Yongkook Park

Segregation and thermal dissociation of hydrogen at the (110)/(001) silicon grain boundary

Electronic Materials Letters, 6(1), 1–5.

Hydrogen passivation of deep energy levels at the interfacial grain boundary in (110)/(100) bonded silicon wafers

Journal of Applied Physics, 105(1).

Identification of bot commands by run-time execution monitoring

25th Annual Computer Security Applications Conference, 321–330.

Investigation of iron impurity gettering at dislocations in a SiGe/Si heterostructure

Journal of Applied Physics, 105(7).

Deep level transient spectroscopy and capacitance-voltage study of dislocations and associated defects in SiGe/Si heterostructures

Journal of Applied Physics, 103(7).