Anthony L. Rice

Bryan, I., Bryan, Z., Mita, S., Rice, A., Tweedie, J., Collazo, R., & Sitar, Z. (2016). Surface kinetics in AlN growth: A universal model for the control of surface morphology in III-nitrides. JOURNAL OF CRYSTAL GROWTH, 438, 81–89. https://doi.org/10.1016/j.jcrysgro.2015.12.022

Bryan, I., Bryan, Z., Mita, S., Rice, A., Hussey, L., Shelton, C., … Sitar, Z. (2016). The role of surface kinetics on composition and quality of AlGaN. JOURNAL OF CRYSTAL GROWTH, 451, 65–71. https://doi.org/10.1016/j.jcrysgro.2016.06.055

Bryan, I., Akouala, C.-R., Tweedie, J., Bryan, Z., Rice, A., Kirste, R., … Sitar, Z. (2014). Surface preparation of non-polar single-crystalline AlN substrates. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4, Vol. 11, pp. 454–457. https://doi.org/10.1002/pssc.201300401

Guo, W., Xie, J., Akouala, C., Mita, S., Rice, A., Tweedie, J., … Sitar, Z. (2013). Comparative study of etching high crystalline quality AlN and GaN. JOURNAL OF CRYSTAL GROWTH, 366, 20–25. https://doi.org/10.1016/j.jcrysgro.2012.12.141

Neuschl, B., Thonke, K., Feneberg, M., Goldhahn, R., Wunderer, T., Yang, Z., … Sitar, Z. (2013). Direct determination of the silicon donor ionization energy in homoepitaxial AlN from photoluminescence two-electron transitions. Applied Physics Letters, 103(12). https://doi.org/10.1063/1.4821183

Bryan, Z., Hoffmann, M., Tweedie, J., Kirste, R., Callsen, G., Bryan, I., … Collazo, R. (2013). Fermi Level Control of Point Defects During Growth of Mg-Doped GaN. JOURNAL OF ELECTRONIC MATERIALS, 42(5), 815–819. https://doi.org/10.1007/s11664-012-2342-9

Bryan, I., Rice, A., Hussey, L., Bryan, Z., Bobea, M., Mita, S., … Sitar, Z. (2013). Strain relaxation by pitting in AlN thin films deposited by metalorganic chemical vapor deposition. APPLIED PHYSICS LETTERS, 102(6). https://doi.org/10.1063/1.4792694

Bobea, M., Tweedie, J., Bryan, I., Bryan, Z., Rice, A., Dalmau, R., … Sitar, Z. (2013). X-ray characterization techniques for the assessment of surface damage in crystalline wafers: A model study in AlN. JOURNAL OF APPLIED PHYSICS, 113(12). https://doi.org/10.1063/1.4798352

Tweedie, J., Collazo, R., Rice, A., Mita, S., Xie, J., Akouala, R.-C., & Sitar, Z. (2012). Schottky barrier and interface chemistry for Ni contacted to Al0.8Ga0.2N grown on c-oriented AlN single crystal substrates. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, Vol. 9, pp. 584–587. https://doi.org/10.1002/pssc.201100435

Collazo, R., Mita, S., Xie, J. Q., Rice, A., Tweedie, J., Dalmau, R., … Sitar, Z. (2011). 265 nm light emitting diodes on AlN single crystal substrates: Growth and characterization. 2011 Conference on Lasers and Electro-Optics (CLEO). https://doi.org/10.1364/cleo_si.2011.ctuu2

Dalmau, R., Moody, B., Schlesser, R., Mita, S., Xie, J., Feneberg, M., … Sitar, Z. (2011). Growth and Characterization of AlN and AlGaN Epitaxial Films on AlN Single Crystal Substrates. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 158(5), H530–H535. https://doi.org/10.1149/1.3560527

