@inproceedings{mainali_madhusoodhanan_tripathi_vechalapu_de_bhattacharya_2016, title={Design and evaluation of isolated gate driver power supply for medium voltage converter applications}, volume={2016-May}, url={http://www.scopus.com/inward/record.url?eid=2-s2.0-84973644285&partnerID=MN8TOARS}, DOI={10.1109/apec.2016.7468085}, abstractNote={The commercial gate drivers are available upto 6.5 kV IGBTs. With the advances in the SiC, power devices rated beyond 10 kV are being researched. These devices will have use on medium voltage power converters. Commercial gate drivers rated for such high voltages are not available. These power devices have very high dv/dts (30-100 kV/μs) at switching transitions. Such high dv/dts bring in challenges in the gate driver design. The isolation stage of the gate power supply needs to have very low coupling capacitance to limit the high frequency circulating currents from reaching the gate driver control circuits. Also, the isolation stage has to be designed with insulation several times higher than the peak system voltage level. In this paper, design, development and evaluation of the gate power supply for medium voltage level applications have been investigated. Several isolation transformer designs have been investigated and optimum design, with very low coupling capacitance ≈ 0.5 pF, has been identified and used in the gate driver design. Experimental characterization of the transformer has been done. The performance of the gate driver power supply has been evaluated in several MV power converters, using 10 kV SiC MOSFETs.}, booktitle={Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC}, author={Mainali, K. and Madhusoodhanan, S. and Tripathi, A. and Vechalapu, K. and De, A. and Bhattacharya, Subhashish}, year={2016}, pages={1632–1639} }
 @inproceedings{de_morgan_iyer_ke_zhao_vechalapu_bhattacharya_hopkins_2016, title={Design, package, and hardware verification of a high voltage current switch}, volume={2016-May}, url={http://www.scopus.com/inward/record.url?eid=2-s2.0-84973664278&partnerID=MN8TOARS}, DOI={10.1109/apec.2016.7467887}, abstractNote={This paper demonstrates various electrical and package design considerations in series connecting a high-voltage (HV) silicon (Si)-IGBT (6500-V/25-A die) and a silicon carbide-junction barrier Schottky diode (6500-V/25-A die) to form an HV current switch. The effects of connecting the cathode of the series diode to an IGBT collector, versus connecting the IGBT emitter to the anode of the series diode, are analyzed in regards to minimizing the parasitic inductance. An optimized package structure is discussed and an HV current switch module is custom fabricated in the laboratory. An HV double pulse test circuit is used to verify the switching performance of the current switch module. Low-voltage and HV converter prototypes are developed and tested to ensure thermal stability of the same. The main motivation of this paper is to enumerate detailed design considerations for packaging an HV current switch.}, note={\urlhttps://ieeexplore.ieee.org/document/7467887/}, booktitle={Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC}, author={De, A. and Morgan, A. and Iyer, V.M. and Ke, H. and Zhao, X. and Vechalapu, K. and Bhattacharya, Subhashish and Hopkins, D.C.}, year={2016}, pages={295–302} }
 @article{hazra_de_cheng_palmour_schupbach_hull_allen_bhattacharya_2016, title={High switching performance of 1700-V, 50-A SiC power MOSFET over Si IGBT/BiMOSFET for advanced power conversion applications}, volume={31}, number={7}, journal={IEEE Transactions on Power Electronics}, author={Hazra, S. and De, A. K. and Cheng, L. and Palmour, J. and Schupbach, M. and Hull, B. A. and Allen, S. and Bhattacharya, S.}, year={2016}, pages={4742–4754} }
 @inproceedings{de_bhattacharya_2015, title={Control of dynamic VAR compensator based on current source converter}, url={http://www.scopus.com/inward/record.url?eid=2-s2.0-84963625762&partnerID=MN8TOARS}, DOI={10.1109/ecce.2015.7310146}, abstractNote={The paper proposes a current source based Dynamic VAR Compensator (DVC) control strategy. The switching unit in this DVC topology is composed of series connected switch and diode also termed as the “current switch”. The proposed controller has been designed to force discontinuous conduction mode operation thus fundamentally different from the traditional constant current source based control system operation. This naturally facilitates zero current turn-on, zero voltage switch overlap and zero current turn off. Two of the switches undergo hard switched turn off only once in a switching time period. The switching scheme has been managed in such a way that the diodes are always turned off at zero voltage thereby minimizing the reverse recovery loss and stress. This effectively reduces the switching losses and allows the switching frequency to be designed considerably higher. High Switching frequency facilitates faster response and high power density. An average model of this DVC converter has been used in an IEEE-34 BUS system to validate the VAR compensation capability. It has been shown that this effectively improves the feeder voltage profile. The ill effects of partial clouding over roof-top PV cells have also been shown, and its mitigation by the DVC. The proposed VAR compensator algorithm can adjust capacitive reactive power as well as inductive reactive power, which can be adapted to a wide range of load.