Salah M Bedair

Abdelhamid, M., Routh, E. L., Hagar, B., & Bedair, S. M. (2022). Improved LED output power and external quantum efficiency using InGaN templates. APPLIED PHYSICS LETTERS, 120(8). https://doi.org/10.1063/5.0084273

Hagar, B. G., Abdelhamid, M., Routh, E. L., Colter, P. C., & Bedair, S. M. (2022). Ohmic co-doped GaN/InGaN tunneling diode grown by MOCVD. APPLIED PHYSICS LETTERS, 121(5). https://doi.org/10.1063/5.0103152

Routh, E. L., Abdelhamid, M., Colter, P., El-Masry, N. A., & Bedair, S. M. (2021). P-type InxGa1-xN semibulk templates (0.02 < x < 0.16) with room temperature hole concentration of mid-10(19) cm(-3) and device quality surface morphology. APPLIED PHYSICS LETTERS, 119(12). https://doi.org/10.1063/5.0065194

Abdelhamid, M., Routh, E. L., Shaker, A., & Bedair, S. M. (2021). Shifting LED emission from blue to the green gap spectral range using In0.12Ga0.88N relaxed templates. SUPERLATTICES AND MICROSTRUCTURES, 160. https://doi.org/10.1016/j.spmi.2021.107065

Abdelhamid, M., Routh, E. L., & Bedair, S. M. (2021). The dependence of the emission from MQWs on the indium content in the underlying InGaN templates: experimental and modeling results. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 36(3). https://doi.org/10.1088/1361-6641/abe141

Khafagy, K. H., Hatem, T. M., & Bedair, S. M. (2021). Thermodynamics Models for V-pit Nucleation and Growth in III-Nitride on Silicon. JOM, 73(1), 293–298. https://doi.org/10.1007/s11837-020-04421-z

Routh, E. L., Abdelhamid, M., El-Masry, N. A., & Bedair, S. M. (2020). Device quality templates of InxGa1-xN (x < 0.1) with defect densities comparable to GaN. APPLIED PHYSICS LETTERS, 117(5). https://doi.org/10.1063/5.0015419

Khafagy, K. H., Hatem, T. M., & Bedair, S. M. (2020). Dislocation-Based Thermodynamic Models of V-Pits Formation and Strain Relaxation in InGaN/GaN Epilayers on Si Substrates. TMS 2020 149TH ANNUAL MEETING & EXHIBITION SUPPLEMENTAL PROCEEDINGS, pp. 2057–2064. https://doi.org/10.1007/978-3-030-36296-6_188

Hagar, B., Sayed, I., Colter, P. C., & Bedair, S. M. (2020). Multi-junction solar cells by Intermetallic Bonding and interconnect of Dissimilar Materials: GaAs/Si. SOLAR ENERGY MATERIALS AND SOLAR CELLS, 215. https://doi.org/10.1016/j.solmat.2020.110653

Eldred, T. B., Abdelhamid, M., Reynolds, J. G., El-Masry, N. A., LeBeau, J. M., & Bedair, S. M. (2020). Observing relaxation in device quality InGaN templates by TEM techniques. APPLIED PHYSICS LETTERS, 116(10). https://doi.org/10.1063/1.5139269

Salah, S. I., Hatem, T. M., Khalil, E. E., & Bedair, S. M. (2019). Embedded void approach effects on intrinsic stresses in laterally grown GaN-on-Si substrate. MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 242, 104–110. https://doi.org/10.1016/j.mseb.2019.02.016

Abdelhamid, M., Reynolds, J. G., El-Masry, N. A., & Bedair, S. M. (2019). Growth and characterization of InxGa1-xN (0 < x < 0.16) templates for controlled emissions from MQW. JOURNAL OF CRYSTAL GROWTH, 520, 18–26. https://doi.org/10.1016/j.jcrysgro.2019.05.019

Khafagy, K. H., Hatem, T. M., & Bedair, S. M. (2019). Modelling of III-Nitride Epitaxial Layers Grown on Silicon Substrates with Low Dislocation-Densities. MRS ADVANCES, 4(13), 755–760. https://doi.org/10.1557/adv.2019.49

Sayed, I., & Bedair, S. M. (2019). Quantum Well Solar Cells: Principles, Recent Progress, and Potential. IEEE JOURNAL OF PHOTOVOLTAICS, 9(2), 402–423. https://doi.org/10.1109/JPHOTOV.2019.2892079

