@article{xue_palmese_sekely_little_kish_muth_wierer_2024, title={Growth and characterization of AlInN/GaN superlattices}, volume={630}, ISSN={["1873-5002"]}, url={https://doi.org/10.1016/j.jcrysgro.2024.127567}, DOI={10.1016/j.jcrysgro.2024.127567}, abstractNote={Data are presented on near-lattice-matched Al1-xInxN/GaN superlattices (SLs) with superior morphology to thick AlInN layers. The SLs are grown by metalorganic chemical vapor deposition and consist of ∼ 3 nm thick AlInN, ∼1 nm thick GaN layers, and x=0.153 to 0.203. The SLs are grown with either 20 or 100 periods on GaN-on-sapphire or free-standing GaN substrates. Growth conditions are explored, and the In-content of the AlInN layers within the SL increases with growth temperature and pressure, while the growth rate decreases with pressure. Thick AlInN layers grown on GaN-on-sapphire exhibit island growth with a root mean square (rms) roughness of ∼ 0.65 nm, while the AlInN/GaN SLs have steplike morphology and rms ∼ 0.3 nm. Also, 80 nm thick AlInN/GaN SLs grown on GaN substrates exhibit nearly perfect steplike morphology with a lower rms of ∼ 0.13 nm and extremely low pit densities. The refractive index of the SLs is the weighted average of AlInN and GaN, and they emit light from the quantum states within the thin GaN layers. These AlInN/GaN SLs are a potential replacement for AlInN layers in optoelectronic and electronic devices that require steplike morphology and controlled pitting.}, journal={JOURNAL OF CRYSTAL GROWTH}, author={Xue, Haotian and Palmese, Elia and Sekely, Ben J. and Little, Brian D. and Kish, Fred A. and Muth, John F. and Wierer, Jonathan J.}, year={2024}, month={Mar} }
 @article{sengupta_little_mita_markham_dycus_stein_wu_sitar_kish_pavlidis_2024, title={Wafer-bonded In<sub>0.53</sub>Ga<sub>0.47</sub>As/GaN p-n diodes with near-unity ideality factor}, volume={125}, ISSN={["1077-3118"]}, DOI={10.1063/5.0194526}, abstractNote={III–V/III-nitride p–n junctions were realized via crystal heterogeneous integration, and the resulting diodes were characterized to analyze electrical behavior and junction quality. p-type In0.53Ga0.47As, which is a well-established base layer in InP heterojunction bipolar transistor (HBT) technology, was used in combination with a homoepitaxial n-type GaN. The latter offers low dislocation density, coupled with high critical electric field and saturation velocity, which are attractive for use in future HBT collector layers. Transmission electron microscopy confirms an abrupt interface in the fabricated heterogeneous diodes. Electrical characterization of the diodes reveals a near-unity ideality factor (n ∼ 1.07) up to 145 °C, a high rectification ratio of ∼108, and a low interface trap density of 3.7 × 1012 cm−2.}, number={6}, journal={APPLIED PHYSICS LETTERS}, author={Sengupta, Rohan and Little, Brian and Mita, Seiji and Markham, Keith and Dycus, J. Houston and Stein, Shane and Wu, Barry and Sitar, Zlatko and Kish, Fred and Pavlidis, Spyridon}, year={2024}, month={Aug} }