@article{gokce_gundogdu_aspnes_2012, title={Control of the oxidation kinetics of H-terminated (111)Si by using the carrier concentration and the strain: a second-harmonic-generation investigation}, volume={60}, ISSN={["1976-8524"]}, DOI={10.3938/jkps.60.1685}, abstractNote={We discuss recent results regarding the effects of strain, carrier type and concentration on the oxidation of H-terminated (111)Si. Second-harmonic-generation data show that this is a two-stage process where the H of the “up” bonds of the outermost Si layer is replaced by OH, followed by O insertion into the “back” bonds. These data provide additional detailed information about both stages. In particular, directional control of the in-plane surface chemistry by using the applied uniaxial stress provides new opportunities for interface control.}, number={10}, journal={JOURNAL OF THE KOREAN PHYSICAL SOCIETY}, author={Gokce, B. and Gundogdu, K. and Aspnes, D. E.}, year={2012}, month={May}, pages={1685–1689} }
 @article{gokce_dougherty_gundogdu_2012, title={Effect of p-type doping on the oxidation of H-Si(111) studied by second-harmonic generation}, volume={30}, number={4}, journal={Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films}, author={Gokce, B. and Dougherty, D. B. and Gundogdu, K.}, year={2012} }
 @article{gokce_gundogdu_adles_aspnes_2011, title={Back-reflection Second-harmonic Generation of (111)Si: Theory and Experiment}, volume={58}, ISSN={["1976-8524"]}, DOI={10.3938/jkps.58.1237}, abstractNote={We consider second-harmonic generation (SHG) from a (111) surface of a tetrahedrally bonded semiconductor illuminated at normal incidence by a focused pump beam of Gaussian cross section as a model of SHG by focused beams. Calculations are done in the anisotropic bond model (ABM) and the results are applied to Si. The unit-cell configuration is simple enough for the calculations to be done analytically, so the results can be compared directly to similar calculations done for amorphous material. Although the differences in unit-cell symmetry occur on the atomic scale, they lead to large differences in the spatial distribution of the emerging radiation. Lateral focusing, which might be expected to increase the bulk contribution to SHG by increasing the lateral field gradient, has little effect; the spatial-dispersion contribution remains dominated by the phase term. Focusing does not inhibit backscattered SHG from the bulk, although our data on the oxidation of H-terminated (111)Si clearly show that in some cases the interface contribution dominates by a wide margin.}, number={5}, journal={JOURNAL OF THE KOREAN PHYSICAL SOCIETY}, author={Gokce, B. and Gundogdu, K. and Adles, E. J. and Aspnes, D. E.}, year={2011}, month={May}, pages={1237–1243} }
 @article{gokce_aspnes_lucovsky_gundogdu_2011, title={Bond-specific reaction kinetics during the oxidation of (111) Si: Effect of n-type doping}, volume={98}, number={2}, journal={Applied Physics Letters}, author={Gokce, B. and Aspnes, D. E. and Lucovsky, G. and Gundogdu, K.}, year={2011} }
 @article{gokce_aspnes_gundogdu_2011, title={Effect of strain on bond-specific reaction kinetics during the oxidation of H-terminated (111) Si}, volume={98}, number={12}, journal={Applied Physics Letters}, author={Gokce, B. and Aspnes, D. E. and Gundogdu, K.}, year={2011} }
 @article{gokce_adles_aspnes_gundogdu_2011, title={Measurement and Control of In-Plane Surface Chemistry During Oxidation of H-Terminated (111)Si}, volume={1399}, ISSN={["0094-243X"]}, DOI={10.1063/1.3666321}, abstractNote={We demonstrate both directional control and measurement of the oxidation of H‐terminated (111)Si. Control is achieved through externally applied strain, with strained back bonds oxidizing faster than unstrained ones. Real‐time measurement is achieved by second‐harmonic generation (SHG), with SHG anisotropy data analyzed with the anisotropic bond‐charge model of nonlinear optics. Anisotropic oxidation also results in structural changes, which appear as rotations of the average orientations of the back bonds from their unperturbed directions.}, journal={PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS}, author={Gokce, Bilal and Adles, Eric J. and Aspnes, David E. and Gundogdu, Kenan}, year={2011} }
 @article{gokce_adles_aspnes_gundogdu_2010, title={Measurement and control of in-plane surface chemistry during the oxidation of H-terminated (111) Si}, volume={107}, ISSN={0027-8424 1091-6490}, url={http://dx.doi.org/10.1073/pnas.1011295107}, DOI={10.1073/pnas.1011295107}, abstractNote={In-plane directional control of surface chemistry during interface formation can lead to new opportunities regarding device structures and applications. Control of this type requires techniques that can probe and hence provide feedback on the chemical reactivity of bonds not only in specific directions but also in real time. Here, we demonstrate both control and measurement of the oxidation of H-terminated (111) Si. Control is achieved by externally applying uniaxial strain, and measurement by second-harmonic generation (SHG) together with the anisotropic-bond model of nonlinear optics. In this system anisotropy results because bonds in the strain direction oxidize faster than those perpendicular to it, leading in addition to transient structural changes that can also be detected at the bond level by SHG.}, number={41}, journal={Proceedings of the National Academy of Sciences}, publisher={Proceedings of the National Academy of Sciences}, author={Gokce, Bilal and Adles, Eric J. and Aspnes, David E. and Gundogdu, Kenan}, year={2010}, month={Sep}, pages={17503–17508} }