Khafagy, K. H., Hatem, T. M., & Bedair, S. M. (2018). Impact of embedded voids on thin-films with high thermal expansion coefficients mismatch. APPLIED PHYSICS LETTERS, 112(4). https://doi.org/10.1063/1.5011394

Khafagy, K. H., Hatem, T. M., & Bedair, S. M. (2018). Three-Dimensional Crystal-Plasticity Based Model for Intrinsic Stresses in Multi-junction Photovoltaic. ENERGY TECHNOLOGY 2018: CARBON DIOXIDE MANAGEMENT AND OTHER TECHNOLOGIES, pp. 453–461. https://doi.org/10.1007/978-3-319-72362-4_41

Colter, P., Hagar, B., & Bedair, S. (2018). [Review of Tunnel Junctions for III-V Multijunction Solar Cells Review]. CRYSTALS, 8(12). https://doi.org/10.3390/cryst8120445

Sayed, I. E. H., Jain, N., Steiner, M. A., Geisz, J. F., & Bedair, S. M. (2017). 100-period InGaAsP/InGaP superlattice solar cell with sub-bandgap quantum efficiency approaching 80%. APPLIED PHYSICS LETTERS, 111(8). https://doi.org/10.1063/1.4993888

El-Masry, N. A., Zavada, J. M., Reynolds, J. G., Reynolds, C. L., Jr., Liu, Z., & Bedair, S. M. (2017). Electric field control of ferromagnetism at room temperature in GaCrN (p-i-n) device structures. Applied Physics Letters, 111(8), 082402. https://doi.org/10.1063/1.4986431

Bedair, S. M., Harmon, J. L., Carlin, C. Z., Sayed, I. E. H., & Colter, P. C. (2016). Annealed high band gap tunnel junctions with peak current densities above 800 A/cm(2). 2016 ieee 43rd photovoltaic specialists conference (pvsc), 2320–2322. https://doi.org/10.1109/pvsc.2016.7750052

Sayed, I. E. H., Hagar, B. G., Carlin, C. Z., Colter, P. C., & Bedair, S. M. (2016). Extending the absorption threshold of InGaP solar cells to 1.60 eV using quantum wells: experimental and modeling results. 2016 ieee 43rd photovoltaic specialists conference (pvsc), 2366–2370. https://doi.org/10.1109/pvsc.2016.7750063

Bedair, S. M., Carlin, C. Z., Harmon, J. L., Sayed, I. E. H., & Colter, P. C. (2016). High Performance Tunnel Junction with Resistance to Thermal Annealing. 12TH INTERNATIONAL CONFERENCE ON CONCENTRATOR PHOTOVOLTAIC SYSTEMS (CPV-12), Vol. 1766. https://doi.org/10.1063/1.4962071

Bedair, S. M., Harmon, J. L., Carlin, C. Z., Sayed, I. E. H., & Colter, P. C. (2016). High performance as-grown and annealed high band gap tunnel junctions: Te behavior at the interface. APPLIED PHYSICS LETTERS, 108(20). https://doi.org/10.1063/1.4951690

Sayed, I. E. H., Hagar, B. G., Carlin, C. Z., Colter, P. C., & Bedair, S. M. (2016). InGaP-based quantum well solar cells. 2016 ieee 43rd photovoltaic specialists conference (pvsc), 147–150. https://doi.org/10.1109/pvsc.2016.7749566

Hashem, I. E., Carlin, C. Z., Hagar, B. G., Colter, P. C., & Bedair, S. M. (2016). InGaP-based quantum well solar cells: Growth, structural design, and photovoltaic properties. JOURNAL OF APPLIED PHYSICS, 119(9). https://doi.org/10.1063/1.4943366

Sayed, I. E. H., Carlin, C. Z., Hagar, B. G., Colter, P. C., & Bedair, S. M. (2016). Strain-Balanced InGaAsP/GaInP Multiple Quantum Well Solar Cells With a Tunable Bandgap (1.65-1.82 eV). IEEE JOURNAL OF PHOTOVOLTAICS, 6(4), 997–1003. https://doi.org/10.1109/jphotov.2016.2549745

