David Aspnes Le, L. V. V., Deijkers, J. A. A., Kim, Y. D. D., Wadley, H. N. G., & Aspnes, D. E. E. (2023). Noise reduction and peak detection in x-ray diffraction data by linear and nonlinear methods. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 41(4). https://doi.org/10.1116/6.0002526 Gao, Y., Aspnes, D. E., & Franzen, S. (2022, January 10). Classical Model of Surface Enhanced Infrared Absorption (SEIRA) Spectroscopy. JOURNAL OF PHYSICAL CHEMISTRY A, Vol. 1. https://doi.org/10.1021/acs.jpca.1c08463 Le, L. V., Kim, T. J., Kim, Y. D., & Aspnes, D. E. (2022). Decoding 'Maximum Entropy' Deconvolution. ENTROPY, 24(9). https://doi.org/10.3390/e24091238 Le, L. V., Kim, T. J., Kim, Y. D., & Aspnes, D. E. (2022, October 17). Detection of the Biexciton of Monolayer WS2 in Ellipsometric Data: A Maximum-Entropy Success. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol. 10. https://doi.org/10.1002/pssb.202200271 Le, L. V., Kim, Y. D., & Aspnes, D. E. (2022). Eliminating noise from spectra by linear and nonlinear methods. THIN SOLID FILMS, 761. https://doi.org/10.1016/j.tsf.2022.139515 Le, L. V., Kim, Y. D., & Aspnes, D. E. (2022). Eliminating white noise in spectra: A generalized maximum-entropy approach. JOURNAL OF APPLIED PHYSICS, 132(7). https://doi.org/10.1063/5.0100140 Le, L. V., Kim, T. J., Kim, Y. D., & Aspnes, D. E. (2022, August 4). Reducing or eliminating noise in ellipsometric spectra. JOURNAL OF THE KOREAN PHYSICAL SOCIETY, Vol. 8. https://doi.org/10.1007/s40042-022-00554-3 Le, L. V., Kim, T. J., Kim, Y. D., & Aspnes, D. E. (2021). Maximum-entropy revisited: Optimal filtering of spectra. JOURNAL OF APPLIED PHYSICS, 129(22). https://doi.org/10.1063/5.0051602 Gao, Y., Aspnes, D. E., & Franzen, S. (2020). Classical Correlation Model of Resonance Raman Spectroscopy. JOURNAL OF PHYSICAL CHEMISTRY A, 124(44), 9177–9186. https://doi.org/10.1021/acs.jpca.0c04401 Sachet, E., Aspnes, D. E., Maria, J.-P., & Franzen, S. (2020). Critical Test of the Interaction of Surface Plasmon Resonances with Molecular Vibrational Transitions. JOURNAL OF PHYSICAL CHEMISTRY A, 124(9), 1744–1753. https://doi.org/10.1021/acs.jpca.9b10835 Le, V. L., Kim, T. J., Kim, Y. D., & Aspnes, D. E. (2020). External removal of endpoint-discontinuity artifacts in the reciprocal-space analysis of spectra. CURRENT APPLIED PHYSICS, 20(1), 232–236. https://doi.org/10.1016/j.cap.2019.11.004 Le, L. V., Kim, Y. D., & Aspnes, D. E. (2020). Quantitative assessment of linear noise-reduction filters for spectroscopy. OPTICS EXPRESS, 28(26), 38917–38933. https://doi.org/10.1364/OE.411768 Le, V. L., Kim, T. J., Kim, Y. D., & Aspnes, D. E. (2019). Combined interpolation, scale change, and noise reduction in spectral analysis. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 37(5). https://doi.org/10.1116/1.5120358 Kim, T. J., Park, H. G., Byun, J. S., Le, V. L., Nguyen, H. T., Nguyen, X. A., … Aspnes, D. E. (2019). Dielectric Functions and Critical Points of GaAsSb Alloys. JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 74(6), 595–599. https://doi.org/10.3938/jkps.74.595 Aspnes, D. E., Le, V. L., & Kim, Y. D. (2019). Linear and nonlinear filtering of spectra. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 37(5). https://doi.org/10.1116/1.5118230 Morales, D., Stoute, N. A., Yu, Z., Aspnes, D. E., & Dickey, M. D. (2016). Liquid gallium and the eutectic gallium indium (EGaIn) alloy: Dielectric functions from 1.24 to 3.1 eV by electrochemical reduction of surface oxides. APPLIED PHYSICS LETTERS, 109(9). https://doi.org/10.1063/1.4961910 Aspnes, D. E. (2015). Bond Models in Linear and Nonlinear Optics. ULTRAFAST NONLINEAR IMAGING AND SPECTROSCOPY III, Vol. 9584. https://doi.org/10.1117/12.2188400 Yu, Y., Yu, Y., Cai, Y., Li, W., Gurarslan, A., Peelaers, H., … Cao, L. (2015). Exciton-dominated Dielectric Function of Atomically Thin MoS2 Films. SCIENTIFIC REPORTS, 5. https://doi.org/10.1038/srep16996 Rowe, J., Aspnes, D., Pinczuk, A., & Yu, P. Y. (2015, February). Manuel Cardona Castro obituary. PHYSICS TODAY, Vol. 68, pp. 58–58. https://doi.org/10.1063/pt.3.2695 Aspnes, D. E., & Choi, S. G. (2014, November 28). Combined direct- and reciprocal-space approach for converting spectra to energy scales with negligible loss of information. THIN SOLID FILMS, Vol. 571, pp. 506–508. https://doi.org/10.1016/j.tsf.2013.11.028 Kim, T. J., Hwang, S. Y., Byun, J. S., Aspnes, D. E., Lee, E. H., Song, J. D., … Kim, Y. D. (2014). Dielectric functions and interband transitions of InxAl1 (-) P-x alloys. CURRENT APPLIED PHYSICS, 14(9), 1273–1276. https://doi.org/10.1016/j.cap.2014.06.026 Kim, T. J., Byun, J. S., Hwang, S. Y., Park, H. G., Kang, Y. R., Park, J. C., … Aspnes, D. E. (2014). Parameterization of the dielectric functions of InGaSb alloys. CURRENT APPLIED PHYSICS, 14(5), 768–771. https://doi.org/10.1016/j.cap.2014.03.010 Aspnes, D. E. (2014, November 28). Spectroscopic ellipsometry - Past, present, and future. THIN SOLID FILMS, Vol. 571, pp. 334–344. https://doi.org/10.1016/j.tsf.2014.03.056 Hwang, S. Y., Kim, T. J., Byun, J. S., Barange, N. S., Diware, M. S., Kim, Y. D., … Song, J. D. (2013, November 29). Analytic representation of the dielectric functions of InAsxSb1-x alloys in the parametric model. THIN SOLID FILMS, Vol. 547, pp. 276–279. https://doi.org/10.1016/j.tsf.2012.11.088 Kim, T. J., Yoon, J. J., Byun, J. S., Hwang, S. Y., Aspnes, D. E., Shin, S. H., … Kim, Y. D. (2013). Interband transitions and dielectric functions of InGaSb alloys. APPLIED PHYSICS LETTERS, 102(10). https://doi.org/10.1063/1.4795622 Reynolds, J. G., Reynolds, C. L., Jr., Mohanta, A., Muth, J. F., Rowe, J. E., Everitt, H. O., & Aspnes, D. E. (2013). Shallow acceptor complexes in p-type ZnO. APPLIED PHYSICS LETTERS, 102(15). https://doi.org/10.1063/1.4802753 Aspnes, D. E. (2013). Spectroscopic ellipsometry-A perspective. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 31(5). https://doi.org/10.1116/1.4809747 Gokce, B., Gundogdu, K., & Aspnes, D. E. (2012). Control of the oxidation kinetics of H-terminated (111)Si by using the carrier concentration and the strain: a second-harmonic-generation investigation. JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 60(10), 1685–1689. https://doi.org/10.3938/jkps.60.1685 Nelson, F., Sandin, A., Dougherty, D. B., Aspnes, D. E., Rowe, J. E., & Diebold, A. C. (2012). Optical and structural characterization of epitaxial graphene on vicinal 6H-SiC(0001)-Si by spectroscopic ellipsometry, Auger spectroscopy, and STM. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 30(4). https://doi.org/10.1116/1.4726199 Choi, S. G., Schilfgaarde, M., Aspnes, D. E., Norman, A. G., Olson, J. M., Peshek, T. J., & Levi, D. H. (2011). Above-band-gap dielectric functions of ZnGeAs2: Ellipsometric measurements and quasiparticle self-consistent GW calculations. PHYSICAL REVIEW B, 83(23). https://doi.org/10.1103/physrevb.83.235210 Ghong, T. H., Han, S.-H., Chung, J.-M., Byun, J. S., Aspnes, D. E., Kim, Y. D., … Cheong, H. (2011). Analysis of surface roughness of critical-dimension structures using spectroscopic ellipsometry. Presented at the PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors. https://doi.org/10.1063/1.3666489 Gokce, B., Gundogdu, K., Adles, E. J., & Aspnes, D. E. (2011, May). Back-reflection Second-harmonic Generation of (111)Si: Theory and Experiment. JOURNAL OF THE KOREAN PHYSICAL SOCIETY, Vol. 58, pp. 1237–1243. https://doi.org/10.3938/jkps.58.1237 Gokce, B., Aspnes, D. E., Lucovsky, G., & Gundogdu, K. (2011). Bond-specific reaction kinetics during the oxidation of (111) Si: Effect of n-type doping. Applied Physics Letters, 98(2), 021904. https://doi.org/10.1063/1.3537809 Gokce, B., Aspnes, D. E., & Gundogdu, K. (2011). Effect of strain on bond-specific reaction kinetics during the oxidation of H-terminated (111) Si. Applied Physics Letters, 98(12), 121912. https://doi.org/10.1063/1.3567528 Gokce, B., Adles, E. J., Aspnes, D. E., & Gundogdu, K. (2011). Measurement and Control of In-Plane Surface Chemistry During Oxidation of H-Terminated (111)Si. PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, Vol. 1399. https://doi.org/10.1063/1.3666321 Aspnes, D. E. (2011, February 28). Plasmonics and effective-medium theories. THIN SOLID FILMS, Vol. 519, pp. 2571–2574. https://doi.org/10.1016/j.tsf.2010.12.081 Ghong, T. H., Han, S.-H., Chung, J.-M., Byun, J. S., Kim, Y. D., & Aspnes, D. E. (2011, May). Roughness Analysis of the Critical Dimension by Using Spectroscopic Ellipsometry. JOURNAL OF THE KOREAN PHYSICAL SOCIETY, Vol. 58, pp. 1426–1428. https://doi.org/10.3938/jkps.58.1426 Aspnes, D. E. (2010, August). Bond models in linear and nonlinear optics. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol. 247, pp. 1873–1880. https://doi.org/10.1002/pssb.200983937 Adles, E. J., & Aspnes, D. E. (2010). Chemical-etch-assisted growth of epitaxial zinc oxide. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 28, pp. 689–692. https://doi.org/10.1116/1.3305814 Yoon, J. J., Kim, T. J., Jung, Y. W., Aspnes, D. E., Kim, Y. D., Kim, H. J., … Song, J. D. (2010). Dielectric functions and interband transitions of In1-xAlxSb alloys. APPLIED PHYSICS LETTERS, 97(11). https://doi.org/10.1063/1.3488827 Choi, S. G., Aspnes, D. E., Fuchser, A. L., Martinez-Tomas, C., Munoz Sanjose, V., & Levi, D. H. (2010). Ellipsometric study of single-crystal gamma-InSe from 1.5 to 9.2 eV. APPLIED PHYSICS LETTERS, 96(18). https://doi.org/10.1063/1.3420080 Gokce, B., Adles, E. J., Aspnes, D. E., & Gundogdu, K. (2010). Measurement and control of in-plane surface chemistry during the oxidation of H-terminated (111) Si. Proceedings of the National Academy of Sciences, 107(41), 17503–17508. https://doi.org/10.1073/pnas.1011295107 Ghong, T. H., Han, S.-H., Chung, J.-M., Byun, J. S., Kim, T. J., Aspnes, D. E., … Kim, Y.-W. (2010). Nondestructive analysis of coated periodic nanostructures from optical data. OPTICS LETTERS, 35(5), 733–735. https://doi.org/10.1364/ol.35.000733 Liu, X., & Aspnes, D. E. (2010). Thickness inhomogeneities and growth mechanisms of GaP heteroepitaxy by organometallic chemical vapor deposition. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 28(4), 583–589. https://doi.org/10.1116/1.3442805 Liu, X., & Aspnes, D. E. (2009). Analytical solution of thickness variations in selective area growth by organometallic chemical vapor deposition. Applied Physics Letters, 94(25), 253112. https://doi.org/10.1063/1.3157266 Arwin, H., & Aspnes, D. E. (2009). Follow the light: Ellipsometry and polarimetry. PHYSICS TODAY, 62(5), 70–71. https://doi.org/10.1063/1.3141950 Kim, T. J., Yoon, J. J., Hwang, S. Y., Aspnes, D. E., Kim, Y. D., Kim, H. J., … Song, J. D. (2009). Interband transitions of InAsxSb1-x alloy films. APPLIED PHYSICS LETTERS, 95(11). https://doi.org/10.1063/1.3216056 Franzen, S., Rhodes, C., Cerruti, M., Gerber, R. W., Losego, M., Maria, J.