Z. Jing

Works (1)

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1997 article

Hydrogen atom participation in metastable defect formation at Si-SiO2 interfaces

Lucovsky, G., Yang, H., Jing, Z., & Whitten, J. L. (1997, June). APPLIED SURFACE SCIENCE, Vol. 117, pp. 192–197.

By: G. Lucovsky, H. Yang, Z. Jing & J. Whitten 

author keywords: Si-SiO2 interfaces; metastable defects; defect reactions; interface traps; fixed oxide charge
Sources: Web Of Science, ORCID
Added: August 6, 2018