}, booktitle={2015 IEEE Energy Conversion Congress and Exposition, ECCE 2015}, author={De, A. and Bhattacharya, Subhashish}, year={2015}, pages={3442–3448} }
 @inproceedings{de_morgan_bhattacharya_hopkins_2015, title={Design considerations of packaging a high voltage current switch}, booktitle={International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, 2015, vol 3}, author={De, A. and Morgan, A. and Bhattacharya, S. and Hopkins, D. C.}, year={2015} }
 @inproceedings{beddingfield_de_mirzae_bhattacharya_2015, title={Design methodology of series DC coupling transformer in a medium-voltage DC amplifier system}, volume={2015-May}, url={http://www.scopus.com/inward/record.url?eid=2-s2.0-84937857830&partnerID=MN8TOARS}, DOI={10.1109/apec.2015.7104350}, abstractNote={The medium-voltage dc amplifier is a controllable dc source for the purpose of testing medium-voltage dc system technologies for shipboard applications. In a medium-voltage dc amplifier system, a dc active filter with a series dc coupling transformer is an integral component of the system required for both steady-state and dynamic voltage injection. This paper describes the design aspects and methodology for the series dc coupling transformer in such a system. The design of the transformer is one of the most critical aspects of this system as it has to withstand large continuous dc current offset without saturating. Based on system performance requirements, design criteria for the transformer is defined and two transformer designs based on two Iron-based magnetic materials are evaluated for a 12 kVA, 300 Vdc laboratory-scale amplifier test bed. An optimal design methodology is also proposed in this paper. Various design compromises have been studied and reported. The practical transformer design considerations and feasibility study for a medium-voltage dc amplifier system are given.}, number={May}, booktitle={2015 thirtieth annual ieee applied power electronics conference and exposition (apec 2015)}, author={Beddingfield, R. and De, A. K. and Mirzae, H. and Bhattacharya, S.}, year={2015}, pages={183–190} }
 @inproceedings{de_bhattacharya_2015, title={Design, analysis and implementation of discontinuous mode Dyna-C AC/AC converter for solid state transformer applications}, url={http://www.scopus.com/inward/record.url?eid=2-s2.0-84963520581&partnerID=MN8TOARS}, DOI={10.1109/ecce.2015.7310369}, abstractNote={The paper presents an improved control strategy for Dynamic Current (Dyna-C) Converter. Dyna-C is a bidirectional current-source based AC/AC converter for Solid State Transformer (SST) application. The proposed controller facilitates discontinuous mode operation which leads to zero current turn on and turn off. A non-linear average phase charge based controller is presented which ensures zero harmonic current in the input phase currents. The switching scheme has been so arranged that the diodes always turn off at zero voltage thereby reducing the reverse recovery stress and losses. These modifications lead to a considerable reduction of switching loss and device stress as compared to the conventional control scheme of Dyna-C. Owing to soft switching states, the frequency of operation can therefore be pushed further higher thereby reducing the size of the passive components. An alternate switching pattern has also been discussed which enables soft switched turn off of active switches. Design Considerations of packaging such a switch structure has also been discussed. It has been shown that direct connection of Emitter of IGBT to the Anode of the Diode leads to considerably lower parasitic inductance. Design guidelines to construct an optimized inductor has also been discussed. Simulation and experimental results are presented to validate operation of the control scheme. A comparison study has been carried out to choose the appropriate set of devices for this application. It has been shown that SiC-MOS with low cost Si-PiN Diode shows impressive reduction in overall losses.}, booktitle={2015 IEEE Energy Conversion Congress and Exposition, ECCE 2015}, author={De, A. and Bhattacharya, Subhashish}, year={2015}, pages={5030–5037} }