-P., & Aspnes, D. E. (2009). Plasmonic phenomena in indium tin oxide and ITO-Au hybrid films. OPTICS LETTERS, 34(18), 2867–2869. https://doi.org/10.1364/OL.34.002867 Kim, T. J., Yoon, J. J., Kim, Y. D., Aspnes, D. E., Klein, M. V., Ko, D.-S., … Coleman, J. J. (2008, November 30). Analysis of interface layers by spectroscopic ellipsometry. APPLIED SURFACE SCIENCE, Vol. 255, pp. 640–642. https://doi.org/10.1016/j.apsusc.2008.07.005 Adles, E. J., & Aspnes, D. E. (2008). Application of the anisotropic bond model to second-harmonic generation from amorphous media. PHYSICAL REVIEW B, 77(16). https://doi.org/10.1103/physrevb.77.165102 Rhodes, C., Cerruti, M., Efremenko, A., Losego, M., Aspnes, D. E., Maria, J.-P., & Franzen, S. (2008). Dependence of plasmon polaritons on the thickness of indium tin oxide thin films. Journal of Applied Physics, 103(9), 093108. https://doi.org/10.1063/1.2908862 Choi, S. G., Aspnes, D. E., Stoute, N. A., Kim, Y. D., Kim, H. J., Chang, Y.-C., & Palmstrom, C. J. (2008). Dielectric properties of InAsP alloy thin films and evaluation of direct- and reciprocal-space methods of determining critical-point parameters. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 205(4), 884–887. https://doi.org/10.1002/pssa.200777848 Liu, X., Kim, I.-K., & Aspnes, D. E. (2008). Investigation of heteroepitaxy on nanoscopically roughened (001)Si by real-time spectroscopic polarimetry. Physica Status Solidi (c), 5(5), 1312–1315. https://doi.org/10.1002/pssc.200777896 Jung, Y. W., Kim, T. J., Yoon, J. J., Kim, Y. D., & Aspnes, D. E. (2008). Model dielectric functions for AlxGa1-xAs alloys of arbitrary compositions. JOURNAL OF APPLIED PHYSICS, 104(1). https://doi.org/10.1063/1.2952536 Aspnes, D. E. (2008). Normal incidence rotating compensator ellipsometer. Washington, DC: U.S. Patent and Trademark Office. Yoon, J. J., Ghong, T. H., Byun, J. S., Kim, Y. D., Aspnes, D. E., Kim, H. J., … Song, J. D. (2008). Optical properties of InxAl1-xAs alloy films. APPLIED PHYSICS LETTERS, 92(15). https://doi.org/10.1063/1.2909546 Ghong, T. H., Kim, T. J., Jung, Y. W., Kim, Y. D., & Aspnes, D. E. (2008). Overlayer effects in the critical-point analysis of ellipsometric spectra: Application to InxGa1-xAs alloys. JOURNAL OF APPLIED PHYSICS, 103(7). https://doi.org/10.1063/1.2902502 Adles, E. J., & Aspnes, D. E. (2008). The anisotropic bond model of nonlinear optics. Physica Status Solidi (a), 205(4), 728–731. https://doi.org/10.1002/pssa.200777846 Asar, M., & Aspnes, D. E. (2008). The nearly aligned rotating-monoplate compensator. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 205(4), 739–742. https://doi.org/10.1002/pssa.200777871 Liu, X., & Aspnes, D. E. (2008). Thickness inhomogenities in the organometallic chemical vapor deposition of GaP. APPLIED PHYSICS LETTERS, 93(20). https://doi.org/10.1063/1.3029742 Kim, I. K., & Aspnes, D. E. (2007). Analytic determination of n, k, and d of an absorbing film from polarimetric data in the thin-film limit. JOURNAL OF APPLIED PHYSICS, 101(3). https://doi.org/10.1063/1.2434004 Choi, S. G., Palmstrom, C. J., Kim, Y. D., Aspnes, D. E., Kim, H. J., & Chang, Y.-C. (2007). Dielectric functions and electronic structure of InAsxP1-x films on InP. APPLIED PHYSICS LETTERS, 91(4). https://doi.org/10.1063/1.2766682 Jung, Y. W., Ghong, T. H., Kim, Y. D., & Aspnes, D. E. (2007). Effect of overlayers on critical-point parameters in the analysis of ellipsometric spectra. APPLIED PHYSICS LETTERS, 91(12). https://doi.org/10.1063/1.2784187 Liu, X., Kim, I. K., & Aspnes, D. E. (2007). Initial stages of GaP heteroepitaxy on nanoscopically roughened (001)SI. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 25, pp. 1448–1452. https://doi.org/10.1116/1.2750345 Kim, T. J., Ghong, T. H., Kim, Y. D., Aspnes, D. E., Klein, M. V., Ko, D.-S., … Coleman, J. J. (2007). Investigation of effective-medium approximation, alloy, average-composition, and graded-composition models for interface analysis by spectroscopic ellipsometry. JOURNAL OF APPLIED PHYSICS, 102(6). https://doi.org/10.1063/1.2781519 Aspnes, D. E. (2007). Normal incidence rotating compensator ellipsometer. Washington, DC: U.S. Patent and Trademark Office. Ghong, T. H., Kim, Y. D., Aspnes, D. E., Klein, M. V., Ko, D. S., Kim, Y. W., … Coleman, J. (2006). Interface analysis of an AlGaAs multilayer system by using spectroscopic ellipsometry. Journal of the Korean Physical Society, 48(6), 1601–1605. Lucovsky, G., Fulton, C. C., Ju, B. S., Stoute, N. A., Tao, S., Aspnes, D. E., & Luening, J. (2006, November). Suppression of Jahn-Teller term-split band edge states in the x-ray absorption spectra of non-crystalline Zr silicates and Si oxynitride alloys, and alloys of ZrO2 with Y2O3. RADIATION PHYSICS AND CHEMISTRY, Vol. 75, pp. 1591–1595. https://doi.org/10.1016/j.radphyschem.2006.05.004 Brinkley, M. K., Powell, G. D., & Aspnes, D. E. (2006). Systematic approach for analyzing reflectance-difference spectra: Application to silicon-dielectric interfaces. APPLIED PHYSICS LETTERS, 88(20). https://doi.org/10.1063/1.2204844 Kim, I. K., & Aspnes, D. E. (2006). Toward n kappa d spectroscopy: Analytic solution of the three-phase model of polarimetry in the thin-film limit. APPLIED PHYSICS LETTERS, 88(20). https://doi.org/10.1063/1.2203967 Lucovsky, G., Hong, J. G., Fulton, C. C., Stoute, N. A., Zou, Y., Nemanich, R. J., … Schlom, D. G. (2005). Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra. MICROELECTRONICS RELIABILITY, Vol. 45, pp. 827–830. https://doi.org/10.1016/j.microrel.2004.11.038 Choi, S. G., Palmstrom, C. J., Kim, Y. D., Cooper, S. L., & Aspnes, D. E. (2005). Dielectric functions of AlxGa1-xSb (0.00 <= x <= 0.39) alloys from 1.5 to 6.0 eV. JOURNAL OF APPLIED PHYSICS, 98(10). https://doi.org/10.1063/1.2134890 Peng, H. J., & Aspnes, D. E. (2005). Dipole-radiation model for terahertz radiation from semiconductors. APPLIED PHYSICS LETTERS, 86(21). https://doi.org/10.1063/1.1937992 Choi, S. G., Srivastava, S. K., Palmstrom, C. J., Kim, Y. D., Cooper, S. L., & Aspnes, D. E. (2005). Optical properties of (GaSb)(3n)(AlSb)(n) (1 <= n <= 5) superlattices. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 23, pp. 1149–1153. https://doi.org/10.1116/1.1881552 Aspnes, D. E. (2005). [Review of Real-time diagnostics for metalorganic vapor phase epitaxy]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 242(13), 2551–2560. https://doi.org/10.1002/pssb.200541109 Peng, H. J., Adles, E. J., Wang, J. F. T., & Aspnes, D. E. (2005). Relative bulk and interface contributions to optical second-harmonic generation in silicon. PHYSICAL REVIEW B, 72(20). https://doi.org/10.1103/physrevb.72.205203 Ebert, K., & Aspnes, D. E. (2004, May 1). Biplate artifacts in rotating-compensator ellipsometers. THIN SOLID FILMS, Vol. 455, pp. 779–783. https://doi.org/10.1016/j.tsf.2004.01.033 Aspnes, D. E., & Opsal, J. (2004). Broadband spectroscopic rotating compensator ellipsometer. Washington, DC: U.S. Patent and Trademark Office. Peng, H. J., & Aspnes, D. E. (2004). Calculation of bulk third-harmonic generation from crystalline Si with the simplified bond hyperpolarizability model. PHYSICAL REVIEW B, 70(16). https://doi.org/10.1103/physrevb.70.165312 Mori, T., & Aspnes, D. E. (2004, May 1). Comparison of the capabilities of rotating-analyzer and rotating-compensator ellipsometers by measurements on a single system. THIN SOLID FILMS, Vol. 455, pp. 33–38. https://doi.org/10.1016/j.tsf.2003.12.037 Aspnes, D. E. (2004, May 1). Expanding horizons: new developments in ellipsometry and polarimetry. THIN SOLID FILMS, Vol. 455, pp. 3–13. https://doi.org/10.1016/j.tsf.2003.12.038 Flock, K., Kim, S. J., Asar, M., Kim, I. K., & Aspnes, D. E. (2004, May 1). Integrated rotating-compensator polarimeter for real-time measurements and analysis of organometallic chemical vapor deposition. THIN SOLID FILMS, Vol. 455, pp. 639–644. https://doi.org/10.1016/j.tsf.2004.01.069 Asar, M., & Aspnes, D. E. (2004, May 1). Optical anisotropy relevant to rotating-compensator polarimeters: application to the monoplate retarder. THIN SOLID FILMS, Vol. 455, pp. 50–53. https://doi.org/10.1016/j.tsf.2003.12.044 Ihn, Y. S., Kim, T. J., Kim, Y. D., Aspnes, D. E., & Kossut, J. (2004). Optical properties of Cd1-xMgxTe (x=0.00, 0.23, 0.31, and 0.43) alloy films. APPLIED PHYSICS LETTERS, 84(5), 693–695. https://doi.org/10.1063/1.1639506 Aspnes, D. E. (2004). Optimizing precision of rotating-analyzer and rotating-compensator-ellipsometers. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA A-OPTICS IMAGE SCIENCE AND VISION, 21(3), 403–410. https://doi.org/10.1364/JOSAA.21.000403 Ihn, Y. S., Kim, T. J., Ghong, T. H., Kim, Y. D., Aspnes, D. E., & Kossut, J. (2004, May 1). Parametric modeling of the dielectric functions of Cd1-xMgxTe alloy films. THIN SOLID FILMS, Vol. 455, pp. 222–227. https://doi.org/10.1016/j.tsf.2004.01.015 Kim, S., Flock, K. L., Asar, M., Kim, I. K., & Aspnes, D. E. (2004). Real-time characterization of GaSb homo- and heteroepitaxy. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 22, pp. 2233–2239. https://doi.org/10.1116/1.1771669 Ghong, T. H., Kim, T. J., Kim, Y. D., & Aspnes, D. E. (2004). Spectroscopic ellipsometric analysis of interfaces: Comparison of alloy and effective-medium-approximation approaches to a CdMgTe multilayer system. APPLIED PHYSICS LETTERS, 85(6), 946–948. https://doi.org/10.1063/1.1779965 Hansen, J. K., Peng, H. J., & Aspnes, D. E. (2003). Application of the simplified bond-hyperpolarizability model to fourth-harmonic generation. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 21, pp. 1798–1803. https://doi.org/10.1116/1.1593057 Aspnes, D. E., & Opsal, J. (2003). Broadband spectroscopic rotating compensator ellipsometer. Washington, DC: U.S. Patent and Trademark Office. Ihn, Y. S., Kim, T. J., Kim, Y. D., Aspnes, D. E., & Kossut, J. (2003). Dielectric functions of Cd1-xMgxTe alloy films by uusing spectroscopic ellipsometry. Journal of the Korean Physical Society, 43(4), 634–637. Kim, T. J., Ghong, T. H., Kim, Y. D., Kim, S. J., Aspnes, D. E., Mori, T., … Koo, B. H. (2003). Dielectric functions of InxGa1-xAs alloys. PHYSICAL REVIEW B, 68(11). https://doi.org/10.1103/physrevb.68.115323 Ihn, Y. S., Ghong, T. H., Kim, Y. D., Kim, S. J., Aspnes, D. E., Yao, T., & Koo, B. H. (2003). Optical properties of InGaAs alloy films in the E-2 region by spectroscopic ellipsometry. Journal of the Korean Physical Society, 42(2003 Feb), S242–245. Aspnes, D. E., Hansen, J. K., Peng, H. J., Powell, G. D., & Wang, J. F. T. (2003, December). Simplified bond-hyperpolarizability model of second- and fourth-harmonic generation: application to Si-SiO2 interfaces. