Bantval Baliga Narwal, R., Rawat, S., Kanale, A., Cheng, T.-H., Agarwal, A., Bhattacharya, S., … Hopkins, D. C. (2023). Analysis and Characterization of Four-quadrant Switches based Commutation Cell. 2023 IEEE Applied Power Electronics Conference and Exposition (APEC), 2023-March, 209–216. https://doi.org/10.1109/APEC43580.2023.10131312 Narwal, R., Bhattacharya, S., Baliga, B. J., & Hopkins, D. C. (2023). Bidirectional Three-phase Current Source Converter based Buck-boost AC/DC System using Bidirectional Switches. 2023 IEEE TRANSPORTATION ELECTRIFICATION CONFERENCE & EXPO, ITEC. https://doi.org/10.1109/ITEC55900.2023.10186945 Narasimhan, S., Kanale, A., Bhattacharya, S., & Baliga, J. B. (2023). Performance Evaluation of 3.3 kV SiC MOSFET and Schottky Diode Based Reverse Voltage Blocking Switch for Medium Voltage Current Source Inverter Application. IEEE ACCESS, 11, 89277–89289. https://doi.org/10.1109/ACCESS.2023.3302916 Bhattacharya, S., Narwal, R., Shah, S. S., Baliga, B. J., Agarwal, A., Kanale, A., … Cheng, T.-H. (2023). Power Conversion Systems Enabled by SiC BiDFET Device. IEEE POWER ELECTRONICS MAGAZINE, 10(1), 39–43. https://doi.org/10.1109/MPEL.2023.3237060 Baliga, B. J. (2023). Silicon Carbide Power Devices: Progress and Future Outlook. IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 11(3), 2400–2411. https://doi.org/10.1109/JESTPE.2023.3258344 Baliga, B. J., Hopkins, D., Bhattacharya, S., Agarwal, A., Cheng, T.-H., Narwal, R., … Han, K. (2023). The BiDFET Device and Its Impact on Converters. IEEE POWER ELECTRONICS MAGAZINE, 10(1), 20–27. https://doi.org/10.1109/MPEL.2023.3237059 Baliga, B. J. (2023). The IGBT Device: Physics, Design and Applications of the Insulated Gate Bipolar Transistor (2nd ed.). Amsterdam: Elsevier. Kanale, A., Cheng, T.-H., Narwal, R., Agarwal, A., Baliga, B. J., Bhattacharya, S., & Hopkins, D. C. (2022). Design Considerations for Developing 1.2 kV 4H-SiC BiDFET-enabled Power Conversion Systems. Presented at the 2022 IEEE Energy Conversion Congress and Exposition (ECCE). https://doi.org/10.1109/ECCE50734.2022.9947715 Agarwal, A., & Baliga, B. J. (2022). Implant Straggle Impact on 1.2 kV SiC Power MOSFET Static and Dynamic Parameters. IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 10, 245–255. https://doi.org/10.1109/JEDS.2022.3152489 Kumar, A., Bhattacharya, S., & Baliga, J. (2022). Influence of the Inverter Dead-time on the Reverse Recovery Characteristics of 3.3-kV SiC MOSFETs and JBSFETs. 2022 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE). https://doi.org/10.1109/ECCE50734.2022.9947390 Kanale, A., Agarwal, A., Baliga, B. J., & Bhattacharya, S. (2022). Monolithic Reverse Blocking 1.2 kV 4H-SiC Power Transistor: A Novel, Single-Chip, Three-Terminal Device for Current Source Inverter Applications. IEEE TRANSACTIONS ON POWER ELECTRONICS, 37(9), 10112–10116. https://doi.org/10.1109/TPEL.2022.3166933 Agarwal, A., & Baliga, B. J. (2022). Temperature Dependence of 55 nm Gate Oxide, 2.3 kV SiC Power JBSFETs With Linear, Hexagonal, and Octagonal Cell Layouts. IEEE TRANSACTIONS ON ELECTRON DEVICES, 69(3), 1233–1241. https://doi.org/10.1109/TED.2022.3148058 Agarwal, A., & Baliga, B. J. (2021). 