 @inproceedings{de_bhattacharya_2015, title={Discontinuous mode sparse Dyna-C rectifier for efficient AC/DC power conversion}, url={http://www.scopus.com/inward/record.url?eid=2-s2.0-84963576495&partnerID=MN8TOARS}, DOI={10.1109/ecce.2015.7310606}, abstractNote={The paper investigates a soft-switching buck-boost AC/DC converter. The proposed converter uses 4 active switches and overcomes the various shortcomings of conventional rectifiers. The proposed controller facilitates discontinuous mode of operation that leads to zero current turn on and turn off. A nonlinear average phase charge based controller is presented which ensures zero harmonic current in the input phases. The switching scheme has been so arranged that the diodes always turn off at zero voltage thereby reducing the reverse recovery stress and losses. These modifications lead to a considerable reduction of switching loss and device stress as compared to the conventional control scheme of Dyna-C. Owing to soft switching states, the frequency of operation can be pushed even higher thereby reducing the size of the passive components. An alternate switching pattern has also been discussed which enables soft switched turn off of active switches. Design guidelines to construct an optimized inductor has also been discussed. Simulation and initial experimental results are presented to validate operation of the control scheme. A comparison study has been carried out to choose the appropriate set of devices for this application. The research shows that SiC-MOS with low cost Si-PiN Diode results in impressive reduction in overall losses. The topology is expected to offer compact, fast, efficient and inexpensive solution to the present AC/DC power conversion requirements.}, booktitle={2015 IEEE Energy Conversion Congress and Exposition, ECCE 2015}, author={De, A. and Bhattacharya, Subhashish}, year={2015}, pages={6762–6769} }
 @inproceedings{de_bhattacharya_singh_2015, title={Performance evaluation and characterization of 6500V asymmetric SiC NPNP Thyristor based current switch}, url={http://www.scopus.com/inward/record.url?eid=2-s2.0-84963613100&partnerID=MN8TOARS}, DOI={10.1109/wipda.2015.7369324}, abstractNote={The main motivation of this work is to evaluate performance and characteristics of a 6.5kV SiC Thyristor based current switch (series connected active switch and diode). A unique series resonant testing circuit has been proposed to characterize this switch. The device has been tested in several soft and hard turn on and off transitions. Conceptual simulation and hardware results have been presented. It has been shown that SiC Thyristor exhibit fast turn-on transitions (~200ns). This coupled with the fact that SiC-JBS Diode (connected in series) has fast reverse voltage commutation leads to an efficient and robust switch combination for a high voltage, high power and high frequency converter. The collected data has been used to estimate overall device losses of a high voltage and high power resonant soft-switched converter.}, booktitle={WiPDA 2015 - 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications}, author={De, A. and Bhattacharya, Subhashish and Singh, R.}, year={2015}, pages={10–15} }
 @inproceedings{de_roy_bhattacharya_2014, title={Comparative suitability evaluation of reverse-blocking IGBTs for current-source based converter}, url={http://www.scopus.com/inward/record.url?eid=2-s2.0-84906662202&partnerID=MN8TOARS}, DOI={10.1109/ipec.2014.6869950}, abstractNote={In this paper, a Reverse Blocking IGBT is compared with various other combinations of switches and diodes keeping Current Source based Converter application in mind. The devices are tested under Reverse Voltage Commutation, Switch Overlap (turn on at non-zero current but zero voltage), Hard Switching, and Zero Current Switching condition. Test Circuits have been constructed and tested at various voltage levels with various combinations of devices. Forward Characteristics have also been compared. The main motivation of the paper is to make a fair judgment on device selection for Partial Resonant Link AC/AC Converter (soft-switched) and Isolated Dynamic Current Converter (hard switched). As for soft switched, majority of the losses are caused due to conduction loss. Therefore, RB-IGBT leads to a huge reduction of losses owing to better forward characteristics (lower conduction loss) as compared to the rest of the set. SiC-MOS and SiC-JBS Diode combination showed significant loss reduction for hard switched converter.}, booktitle={2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014}, author={De, A. and Roy, S. and Bhattacharya, Subhashish}, year={2014}, pages={2562–2568} }
