@article{harris_gaddy_collazo_sitar_irving_2019, title={Oxygen and silicon point defects in Al0.65Ga0.35N}, volume={3}, ISBN={2475-9953}, DOI={10.1103/PhysRevMaterials.3.054604}, number={5}, journal={PHYSICAL REVIEW MATERIALS}, author={Harris, Joshua S. and Gaddy, Benjamin E. and Collazo, Ramon and Sitar, Zlatko and Irving, Douglas L.}, year={2019} }
 @article{bryan_bryan_washiyama_reddy_gaddy_sarkar_breckenridge_guo_bobea_tweedie_et al._2018, title={Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD}, volume={112}, DOI={10.1063/1.5011984}, number={6}, journal={Applied Physics Letters}, author={Bryan, I. and Bryan, Z. and Washiyama, S. and Reddy, P. and Gaddy, B. and Sarkar, B. and Breckenridge, M. H. and Guo, Q. and Bobea, M. and Tweedie, J. and et al.}, year={2018} }
 @article{harris_baker_gaddy_bryan_bryan_mirrielees_reddy_collazo_sitar_irving_2018, title={On compensation in Si-doped AlN}, volume={112}, DOI={10.1063/1.5022794}, number={15}, journal={Applied Physics Letters}, author={Harris, J. S. and Baker, J. N. and Gaddy, B. E. and Bryan, I. and Bryan, Z. and Mirrielees, K. J. and Reddy, P. and Collazo, R. and Sitar, Z. and Irving, D. L.}, year={2018} }
 @article{sachet_shelton_harris_gaddy_irving_curtarolo_donovan_hopkins_sharma_sharma_et al._2015, title={Dysprosium-doped cadmium oxide as a gateway material for mid-infrared plasmonics}, volume={14}, DOI={10.1038/nmat4203}, number={4}, journal={Nature Materials}, author={Sachet, E. and Shelton, C. T. and Harris, J. S. and Gaddy, B. E. and Irving, D. L. and Curtarolo, S. and Donovan, B. F. and Hopkins, P. E. and Sharma, P. A. and Sharma, A. L. and et al.}, year={2015}, pages={414–420} }
 @article{bryan_bryan_gaddy_reddy_hussey_bobea_guo_hoffmann_kirste_tweedie_et al._2014, title={Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN}, volume={105}, DOI={10.1063/1.4903058}, number={22}, journal={Applied Physics Letters}, author={Bryan, Z. and Bryan, I. and Gaddy, B. E. and Reddy, P. and Hussey, L. and Bobea, M. and Guo, W. and Hoffmann, M. and Kirste, R. and Tweedie, J. and et al.}, year={2014} }
 @article{gaddy_paisley_maria_irving_2014, title={Overcoming the polarization catastrophe in the rocksalt oxides MgO and CaO}, volume={90}, DOI={10.1103/physrevb.90.125403}, number={12}, journal={Physical Review. B, Condensed Matter and Materials Physics}, author={Gaddy, B. E. and Paisley, E. A. and Maria, J. P. and Irving, D. L.}, year={2014} }
 @article{paisley_gaddy_lebeau_shelton_biegalski_christen_losego_mita_collazo_sitar_et al._2014, title={Smooth cubic commensurate oxides on gallium nitride}, volume={115}, DOI={10.1063/1.4861172}, number={6}, journal={Journal of Applied Physics}, author={Paisley, E. A. and Gaddy, B. E. and LeBeau, J. M. and Shelton, C. T. and Biegalski, M. D. and Christen, H. M. and Losego, M. D. and Mita, S. and Collazo, R. and Sitar, Z. and et al.}, year={2014} }
 @article{gaddy_bryan_bryan_xie_dalmau_moody_kumagai_nagashima_kubota_kinoshita_et al._2014, title={The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN}, volume={104}, DOI={10.1063/1.4878657}, number={20}, journal={Applied Physics Letters}, author={Gaddy, B. E. and Bryan, Z. and Bryan, I. and Xie, J. Q. and Dalmau, R. and Moody, B. and Kumagai, Y. and Nagashima, T. and Kubota, Y. and Kinoshita, T. and et al.}, year={2014} }
 @article{gaddy_kingon_irving_2013, title={Effects of alloying and local order in AuNi contacts for Ohmic radio frequency micro electro mechanical systems switches via multi-scale simulation}, volume={113}, DOI={10.1063/1.4804954}, number={20}, journal={Journal of Applied Physics}, author={Gaddy, B. E. and Kingon, A. I. and Irving, D. L.}, year={2013} }
 @article{gaddy_bryan_bryan_kirste_xie_dalmau_moody_kumagai_nagashima_kubota_et al._2013, title={Vacancy compensation and related donor-acceptor pair recombination in bulk AlN}, volume={103}, DOI={10.1063/1.4824731}, number={16}, journal={Applied Physics Letters}, author={Gaddy, B. E. and Bryan, Z. and Bryan, I. and Kirste, R. and Xie, J. Q. and Dalmau, R. and Moody, B. and Kumagai, Y. and Nagashima, T. and Kubota, Y. and et al.}, year={2013} }
 @article{collazo_xie_gaddy_bryan_kirste_hoffmann_dalmau_moody_kumagai_nagashima_et al._2012, title={On the origin of the 265 nm absorption band in AlN bulk crystals}, volume={100}, DOI={10.1063/1.4717623}, number={19}, journal={Applied Physics Letters}, author={Collazo, R. and Xie, J. Q. and Gaddy, B. E. and Bryan, Z. and Kirste, R. and Hoffmann, M. and Dalmau, R. and Moody, B. and Kumagai, Y. and Nagashima, T. and et al.}, year={2012} }
 @article{paisley_losego_gaddy_tweedie_collazo_sitar_irving_maria_2011, title={Surfactant-enabled epitaxy through control of growth mode with chemical boundary conditions}, volume={2}, DOI={10.1038/ncomms1470}, journal={Nature Communications}, author={Paisley, E. A. and Losego, M. D. and Gaddy, B. E. and Tweedie, J. S. and Collazo, R. and Sitar, Z. and Irving, D. L. and Maria, J. P.}, year={2011} }
 @inproceedings{alden_bryan_gaddy_bryan_callsen_koukitu_kumagai_hoffmann_irving_sitar_et al., title={On the origin of the 4.7 eV absorption and 2.8 eV emission bands in bulk AlN substrates}, volume={72}, number={5}, booktitle={Wide bandgap semiconductor materials and devices 17}, author={Alden, D. and Bryan, Z. and Gaddy, B. E. and Bryan, I. and Callsen, G. and Koukitu, A. and Kumagai, Y. and Hoffmann, A. and Irving, D. L. and Sitar, Z. and et al.}, pages={31–40} }