Works (5)
Updated: July 5th, 2023 15:37
2017 journal article
A 28-GHz Harmonic-Tuned Power Amplifier in 130-nm SiGe BiCMOS
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 65(2), 522–535.
Contributors: n & B. Floyd n
author keywords: Continuous mode; fifth-generation (5G); harmonic matching network design; millimeter-wave (mm-wave); power amplifier (PA); SiGe
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Sources: Web Of Science, NC State University Libraries, ORCID
Added: August 6, 2018
2017 journal article
A 28-GHz SiGe BiCMOS PA With 32% Efficiency and 23-dBm Output Power
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 52(6), 1680–1686.
Contributors: n, F. Aryanfar* & B. Floyd n
author keywords: 28 GHz; fifth generation (5G); power amplifier (PA); power combining; SiGe; transformer
TL;DR:
This paper presents a two-stage, four-way combined power amplifier operating in the 27–31-GHz frequency range in 180-nm SiGe BiCMOS technology and presents a co-optimization technique for the transformer and the adjoining matching components to minimize the power loss of the full output network.
(via Semantic Scholar)
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Sources: Web Of Science, NC State University Libraries, ORCID
Added: August 6, 2018
2017 journal article
A 60-GHz Dual-Vector Doherty Beamformer
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 52(5), 1373–1387.
author keywords: 60 GHz; millimeter-wave; phased array; transmitter; Doherty amplifier; phase shifter
TL;DR:
A 60-GHz transmit beamformer implemented in 130-nm SiGe BiCMOS technology which includes a Doherty amplifier driven by a dual-vector phase rotator (DVR) allows optimization of both linearity and efficiency profiles across frequency.
(via Semantic Scholar)
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Sources: Web Of Science, NC State University Libraries, ORCID
Added: August 6, 2018
2014 conference paper
A 28-GHz class-J power amplifier with 18-dBm output power and 35% peak PAE in 120-nm SiGe BiCMOS
2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SIRF), 71–73.
Contributors: n & B. Floyd n
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Sources: NC State University Libraries, NC State University Libraries, ORCID
Added: August 6, 2018
2014 conference paper
A power-efficient 4-element beamformer in 120-nm SiGe BiCMOS for 28-GHz cellular communications
2014 ieee bipolar/bicmos circuits and technology meeting (bctm), 68–71.
TL;DR:
A 4-element beamformer designed in 120-nm SiGe BiCMOS technology for 28-GHz mobile millimeter-wave broadband system is presented in this paper and shows high gain and high efficiency at both peak and backed-off power levels.
(via Semantic Scholar)
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Sources: NC State University Libraries, NC State University Libraries, ORCID
Added: August 6, 2018
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