 @inproceedings{roy_de_bhattacharya_2014, title={Current source inverter based cascaded solid state transformer for AC to DC power conversion}, url={http://www.scopus.com/inward/record.url?eid=2-s2.0-84906690154&partnerID=MN8TOARS}, DOI={10.1109/ipec.2014.6869656}, abstractNote={There are applications like railway traction system where power converters for HVAC to MVDC or MDAC to LVDC are required with a high power/weight ratio. The conventional way is to use heavy line frequency or medium frequency transformers followed by a controlled rectifier. The availability of high voltage SiC devices has made it possible to raise the switching frequency to higher value and hence the size and weight of the transformer can be reduced. This paper proposes a cascaded current source converter based topology with high frequency isolation as a replacement of the huge line frequency transformer. The paper also presents experimental results as a validation of the functionality of the converter.}, booktitle={2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014}, author={Roy, S. and De, A. and Bhattacharya, Subhashish}, year={2014}, pages={651–655} }
 @article{mirzaee_de_tripathi_bhattacharya_2014, title={Design Comparison of High-Power Medium-Voltage Converters Based on a 6.5-kV Si-IGBT/Si-PiN Diode, a 6.5-kV Si-IGBT/SiC-JBS Diode, and a 10-kV SiC-MOSPET/SiC-JBS Diode}, volume={50}, ISSN={["1939-9367"]}, url={http://www.scopus.com/inward/record.url?eid=2-s2.0-84904684358&partnerID=MN8TOARS}, DOI={10.1109/tia.2014.2301865}, abstractNote={In this paper, a comparative design study of high-power medium-voltage three-level neutral-point-clamped converters with a 6.5-kV Si-IGBT/Si-PiN diode, a 6.5-kV Si-IGBT/SiC-JBS diode, and a 10-kV SiC-MOSFET/SiC-JBS diode is presented. A circuit model of a 100-A power module, including packaging parasitic inductances, is developed based on device die SPICE-based circuit models for each power device. Switching waveforms, characteristics, and switching power and energy loss measurements of the power modules, including symmetric/asymmetric parasitic inductances, are presented. High-power converter designs and SPICE circuit simulations are carried out, and power loss and efficiencies are compared for a pulsewidth-modulated (PMW) 1-MW power converter at 1-, 5-, and 10-kHz switching frequencies for application in shipboard power system and a PWM vector-controlled and a line-frequency angle-controlled 20- to 40-MVA power converter at 60-Hz, 540-Hz, and 1-kHz switching frequencies for active mobile substation application. It is shown that the 6.5-kV Si-IGBT incorporating an antiparallel SiC-JBS diode, with its high efficiency performance up to 5-kHz switching frequency, is a strong candidate for megawatt-range power converters. The 10-kV SiC-MOSFET/SiC-JBS diode remains an option for higher switching frequency (5-10 kHz) high-power converters.}, number={4}, journal={IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS}, author={Mirzaee, Hesam and De, Ankan and Tripathi, Awneesh and Bhattacharya, Subhashish}, year={2014}, pages={2728–2740} }
 @inproceedings{hazra_de_bhattacharya_cheng_palmour_schupbach_hull_allen_2014, title={High switching performance of 1.7kV, 50A SiC power MOSFET over Si IGBT for advanced power conversion applications}, url={http://www.scopus.com/inward/record.url?eid=2-s2.0-84906693633&partnerID=MN8TOARS}, DOI={10.1109/ipec.2014.6869991}, abstractNote={Silicon Carbide (SiC) has wider band gap compared to Silicon (Si) and hence MOSFET made in SiC has considerably lower drift region resistance, which is a significant resistive component in high-voltage power devices. Due to low on-state resistance combined with its inherently low switching loss, SiC MOSFET is an excellent candidate for high power converter design. With its lower power loss and operation capability at higher switching frequency, power converters based on SiC MOSFETs can offer much improved efficiency and compact size compared to those using Si IGBTs. In this paper, we report switching performance of a new 1.7kV, 50A SiC MOSFET; designed and developed by Cree, Inc. Hard-switching losses of the SiC MOSFETs with different circuit parameters and operating conditions are measured and compared with the 1.7kV, 50A Si IGBTs, using the same test setup. Switching performance of the 1.7kV SiC MOSFET and 1.7kV SiC Schottky diode connected in series are also evaluated under a zero current switching (ZCS) condition and important findings are reported.}, booktitle={2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014}, author={Hazra, S. and De, A. and Bhattacharya, Subhashish and Cheng, L. and Palmour, J. and Schupbach, M. and Hull, B. and Allen, S.}, year={2014}, pages={3447–3454} }
