@article{goswami_trew_bilbro_2014, title={Modeling of the Gate Leakage Current in AlGaN/GaN HFETs}, volume={61}, ISSN={["1557-9646"]}, DOI={10.1109/ted.2014.2302797}, abstractNote={A new physics-based model of the gate leakage current in AlGaN/GaN heterojunction field effect transistors (HFETs) is demonstrated. The model predicts accurately the gate-leakage current for a wide range of gate-drain voltage. The model is based on the formulation of tunneling and space charge limited (SCL) current flow. The gate leakage current is shown to flow through two paths: 1) the surface of the device establishes the primary path and the current transport mechanism is modeled using SCL transport in the presence of shallow traps and 2) the traps in the AlGaN layer assist in the tunneling of electrons from the gate to the 2-D electron gas, which flows to the drain electrode constituting the second path for the leakage current. The trap levels extracted from the model are consistent with the reports presented in the literature. The model appropriately explains the gate leakage current of the AlGaN/GaN HFETs for drain voltages up to 170 V and is verified by comparing the model results with the measured gate leakage data of industrial devices.}, number={4}, journal={IEEE TRANSACTIONS ON ELECTRON DEVICES}, author={Goswami, Arunesh and Trew, Robert J. and Bilbro, Griff L.}, year={2014}, month={Apr}, pages={1014–1021} }
 @article{goswami_trew_bilbro_2014, title={Physics of gate leakage current in N-polar InAlN/GaN heterojunction field effect transistors}, volume={116}, ISSN={["1089-7550"]}, DOI={10.1063/1.4900581}, abstractNote={A physics based model of the gate leakage current in N-polar InAlN/GaN heterojunction field effect transistors is demonstrated. The model is based on the space charge limited current flow dominated by the effects of deep traps in the InAlN surface layer. The model predicts accurately the gate-leakage measurement data of the N-polar InAlN/GaN device with InAlN cap layer. In the pinch-off state, the gate leakage current conduction through the surface of the device in the drain access region dominates the current flow through the two dimensional electron gas channel. One deep trap level and two levels of shallow traps are extracted by fitting the model results with measurement data.}, number={16}, journal={JOURNAL OF APPLIED PHYSICS}, author={Goswami, Arunesh and Trew, Robert J. and Bilbro, Griff L.}, year={2014}, month={Oct} }
 @article{goswami_trew_bilbro_2013, title={Physics based modeling of gate leakage current due to traps in AlGaN/GaN HFETs}, volume={80}, ISSN={["1879-2405"]}, DOI={10.1016/j.sse.2012.10.005}, abstractNote={Abstract A new model for the gate leakage current in AlGaN/GaN HFETs is demonstrated. The model is completely physical and is based on the formulation of space charge limited current flow. Two levels of shallow traps in the AlGaN surface layer are considered to evaluate the model. The depth of the traps is consistent with the reports presented in the literature. The model adequately explains the measured gate leakage current and for the first time, predicts accurately the experimentally observed change in slope of the gate leakage current versus the gate to drain voltage.}, journal={SOLID-STATE ELECTRONICS}, author={Goswami, A. and Trew, R. J. and Bilbro, G. L.}, year={2013}, month={Feb}, pages={23–27} }
 @inproceedings{trew_hou_schimizzi_goswami_bilbro_2012, title={Large-signal FET Models and a New AlGaN/GaN HFET model for power amplifier design}, DOI={10.1109/icwits.2012.6417696}, abstractNote={A historical review of large-signal compact FET models is presented. Device models used in circuit design typically are based upon equivalent circuit techniques. However, it is possible to develop physics-based compact models. In this work, a new physics-based model for AlGaN/GaN HFETs that can be integrated into the commercial simulators is described. The new model has demonstrated good agreement between measured and simulated data for communications band power amplifiers.}, booktitle={2012 IEEE International Conference on Wireless Information Technology and Systems (ICWITS)}, author={Trew, R. J. and Hou, D. and Schimizzi, R. and Goswami, A. and Bilbro, G. L.}, year={2012} }