@article{hewitt_boltersdorf_maggard_dougherty_2017, title={Recovery of of the bulk-like electronic structure of manganese phthalocyanine beyond the first monolayer on Bi2Te3}, volume={662}, ISSN={["1879-2758"]}, DOI={10.1016/j.susc.2017.03.014}, abstractNote={The evolution of electronic structure of manganese phthalocyanine on Bi2Te3 shows a transition to a bulk-like aspect abruptly after completion of the first layer. This allows the inference that, in the first layer, there is charge transfer and electronic hybridization involving the occupied Mn-derived d orbitals of the molecule into the conduction band of the substrate. The charge transfer coupling is seen using angle-resolved ultraviolet photoelectron spectroscopy by monitoring the evolution of work function and band structure with increasing molecular film thickness. The electronic structure in the second layer is more bulk-like as indicated by the reappearance of well-known low energy d orbitals that were depopulated in the first layer. Scanning tunneling microscopy shows that the transition to bulk like behavior is also reflected in film structure as a transition from a unique disordered monolayer to a locally ordered and dense second layer. These observations are relevant to ongoing efforts to control topological insulator interfaces especially for spintronics applications.}, journal={SURFACE SCIENCE}, author={Hewitt, A. S. and Boltersdorf, J. and Maggard, P. A. and Dougherty, D. B.}, year={2017}, month={Aug}, pages={87–92} }
 @article{hewitt_wang_boltersdorf_maggard_dougherty_2014, title={Coexisting Bi and Se surface terminations of cleaved Bi2Se3 single crystals}, volume={32}, number={4}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Hewitt, A. S. and Wang, J. Y. and Boltersdorf, J. and Maggard, P. A. and Dougherty, D. B.}, year={2014} }
 @article{xu_hewitt_wang_guan_boltersdorf_maggard_dougherty_gundogdu_2014, title={Intrinsic and extrinsic effects on the electrostatic field at the surface of Bi2Se3}, volume={116}, number={4}, journal={Journal of Applied Physics}, author={Xu, C. and Hewitt, A. and Wang, J. Y. and Guan, T. S. and Boltersdorf, J. and Maggard, P. A. and Dougherty, D. B. and Gundogdu, K.}, year={2014} }
 @article{wang_hewitt_kumar_boltersdorf_guan_hunte_maggard_brom_redwing_dougherty_2014, title={Molecular Doping Control at a Topological Insulator Surface: F-4-TCNQ on Bi2Se3}, volume={118}, ISSN={["1932-7447"]}, DOI={10.1021/jp412690h}, abstractNote={Recent electrical measurements have accessed transport in the topological surface state band of thin exfoliated samples of Bi2Se3 by removing the bulk n-type doping by contact with thin films of the molecular acceptor F4-TCNQ. Here we report on the film growth and interfacial electronic characterization of F4-TCNQ grown on Bi2Se3. Atomic force microscopy shows wetting layer formation followed by 3D island growth. X-ray photoelectron spectroscopy is consistent with this picture and also shows that charge transferred to the molecular layer is localized on nitrogen atoms. Ultraviolet photoelectron spectroscopy shows a work function increase and an upward shift of the valence band edge that suggest significant reduction in carrier density at the Bi2Se3 surface.}, number={27}, journal={JOURNAL OF PHYSICAL CHEMISTRY C}, author={Wang, J. and Hewitt, A. S. and Kumar, R. and Boltersdorf, J. and Guan, T. and Hunte, F. and Maggard, P. A. and Brom, J. E. and Redwing, J. M. and Dougherty, D. B.}, year={2014}, month={Jul}, pages={14860–14865} }