Van Den Broeck, D. M., Bharrat, D., Liu, Z., El-Masry, N. A., & Bedair, S. M. (2015). Growth and Characterization of High-Quality, Relaxed In (y) Ga1-y N Templates for Optoelectronic Applications. JOURNAL OF ELECTRONIC MATERIALS, 44(11), 4161–4166. https://doi.org/10.1007/s11664-015-3989-9

Sayed, I. E. H., Carlin, C. Z., Hagar, B., Colter, P. C., & Bedair, S. M. (2015). Tunable GaInP solar cell lattice matched to GaAs. 2015 ieee 42nd photovoltaic specialist conference (pvsc). https://doi.org/10.1109/pvsc.2015.7356081

Bradshaw, G. K., Samberg, J. P., Carlin, C. Z., Colter, P. C., Edmondson, K. M., Hong, W., … Bedair, S. M. (2014). GaInP/GaAs Tandem Solar Cells With InGaAs/GaAsP Multiple Quantum Wells. IEEE JOURNAL OF PHOTOVOLTAICS, 4(2), 614–619. https://doi.org/10.1109/jphotov.2013.2294750

Bain, L. E., Hosalli, A. M., Bedair, S. M., Paskova, T., & Ivanisevic, A. (2014). Molecular Interactions on InxGa1−xN. In G. Shaw III, B. Prorok, L. Starman, & C. Furlong (Eds.), MEMS and Nanotechnology (pp. 109–114). https://doi.org/10.1007/978-3-319-00780-9_14

Broeck, D. M., Bharrat, D., Hosalli, A. M., El-Masry, N. A., & Bedair, S. M. (2014). Strain-balanced InGaN/GaN multiple quantum wells. APPLIED PHYSICS LETTERS, 105(3). https://doi.org/10.1063/1.4890738

Bain, L. E., Jewett, S. A., Mukund, A. H., Bedair, S. M., Paskova, T. M., & Ivanisevic, A. (2013). Biomolecular Gradients via Semiconductor Gradients: Characterization of Amino Acid Adsorption to InxGa1–xN Surfaces. ACS Applied Materials & Interfaces, 5(15), 7236–7243. https://doi.org/10.1021/AM4015555

Bradshaw, G. K., Carlin, C. Z., Samberg, J. P., El-Masry, N. A., Colter, P. C., & Bedair, S. M. (2013). Carrier Transport and Improved Collection in Thin-Barrier InGaAs/GaAsP Strained Quantum Well Solar Cells. IEEE JOURNAL OF PHOTOVOLTAICS, 3(1), 278–283. https://doi.org/10.1109/jphotov.2012.2216858

Bradshaw, G. K., Carlin, C. Z., Samberg, J. P., Colter, P. C., & Bedair, S. M. (2013). Determination of carrier recombination lifetime in InGaAs quantum wells from external quantum efficiency measurements. 2013 ieee 39th photovoltaic specialists conference (pvsc), 264–267. https://doi.org/10.1109/pvsc.2013.6744143

Samberg, J. P., Carlin, C. Z., Bradshaw, G. K., Colter, P. C., Harmon, J. L., Allen, J. B., … Bedair, S. M. (2013). Effect of GaAs interfacial layer on the performance of high bandgap tunnel junctions for multijunction solar cells. APPLIED PHYSICS LETTERS, 103(10). https://doi.org/10.1063/1.4819917

Bharrat, D., Hosalli, A. M., Van Den Broeck, D. M., Samberg, J. P., Bedair, S. M., & El-Masry, N. A. (2013). Gallium nitride nanowires by maskless hot phosphoric wet etching. APPLIED PHYSICS LETTERS, 103(8). https://doi.org/10.1063/1.4819272

Samberg, J. P., Carlin, C. Z., Bradshaw, G. K., Colter, P. C., & Bedair, S. M. (2013). Growth and Characterization of InxGa1-xAs/GaAs1-yPy Strained-Layer Superlattices with High Values of y (similar to 80%). JOURNAL OF ELECTRONIC MATERIALS, 42(5), 912–917. https://doi.org/10.1007/s11664-012-2375-0

Samberg, J. P., Alipour, H. M., Bradshaw, G. K., Carlin, C. Z., Colter, P. C., LeBeau, J. M., … Bedair, S. M. (2013). Interface properties of Ga(As,P)/(In,Ga)As strained multiple quantum well structures. APPLIED PHYSICS LETTERS, 103(7). https://doi.org/10.1063/1.4818548

