@article{chen_hauwiller_kumar_penn_lebeau_2020, title={Expanding the Dimensions of a Small, Two-Dimensional Diffraction Detector}, volume={26}, ISSN={["1435-8115"]}, DOI={10.1017/S1431927620024277}, abstractNote={Abstract}, number={5}, journal={MICROSCOPY AND MICROANALYSIS}, author={Chen, Xi and Hauwiller, Matthew R. and Kumar, Abinash and Penn, Aubrey N. and LeBeau, James M.}, year={2020}, month={Oct}, pages={938–943} }
 @article{milleville_chen_lennon_cleveland_kumar_zhang_bork_tessier_lebeau_chase_et al._2019, title={Engineering Efficient Photon Upconversion in Semiconductor Heterostructures}, volume={13}, ISSN={["1936-086X"]}, DOI={10.1021/acsnano.8b07062}, abstractNote={Photon upconversion is a photophysical process in which two low-energy photons are converted into one high-energy photon. Photon upconversion has broad appeal for a range of applications from biomedical imaging and targeted drug release to solar energy harvesting. Current upconversion nanosystems, including lanthanide-doped nanocrystals and triplet-triplet annihilation molecules, have achieved upconversion quantum yields on the order of 10-30%. However, the performance of these materials is hampered by inherently narrow absorption cross sections and fixed energy levels originating in atomic, ionic, or molecular states. Semiconductors, on the other hand, have inherently wide absorption cross sections. Moreover, recent advances enable the synthesis of colloidal semiconductor nanoparticles with complex heterostructures that can control band alignments and tune optical properties. We synthesize and characterize a three-component heterostructure that successfully upconverts photons under continuous-wave illumination and solar-relevant photon fluxes. The heterostructure is composed of two cadmium selenide quantum dots (QDs), an absorber and emitter, spatially separated by a cadmium sulfide nanorod (NR). We demonstrate that the principles of semiconductor heterostructure engineering can be applied to engineer improved upconversion efficiency. We first eliminate electron trap states near the surface of the absorbing QD and then tailor the band gap of the NR such that charge carriers are funneled to the emitting QD. When combined, these two changes result in a 100-fold improvement in photon upconversion performance.}, number={1}, journal={ACS NANO}, author={Milleville, Christopher C. and Chen, Eric Y. and Lennon, Kyle R. and Cleveland, Jill M. and Kumar, Abinash and Zhang, Jing and Bork, James A. and Tessier, Ansel and LeBeau, James M. and Chase, D. Bruce and et al.}, year={2019}, month={Jan}, pages={489–497} }
 @article{matveyev_mikheev_negrov_zarubin_kumar_grimley_lebeau_gloskovskii_tsymbal_zenkevich_2019, title={Polarization-dependent electric potential distribution across nanoscale ferroelectric Hf0.5Zr0.5O2 in functional memory capacitors}, volume={11}, ISSN={["2040-3372"]}, DOI={10.1039/c9nr05904k}, abstractNote={Using standing-waves in HAXPES technique, we reveal non-linear electrostatic potential profile across nanoscale ferroelectric (FE) HfZrO4 layer in memory capacitors for both polarization directions, implying the drift of non-FE charges at interfaces.}, number={42}, journal={NANOSCALE}, author={Matveyev, Yury and Mikheev, Vitalii and Negrov, Dmitry and Zarubin, Sergei and Kumar, Abinash and Grimley, Everett D. and LeBeau, James M. and Gloskovskii, Andrei and Tsymbal, Evgeny Y. and Zenkevich, Andrei}, year={2019}, month={Nov}, pages={19814–19822} }
 @article{islam_mishra_kumar_chatterjee_ravishankar_ghosh_2019, title={Ultra-sensitive graphene-bismuth telluride nano-wire hybrids for infrared detection}, volume={11}, ISSN={["2040-3372"]}, DOI={10.1039/c8nr08433e}, abstractNote={The myriad technological applications of infrared radiation sensors make the search for ultra-sensitive detectors extremely crucial.}, number={4}, journal={NANOSCALE}, author={Islam, Saurav and Mishra, Jayanta Kumar and Kumar, Abinash and Chatterjee, Dipanwita and Ravishankar, N. and Ghosh, Arindam}, year={2019}, month={Jan}, pages={1579–1586} }