2017 journal article
Enhanced total internal reflection using low-index nanolattice materials
OPTICS LETTERS, 42(20), 4123–4126.
2017 journal article
Large-area nanolattice film with enhanced modulus, hardness, and energy dissipation
Scientific Reports, 7.
2017 journal article
Nanostructured antireflective in-plane solar harvester
OPTICS EXPRESS, 25(16), A840–A850.
2016 journal article
Fabrication and design of metal nano-accordion structures using atomic layer deposition and interference lithography
NANOSCALE, 8(9), 4984–4990.
2016 journal article
Fabrication and structural properties of AlN submicron periodic lateral polar structures and waveguides for UV-C applications
APPLIED PHYSICS LETTERS, 108(26).
Contributors: D. Alden n, W. Guo n, R. Kirste n, F. Kaess n, I. Bryan n, T. Troha n, n, P. Reddy n
2016 journal article
Wicking Enhancement in Three-Dimensional Hierarchical Nanostructures
LANGMUIR, 32(32), 8029–8033.
Contributors: Z. Wang n, J. Zhao n, n, E. Dandley n, C. Oldham n, T. Fang n , G. Parsons n , C. Chang n
2015 journal article
Multifunctional nano-accordion structures for stretchable transparent conductors
MATERIALS HORIZONS, 2(5), 486–494.
Contributors: E. Dandley n, J. Zhao n, X. Zhang n, C. Oldham n, G. Parsons n , C. Chang n n,
2015 journal article
Ordered 3D Thin-Shell Nanolattice Materials with Near-Unity Refractive Indices
ADVANCED FUNCTIONAL MATERIALS, 25(42), 6644–6649.
Contributors: X. Zhang n, n, E. Dandley n, J. Zhao n, C. Oldham n, B. Wu *, G. Parsons n , C. Chang n
2013 journal article
Antireflection effects at nanostructured material interfaces and the suppression of thin-film interference
NANOTECHNOLOGY, 24(23).
2013 journal article
Fabrication of subwavelength periodic nanostructures using liquid immersion Lloyd's mirror interference lithography
OPTICS LETTERS, 38(14), 2531–2534.
2013 journal article
Study on dielectric and piezoelectric properties of 0.7 Pb(Mg1/3Nb2/3)O-3-0.3 PbTiO3 single crystal with nano-patterned composite electrode
JOURNAL OF APPLIED PHYSICS, 114(11).
Contributors: W. Chang n, W. Huang n, n, C. Chang n, J. Tian *, P. Han*, X. Jiang n
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