Andrew J. Klump

Bagheri, P., Klump, A., Washiyama, S., Breckenridge, M. H., Kim, J. H., Guan, Y., … Sitar, Z. (2022). Doping and compensation in heavily Mg doped Al-rich AlGaN films. APPLIED PHYSICS LETTERS, 120(8). https://doi.org/10.1063/5.0082992

Jadhav, A., Bagheri, P., Klump, A., Khachariya, D., Mita, S., Reddy, P., … Sarkar, B. (2022). On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37(1). https://doi.org/10.1088/1361-6641/ac3710

Bagheri, P., Kim, J. H., Washiyama, S., Reddy, P., Klump, A., Kirste, R., … Sitar, Z. (2021). A pathway to highly conducting Ge-doped AlGaN. JOURNAL OF APPLIED PHYSICS, 130(20). https://doi.org/10.1063/5.0071791

Bagheri, P., Reddy, P., Mita, S., Szymanski, D., Kim, J. H., Guan, Y., … Sitar, Z. (2021). On the Ge shallow-to-deep level transition in Al-rich AlGaN. JOURNAL OF APPLIED PHYSICS, 130(5). https://doi.org/10.1063/5.0059037

Washiyama, S., Mirrielees, K. J., Bagheri, P., Baker, J. N., Kim, J.-H., Guo, Q., … Sitar, Z. (2021). Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping. APPLIED PHYSICS LETTERS, 118(4). https://doi.org/10.1063/5.0035957

Kim, J. H., Bagheri, P., Washiyama, S., Klump, A., Kirste, R., Mita, S., … Sitar, Z. (2021). Temperature dependence of electronic bands in Al/GaN by utilization of invariant deep defect transition energies. APPLIED PHYSICS LETTERS, 119(2). https://doi.org/10.1063/5.0055409

Kelley, K. P., Runnerstrom, E. L., Sachet, E., Shelton, C. T., Grimley, E. D., Klump, A., … Maria, J.-P. (2019). Multiple Epsilon-Near-Zero Resonances in Multilayered Cadmium Oxide: Designing Metamaterial-Like Optical Properties in Monolithic Materials. ACS PHOTONICS, 6(5), 1139–1145. https://doi.org/10.1021/acsphotonics.9b00367

Klump, A., Zhou, C., Stevie, F. A., Collazo, R., & Sitar, Z. (2018). Improvement in detection limit for time-of-flight SIMS analysis of dopants in GaN structures. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 36(3). https://doi.org/10.1116/1.5013001

Sarkar, B., Reddy, P., Klump, A., Rounds, R., Breckenridge, M. R., Haidet, B. B., … Sitar, Z. (2018). On Contacts to III-nitride deep-UV emitters. 2018 3rd International Conference on Microwave and Photonics (ICMAP). https://doi.org/10.1109/icmap.2018.8354575

Rounds, R., Sarkar, B., Alden, D., Guo, Q., Klump, A., Hartmann, C., … Collazo, R. (2018). The influence of point defects on the thermal conductivity of AlN crystals. JOURNAL OF APPLIED PHYSICS, 123(18). https://doi.org/10.1063/1.5028141

Rounds, R., Sarkar, B., Klump, A., Hartmann, C., Nagashima, T., Kirste, R., … Collazo, R. (2018). Thermal conductivity of single-crystalline AIN. APPLIED PHYSICS EXPRESS, 11(7). https://doi.org/10.7567/apex.11.071001

Sarkar, B., Mita, S., Reddy, P., Klump, A., Kaess, F., Tweedie, J., … Sitar, Z. (2017). High free carrier concentration in p-GaN grown on AlN substrates. APPLIED PHYSICS LETTERS, 111(3). https://doi.org/10.1063/1.4995239

Kaess, F., Mita, S., Xie, J., Reddy, P., Klump, A., Hernandez-Balderrama, L. H., … Sitar, Z. (2016). Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition. JOURNAL OF APPLIED PHYSICS, 120(10). https://doi.org/10.1063/1.4962017

Reddy, P., Hoffmann, M. P., Kaess, F., Bryan, Z., Bryan, I., Bobea, M., … Sitar, Z. (2016). Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control. JOURNAL OF APPLIED PHYSICS, 120(18). https://doi.org/10.1063/1.4967397

Kaess, F., Reddy, P., Alden, D., Klump, A., Hernandez-Balderrama, L. H., Franke, A., … al. (2016). The effect of illumination power density on carbon defect configuration in silicon doped GaN. JOURNAL OF APPLIED PHYSICS, 120(23). https://doi.org/10.1063/1.4972468