 @inproceedings{roy_de_bhattacharya_2014, title={Multi-port solid state transformer for inter-grid power flow control}, url={http://www.scopus.com/inward/record.url?eid=2-s2.0-84906689584&partnerID=MN8TOARS}, DOI={10.1109/ipec.2014.6870158}, abstractNote={This paper discusses about a multi-port solid state transformer (SST) which can be used as an inter-grid power flow controller. The objective of the converter is to integrate renewable energy sources with the existing grid along with controlled power flow between the grids. As an example, this paper describes a three terminal isolated SST with an integrated battery bank connected to it. The energy extracted from the renewable energy sources can be stored in the battery bank or can be directly fed to the utility grid. A suitable converter structure is chosen to activate bidirectional power flow between the energy sources. The extracted energy can also be used to supply the local demand. A laboratory prototype of the converter has been built and the functionality of the converter is validated with detailed experimental results.}, booktitle={2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014}, author={Roy, S. and De, A. and Bhattacharya, Subhashish}, year={2014}, pages={3286–3291} }
 @inproceedings{de_roy_bhattacharya_2013, title={Bidirectional soft-switched AC/AC high frequency link converter}, url={http://www.scopus.com/inward/record.url?eid=2-s2.0-84891133946&partnerID=MN8TOARS}, DOI={10.1109/ecce.2013.6647430}, abstractNote={This paper investigates a soft-switching partial-resonant link AC/AC converter. The proposed converter uses 12 unidirectional switches and overcomes the various shortcomings of conventional AC Link schemes. The switching operations occur at zero voltage instants thus lowering the switching losses. The input and output current is harmonic free and the controller also allows setting of desired power factor. It can perform buck and boost operations and has bi-directional power flow capability. As the converter operates at high switching frequency, it offers both improved performance and considerable reduction of volume, weight and cost. Detailed simulation results are presented and prototype converter system has been built and tested.}, booktitle={2013 IEEE Energy Conversion Congress and Exposition, ECCE 2013}, author={De, A. and Roy, S. and Bhattacharya, Subhashish}, year={2013}, pages={5377–5384} }
 @inproceedings{de_roy_bhattacharya_divan_2013, title={Characterization and performance comparison of reverse blocking SiC and Si based switch}, url={http://www.scopus.com/inward/record.url?eid=2-s2.0-84893572618&partnerID=MN8TOARS}, DOI={10.1109/wipda.2013.6695567}, abstractNote={In this paper a custom made Reverse Voltage Blocking 1200V SiC switch or “current switch” (1200V SiC MOSFET in series with a 1200V SiC JBS diode) is compared with various other combinations of Reverse Voltage Blocking switches (with 1200V Si-IGBT, SiC MOSFET and Si-PIN diodes and SiC JBS diodes). The devices are tested under Reverse Voltage Commutation, Switch Overlap (turn on at non-zero current but zero voltage) and Hard Switching conditions. Test circuits have been constructed and tested at different dc voltage levels with various combinations of devices. The custom made current switch results show remarkable reduction of loss owing to reduced leakage inductance of the package. A new form of switching characteristic has been noticed and presented in this paper. The main motivation of the paper is to make a fair judgment on device selection for current stiff based hard and soft switching topologies.}, booktitle={1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings}, author={De, A. and Roy, S. and Bhattacharya, Subhashish and Divan, D.M.}, year={2013}, pages={80–83} }
 @inproceedings{de_roy_bhattacharya_divan_2013, title={Performance analysis and characterization of current switch under reverse voltage commutation, overlap voltage bump and zero current switching}, url={http://www.scopus.com/inward/record.url?eid=2-s2.0-84879373029&partnerID=MN8TOARS}, DOI={10.1109/apec.2013.6520636}, abstractNote={Diode reverse recovery is notorious for increasing switching losses in current stiff converters. A lot of effort has been made over the years to mitigate the reverse recovery losses. However, there exists ways to use this feature to achieve zero voltage transition in the same converter thereby, mitigating the loss incurred as compared to hard switched turn off. An attempt has been made in this paper to demonstrate the behavior of several devices working under Reverse voltage commutation, hard switched and zero current turn off condition. Test Circuits have been constructed and tested at various voltage levels with various combinations of devices. A new form of switching characteristic has been noticed and presented in this paper. The main motivation of the paper is to make a fair judgment on device selection for various soft-switch based topologies.}, booktitle={Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC}, author={De, A. and Roy, S. and Bhattacharya, Subhashish and Divan, D.M.}, year={2013}, pages={2429–2435} }