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol. 240, pp. 509–517. https://doi.org/10.1002/pssb.200303825 Ghong, T. H., Kim, T. J., Kim, Y. D., Kim, S. J., Aspnes, D. E., Choi, Y. D., & Yu, Y. M. (2003). Study of the dielectric function of ZnS by spectroscopic ellipsometry. Journal of the Korean Physical Society, 42(2003 Feb), S238–241. Aspnes, D. E., & Opsal, J. (2002). Broadband spectroscopic rotating compensator ellipsometer. Washington, DC: U.S. Patent and Trademark Office. Blickle, V., Flock, K., Dietz, N., & Aspnes, D. E. (2002). Pseudodielectric function of ZnGeP2 from 1.5 to 6 eV. APPLIED PHYSICS LETTERS, 81(4), 628–630. https://doi.org/10.1063/1.1492022 Kim, T. J., Ihn, Y. S., Kim, Y. D., Kim, S. J., Aspnes, D. E., Yao, T., … Koo, B. H. (2002). Pseudodielectric functions of InGaAs alloy films grown on InP. APPLIED PHYSICS LETTERS, 81(13), 2367–2369. https://doi.org/10.1063/1.1509093 Powell, G. D., Wang, J. F., & Aspnes, D. E. (2002). Simplified bond-hyperpolarizability model of second harmonic generation. PHYSICAL REVIEW B, 65(20). https://doi.org/10.1103/physrevb.65.205320 Wang, J. F. T., Powell, G. D., Johnson, R. S., Lucovsky, G., & Aspnes, D. E. (2002). Simplified bond-hyperpolarizability model of second harmonic generation: Application to Si-dielectric interfaces. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 20, pp. 1699–1705. https://doi.org/10.1116/1.1493783 Aspnes, D. E., Opsal, J., & Faton, J. T. (2002). Thin film optical measurement system and method with calibrating ellipsometer. Washington, DC: U.S. Patent and Trademark Office. Bang, C. Y., Lee, M. S., Kim, T. J., Kim, Y. D., Aspnes, D. E., Yu, Y. M., … Choi, Y. D. (2001). Above bandgap optical properties of ZnS and ZnS1-xTex alloys grown by using hot-wall epitaxy. Journal of the Korean Physical Society, 39(3), 462–465. Aspnes, D. E., & Opsal, J. (2001). Broadband spectroscopic rotating compensator ellipsometer. Washington, DC: U.S. Patent and Trademark Office. Yoo, S. D., & Aspnes, D. E. (2001). Elimination of endpoint-discontinuity artifacts in the analysis of spectra in reciprocal space. JOURNAL OF APPLIED PHYSICS, 89(12), 8183–8192. https://doi.org/10.1063/1.1368391 Aspnes, D. E., & Law, J. Y. (2001). Ellipsometer and polarimeter with zero-order plate compensator. Washington, DC: U.S. Patent and Trademark Office. Ebert, M., Bell, K. A., Flock, K., & Aspnes, D. E. (2001). Investigation and control of MOVPE growth by combined spectroscopic ellipsometry and reflectance-difference spectroscopy. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 184(1), 79–87. https://doi.org/10.1002/1521-396x(200103)184:1<79::aid-pssa79>3.0.co;2-b Ebert, M., & Aspnes, D. E. (2001). Investigation of noise in a spectrometer system using a short-arc source. REVIEW OF SCIENTIFIC INSTRUMENTS, 72(8), 3477–3479. https://doi.org/10.1063/1.1384423 Aspnes, D. E. (2001, December 16). Linear and nonlinear optical spectroscopy of surfaces and interfaces. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Vol. 188, pp. 1353–1360. https://doi.org/10.1002/1521-396x(200112)188:4<1353::aid-pssa1353>3.0.co;2-m Hyun, J., Aspnes, D. E., & Cuomo, J. J. (2001). Nondestructive measurement of a glass transition temperature at spin-cast semicrystalline polymer surfaces. MACROMOLECULES, 34(8), 2395–2397. https://doi.org/10.1021/ma0012797 Lindquist, O. P. A., Jarrendahl, K., Peters, S., Zettler, J. T., Cobet, C., Esser, N., … Edwards, N. V. (2001). Ordinary and extraordinary dielectric functions of 4H-and 6H-SiC from 3.5 to 9.0 eV. APPLIED PHYSICS LETTERS, 78(18), 2715–2717. https://doi.org/10.1063/1.1369617 Kim, T. J., Koo, M. S., Lee, M. S., Kim, Y. D., Aspnes, D. E., & Jonker, B. T. (2001). Spectroscopic ellipsometric study of the dielectric function of ZnSe and its overlayer. Journal of the Korean Physical Society, 39(2001 Dec), S372–375. Seong, G. Y., Bang, C. Y., Kim, Y. D., Wang, J., Aspnes, D. E., Koo, B. H., & Yao, T. (2001). Spectroscopic ellipsometry study of InGaAs alloy films grown on InP. Journal of the Korean Physical Society, 39(2001 Dec), S389–392. Aspnes, D. E., Opsal, J., & Faton, J. T. (2001). Thin film optical measurement system and method with calibrating ellipsometer. Washington, DC: U.S. Patent and Trademark Office. Aspnes, D. E., & Opsal, J. (2000). Broadband spectroscopic rotating compensator ellipsometer. Washington, DC: U.S. Patent and Trademark Office. Rossow, U., & Aspnes, D. E. (2000, January). Characterization of Al(x)Ga(1-x)N-compound layers by reflectance difference spectroscopy. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Vol. 177, pp. 157–163. https://doi.org/10.1002/(sici)1521-396x(200001)177:1<157::aid-pssa157>3.0.co;2-p Aspnes, D. E., Mantese, L., Bell, K. A., & Rossow, U. (2000, July). Coherence effects and time dependences of the optical response of surfaces and interfaces of optically absorbing materials. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol. 220, pp. 709–715. https://doi.org/10.1002/1521-3951(200007)220:1<709::aid-pssb709>3.0.co;2-d Lee, H., Kim, I. Y., Powell, J., Aspnes, D. E., Lee, S., Peiris, F., & Furdyna, J. K. (2000). Dielectric function and bowing parameter of Zn1-xMgxSe and Zn1-xBexSe alloys. JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 37(6), 1012–1016. https://doi.org/10.3938/jkps.37.1012 Koo, M. S., Kim, T. J., Lee, M. S., Oh, M. S., Kim, Y. D., Yoo, S. D., … Jonker, B. T. (2000). Dielectric function of epitaxial ZnSe films. APPLIED PHYSICS LETTERS, 77(21), 3364–3366. https://doi.org/10.1063/1.1328098 Hyun, J., Barletta, P., Koh, K., Yoo, S., Oh, J., Aspnes, D. E., & Cuomo, J. J. (2000). Effect of Ar+ ion beam in the process of plasma surface modification of PET films. JOURNAL OF APPLIED POLYMER SCIENCE, 77(8), 1679–1683. https://doi.org/10.1002/1097-4628(20000822)77:8<1679::AID-APP4>3.0.CO;2-F Yoo, S. D., Aspnes, D. E., Lastras-Martinez, L. F., Ruf, T., Konuma, M., & Cardona, M. (2000, July). High-resolution spectroscopy with reciprocal-space analysis: Application to isotopically pure Si. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol. 220, pp. 117–125. https://doi.org/10.1002/1521-3951(200007)220:1<117::aid-pssb117>3.0.co;2-4 Ebert, M., Bell, K. A., Yoo, S. D., Flock, K., & Aspnes, D. E. (2000, March 27). In situ monitoring of MOVPE growth by combined spectroscopic ellipsometry and reflectance-difference spectroscopy. THIN SOLID FILMS, Vol. 364, pp. 22–27. https://doi.org/10.1016/S0040-6090(99)00920-7 Lastras-Martinez, L. F., Ruf, T., Konuma, M., Cardona, M., & Aspnes, D. E. (2000). Isotopic effects on the dielectric response of Si around the E-1 gap. PHYSICAL REVIEW B, 61(19), 12946–12951. https://doi.org/10.1103/physrevb.61.12946 Aspnes, D. E., & Ebert, M. (2000). Method of reducing noise generated by arc lamps in optical systems employing slits. Washington, DC: U.S. Patent and Trademark Office. Edwards, N. V., Bremser, M. D., Batchelor, A. D., Buyanova, I. A., Madsen, L. D., Yoo, S. D., … Monemar, B. (2000, March 27). Optical characterization of wide bandgap semiconductors. THIN SOLID FILMS, Vol. 364, pp. 98–106. https://doi.org/10.1016/S0040-6090(99)00903-7 Choi, S. G., Kim, Y. D., Yoo, S. D., Aspnes, D. E., Woo, D. H., & Kim, S. H. (2000). Optical properties of AlxGa1-xP (0 <= x <= 0.52) alloys. JOURNAL OF APPLIED PHYSICS, 87(3), 1287–1290. https://doi.org/10.1063/1.372011 Edwards, N. V., Madsen, L. D., Robbie, K., Powell, G. D., Jarrendahl, K., Cobet, C., … Aspnes, D. E. (2000). Real-time assessment of overlayer removal on 4H-SiC surfaces: Techniques and relevance to contact formation. SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, Vol. 338-3, pp. 1033–1036. https://doi.org/10.4028/www.scientific.net/msf.338-342.1033 Edwards, N. V., Jarrendahl, K., Aspnes, D. E., Robbie, K., Powell, G. D., Cobet, C., … Madsen, L. D. (2000). Real-time assessment of selected surface preparation regimens for 4H-SiC surfaces using spectroscopic ellipsometry. SURFACE SCIENCE, 464(1), L703–L707. https://doi.org/10.1016/S0039-6028(00)00689-0 Bell, K. A., Ebert, M., Yoo, S. D., Flock, K., & Aspnes, D. E. (2000). Real-time optical characterization of heteroepitaxy by organometallic chemical vapor deposition. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 18, pp. 1184–1189. https://doi.org/10.1116/1.582323 Bell, K. A., Ebert, M., Yoo, S. D., Flock, K., & Aspnes, D. E. (2000, January). Real-time optical techniques and QMS to characterize growth in a modified commercial OMVPE reactor. JOURNAL OF ELECTRONIC MATERIALS, Vol. 29, pp. 106–111. https://doi.org/10.1007/s11664-000-0104-6 Rossow, U., Mantese, L., & Aspnes, D. E. (2000). Surface-induced optical anisotropy of Si and Ge. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 18, pp. 2229–2231. https://doi.org/10.1116/1.1306309 Lee, H., Kim, I. Y., Powell, J., Aspnes, D. E., Lee, S., Peiris, F., & Furdyna, J. K. (2000). Visible-near ultraviolet ellipsometric study of Zn1-xMgxSe and Zn1-xBexSe alloys. JOURNAL OF APPLIED PHYSICS, 88(2), 878–882. https://doi.org/10.1063/1.373750 Mantese, L., Xue, Q. K., Sakurai, T., & Aspnes, D. E. (1999). Analysis of high-index Si(001) surfaces by reflectance difference spectroscopy. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 17, pp. 1652–1656. https://doi.org/10.1116/1.581867 Aspnes, D. E., & Opsal, J. (1999). Broadband spectroscopic rotating compensator ellipsometer. Washington, DC: U.S. Patent and Trademark Office. Cardona, M., Lastras-Martinez, L. F., & Aspnes, D. E. (1999, November 8). Comment on "Ab initio calculation of excitonic effects in the optical spectra of semiconductors". PHYSICAL REVIEW LETTERS, Vol. 83, pp. 3970–3970. https://doi.org/10.1103/PhysRevLett.83.3970 Kim, T. J., Kim, Y. D., Yoo, S. D., Aspnes, D. E., & Kossut, J. (1999). Dielectric function of Cd0.57Mg0.43Te alloy film studied by ellipsometry. Journal of the Korean Physical Society, 34(1999 June), S496–498. Aspnes, D. E., & Yoo, S. D. (1999, September). High-resolution spectroscopy with reciprocal-space analysis. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, Vol. 215, pp. 715–723. https://doi.org/10.1002/(sici)1521-3951(199909)215:1<715::aid-pssb715>3.0.co;2-g Mantese, L., Bell, K. A., Aspnes, D. E., & Rossow, U. (1999). Photon-induced localization in optically absorbing materials. PHYSICS LETTERS A, 253(1-2), 93–97. https://doi.org/10.1016/S0375-9601(98)00953-0 Ayars, E., Aspnes, D. E., Moyer, P., & Paesler, M. A. (1999). Proximal electromagnetic shear forces. Journal of Microscopy, 196(1), 59–60. https://doi.org/10.1046/j.1365-2818.1999.00596.x Edwards, N. V., Batchelor, A. D., Buyanova, I. A., Madsen, L. D., Bremser, M. D., Davis, R. F., … Monemar, B. (1999). Relaxation phenomena in GaN/ AlN/ 6H-SiC heterostructures. MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.78). https://doi.org/10.1557/s1092578300002830 Aspnes, D. E., Opsal, J., & Faton, J. T. (1999). Thin film optical measurement system and method with calibrating ellipsometer. Washington, DC: U.S. Patent and Trademark Office. Yoo, S. D., Edwards, N. V., & Aspnes, D. E. (1998, February). Analysis of optical spectra by Fourier methods. THIN SOLID FILMS, Vol. 313, pp. 143–148. https://doi.org/10.1016/S0040-6090(97)00801-8 Leng, J., Opsal, J., Chu, H., Senko, M., & Aspnes, D. E. (1998). Analytic representations of the dielectric functions of crystalline and amorphous Si and crystalline Ge for very large scale integrated device and structural modeling. