Bilal Gokce

Gokce, B., Gundogdu, K., & Aspnes, D. E. (2012). Control of the oxidation kinetics of H-terminated (111)Si by using the carrier concentration and the strain: a second-harmonic-generation investigation. JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 60(10), 1685–1689. https://doi.org/10.3938/jkps.60.1685

Gokce, B., Dougherty, D. B., & Gundogdu, K. (2012). Effect of p-type doping on the oxidation of H-Si(111) studied by second-harmonic generation. Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 30(4).

Gokce, B., Gundogdu, K., Adles, E. J., & Aspnes, D. E. (2011, May). Back-reflection Second-harmonic Generation of (111)Si: Theory and Experiment. JOURNAL OF THE KOREAN PHYSICAL SOCIETY, Vol. 58, pp. 1237–1243. https://doi.org/10.3938/jkps.58.1237

Gokce, B., Aspnes, D. E., Lucovsky, G., & Gundogdu, K. (2011). Bond-specific reaction kinetics during the oxidation of (111) Si: Effect of n-type doping. Applied Physics Letters, 98(2).

Gokce, B., Aspnes, D. E., & Gundogdu, K. (2011). Effect of strain on bond-specific reaction kinetics during the oxidation of H-terminated (111) Si. Applied Physics Letters, 98(12).

Gokce, B., Adles, E. J., Aspnes, D. E., & Gundogdu, K. (2011). Measurement and Control of In-Plane Surface Chemistry During Oxidation of H-Terminated (111)Si. PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, Vol. 1399. https://doi.org/10.1063/1.3666321

Gokce, B., Adles, E. J., Aspnes, D. E., & Gundogdu, K. (2010). Measurement and control of in-plane surface chemistry during the oxidation of H-terminated (111) Si. Proceedings of the National Academy of Sciences, 107(41), 17503–17508. https://doi.org/10.1073/pnas.1011295107