Benjamin Erik Gaddy

Harris, J. S., Gaddy, B. E., Collazo, R., Sitar, Z., & Irving, D. L. (2019). Oxygen and silicon point defects in Al0.65Ga0.35N. PHYSICAL REVIEW MATERIALS, 3(5). https://doi.org/10.1103/PhysRevMaterials.3.054604

Bryan, I., Bryan, Z., Washiyama, S., Reddy, P., Gaddy, B., Sarkar, B., … Sitar, Z. (2018). Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD. APPLIED PHYSICS LETTERS, 112(6). https://doi.org/10.1063/1.5011984

Harris, J. S., Baker, J. N., Gaddy, B. E., Bryan, I., Bryan, Z., Mirrielees, K. J., … Irving, D. L. (2018). On compensation in Si-doped AlN. APPLIED PHYSICS LETTERS, 112(15). https://doi.org/10.1063/1.5022794

Sachet, E., Shelton, C. T., Harris, J. S., Gaddy, B. E., Irving, D. L., Curtarolo, S., … Maria, J.-P. (2015). Dysprosium-doped cadmium oxide as a gateway material for mid-infrared plasmonics. Nature Materials, 14(4), 414–420. https://doi.org/10.1038/nmat4203

Bryan, Z., Bryan, I., Gaddy, B. E., Reddy, P., Hussey, L., Bobea, M., … Collazo, R. (2014). Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN. APPLIED PHYSICS LETTERS, 105(22). https://doi.org/10.1063/1.4903058

Gaddy, B. E., Paisley, E. A., Maria, J.-P., & Irving, D. L. (2014). Overcoming the polarization catastrophe in the rocksalt oxides MgO and CaO. PHYSICAL REVIEW B, 90(12). https://doi.org/10.1103/physrevb.90.125403

Paisley, E. A., Gaddy, B. E., LeBeau, J. M., Shelton, C. T., Biegalski, M. D., Christen, H. M., … Maria, J.-P. (2014). Smooth cubic commensurate oxides on gallium nitride. JOURNAL OF APPLIED PHYSICS, 115(6). https://doi.org/10.1063/1.4861172

Gaddy, B. E., Bryan, Z., Bryan, I., Xie, J., Dalmau, R., Moody, B., … Irving, D. L. (2014). The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN. APPLIED PHYSICS LETTERS, 104(20). https://doi.org/10.1063/1.4878657

Gaddy, B. E., Kingon, A. I., & Irving, D. L. (2013). Effects of alloying and local order in AuNi contacts for Ohmic radio frequency micro electro mechanical systems switches via multi-scale simulation. JOURNAL OF APPLIED PHYSICS, 113(20). https://doi.org/10.1063/1.4804954

Gaddy, B. E., Bryan, Z., Bryan, I., Kirste, R., Xie, J., Dalmau, R., … Irving, D. L. (2013). Vacancy compensation and related donor-acceptor pair recombination in bulk AlN. APPLIED PHYSICS LETTERS, 103(16). https://doi.org/10.1063/1.4824731

Collazo, R., Xie, J., Gaddy, B. E., Bryan, Z., Kirste, R., Hoffmann, M., … Sitar, Z. (2012). On the origin of the 265 nm absorption band in AlN bulk crystals. APPLIED PHYSICS LETTERS, 100(19). https://doi.org/10.1063/1.4717623

Paisley, E. A., Losego, M. D., Gaddy, B. E., Tweedie, J. S., Collazo, R., Sitar, Z., … Maria, J.-P. (2011). Surfactant-enabled epitaxy through control of growth mode with chemical boundary conditions. NATURE COMMUNICATIONS, 2. https://doi.org/10.1038/ncomms1470

Alden, D., Bryan, Z., Gaddy, B. E., Bryan, I., Callsen, G., Koukitu, A., … Collazo, R. On the origin of the 4.7 eV absorption and 2.8 eV emission bands in bulk AlN substrates. Wide bandgap semiconductor materials and devices 17, 72(5), 31–40.