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, Vol. 16, pp. 1654–1657. https://doi.org/10.1116/1.581137 Leng, J., Opsal, J., Chu, H., Senko, M., & Aspnes, D. E. (1998, February). Analytic representations of the dielectric functions of materials for device and structural modeling. THIN SOLID FILMS, Vol. 313, pp. 132–136. https://doi.org/10.1016/S0040-6090(97)00799-2 Opsal, J., Fanton, J., Chen, J., Leng, J., Wei, L., Uhrich, C., … Aspnes, D. E. (1998, February). Broadband spectral operation of a rotating-compensator ellipsometer. THIN SOLID FILMS, Vol. 313, pp. 58–61. https://doi.org/10.1016/S0040-6090(97)00769-4 Mantese, L., Bell, K. A., Rossow, U., & Aspnes, D. E. (1998, February). Interpretation of critical point energy shifts in crystalline Si by near-surface localization of excited electronic states. THIN SOLID FILMS, Vol. 313, pp. 557–560. https://doi.org/10.1016/S0040-6090(97)00883-3 Rossow, U., Mantese, L., & Aspnes, D. E. (1998, January). Lineshapes of surface induced optical anisotropy spectra measured by RDS/RAS. APPLIED SURFACE SCIENCE, Vol. 123, pp. 237–242. https://doi.org/10.1016/S0169-4332(97)00544-8 Aspnes, D. E., Mantese, L., Bell, K. A., & Rossow, U. (1998). Many-body and correlation effects in surface and interface spectra of optically absorbing materials. Physica Status Solidi. A, Applications and Materials Science, 170(2), 199–210. Aspnes, D. E., & Dietz, N. (1998, June). Optical approaches for controlling epitaxial growth. APPLIED SURFACE SCIENCE, Vol. 130, pp. 367–376. https://doi.org/10.1016/s0169-4332(98)00085-3 Woo, D. H., Han, I. K., Choi, W. J., Lee, S., Kim, H. J., Lee, J. I., … Woo, J. C. (1998, August). Optical characterization of GaAs/AlAs short period superlattices. MICROELECTRONIC ENGINEERING, Vol. 43-4, pp. 265–270. https://doi.org/10.1016/S0167-9317(98)00173-7 Aspnes, D. E., Mantese, L., Bell, K. A., & Rossow, U. (1998). Photon-induced localization and final-state correlation effects in optically absorbing materials. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 16, pp. 2367–2372. https://doi.org/10.1116/1.590176 Rossow, U., Lindner, K., Lubbe, M., Aspnes, D. E., & Zahn, D. R. T. (1998). Reflectance difference spectroscopy spectra of clean (3 x 2), (2 x 1), and c(2 x 2) 3C-SiC(001) surfaces: New evidence for surface state contributions to optical anisotropy spectra. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 16, pp. 2355–2357. https://doi.org/10.1116/1.590174 Edwards, N. V., Yoo, S. D., Bremser, M. D., Horton, M. N., Perkins, N. R., Weeks, T. W., … Aspnes, D. E. (1998, February). Spectroscopic ellipsometry and low-temperature reflectance: complementary analysis of GaN thin films. THIN SOLID FILMS, Vol. 313, pp. 187–192. https://doi.org/10.1016/S0040-6090(97)00815-8 Bell, K. A., Mantese, L., Rossow, U., & Aspnes, D. E. (1998, February). Systematic differences among nominal reference dielectric function spectra for crystalline Si as determined by spectroscopic ellipsometry. THIN SOLID FILMS, Vol. 313, pp. 161–166. https://doi.org/10.1016/S0040-6090(97)00804-3 Aspnes, D. E., Opsal, J., & Faton, J. T. (1998). Thin film optical measurement system and method with calibrating ellipsometer. Washington, DC: U.S. Patent and Trademark Office. Edwards, N. V., Bremser, M. D., Davis, R. F., Batchelor, A. D., Yoo, S. D., Karan, C. F., & Aspnes, D. E. (1998). Trends in residual stress for GaN/AlN/6H-SiC heterostructures. APPLIED PHYSICS LETTERS, 73(19), 2808–2810. https://doi.org/10.1063/1.122597 Kim, Y. D., Ko, Y. D., Choi, S. G., Yoo, S. D., Aspnes, D. E., & Jonker, B. T. (1997). Above bandgap dielectric function of epitaxial ZnSe layers. Journal of the Korean Physical Society, 31(4), L553–555. Choi, S. G., Kim, Y. D., Yoo, S., Duk, A., Miotkowski, D. E., I., & Ramdas, A. K. (1997). Ellipsometric studies of Cd1-xMgxTe (0<=x<=0.5) alloys. APPLIED PHYSICS LETTERS, 71(2), 249–251. https://doi.org/10.1063/1.119511 Mantese, L., Bell, K. A., Rossow, U., & Aspnes, D. E. (1997). Evidence of near-surface localization of excited electronic states in crystalline Si. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 15, pp. 1196–1200. https://doi.org/10.1116/1.589438 Bremser, M. D., Perry, W. G., Zheleva, T., Edwards, N. V., Nam, O. H., Parikh, N., … Davis, R. F. (1997, March). Growth, doping and characterization of AlxGa1-xN thin film alloys on 6H-SiC(0001) substrates. DIAMOND AND RELATED MATERIALS, Vol. 6, pp. 196–201. https://doi.org/10.1016/S0925-9635(96)00626-7 Rossow, U., Edwards, N. V., Bremser, M. D., Kern, R. S., Liu, H., Davis, R. F., & Aspnes, D. E. (1997). In-plane optical anisotropies of Al(x)Ga(1-x)N films in their regions of transparency. III-V nitrides: symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society symposia proceedings ; v. 449), 835–840. https://doi.org/10.1557/proc-449-835 Hinds, B. J., Aspenes, D. E., & Lucovsky, G. (1997). Low pH chemical etch route for smooth H-terminated Si(100) and study of subsequent chemical stability. Environmental, safety, and health issues in IC production: Symposium held December 