Xie, J., Mita, S., Hussey, L., Rice, A., Tweedie, J., LeBeau, J., … Sitar, Z. (2011). On the strain in n-type GaN. APPLIED PHYSICS LETTERS, 99(14). https://doi.org/10.1063/1.3647772

Collazo, R., Mita, S., Xie, J., Rice, A., Tweedie, J., Dalmau, R., … Khan, A. (2011). Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, Vol. 8. https://doi.org/10.1002/pssc.201000964

Feneberg, M., Neuschl, B., Thonke, K., Collazo, R., Rice, A., Sitar, Z., … Goldhahn, R. (2011). Sharp bound and free exciton lines from homoepitaxial AlN. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 208(7), 1520–1522. https://doi.org/10.1002/pssa.201000947

Craft, H. S., Rice, A. L., Collazo, R., Sitar, Z., & Maria, J.-P. (2011). Spectroscopic measurements of the surface stoichiometry of chemical vapor deposited GaN. APPLIED PHYSICS LETTERS, 98(8). https://doi.org/10.1063/1.3554762

Kirste, R., Collazo, R., Callsen, G., Wagner, M. R., Kure, T., Sebastian Reparaz, J., … Hoffmann, A. (2011). Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN. Journal of Applied Physics, 110(9), 093503. https://doi.org/10.1063/1.3656987

Collazo, R., Mita, S., Xie, J., Rice, A., Tweedie, J., Dalmau, R., & Sitar, Z. (2010, January). Implementation of the GaN lateral polarity junction in a MESFET utilizing polar doping selectivity. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Vol. 207, pp. 45–48. https://doi.org/10.1002/pssa.200982629

Rice, A., Collazo, R., Tweedie, J., Xie, J., Mita, S., & Sitar, Z. (2010, April 1). Linear dependency of Al-mole fraction with group-III precursor flows in AlxGa1-xN (0 <= x <= 1) deposition by LP OMVPE. JOURNAL OF CRYSTAL GROWTH, Vol. 312, pp. 1321–1324. https://doi.org/10.1016/j.jcrysgro.2009.09.011

Rice, A., Collazo, R., Tweedie, J., Dalmau, R., Mita, S., Xie, J., & Sitar, Z. (2010). Surface preparation and homoepitaxial deposition of AlN on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition. Journal of Applied Physics, 108(4), 043510. https://doi.org/10.1063/1.3467522

Xie, J., Mita, S., Collazo, R., Rice, A., Tweedie, J., & Sitar, Z. (2010). The effect of N-polar GaN domains as Ohmic contacts. APPLIED PHYSICS LETTERS, 97(12). https://doi.org/10.1063/1.3491173

Tweedie, J., Collazo, R., Rice, A., Xie, J., Mita, S., Dalmau, R., & Sitar, Z. (2010). X-ray characterization of composition and relaxation of Al(x)Ga(1-x)N(0 <= x <= 1) layers grown on GaN/sapphire templates by low pressure organometallic vapor phase epitaxy. JOURNAL OF APPLIED PHYSICS, 108(4). https://doi.org/10.1063/1.3457149

Mita, S., Collazo, R., Rice, A., Dalmau, R. F., & Sitar, Z. (2008). Influence of gallium supersaturation on the properties of GaN grown by metalorganic chemical vapor deposition. JOURNAL OF APPLIED PHYSICS, 104(1). https://doi.org/10.1063/1.2952027

Collazo, R., Mita, S., Rice, A., Dalmau, R. F., & Sitar, Z. (2007). Simultaneous growth of a GaN p/n lateral polarity junction by polar selective doping. APPLIED PHYSICS LETTERS, 91(21). https://doi.org/10.1063/1.2816893

Hoffmann, M. P., Gerhold, M., Kirste, R., Rice, A., Akouala, C. R., Xie, J. Q. Q., … Sitar, Z. Fabrication and characterization of lateral polar GaN structures for second harmonic generation. Quantum sensing and nanophotonic devices x, 8631.