@article{hyun_barletta_koh_yoo_oh_aspnes_cuomo_2000, title={Effect of Ar+ ion beam in the process of plasma surface modification of PET films}, volume={77}, ISSN={["0021-8995"]}, DOI={10.1002/1097-4628(20000822)77:8<1679::AID-APP4>3.0.CO;2-F}, abstractNote={In general, plasma modified polymer surfaces tend to show short aging time and rapid hydrophobic recovery after treatment. To prevent reorientation from the surface to the bulk, appropriate crosslinking is necessary among the polymer chains. In this work, an Ar+ ion beam was used to provide crosslinking to the surface. Crosslinking was shown by spectroscopic ellipsometry, AFM, and FTIR. Contact angle measurements were performed to see the aging of the modified surfaces. The surface modified with Ar+ ion beam followed by RF plasma treatment exhibited reduced chain mobility and a highly stable hydrophilic surface. © 2000 John Wiley & Sons, Inc. J Appl Polym Sci 77: 1679–1683, 2000}, number={8}, journal={JOURNAL OF APPLIED POLYMER SCIENCE}, author={Hyun, J and Barletta, P and Koh, K and Yoo, S and Oh, J and Aspnes, DE and Cuomo, JJ}, year={2000}, month={Aug}, pages={1679–1683} }
 @article{koh_niimi_lucovsky_green_1998, title={Controlled nitrogen incorporation at Si-SiO2 interfaces by remote plasma-assisted processing}, volume={37}, ISSN={["0021-4922"]}, DOI={10.1143/JJAP.37.709}, abstractNote={ 
    This paper presents experimental studies in which N-atoms have been incorporated at Si–SiO2   interfaces by forming the interface and oxide film by a 300°C remote plasma assisted   nitridation/oxidation process using N2O. Process dynamics have been studied by on-line Auger   electron spectroscopy (AES) by interrupted plasma processing. Based on AES studies using N2O,   O2 and sequenced N2O and O2 source gases, reaction pathways for i) N-atom incorporation at   and/or ii) removal from buried Si–SiO2 interfaces have been identified, and contrasted with reaction   pathways for nitridation using conventional furnace processing. 
    }, number={2}, journal={JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS}, author={Koh, K and Niimi, H and Lucovsky, G and Green, ML}, year={1998}, month={Feb}, pages={709–714} }
 @article{lucovsky_koh_chaflin_hinds_1998, title={Interfacial sub-oxide regions at Si-SiO2 interfaces: minimization by post-oxidation rapid thermal anneal}, volume={123}, ISSN={["1873-5584"]}, DOI={10.1016/S0169-4332(97)00528-X}, abstractNote={Transition regions at SiSiO2 interfaces contain su☐ide bonding arrangements which contribute to interface roughness and may give rise to electronically active defects. Interfacial transition regions with su☐ide bonding are a direct result of thermal and plasma-assisted oxidation at temperatures up to at least 800°C, but sub-oxide bonding is significantly reduced following a 30 s, 900°C RTA. The kinetics of annealing are essentially the same as those for separation of homogeneous sub-oxide thin films (SiOx, x < 2) into silicon nanocrystals and stoichiometric SiO2.}, journal={APPLIED SURFACE SCIENCE}, author={Lucovsky, G and Koh, K and Chaflin, B and Hinds, B}, year={1998}, month={Jan}, pages={490–495} }
 @article{lucovsky_niimi_koh_green_1998, title={Monolayer nitrogen atom incorporation at buried Si-SiO2 interfaces: Preparation by remote plasma oxidation/nitridation and characterization by on-line auger electron spectroscopy}, volume={5}, ISSN={["0218-625X"]}, DOI={10.1142/S0218625X98000323}, abstractNote={ This paper presents experimental studies in which N-atoms have been incorporated at Si-SiO 2 interfaces by forming the interface and oxide film by a 300°C remote-plasma-assisted nitridation/oxidation process using N 2 O . Process dynamics have been studied by on-line Auger electron spectroscopy (AES) by interrupted plasma processing. Based on AES studies using N 2 O , O 2 and sequenced N 2 O and O 2 source gases, reaction pathways for (i) N-atom incorporation at and/or (ii) removal from buried Si-SiO 2 interfaces have been identified, and contrasted with reaction pathways for nitridation using conventional furnace processing. }, number={1}, journal={SURFACE REVIEW AND LETTERS}, author={Lucovsky, G and Niimi, H and Koh, K and Green, ML}, year={1998}, month={Feb}, pages={167–173} }
 @article{koh_niimi_lucovsky_1998, title={Plasma-engineered Si-SiO2 interfaces: monolayer nitrogen atom incorporation by low-temperature remote plasma-assisted oxidation in N2O}, volume={98}, ISSN={["0257-8972"]}, DOI={10.1016/S0257-8972(97)00392-7}, abstractNote={Abstract This paper presents experimental studies in which N-atoms have been incorporated at Si−SiO 2 interfaces by forming the interface and oxide film by a 300 °C remote plasma-assisted nitridation/oxidation process using N 2 O. Process dynamics have been studied by interrupted plasma processing using on-line Auger electron spectroscopy (AES). Based on the on-line AES, and complementary ex situ secondary ion mass spectroscopy and optical second harmonic generation results, monolayer nitrogen atom interface coverage has been confirmed. The factors that contribute to preferential nitrogen atom attachment at the Si−SiO 2 interface have been identified.}, number={1-3}, journal={SURFACE & COATINGS TECHNOLOGY}, author={Koh, K and Niimi, H and Lucovsky, G}, year={1998}, month={Jan}, pages={1524–1528} }