4-5, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society Symposium proceedings, no. 447), 191–196. Pittsburgh, PA: Materials Research Society. Bachmann, K. J., Hopfner, C., Sukidi, N., Miller, A. E., Harris, C. J., Aspnes, D. E., … Banks, H. T. (1997). Molecular layer epitaxy by real-time optical process monitoring. Applied Surface Science, 112(1997 Mar.), 38–47. https://doi.org/10.1016/S0169-4332(96)00975-0 Aspnes, D. E., Dietz, N., Rossow, U., & Bachmann, K. J. (1997). Multilevel approaches toward monitoring and control of semiconductor epitaxy. Control of semiconductor surfaces and interfaces: Symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society Symposium proceedings, no. 448), 451–462. https://doi.org/10.1557/proc-448-451 Aspnes, D. E. (1997). Real-time optical analysis and control of semiconductor epitaxy: Progress and opportunity. SOLID STATE COMMUNICATIONS, 101(2), 85–92. https://doi.org/10.1016/S0038-1098(96)00447-4 Edwards, N. V., Yoo, S. D., Bremser, M. D., Zheleva, T., Horton, M. N., Perkins, N. R., … Aspnes, D. E. (1997). Spectral analysis of above-, below-, and near-bandedge phenomena in GaN thin films. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 50(1-3), 134–141. https://doi.org/10.1016/s0921-5107(97)00151-7 Kim, Y. D., Choi, S. G., Klein, M. V., Yoo, S. D., Aspnes, D. E., Xin, S. H., & Furdyna, J. K. (1997). Spectroscopic ellipsometric characterization of undoped ZnTe films grown on GaAs. APPLIED PHYSICS LETTERS, 70(5), 610–612. https://doi.org/10.1063/1.118289 Choi, S. G., Kim, Y. D., Klein, M. V., Yoo, S. D., Aspnes, D. E., Xin, S. H., & Furdyna, J. K. (1997). Spectroscopic ellipsometric study of Zn(1-x)Mn(x)Te films grown on GaAs. Journal of the Korean Physical Society, 31(1), 202–205. Choi, S. G., Kim, Y. D., Yoo, S. D., Aspnes, D. E., Rhee, S. J., Woo, J. C., … Kang, K. N. (1997). Spectroscopic ellipsometry study of GaAs/AlAs superlattices and Al(0.5)Ga(0.5)As alloy. Journal of the Korean Physical Society, 30(suppl.), 108–112. Bell, K. A., Mantese, L., Rossow, U., & Aspnes, D. E. (1997). Surface and interface effects on ellipsometric spectra of crystalline Si. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 15, pp. 1205–1211. https://doi.org/10.1116/1.589440 Edwards, N. V., Yoo, S. D., Bremser, M. D., Weeks, T. W., Nam, O. H., Davis, R. F., … Aspnes, D. E. (1997). Variation of GaN valence bands with biaxial stress and quantification of residual stress. APPLIED PHYSICS LETTERS, 70(15), 2001–2003. https://doi.org/10.1063/1.119089 Edwards, N. V., Yoo, S. D., Bremser, M. D., Horton, M. N., Perkins, N. R., Weeks, T. W., … Aspnes, D. E. (1997). Variation of GaN valence bands with biaxial stress: quantification of residual stress and impact on fundamental band parameters. III-V nitrides: symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society symposia proceedings ; v. 449), 781–786. https://doi.org/10.1557/proc-449-781 Aspnes, D. E. (1994). Extraction of spatially varying dielectric function from ellipsometric data. Washington, DC: U.S. Patent and Trademark Office. Aspnes, D. E. (1993). Minimal-data approaches for determining outer-layer dielectric responses of films from kinetic reflectometric and ellipsometric measurements. Journal of the Optical Society of America A, 10(5), 974. https://doi.org/10.1364/josaa.10.000974 Aspnes, D. E., & Quinn, D. E. (1992). Ellipsometric control of material growth. Washington, DC: U.S. Patent and Trademark Office. Aspnes, D. E., Quinn, W. E., Tamargo, M. C., Pudensi, M. A. A., Schwarz, S. A., Brasil, M. J. S. P., … Gregory, S. (1992). Growth of AlxGa1−xAs parabolic quantum wells by real‐time feedback control of composition. Applied Physics Letters, 60(10), 1244–1246. https://doi.org/10.1063/1.107419 Aspnes, D. E., Bhat, R., Colas, E. G., Florez, L. T., Harbison, J. P., & Studna, A. A. (1990). Optical control of deposition of crystal monolayers. Washington, DC: U.S. Patent and Trademark Office. Aspnes, D. E. (1985). Cylindrical grating monochromator for synchrotron radiation. Washington, DC: U.S. Patent and Trademark Office. Aspnes, D. E., & Studna, A. A. (1983). Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV. Physical Review B, 27(2), 985–1009. https://doi.org/10.1103/physrevb.27.985 Aspnes, D. E., & Studna, A. A. (1983). Method of preparing semiconductor surfaces. Washington, DC: U.S. Patent and Trademark Office. Aspnes, D. E. (1982). Local‐field effects and effective‐medium theory: A microscopic perspective. American Journal of Physics, 50(8), 704–709. https://doi.org/10.1119/1.12734 Aspnes, D. E. (1982). Method for optical monitoring in materials fabrication. Washington, DC: U.S. Patent and Trademark Office. Adams, A. C., Aspnes, D. E., & Bagley, B. G. (1982). Method for producing devices comprising high density amorphous silicon or germanium layers by low pressure CVD technique. Washington, DC: U.S. Patent and Trademark Office. Aspnes, D. E. (1982). Optical properties of thin films. Thin Solid Films, 89(3), 249–262. https://doi.org/10.1016/0040-6090(82)90590-9 Aspnes, D. E. (1976). Measurement of thin films by polarized light. Washington, DC: U.S. Patent and Trademark Office. Aspnes, D. E., & Studna, A. A. (1975). High Precision Scanning Ellipsometer. Applied Optics, 14(1), 220. https://doi.org/10.1364/ao.14.000220 Aspnes, D. E. (1966). Electric-Field Effects on Optical Absorption near Thresholds in Solids. Physical Review, 147(2), 554–566. https://doi.org/10.1103/physrev.147.554