 @inproceedings{de_roy_bhattacharya_2012, title={Efficiency Comparison of AC-Link and TIPS (SST) Topologies based on accurate device models}, url={http://www.scopus.com/inward/record.url?eid=2-s2.0-84870894365&partnerID=MN8TOARS}, DOI={10.1109/ecce.2012.6342282}, abstractNote={In this paper, a comparative study on AC-Link™ Topology and a conventional solid state transformer (TIPS) has been shown. Alongside, as a building block, a comparative device level design study has been shown for 6.5kV Si-IGBT/SiC JBS diode, 6.5kV Si-IGBT/Si-PiN Diode and 10kV SiC-MOSFET/SiC-JBS Diode for a zero voltage/current transition and hard switched condition for medium voltage application. It is shown that soft switching yields a considerable reduction of losses for all devices. A low voltage hardware device test prototype has been built and tested. The main motive of the paper is to make a fair judgment on the two topologies with accurate device testing. This is further extended to the maximum attainable frequency analysis, corresponding efficiency comparison, frequency transfer capability and various other topology based comparisons.}, booktitle={2012 IEEE Energy Conversion Congress and Exposition, ECCE 2012}, author={De, A. and Roy, S. and Bhattacharya, Subhashish}, year={2012}, pages={3862–3868} }
 @inproceedings{kumar_green_de_roy_bhattacharya_2012, title={Field Programmable Analog Array (FPAA) based Shunt Active Filter controller}, url={http://www.scopus.com/inward/record.url?eid=2-s2.0-84870904185&partnerID=MN8TOARS}, DOI={10.1109/ecce.2012.6342708}, abstractNote={The presence of multiple harmonics in the power line due to various non-linear loads like adjustable speed drives, computers, fax machine, PLC's, etc. requires high frequency switching of an active filter inverter so as to reduce the harmonic content at the point of common coupling (PCC) to be typically lower than 5% as specified by IEEE 519 harmonic standards. In this paper, the Field Programmable Analog Array (FPAA) based analog controller has been used to implement a Synchronous Reference Frame (SRF) controller algorithm for harmonic current extraction for Shunt Active Filter controller and the results are compared with the conventional digital implementation on Field Programmable Gate Array (FPGA). The FPAA based analog controller implementation proves to be faster than the digital FPGA implementation and can be a potential to replace analog controllers used for active filters.}, booktitle={2012 IEEE Energy Conversion Congress and Exposition, ECCE 2012}, author={Kumar, M. and Green, E. and De, A. and Roy, S. and Bhattacharya, Subhashish}, year={2012}, pages={1011–1016} }
 @inproceedings{mirzaee_de_tripathi_bhattacharya_2011, title={Design comparison of high power medium-voltage converters based on 6.5kV Si-IGBT/Si-PiN diode, 6.5kV Si-IGBT/SiC-JBS diode, and 10kV SiC MOSFET/SiC-JBS diode}, url={http://www.scopus.com/inward/record.url?eid=2-s2.0-81855217441&partnerID=MN8TOARS}, DOI={10.1109/ecce.2011.6064090}, abstractNote={In this paper a comparative design study of high power medium-voltage three-level NPC converter with 6.5kV Si-IGBT/Si-PIN diode, 6.5kV Si-IGBT/SiC-JBS diode, and 10kV SiC-MOSFET/SiC-JBS diode is presented. Power module circuit models including packaging parasitic inductances are created based on accurate device die SPICE circuit models for each (a) 6.5kV Si-IGBT/PiN diode; (b) 6.5kV Si-IGBT/SiC-JBS diode; and (c) 10kV SiC-MOSFET/SiC-JBS diode. Switching waveforms, characteristics, switching power and energy loss measurements of power modules including symmetric/asymmetric parasitic inductances are followed by SPICE circuit simulation and efficiency comparison of a 1MW 3L-NPC converter at 1kHz, 5kHz, and 10kHz switching frequencies. It is shown that 6.5kV Si-IGBT incorporating an anti-parallel SiC-JBS diode, with its high efficiency performance up to 5kHz, is a strong candidate for MW range converters. The 10kV SiC-MOSFET/SiC-JBS diode remains an option for higher switching frequency high power converters.}, booktitle={IEEE Energy Conversion Congress and Exposition: Energy Conversion Innovation for a Clean Energy Future, ECCE 2011, Proceedings}, author={Mirzaee, H. and De, A. and Tripathi, A. and Bhattacharya, Subhashish}, year={2011}, pages={2421–2428} }