Hosalli, A. M., Van Den Broeck, D. M., Bharrat, D., El-Masry, N. A., & Bedair, S. M. (2013). Inversion by metalorganic chemical vapor deposition from N- to Ga-polar gallium nitride and its application to multiple quantum well light-emitting diodes. Applied Physics Letters, 103(23), 231108. https://doi.org/10.1063/1.4841755

Carlin, C. Z., Bradshaw, G. K., Samberg, J. P., Colter, P. C., & Bedair, S. M. (2013). Minority Carrier Transport and Their Lifetime in InGaAs/GaAsP Multiple Quantum Well Structures. IEEE TRANSACTIONS ON ELECTRON DEVICES, 60(8), 2532–2536. https://doi.org/10.1109/ted.2013.2268421

Hauser, J., Carlin, Z., Harmon, J., Bradshaw, G., Samberg, J., Colter, P., & Bedair, S. (2013). Modeling an InGaP/AlGaAs tunnel junction containing an AlAs diffusion barrier. 2013 ieee 39th photovoltaic specialists conference (pvsc), 2082–2085. https://doi.org/10.1109/pvsc.2013.6744883

Frajtag, P., Nepal, N., Paskova, T., Bedair, S. M., & El-Masry, N. A. (2013). Multifacet semipolar formation by controlling the groove depth via lateral sidewall epitaxy. JOURNAL OF CRYSTAL GROWTH, 367, 88–93. https://doi.org/10.1016/j.jcrysgro.2012.12.039

Roberts, A. T., Mohanta, A., Everitt, H. O., Leach, J. H., Broeck, D., Hosalli, A. M., … Bedair, S. M. (2013). Spectroscopic investigation of coupling among asymmetric InGaN/GaN multiple quantum wells grown on non-polar a-plane GaN substrates. APPLIED PHYSICS LETTERS, 103(18). https://doi.org/10.1063/1.4827536

Samberg, J. P., Bradshaw, G. K., Carlin, C. Z., Colter, P. C., Edmondson, K., Hong, W., … Bedair, S. M. (2013). Tandem InGaP/GaAs-quantum well solar cells and their potential improvement through phosphorus carry-over management in multiple quantum well structures. 2013 ieee 39th photovoltaic specialists conference (pvsc), 1737–1740. https://doi.org/10.1109/pvsc.2013.6744479

Frajtag, P., Hosalli, A. M., Samberg, J. P., Colter, P. C., Paskova, T., El-Masry, N. A., & Bedair, S. M. (2012, August 1). Overgrowth of GaN on GaN nanowires produced by mask-less etching. JOURNAL OF CRYSTAL GROWTH, Vol. 352, pp. 203–208. https://doi.org/10.1016/j.jcrysgro.2011.12.055

Liliental-Weber, Z., Yu, K. M., Zakharov, D., & Bedair, S. (2012). Planar defects in thin films of InGaN. Microscopy and Microanalysis, 18(S2), 1486–1487. https://doi.org/10.1017/S1431927612009282

Frajtag, P., El-Masry, N. A., Nepal, N., & Bedair, S. M. (2011). Embedded voids approach for low defect density in epitaxial GaN films. APPLIED PHYSICS LETTERS, 98(2). https://doi.org/10.1063/1.3540680

Frajtag, P., Samberg, J. P., El-Masry, N. A., Nepal, N., & Bedair, S. M. (2011). Embedded voids formation by overgrowth on GaN nanowires for high-quality GaN films. JOURNAL OF CRYSTAL GROWTH, 322(1), 27–32. https://doi.org/10.1016/j.jcrysgro.2011.02.032

Frajtag, P., Hosalli, A. M., Bradshaw, G. K., Nepal, N., El-Masry, N. A., & Bedair, S. M. (2011). Improved light-emitting diode performance by conformal overgrowth of multiple quantum wells and fully coalesced p-type GaN on GaN nanowires. Applied Physics Letters, 98(14), 143104. https://doi.org/10.1063/1.3572032

Nepal, N., Frajtag, P., Zavada, J. M., El-Masry, N. A., Bedair, S. M., Wetzel, C., & Khan, A. (2011). Light emitting diodes based on sidewall m-plane epitaxy of etched GaN/sapphire templates. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, Vol. 8. https://doi.org/10.1002/pssc.201000983

