@article{dougherty_sandin_vescovo_rowe_2014, title={Coverage-dependent surface magnetism of iron phthalocyanine on an O-Fe(110) surface}, volume={90}, ISSN={["2469-9969"]}, DOI={10.1103/physrevb.90.045406}, abstractNote={Iron phthalocyanine adsorbed on an oxygen covered Fe(110) surface shows a complex coverage-dependent spin polarization during growth of a molecular monolayer. Spin polarization is modified at low submonolayer coverages, absent at intermediate submonolayer coverages, and reappears in modified form for a complete monolayer. This is attributed to coverage-dependent adsorption configurations from a random adsorption system to a packed monolayer with a well-defined interfacial spin polarization. In addition, we report on the observation of a rotation of the spin direction of photoelectrons in the presence of molecules which is attributed to molecular modifications of surface magnetic anisotropy.}, number={4}, journal={PHYSICAL REVIEW B}, author={Dougherty, Daniel B. and Sandin, Andreas and Vescovo, Elio and Rowe, J. E.}, year={2014}, month={Jul} }
 @article{sandin_rowe_dougherty_2013, title={Improved graphene growth in UHV: Pit-free surfaces by selective Si etching of SiC(0001)-Si with atomic hydrogen}, volume={611}, ISSN={["1879-2758"]}, DOI={10.1016/j.susc.2013.01.010}, abstractNote={We present a novel technique of growing UHV graphene using atomic hydrogen etching of SiC(0001)–Si surfaces. Hydrogen atoms generated from a hot tungsten filament selectively etch silicon surface atoms thereby facilitating the Si-sublimation process at temperatures around 1000 °C according to Auger Electron Spectroscopy. This allows for separate, non-thermal control of the rate of formation of the interfacial buffer layer formation to yield reduced pit formation observed by scanning tunneling microscopy during subsequent UHV graphene growth.}, journal={SURFACE SCIENCE}, author={Sandin, Andreas and Rowe, J. E. and Dougherty, Daniel B.}, year={2013}, month={May}, pages={25–31} }
 @article{stuart_satchet_sandin_maria_rowe_dougherty_ulrich_2013, title={Smooth MgO films grown on graphite and graphene by pulsed laser deposition}, volume={31}, ISSN={["2166-2746"]}, DOI={10.1116/1.4818511}, abstractNote={Pulsed laser deposition was used to grow thin (1–100 nm) magnesium oxide films directly on graphite and epitaxial graphene on SiC(0001). The authors observe very smooth (typical rms roughness of ∼0.4 nm) film morphologies that are nearly independent of film thickness and conformal to the substrate for films grown on room temperature substrates. Surface roughness is less than 1 nm for thicknesses up to 100 nm and is independent of oxygen background pressure during growth. X-ray diffraction shows no evidence of crystallinity for films grown on room temperature substrates but shows ⟨100⟩ texture for films grown on heated substrates that also have very rough surface morphologies. X-ray photoelectron spectroscopy shows hydroxylation of films due to air exposure that can only be partially removed by annealing, indicating the presence of atomic defects in the films.}, number={5}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B}, author={Stuart, Sean C. and Satchet, Edward and Sandin, Andreas and Maria, Jon-Paul and Rowe, John E. and Dougherty, Daniel B. and Ulrich, Marc}, year={2013}, month={Sep} }
 @article{sandin_jayasekera_rowe_kim_buongiorno nardelli_dougherty_2012, title={Multiple coexisting intercalation structures of sodium in epitaxial graphene-SiC interfaces}, volume={85}, ISSN={1098-0121 1550-235X}, url={http://dx.doi.org/10.1103/PhysRevB.85.125410}, DOI={10.1103/physrevb.85.125410}, abstractNote={This article discusses multiple coexisting intercalation structures of sodium in peitaxial graphene-SiC interfaces.}, number={12}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Sandin, Andreas and Jayasekera, Thushari and Rowe, J. E. and Kim, Ki Wook and Buongiorno Nardelli, M. and Dougherty, Daniel B.}, year={2012}, month={Mar} }
 @article{nelson_sandin_dougherty_aspnes_rowe_diebold_2012, title={Optical and structural characterization of epitaxial graphene on vicinal 6H-SiC(0001)-Si by spectroscopic ellipsometry, Auger spectroscopy, and STM}, volume={30}, ISSN={["2166-2754"]}, DOI={10.1116/1.4726199}, abstractNote={The authors report results of spectroscopic ellipsometry (SE) measurements in the near-IR, visible, and near-UV spectral ranges using a Woollam dual rotating-compensator ellipsometer, analyzing data in terms of both epitaxial graphene and interface contributions. The SiC samples were cleaned by standard methods of CMP and HF etching prior to mounting in UHV and growing epitaxial graphene by thermal annealing at ∼1400 °C. Most samples were vicinally cut 3.5° off (0001) toward [11−20]. STM measurements show that the initial regular step edges were replaced by somewhat irregular edges after graphene growth. From growth-temperature and Auger data the authors estimate that the graphene is ∼3–4 ML thick. The authors find significant differences among the spectral features of the interface “buffer” layer and those of graphene. Specifically, the hyperbolic-exciton peak reported previously at ∼4.5 eV in graphene shifts to a similarly shaped peak at ∼4 eV in the interface buffer layer. The authors attribute this shift to a significant component of sp3 bonded carbon in the buffer, which occurs in addition to the sp2 bonded carbon that is present in the graphene layer. SE data in the terahertz range obtained by Hoffman et al. [Thin Solid Films 519, 2593 (2011)] show that the mobility values of graphene grown on the carbon face of SiC vary with proximity to the substrate. This leads to the question as to whether an interface layer at the Si face has properties (i.e., dielectric function/complex refractive index) that are different from and/or affect those of the graphene layers.}, number={4}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B}, author={Nelson, Florence and Sandin, Andreas and Dougherty, Daniel B. and Aspnes, David E. and Rowe, Jack E. and Diebold, Alain C.}, year={2012}, month={Jul} }
 @article{sandin_pronschinske_rowe_dougherty_2010, title={Incomplete screening by epitaxial graphene on the Si face of 6H-SiC(0001)}, volume={97}, ISSN={["1077-3118"]}, DOI={10.1063/1.3484966}, abstractNote={A biased scanning tunneling microscope (STM) tip is used to study the ability of carriers in graphene to screen external electrostatic fields by monitoring the effect of tunneling-junction width on the position of image potential-derived surface states. These states are unusually sensitive to local electric fields due to the STM tip in both single layer and bilayer epitaxial graphene. This is attributed to the incomplete screening of applied fields in epitaxial graphene on SiC(0001). Our observations imply that charged impurity scattering is likely to be a dominant factor in the transport properties of epitaxial graphene on SiC.}, number={11}, journal={APPLIED PHYSICS LETTERS}, author={Sandin, Andreas and Pronschinske, Alex and Rowe, J. E. and Dougherty, Daniel B.}, year={2010}, month={Sep} }