 @article{cohen_koh_1997, title={Compact rings having a finite simple group of units}, volume={119}, ISSN={["0022-4049"]}, DOI={10.1016/S0022-4049(96)00128-4}, abstractNote={For a compact Hausdorff ring, one observes that the group of units is a totally disconnected compact topological group and is a finite simple group if and only if it possesses no nontrivial closed normal subgroups. Three classification theorems for compact rings are now given. First, those compact rings with identity having a finite simple group of units are identified. Second, a classification of all compact rings A with identity for which 2 is a unit in A, G modulo the center of G is a finite simple group and the length of W is less than or equal to 4 (or equivalently, W is a torsion group) is given where G is the group of units in A and W is the subgroup of G generated by {g∈ G: g2 = 1}. Finally, those compact rings with identity having 2 as a unit and for which W is a nilpotent group are identified.}, number={1}, journal={JOURNAL OF PURE AND APPLIED ALGEBRA}, author={Cohen, JA and Koh, K}, year={1997}, month={Jun}, pages={13–26} }
 @article{lucovsky_banerjee_niimi_koh_hinds_meyer_lupke_kurz_1997, title={Elimination of sub-oxide transition regions at Si-SiO2 interfaces by rapid thermal annealing at 900 degrees C}, volume={117}, ISSN={["1873-5584"]}, DOI={10.1016/S0169-4332(97)80079-7}, abstractNote={In many spectroscopic studies, particularly by X-ray photoelectron spectroscopy, XPS, it has been generally assumed that the existence of sub-oxide transition regions at SiSiO2 interfaces were not strongly dependent on synthesis chemistries and processing conditions. This paper presents experimental evidence for a kinetically-limited phase transition at SiSiO2 interfaces at approximately 900°C that can minimize and to a large degree eliminate significant interfacial sub-oxide transition regions. The paper emphasizes a connection between (i) differences in photoluminescence from SiOx bulk films before and after 900°C annealing and (ii) differences in electrical performance of SiSiO2 interfaces and optical second harmonic generation from SiSiO2 interfaces, also before and after 900°C annealing}, journal={APPLIED SURFACE SCIENCE}, author={Lucovsky, G and Banerjee, A and Niimi, H and Koh, K and Hinds, B and Meyer, C and Lupke, G and Kurz, H}, year={1997}, month={Jun}, pages={202–206} }
 @article{lucovsky_banerjee_hinds_claflin_koh_yang_1997, title={Minimization of sub-oxide transition regions at Si-SiO2 interfaces by 900 degrees C rapid thermal annealing}, volume={36}, ISSN={["0167-9317"]}, DOI={10.1016/s0167-9317(97)00049-x}, abstractNote={Abstract Combining previously reported optical second harmonic generation (SHG) data with i) newly-reported X-ray photoelectron spectroscopy (XPS) data and ii) the Auger electron spectroscopy (AES) results presented in this paper demonstrates that interfacial sub-oxide bonding (SiOx, x}, number={1-4}, journal={MICROELECTRONIC ENGINEERING}, author={Lucovsky, G and Banerjee, A and Hinds, B and Claflin, B and Koh, K and Yang, H}, year={1997}, month={Jun}, pages={207–210} }
 @article{golz_lucovsky_koh_wolfe_niimi_kurz_1997, title={Plasma-assisted formation of low defect density SiC-SiO2 interfaces}, volume={15}, number={4}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Golz, A. and Lucovsky, G. and Koh, K. and Wolfe, D. and Niimi, H. and Kurz, H.}, year={1997}, pages={1097–1104} }
 @article{niimi_koh_lucovsky_1997, title={Ultra-thin gate dielectrics prepared by low-temperature remote plasma-assisted oxidation}, volume={127}, ISSN={["0168-583X"]}, DOI={10.1016/S0168-583X(96)00958-5}, abstractNote={Abstract This paper discusses the formation of ultra-thin nitrided gate oxides by a low temperature plasma assisted oxidation process using remotely excited N2O as the source gas for both oxygen and nitrogen atoms. Three aspects of this process are addressed: (i) the differences in oxide growth rates for O2 or N2O plasma oxidation processes; (ii) the reaction pathways for the incorporation of nitrogen at the SiSiO2 interface for the N2O plasma process; and (iii) possible nitrogen atom depletion during processing steps that follow the plasma assisted oxidation/nitridation process.}, journal={NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS}, author={Niimi, H and Koh, K and Lucovsky, G}, year={1997}, month={May}, pages={364–368} }