Colter, P. C., Carlin, C. Z., Samberg, J. P., Bradshaw, G. K., & Bedair, S. M. (2011). Staggered InGaAs/GaAsP strained layer superlattices for use in optical devices. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 208(12), 2884–2888. https://doi.org/10.1002/pssa.201026624

Emar, A. M., Berkman, E. A., Zavada, J., El-Masry, N. A., & Bedair, S. M. (2011). Strain relaxation in InxGa1-xN/GaN quantum well structures. Physica Status Solidi (c), 8(7-8), 2034–2037. https://doi.org/10.1002/pssc.201000984

Liliental-Weber, Z., Ogletree, D. F., Yu, K. M., Hawkridge, M., Domagala, J. Z., Bak-Misiuk, J., … Bedair, S. (2011). Structural defects and cathodoluminescence of InxGa1-xN layers. Physica Status Solidi (c), 8(7-8), 2248–2250. https://doi.org/10.1002/pssc.201001087

Luen, M. O., Nepal, N., Frajtag, P., Zavada, J. M., Brown, E., Hommerich, U., … El Masry, N. A. (2010). Ferromagnetism and near infrared luminescence in neodymium and erbium doped gallium nitride via diffusion. Novel materials and devices for spintronics, 1183, 45–50. https://doi.org/10.1557/proc-1183-ff06-01

Hauser, J. R., Carlin, Z., & Bedair, S. M. (2010). Modeling of tunnel junctions for high efficiency solar cells. APPLIED PHYSICS LETTERS, 97(4). https://doi.org/10.1063/1.3469942

Nepal, N., Luen, M. O., Zavada, J. M., Bedair, S. M., Frajtag, P., & El-Masry, N. A. (2009). Electric field control of room temperature ferromagnetism in III-N dilute magnetic semiconductor films. APPLIED PHYSICS LETTERS, 94(13). https://doi.org/10.1063/1.3110963

Liliental-Weber, Z., Yu, K. M., Hawkridge, M., Bedair, S., Berman, A. E., Emara, A., … Bak-Misiuk, J. (2009). Spontaneous stratification of InGaN layers and its influence on optical properties. Physica Status Solidi (c), 6(S2), S433–S436. https://doi.org/10.1002/pssc.200880985

Liliental-Weber, Z., Yu, K. M., Hawkridge, M., Bedair, S., Berman, A. E., Emara, A., … Bak-Misiuk, J. (2009). Structural perfection of InGaN layers and its relation to photoluminescence. Physica Status Solidi (c), 6(12), 2626–2631. https://doi.org/10.1002/pssc.200982555

Berkman, E. A., El-Masry, N. A., Emara, A., & Bedair, S. M. (2008). Nearly lattice-matched n, i, and p layers for InGaN p-i-n photodiodes in the 365-500 nm spectral range. APPLIED PHYSICS LETTERS, 92(10). https://doi.org/10.1063/1.2896648

Nepal, N., Bedair, S. M., El-Masry, N. A., Lee, D. S., Steckl, A. J., & Zavada, J. M. (2007). Correlation between compositional fluctuation and magnetic properties of Tm-doped AlGaN alloys. APPLIED PHYSICS LETTERS, 91(22). https://doi.org/10.1063/1.2817741

Nepal, N., Mahros, A. M., Bedair, S. M., El-Masry, N. A., & Zavada, J. M. (2007). Correlation between photoluminescence and magnetic properties of GaMnN films. APPLIED PHYSICS LETTERS, 91(24). https://doi.org/10.1063/1.2823602

Barletta, P. T., Berkman, E. A., Moody, B. F., El-Masry, N. A., Emara, A. M., Reed, M. J., & Bedair, S. M. (2007). Development of green, yellow, and amber light emitting diodes using InGaN multiple quantum well structures. APPLIED PHYSICS LETTERS, 90(15). https://doi.org/10.1063/1.2721133

Mahros, A. M., Luen, M. O., Emara, A., Bedair, S. M., Berkman, E. A., El-Masry, N. A., & Zavada, J. M. (2007). Magnetic and magnetotransport properties of (AlGaN/GaN): Mg/(GaMnN) heterostructures at room temperature. APPLIED PHYSICS LETTERS, 90(25). https://doi.org/10.1063/1.2749717

Zhang, Z.-B., Misra, V., Bedair, S. M. A., & Ozturk, M. (2007). Optoelectonic devices having arrays of quantum-dot compound semiconductor superlattices therein. Washington, DC: U.S. Patent and Trademark Office.

