1997 article
Hydrogen atom participation in metastable defect formation at Si-SiO2 interfaces
Lucovsky, G., Yang, H., Jing, Z., & Whitten, J. L. (1997, June). APPLIED SURFACE SCIENCE, Vol. 117, pp. 192β197.
By: G. Lucovsky n, H. Yang n, Z. Jing n & J. Whitten nβ