Abdennaceur Karoui

Karoui, F. S., & Karoui, A. (2010). A density functional theory study of the atomic structure, formation energy, and vibrational properties of nitrogen-vacancy-oxygen defects in silicon. JOURNAL OF APPLIED PHYSICS, 108(3). https://doi.org/10.1063/1.3387912

Stoddard, N., Duscher, G., Karoui, A., Stevie, F., & Rozgonyi, G. (2005). Segregation and enhanced diffusion of nitrogen in silicon induced by low energy ion bombardment. JOURNAL OF APPLIED PHYSICS, 97(8). https://doi.org/10.1063/1.1866480

Kvit, A., Karoui, A., Duscher, G., & Rozgonyi, G. A. (2004). "Umbrella"-like precipitates in nitrogen-doped Czochralski silicon wafers. APPLIED PHYSICS LETTERS, 84(11), 1889–1891. https://doi.org/10.1063/1.1669069

Karoui, F. S., Karoui, A., Rozgonyi, G. A., Hourai, M., & Sueoka, K. (2004). Characterization of nucleation sites in nitrogen doped czochralski silicon by density functional theory and molecular mechanics. Diffusion and Defect Data. [Pt. B], Solid State Phenomena, 95-96(2004), 99–104. https://doi.org/10.4028/www.scientific.net/ssp.95-96.99

Karoui, A., Karoui, F. S., Rozgonyi, G. A., & Yang, D. (2004). Oxygen precipitation in nitrogen doped Czochralski silicon wafers. I. Formation mechanisms of near-surface and bulk defects. JOURNAL OF APPLIED PHYSICS, 96(6), 3255–3263. https://doi.org/10.1063/1.1773921

Karoui, A., & Rozgonyi, G. A. (2004). Oxygen precipitation in nitrogen doped Czochralski silicon wafers. II. Effects of nitrogen and oxygen coupling. JOURNAL OF APPLIED PHYSICS, 96(6), 3264–3271. https://doi.org/10.1063/1.1773922

Stoddard, N., Karoui, A., Duscher, G., Kvit, A., & Rozgonyi, G. (2003). In situ point defect generation and agglomeration during electron-beam irradiation of nitrogen-doped Czochralski silicon. ELECTROCHEMICAL AND SOLID STATE LETTERS, 6(11), G134–G136. https://doi.org/10.1149/1.1614471

Rozgonyi, G. A., Karoui, A., Kvit, A., & Duscher, G. (2003, April). Nano-scale analysis of precipitates in nitrogen-doped Czochralski silicon. MICROELECTRONIC ENGINEERING, Vol. 66, pp. 305–313. https://doi.org/10.1016/S0167-9317(02)00923-1

Karoui, A., Karoui, F. S., Rozgonyi, G. A., Hourai, M., & Sueoka, K. (2003). Structure, energetics, and thermal stability of nitrogen-vacancy-related defects in nitrogen doped silicon. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 150(12), G771–G777. https://doi.org/10.1149/1.1621418

Yoganand, S. N., Jagannadham, K., Karoui, A., & Wang, H. (2002). Integrated AlN/diamond heat spreaders for silicon device processing. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 20(6), 1974–1982. https://doi.org/10.1116/1.1513643

Karoui, A., Karoui, F. S., Kvit, A., Rozgonyi, G. A., & Yang, D. (2002). Role of nitrogen related complexes in the formation of defects in silicon. APPLIED PHYSICS LETTERS, 80(12), 2114–2116. https://doi.org/10.1063/1.1462874