Reed, M. J., Arkun, F. E., Berkman, E. A., Elmasry, N. A., Zavada, J., Luen, M. O., … Bedair, S. M. (2005). Effect of doping on the magnetic properties of GaMnN: Fermi level engineering. APPLIED PHYSICS LETTERS, 86(10). https://doi.org/10.1063/1.1881786

Elmasry, N. A., Hunter, M., ElNaggar, A., & Bedair, S. M. (2005). Five-nanometer thick silicon on insulator layer. JOURNAL OF APPLIED PHYSICS, 98(10). https://doi.org/10.1063/1.1803625

Reed, M. L., Reed, M. J., Luen, M. O., Berkman, E. A., Arkun, F. E., Bedair, S. M., … El-Masry, N. A. (2005). Magnetic properties of Mn-doped GaN andp-i-n junctions. Physica Status Solidi (c), 2(7), 2403–2406. https://doi.org/10.1002/pssc.200461517

Zhang, Z., Misra, V., Bedair, S. M. A., & Ozturk, M. (2005). Optoelectronic devices having arrays of quantum-dot compound semiconductor superlattices therein. Washington, DC: U.S. Patent and Trademark Office.

Arkun, F. E., Reed, M. J., Berkman, E. A., El-Masry, N. A., Zavada, J. M., Reed, M. L., & Bedair, S. M. (2004). Dependence of ferromagnetic properties on carrier transfer at GaMnN/GaN : Mg interface. APPLIED PHYSICS LETTERS, 85(17), 3809–3811. https://doi.org/10.1063/1.1810216

Xiao, D., Kim, K. W., Bedair, S. M., & Zavada, J. M. (2004). Design of white light-emitting diodes using InGaN/AlInGaN quantum-well structures. Applied Physics Letters, 84(5), 672–674. https://doi.org/10.1063/1.1644920

Reed, M. L., Reed, M. J., Jagannadham, K., Verghese, K., Bedair, S. M., El-Masry, N., & Butler, J. E. (2004). Electrical characterization of B-10 doped diamond irradiated with low thermal neutron fluence. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 22, pp. 1191–1194. https://doi.org/10.1116/1.1763910

Zhang, Z., Misra, V., Bedair, S. M. A., & Ozturk, M. (2004). Methods of forming nano-scale electronic and optoelectronic devices using non-photolithographically defined nano-channel templates. Washington, DC: U.S. Patent and Trademark Office.

Moody, B. F., Barletta, P. T., El-Masry, N. A., Roberts, J. C., Aumer, M. E., LeBoeuf, S. F., & Bedair, S. M. (2002). Effect of H-2 on nitrogen incorporation in the metalorganic chemical vapor deposition of GaAs1-yNy (0 <= y <= 0.08). APPLIED PHYSICS LETTERS, 80(14), 2475–2477. https://doi.org/10.1063/1.1464225

Aumer, M. E., LeBoeuf, S. F., Moody, B. F., Bedair, S. M., Nam, K., Lin, J. Y., & Jiang, H. X. (2002). Effects of tensile, compressive, and zero strain on localized states in AlInGaN/InGaN quantum-well structures. APPLIED PHYSICS LETTERS, 80(17), 3099–3101. https://doi.org/10.1063/1.1469219

Roberts, J. C., Parker, C. A., Muth, J. F., Leboeuf, S. F., Aumer, M. E., Bedair, S. M., & Reed, M. J. (2002, January 1). Ultraviolet-visible metal-semiconductor-metal photodetectors fabricated from InxGa1-xN (0 <= x <= 0.13).

Liliental-Weber, Z., Benamara, M., Washburn, J., Domagala, J. Z., Bak-Misiuk, J., Piner, E. L., … Bedair, S. M. (2001, April). Relaxation of InGaN thin layers observed by x-ray and transmission electron microscopy studies. JOURNAL OF ELECTRONIC MATERIALS, Vol. 30, pp. 439–444. https://doi.org/10.1007/s11664-001-0056-5

Reed, M. L., El-Masry, N. A., Stadelmaier, H. H., Ritums, M. K., Reed, M. J., Parker, C. A., … Bedair, S. M. (2001). Room temperature ferromagnetic properties of (Ga, Mn)N. APPLIED PHYSICS LETTERS, 79(21), 3473–3475. https://doi.org/10.1063/1.1419231

