@article{gokce_gundogdu_aspnes_2012, title={Control of the oxidation kinetics of H-terminated (111)Si by using the carrier concentration and the strain: a second-harmonic-generation investigation}, volume={60}, ISSN={["1976-8524"]}, DOI={10.3938/jkps.60.1685}, number={10}, journal={JOURNAL OF THE KOREAN PHYSICAL SOCIETY}, author={Gokce, B. and Gundogdu, K. and Aspnes, D. E.}, year={2012}, month={May}, pages={1685–1689} }
 @article{gokce_dougherty_gundogdu_2012, title={Effect of p-type doping on the oxidation of H-Si(111) studied by second-harmonic generation}, volume={30}, number={4}, journal={Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films}, author={Gokce, B. and Dougherty, D. B. and Gundogdu, K.}, year={2012} }
 @article{gokce_gundogdu_adles_aspnes_2011, title={Back-reflection Second-harmonic Generation of (111)Si: Theory and Experiment}, volume={58}, ISSN={["1976-8524"]}, DOI={10.3938/jkps.58.1237}, number={5}, journal={JOURNAL OF THE KOREAN PHYSICAL SOCIETY}, author={Gokce, B. and Gundogdu, K. and Adles, E. J. and Aspnes, D. E.}, year={2011}, month={May}, pages={1237–1243} }
 @article{gokce_aspnes_lucovsky_gundogdu_2011, title={Bond-specific reaction kinetics during the oxidation of (111) Si: Effect of n-type doping}, volume={98}, number={2}, journal={Applied Physics Letters}, author={Gokce, B. and Aspnes, D. E. and Lucovsky, G. and Gundogdu, K.}, year={2011} }
 @article{gokce_aspnes_gundogdu_2011, title={Effect of strain on bond-specific reaction kinetics during the oxidation of H-terminated (111) Si}, volume={98}, number={12}, journal={Applied Physics Letters}, author={Gokce, B. and Aspnes, D. E. and Gundogdu, K.}, year={2011} }
 @article{gokce_adles_aspnes_gundogdu_2011, title={Measurement and Control of In-Plane Surface Chemistry During Oxidation of H-Terminated (111)Si}, volume={1399}, ISSN={["0094-243X"]}, DOI={10.1063/1.3666321}, journal={PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS}, author={Gokce, Bilal and Adles, Eric J. and Aspnes, David E. and Gundogdu, Kenan}, year={2011} }
 @article{gokce_adles_aspnes_gundogdu_2010, title={Measurement and control of in-plane surface chemistry during the oxidation of H-terminated (111) Si}, volume={107}, ISSN={0027-8424 1091-6490}, url={http://dx.doi.org/10.1073/pnas.1011295107}, DOI={10.1073/pnas.1011295107}, number={41}, journal={Proceedings of the National Academy of Sciences}, publisher={Proceedings of the National Academy of Sciences}, author={Gokce, Bilal and Adles, Eric J. and Aspnes, David E. and Gundogdu, Kenan}, year={2010}, month={Sep}, pages={17503–17508} }