@article{lindquist_jarrendahl_peters_zettler_cobet_esser_aspnes_henry_edwards_2001, title={Ordinary and extraordinary dielectric functions of 4H-and 6H-SiC from 3.5 to 9.0 eV}, volume={78}, DOI={10.1063/1.1369617}, number={18}, journal={Applied Physics Letters}, author={Lindquist, O. P. A. and Jarrendahl, K. and Peters, S. and Zettler, J. T. and Cobet, C. and Esser, N. and Aspnes, D. E. and Henry, A. and Edwards, N. V.}, year={2001}, pages={2715–2717} }
 @article{ronning_dalmer_uhrmacher_restle_vetter_ziegeler_hofsass_gehrke_jarrendahl_davis_2000, title={Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery}, volume={87}, DOI={10.1063/1.372154}, number={5}, journal={Journal of Applied Physics}, author={Ronning, C. and Dalmer, M. and Uhrmacher, M. and Restle, M. and Vetter, U. and Ziegeler, L. and Hofsass, H. and Gehrke, T. and Jarrendahl, K. and Davis, R. F.}, year={2000}, pages={2149–2157} }
 @article{edwards_madsen_robbie_powell_jarrendahl_cobet_esser_richter_aspnes_2000, title={Real-time assessment of over layer removal on 4H-SiC surfaces: Techniques and relevance to contact formation}, volume={338}, DOI={10.4028/www.scientific.net/msf.338-342.1033}, number={3}, journal={Materials Science Forum}, author={Edwards, N. V. and Madsen, L. D. and Robbie, K. and Powell, G. D. and Jarrendahl, K. and Cobet, C. and Esser, N. and Richter, W. and Aspnes, D. E.}, year={2000}, pages={1033–1036} }
 @article{edwards_jarrendahl_aspnes_robbie_powell_cobet_esser_richter_madsen_2000, title={Real-time assessment of selected surface preparation regimens for 4H-SiC surfaces using spectroscopic ellipsometry}, volume={464}, DOI={10.1016/S0039-6028(00)00689-0}, number={1}, journal={Surface Science}, author={Edwards, N. V. and Jarrendahl, K. and Aspnes, D. E. and Robbie, K. and Powell, G. D. and Cobet, C. and Esser, N. and Richter, W. and Madsen, L. D.}, year={2000}, pages={L703–707} }
 @article{jarrendahl_smith_zheleva_kern_davis_1998, title={Growth of highly (0001)-oriented aluminum nitride thin films with smooth surfaces on silicon carbide by gas-source molecular beam epitaxy}, volume={49}, DOI={10.1016/S0042-207X(97)00177-2}, number={3}, journal={Vacuum}, author={Jarrendahl, K. and Smith, S. A. and Zheleva, T. and Kern, R. S. and Davis, R. F.}, year={1998}, pages={189–191} }
 @article{jarrendahl_davis_1998, title={Materials properties and characterization of SiC}, volume={52}, DOI={10.1016/S0080-8784(08)62843-4}, number={1998}, journal={Semiconductors and Semimetals}, author={Jarrendahl, K. and Davis, R. F.}, year={1998}, pages={1–20} }
 @article{jarrendahl_arwin_1998, title={Multiple sample analysis of spectroscopic ellipsometry data of semi-transparent films}, volume={313}, DOI={10.1016/S0040-6090(97)00781-5}, number={1998 Feb.}, journal={Thin Solid Films}, author={Jarrendahl, K. and Arwin, H.}, year={1998}, pages={114–118} }
 @article{kern_jarrendahl_tanaka_davis_1997, title={Growth and doping via gas-source molecular beam epitaxy of SiC and SiC/AlN heterostructures and their microstructural and electrical characterization}, volume={6}, DOI={10.1016/S0925-9635(97)00066-6}, number={10}, journal={Diamond and Related Materials}, author={Kern, R. S. and Jarrendahl, K. and Tanaka, S. and Davis, R. F.}, year={1997}, pages={1282–1288} }
 @article{kern_jarrendahl_tanaka_davis_1997, title={Homoepitaxial SiC growth by molecular beam epitaxy}, volume={202}, number={1}, journal={Physica Status Solidi. B, Basic Solid State Physics}, author={Kern, R. S. and Jarrendahl, K. and Tanaka, S. and Davis, R. F.}, year={1997}, pages={379–404} }
 @article{jarrendahl_ivanov_sundgren_radnoczi_czigany_greene_1997, title={Microstructure evolution in amorphous GE/SI multilayers grown by magnetron sputter deposition}, volume={12}, DOI={10.1557/JMR.1997.0249}, number={7}, journal={Journal of Materials Research}, author={Jarrendahl, K. and Ivanov, I. and Sundgren, J. E. and Radnoczi, G. and Czigany, Z. S. and Greene, J. E.}, year={1997}, pages={1806–1815} }