Reed, M. L., Ritums, M. K., Stadelmaier, H. H., Reed, M. J., Parker, C. A., Bedair, S. M., & El-Masry, N. A. (2001). Room temperature magnetic (Ga,Mn)N: a new material for spin electronic devices. MATERIALS LETTERS, 51(6), 500–503. https://doi.org/10.1016/S0167-577X(01)00342-1

El-Masry, N. A., Behbehani, M. K., LeBoeuf, S. F., Aumer, M. E., Roberts, J. C., & Bedair, S. M. (2001). Self-assembled AlInGaN quaternary superlattice structures. APPLIED PHYSICS LETTERS, 79(11), 1616–1618. https://doi.org/10.1063/1.1400763

Aumer, M. E., LeBoeuf, S. F., Moody, B. F., & Bedair, S. M. (2001). Strain-induced piezoelectric field effects on light emission energy and intensity from AlInGaN/InGaN quantum wells. APPLIED PHYSICS LETTERS, 79(23), 3803–3805. https://doi.org/10.1063/1.1418453

Alexson, D., Bergman, L., Nemanich, R. J., Dutta, M., Stroscio, M. A., Parker, C. A., … Adar, F. (2001). Ultraviolet raman study of A(1)(LO) and E-2 phonons in InxGa1-xN alloys. JOURNAL OF APPLIED PHYSICS, 89(1), 798–800. https://doi.org/10.1063/1.1330760

Reed, M. J., El-Masry, N. A., Parker, C. A., Roberts, J. C., & Bedair, S. M. (2000). Critical layer thickness determination of GaN/InGaN/GaN double heterostructures. Applied Physics Letters, 77(25), 4121–4123. https://doi.org/10.1063/1.1334361

Aumer, M. E., LeBoeuf, S. F., Bedair, S. M., Smith, M., Lin, J. Y., & Jiang, H. X. (2000). Effects of tensile and compressive strain on the luminescence properties of AlInGaN/InGaN quantum well structures. APPLIED PHYSICS LETTERS, 77(6), 821–823. https://doi.org/10.1063/1.1306648

Hunter, M. E., Reed, M. J., El-Masry, N. A., Roberts, J. C., & Bedair, S. M. (2000). Epitaxial Y2O3 films grown on Si(111) by pulsed-laser ablation. APPLIED PHYSICS LETTERS, 76(14), 1935–1937. https://doi.org/10.1063/1.126217

LeBoeuf, S. F., Aumer, M. E., & Bedair, S. M. (2000). Exploring the effects of tensile and compressive strain on two-dimensional electron gas properties within InGaN quantum wells. APPLIED PHYSICS LETTERS, 77(1), 97–99. https://doi.org/10.1063/1.126889

Liu, S. X., Bedair, S. M., & El-Masry, N. A. (2000). Mn-prelayer effects on the epitaxial growth of MnSb on (111)B GaAs by pulsed laser deposition. MATERIALS LETTERS, 42(1-2), 121–129. https://doi.org/10.1016/s0167-577x(99)00170-6

Reed, M. L., Liu, S. X., Roberts, J. C., Stadelmaier, H. H., Bedair, S. M., & El-Masry, N. A. (2000). The planar Hall effect in MnSb films and MnSb-based multilayer structures grown on (111)B GaAs. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 218(2-3), 177–181. https://doi.org/10.1016/S0304-8853(00)00403-0

Parker, C. A., Roberts, J. C., Bedair, S. M., Reed, M. J., Liu, S. X., & El-Masry, N. A. (1999). Determination of the critical layer thickness in the InGaN/GaN heterostructures. APPLIED PHYSICS LETTERS, 75(18), 2776–2778. https://doi.org/10.1063/1.125146

Joshkin, V. A., Parker, C. A., Bedair, S. M., Muth, J. F., Shmagin, I. K., Kolbas, R. M., … Molnar, R. J. (1999). Effect of growth temperature on point defect density of unintentionally doped GaN grown by metalorganic chemical vapor deposition and hydride vapor phase epitaxy. JOURNAL OF APPLIED PHYSICS, 86(1), 281–288. https://doi.org/10.1063/1.370727

Aumer, M. E., LeBoeuf, S. F., McIntosh, F. G., & Bedair, S. M. (1999). High optical quality AlInGaN by metalorganic chemical vapor deposition. APPLIED PHYSICS LETTERS, 75(21), 3315–3317. https://doi.org/10.1063/1.125336

