride based high-electron mobility devices. Washington, DC: U.S. Patent and Trademark Office.

Harris, C., Konstantinov, A., & Basceri, C. (2008). Vertical junction field effect transistor having an epitaxial gate. Washington, DC: U.S. Patent and Trademark Office.

Harris, C., Konstantinov, A., & Basceri, C. (2007). Method of manufacturing a vertical junction field effect transistor having an epitaxial gate. Washington, DC: U.S. Patent and Trademark Office.

Bachmann, K. J., Sukidi, N., Hopfner, C., Harris, C., Dietz, N., Tran, H. T., … Banks, H. T. (1998). Real-time monitoring of steady-state pulsed chemical beam epitaxy by p-polarized reflectance. JOURNAL OF CRYSTAL GROWTH, 183(3), 323–337. https://doi.org/10.1016/s0022-0248(97)00410-7

Bachmann, K. J., Hopfner, C., Sukidi, N., Miller, A. E., Harris, C. J., Aspnes, D. E., … Banks, H. T. (1997). Molecular layer epitaxy by real-time optical process monitoring. Applied Surface Science, 112(1997 Mar.), 38–47. https://doi.org/10.1016/S0169-4332(96)00975-0

Dietz, N., Sukidi, N., Harris, C., & Bachmann, K. J. (1997). Real-time monitoring of surface processes by p-polarized reflectance. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, Vol. 15, pp. 807–815. https://doi.org/10.1116/1.580712