Works (1)

Updated: July 5th, 2023 16:04

1997 article

Hydrogen atom participation in metastable defect formation at Si-SiO2 interfaces

Lucovsky, G., Yang, H., Jing, Z., & Whitten, J. L. (1997, June). APPLIED SURFACE SCIENCE, Vol. 117, pp. 192–197.

By: G. Lucovsky n, H. Yang n, Z. Jing n & J. Whitten n 

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
author keywords: Si-SiO2 interfaces; metastable defects; defect reactions; interface traps; fixed oxide charge
Sources: Web Of Science, ORCID
Added: August 6, 2018