Robins, L. H., Paul, A. J., Parker, C. A., Roberts, J. C., Bedair, S. M., Piner, E. L., & El-Masry, N. A. (1999). Optical absorption, Raman, and photoluminescence excitation spectroscopy of inhomogeneous InGaN films. MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.22). https://doi.org/10.1557/s1092578300002490

Parker, C. A., Roberts, J. C., Bedair, S. M., Reed, M. J., Liu, S. X., El-Masry, N. A., & Robins, L. H. (1999). Optical band gap dependence on composition and thickness of InxGa1-xN (0 < x < 0.25) grown on GaN. APPLIED PHYSICS LETTERS, 75(17), 2566–2568. https://doi.org/10.1063/1.125079

Behbehani, M. K., Piner, E. L., Liu, S. X., El-Masry, N. A., & Bedair, S. M. (1999). Phase separation and ordering coexisting in InxGa1-xN grown by metal organic chemical vapor deposition. APPLIED PHYSICS LETTERS, 75(15), 2202–2204. https://doi.org/10.1063/1.124964

Joshkin, V. A., Parker, C. A., Bedair, S. M., Krasnobaev, L. Y., Cuomo, J. J., Davis, R. F., & Suvkhanov, A. (1998). Fine structure of near-band-edge photoluminescence in He+-irradiated GaN grown on SiC. APPLIED PHYSICS LETTERS, 72(22), 2838–2840. https://doi.org/10.1063/1.121474

McIntosh, F. G., Bedair, S. M., El-Masry, N. A., & Roberts, J. C. (1998). Methods of forming indium gallium nitride or aluminum indium gallium nitride using controlled hydrogen gas flow. Washington, DC: U.S. Patent and Trademark Office.

El-Masry, N. A., Piner, E. L., Liu, S. X., & Bedair, S. M. (1998). Phase separation in InGaN grown by metalorganic chemical vapor deposition. APPLIED PHYSICS LETTERS, 72(1), 40–42. https://doi.org/10.1063/1.120639

Piner, E. L., Behbehani, M. K., ElMasry, N. A., McIntosh, F. G., Roberts, J. C., Boutros, K. S., & Bedair, S. M. (1997). Effect of hydrogen on the indium incorporation in InGaN epitaxial films. APPLIED PHYSICS LETTERS, 70(4), 461–463. https://doi.org/10.1063/1.118181

McIntosh, F. G., Piner, E. L., Roberts, J. C., Behbehani, M. K., Aumer, M. E., ElMasry, N. A., & Bedair, S. M. (1997, March). Epitaxial deposition of GaInN and InN using the rotating susceptor ALE system. APPLIED SURFACE SCIENCE, Vol. 112, pp. 98–101. https://doi.org/10.1016/S0169-4332(96)00992-0

Bedair, S. M., McIntosh, F. G., Roberts, J. C., Piner, E. L., Boutros, K. S., & ElMasry, N. A. (1997). Growth and characterization of In-based nitride compounds. JOURNAL OF CRYSTAL GROWTH, 178(1-2), 32–44. https://doi.org/10.1016/S0022-0248(97)00069-9

Piner, E. L., Behbehani, M. K., ElMasry, N. A., Roberts, J. C., McIntosh, F. G., & Bedair, S. M. (1997). Impurity dependence on hydrogen and ammonia flow rates in InGaN bulk films. APPLIED PHYSICS LETTERS, 71(14), 2023–2025. https://doi.org/10.1063/1.119775

Joshkin, V. A., Roberts, J. C., McIntosh, F. G., Bedair, S. M., Piner, E. L., & Behbehani, M. K. (1997). Optical memory effect in GaN epitaxial films. APPLIED PHYSICS LETTERS, 71(2), 234–236. https://doi.org/10.1063/1.120414

Zeng, K. C., Smith, M., Lin, J. Y., Jiang, H. X., Roberts, J. C., Piner, E. L., & McIntosh, F. G. (1997). Optical transitions in InGaN/AlGaN single quantum wells. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 15(4), 1139–1143.

McIntosh, F. G., Bedair, S. M., El-Masry, N. A., & Roberts, J. C. (1997). Stacked quantum well aluminum indium gallium nitride light emitting diodes. Washington, DC: U.S. Patent and Trademark Office.

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