Arunesh Goswami

Goswami, A., Trew, R. J., & Bilbro, G. L. (2014). Modeling of the Gate Leakage Current in AlGaN/GaN HFETs. IEEE TRANSACTIONS ON ELECTRON DEVICES, 61(4), 1014–1021. https://doi.org/10.1109/ted.2014.2302797

Goswami, A., Trew, R. J., & Bilbro, G. L. (2014). Physics of gate leakage current in N-polar InAlN/GaN heterojunction field effect transistors. JOURNAL OF APPLIED PHYSICS, 116(16). https://doi.org/10.1063/1.4900581

Goswami, A., Trew, R. J., & Bilbro, G. L. (2013). Physics based modeling of gate leakage current due to traps in AlGaN/GaN HFETs. SOLID-STATE ELECTRONICS, 80, 23–27. https://doi.org/10.1016/j.sse.2012.10.005

Trew, R. J., Hou, D., Schimizzi, R., Goswami, A., & Bilbro, G. L. (2012). Large-signal FET Models and a New AlGaN/GaN HFET model for power amplifier design. 2012 IEEE International Conference on Wireless Information Technology and Systems (ICWITS). https://doi.org/10.1109/icwits.2012.6417696