Ajit Kanale

Narwal, R., Rawat, S., Kanale, A., Cheng, T.-H., Agarwal, A., Bhattacharya, S., … Hopkins, D. C. (2023). Analysis and Characterization of Four-quadrant Switches based Commutation Cell. 2023 IEEE Applied Power Electronics Conference and Exposition (APEC), 2023-March, 209–216. https://doi.org/10.1109/APEC43580.2023.10131312

Narasimhan, S., Kanale, A., Bhattacharya, S., & Baliga, J. B. (2023). Performance Evaluation of 3.3 kV SiC MOSFET and Schottky Diode Based Reverse Voltage Blocking Switch for Medium Voltage Current Source Inverter Application. IEEE ACCESS, 11, 89277–89289. https://doi.org/10.1109/ACCESS.2023.3302916

Bhattacharya, S., Narwal, R., Shah, S. S., Baliga, B. J., Agarwal, A., Kanale, A., … Cheng, T.-H. (2023). Power Conversion Systems Enabled by SiC BiDFET Device. IEEE POWER ELECTRONICS MAGAZINE, 10(1), 39–43. https://doi.org/10.1109/MPEL.2023.3237060

Baliga, B. J., Hopkins, D., Bhattacharya, S., Agarwal, A., Cheng, T.-H., Narwal, R., … Han, K. (2023). The BiDFET Device and Its Impact on Converters. IEEE POWER ELECTRONICS MAGAZINE, 10(1), 20–27. https://doi.org/10.1109/MPEL.2023.3237059

Kanale, A., Cheng, T.-H., Narwal, R., Agarwal, A., Baliga, B. J., Bhattacharya, S., & Hopkins, D. C. (2022). Design Considerations for Developing 1.2 kV 4H-SiC BiDFET-enabled Power Conversion Systems. Presented at the 2022 IEEE Energy Conversion Congress and Exposition (ECCE). https://doi.org/10.1109/ECCE50734.2022.9947715

Kanale, A., Agarwal, A., Baliga, B. J., & Bhattacharya, S. (2022). Monolithic Reverse Blocking 1.2 kV 4H-SiC Power Transistor: A Novel, Single-Chip, Three-Terminal Device for Current Source Inverter Applications. IEEE TRANSACTIONS ON POWER ELECTRONICS, 37(9), 10112–10116. https://doi.org/10.1109/TPEL.2022.3166933

Kanale, A., & Baliga, B. J. (2021). A New User-Configurable Method to Improve Short-Circuit Ruggedness of 1.2-kV SiC Power MOSFETs. IEEE TRANSACTIONS ON POWER ELECTRONICS, 36(2), 2059–2067. https://doi.org/10.1109/TPEL.2020.3010154

Agarwal, A., Kanale, A., & Baliga, B. J. (2021). Advanced 650 V SiC Power MOSFETs With 10 V Gate Drive Compatible With Si Superjunction Devices. IEEE TRANSACTIONS ON POWER ELECTRONICS, 36(3), 3335–3345. https://doi.org/10.1109/TPEL.2020.3017215

Kanale, A., & Baliga, B. J. (2021). Comparison of BaSIC(DMM) and BaSIC(EMM) Topologies to Enhance Short-Circuit Capability in SiC Power MOSFETs. 2021 THIRTY-SIXTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2021), pp. 1275–1281. https://doi.org/10.1109/APEC42165.2021.9487334

Kanale, A., Narasimhan, S., Cheng, T.-H., Agarwal, A., Shah, S. S., Baliga, B. J., … Hopkins, D. C. (2021). Comparison of the Capacitances and Switching Losses of 1.2 kV Common-Source and Common- Drain Bidirectional Switch Topologies. 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 112–117. https://doi.org/10.1109/WiPDA49284.2021.9645130

Kanale, A., & Baliga, B. J. (2021). Eliminating Repetitive Short-Circuit Degradation and Failure of 1.2-kV SiC Power MOSFETs. IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 9(6), 6773–6779. https://doi.org/10.1109/JESTPE.2020.3045117

Kanale, A., & Baliga, B. J. (2021). Excellent Static and Dynamic Scaling of Power Handling Capability of the BaSIC(DMM) Topology with 1.2 kV SiC Power MOSFETs. 2021 IEEE 8TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), pp. 14–17. https://doi.org/10.1109/WiPDA49284.2021.9645145

Shah, S. S., Narwal, R., Bhattacharya, S., Kanale, A., Cheng, T.-H., Mehrotra, U., … Hopkins, D. C. (2021). Optimized AC/DC Dual Active Bridge Converter using Monolithic SiC Bidirectional FET (BiDFET) for Solar PV Applications. 2021 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), pp. 568–575. https://doi.org/10.1109/ECCE47101.2021.9595533

Narasimhan, S., Kanale, A., Bhattacharya, S., & Baliga, J. (2021). Performance Evaluation of 3.3 kV SiC MOSFET and Schottky Diode for Medium Voltage Current Source Inverter Application. 2021 IEEE 8TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), pp. 366–371. https://doi.org/10.1109/WiPDA49284.2021.9645089

Kanale, A., & Baliga, B. J. (2021). Selection Methodology for Si Power MOSFETs Used to Enhance SiC Power MOSFET Short-Circuit Capability With the BaSIC(EMM) Topology. IEEE TRANSACTIONS ON POWER ELECTRONICS, 36(7), 8243–8252. https://doi.org/10.1109/TPEL.2020.3043281

Kanale, A., Cheng, T.-H., Shah, S. S., Han, K., Agarwal, A., Baliga, B. J., … Bhattacharya, S. (2021). Switching Characteristics of a 1.2 kV, 50 mΩ SiC Monolithic Bidirectional Field Effect Transistor (BiDFET) with Integrated JBS Diodes. 2021 IEEE Applied Power Electronics Conference and Exposition (APEC), 1267–1274. https://doi.org/10.1109/APEC42165.2021.9487410

Kanale, A., & Baliga, B. J. (2021). Theoretical Optimization of the Si GSS-DMM Device in the BaSIC Topology for SiC Power MOSFET Short-Circuit Capability Improvement. IEEE ACCESS, 9, 70039–70047. https://doi.org/10.1109/ACCESS.2021.3078134

Kanale, A., & Baliga, B. J. (2020). Achieving Short Circuit Capability for 600 V GaN FETs Using a Gate-Source-Shorted Si Depletion-Mode MOSFET in Series with the Source. 2020 IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA). https://doi.org/10.1109/WiPDAAsia49671.2020.9360275

Kanale, A., & Baliga, B. J. (2020). Enhancing Short Circuit Capability of 1.2-kV Si IGBT Using a Gate-Source Shorted Si Depletion Mode MOSFET in Series With the Emitter. IEEE TRANSACTIONS ON POWER ELECTRONICS, 35(6), 6350–6361. https://doi.org/10.1109/TPEL.2019.2953589