@article{wolfe_hinds_wang_lucovsky_ward_xu_nemanich_maher_1999, title={Thermochemical stability of silicon-oxygen-carbon alloy thin films: A model system for chemical and structural relaxation at SiC-SiO2 interfaces}, volume={17}, ISSN={["0734-2101"]}, DOI={10.1116/1.581745}, abstractNote={Alloy thin films of hydrogenated silicon–oxygen–carbon (Si,C)Ox x<2, were deposited and analyzed in terms of changes in structure and bonding as a function of rapid thermal annealing between 600 and 1100 °C using a combination of Fourier transform infrared spectroscopy, Raman scattering and high-resolution transmission electron microscopy. Results showed that three structural/chemical transformations took place upon annealing. The initial reaction (600–800 °C) involved the loss of hydrogen bonded to both silicon and carbon. At intermediate temperatures (900–1000 °C) a Si–O–C type bond was observed to form, and subsequently disappear after annealing to 1050 °C. The formation of ordered amorphous-SiC regions, nanocrystalline-Si regions, and stoichiometric, thermally relaxed SiO2 accompanied the disappearance of the Si–O–C bond at the 1050 °C annealing temperature. Using this alloy as a model system, important information is obtained for optimized processing of SiC–SiO2 interfaces for device applications.}, number={4}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS}, author={Wolfe, DM and Hinds, BJ and Wang, F and Lucovsky, G and Ward, BL and Xu, M and Nemanich, RJ and Maher, DM}, year={1999}, pages={2170–2177} }
 @article{lucovsky_koh_chaflin_hinds_1998, title={Interfacial sub-oxide regions at Si-SiO2 interfaces: minimization by post-oxidation rapid thermal anneal}, volume={123}, ISSN={["1873-5584"]}, DOI={10.1016/S0169-4332(97)00528-X}, abstractNote={Transition regions at SiSiO2 interfaces contain su☐ide bonding arrangements which contribute to interface roughness and may give rise to electronically active defects. Interfacial transition regions with su☐ide bonding are a direct result of thermal and plasma-assisted oxidation at temperatures up to at least 800°C, but sub-oxide bonding is significantly reduced following a 30 s, 900°C RTA. The kinetics of annealing are essentially the same as those for separation of homogeneous sub-oxide thin films (SiOx, x < 2) into silicon nanocrystals and stoichiometric SiO2.}, journal={APPLIED SURFACE SCIENCE}, author={Lucovsky, G and Koh, K and Chaflin, B and Hinds, B}, year={1998}, month={Jan}, pages={490–495} }
 @article{hinds_wang_wolfe_hinkle_lucovsky_1998, title={Investigation of postoxidation thermal treatments of Si/SiO2 interface in relationship to the kinetics of amorphous Si suboxide decomposition}, volume={16}, number={4}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Hinds, B. J. and Wang, F. and Wolfe, D. M. and Hinkle, C. L. and Lucovsky, G.}, year={1998}, pages={2171–2176} }
 @article{hinds_wang_wolfe_hinkle_lucovsky_1998, title={Study of SiOx decomposition kinetics and formation of Si nanocrystals in an SiOx matrix}, volume={230 (part A)}, number={1998 May}, journal={Journal of Non-crystalline Solids}, author={Hinds, B. J. and Wang, F. and Wolfe, D. M. and Hinkle, C. L. and Lucovsky, G.}, year={1998}, pages={507–512} }
 @article{lucovsky_banerjee_niimi_koh_hinds_meyer_lupke_kurz_1997, title={Elimination of sub-oxide transition regions at Si-SiO2 interfaces by rapid thermal annealing at 900 degrees C}, volume={117}, ISSN={["1873-5584"]}, DOI={10.1016/S0169-4332(97)80079-7}, abstractNote={In many spectroscopic studies, particularly by X-ray photoelectron spectroscopy, XPS, it has been generally assumed that the existence of sub-oxide transition regions at SiSiO2 interfaces were not strongly dependent on synthesis chemistries and processing conditions. This paper presents experimental evidence for a kinetically-limited phase transition at SiSiO2 interfaces at approximately 900°C that can minimize and to a large degree eliminate significant interfacial sub-oxide transition regions. The paper emphasizes a connection between (i) differences in photoluminescence from SiOx bulk films before and after 900°C annealing and (ii) differences in electrical performance of SiSiO2 interfaces and optical second harmonic generation from SiSiO2 interfaces, also before and after 900°C annealing}, journal={APPLIED SURFACE SCIENCE}, author={Lucovsky, G and Banerjee, A and Niimi, H and Koh, K and Hinds, B and Meyer, C and Lupke, G and Kurz, H}, year={1997}, month={Jun}, pages={202–206} }
 @inproceedings{hinds_aspenes_lucovsky_1997, title={Low pH chemical etch route for smooth H-terminated Si(100) and study of subsequent chemical stability}, booktitle={Environmental, safety, and health issues in IC production: Symposium held December 4-5, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society Symposium proceedings, no. 447)}, publisher={Pittsburgh, PA: Materials Research Society}, author={Hinds, B. J. and Aspenes, D. E. and Lucovsky, G.}, year={1997}, pages={191–196} }
 @article{lucovsky_banerjee_hinds_claflin_koh_yang_1997, title={Minimization of sub-oxide transition regions at Si-SiO2 interfaces by 900 degrees C rapid thermal annealing}, volume={36}, ISSN={["0167-9317"]}, DOI={10.1016/s0167-9317(97)00049-x}, abstractNote={Abstract Combining previously reported optical second harmonic generation (SHG) data with i) newly-reported X-ray photoelectron spectroscopy (XPS) data and ii) the Auger electron spectroscopy (AES) results presented in this paper demonstrates that interfacial sub-oxide bonding (SiOx, x}, number={1-4}, journal={MICROELECTRONIC ENGINEERING}, author={Lucovsky, G and Banerjee, A and Hinds, B and Claflin, B and Koh, K and Yang, H}, year={1997}, month={Jun}, pages={207–210} }