2.3 kV 4H-SiC Planar-Gate Accumulation Channel Power JBSFETs: Analysis of Experimental Data. IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 9, 324–333. https://doi.org/10.1109/JEDS.2021.3058662 Agarwal, A., Baliga, J., Francois, M. M. A., Maxwell, E., Berliner, N., & Papageorge, M. (2021). 3.3 kV 4H-SiC Planar-Gate MOSFETs Manufactured using Gen-5 PRESiCE (TM) Technology in a 4-inch Wafer Commercial Foundry. SOUTHEASTCON 2021, pp. 555–558. https://doi.org/10.1109/SOUTHEASTCON45413.2021.9401931 Agarwal, A., Han, K., & Baliga, B. J. (2021). 650-V 4H-SiC Planar Inversion-Channel Power JBSFETs With 55-nm Gate Oxide: Relative Performance of Three Cell Types. IEEE TRANSACTIONS ON ELECTRON DEVICES, 68(5), 2395–2400. https://doi.org/10.1109/TED.2021.3067921 Kanale, A., & Baliga, B. J. (2021). A New User-Configurable Method to Improve Short-Circuit Ruggedness of 1.2-kV SiC Power MOSFETs. IEEE TRANSACTIONS ON POWER ELECTRONICS, 36(2), 2059–2067. https://doi.org/10.1109/TPEL.2020.3010154 Agarwal, A., Kanale, A., & Baliga, B. J. (2021). Advanced 650 V SiC Power MOSFETs With 10 V Gate Drive Compatible With Si Superjunction Devices. IEEE TRANSACTIONS ON POWER ELECTRONICS, 36(3), 3335–3345. https://doi.org/10.1109/TPEL.2020.3017215 Agarwal, A., Han, K., & Baliga, B. J. (2021). Assessment of Linear, Hexagonal, and Octagonal Cell Topologies for 650 V 4H-SiC Inversion-Channel Planar-Gate Power JBSFETs Fabricated With 27 nm Gate Oxide Thickness. IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 9, 79–88. https://doi.org/10.1109/JEDS.2020.3040353 Kanale, A., & Baliga, B. J. (2021). Comparison of BaSIC(DMM) and BaSIC(EMM) Topologies to Enhance Short-Circuit Capability in SiC Power MOSFETs. 2021 THIRTY-SIXTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2021), pp. 1275–1281. https://doi.org/10.1109/APEC42165.2021.9487334 Kanale, A., Narasimhan, S., Cheng, T.-H., Agarwal, A., Shah, S. S., Baliga, B. J., … Hopkins, D. C. (2021). Comparison of the Capacitances and Switching Losses of 1.2 kV Common-Source and Common- Drain Bidirectional Switch Topologies. 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 112–117. https://doi.org/10.1109/WiPDA49284.2021.9645130 Kanale, A., & Baliga, B. J. (2021). Eliminating Repetitive Short-Circuit Degradation and Failure of 1.2-kV SiC Power MOSFETs. IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 9(6), 6773–6779. https://doi.org/10.1109/JESTPE.2020.3045117 Kanale, A., & Baliga, B. J. (2021). Excellent Static and Dynamic Scaling of Power Handling Capability of the BaSIC(DMM) Topology with 1.2 kV SiC Power MOSFETs. 2021 IEEE 8TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), pp. 14–17. https://doi.org/10.1109/WiPDA49284.2021.9645145 Kumar, A., Kokkonda, R. K., Bhattacharya, S., Baliga, J., & Veliadis, V. (2021). High Voltage Output Characteristics and Short Circuit Robustness of HV SiC MOSFETs. 2021 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), pp. 5277–5282. https://doi.org/10.1109/ECCE47101.2021.9595821 Shah, S. S., Narwal, R., Bhattacharya, S., Kanale, A., Cheng, T.-H., Mehrotra, U., … Hopkins, D. C. (2021). Optimized AC/DC Dual Active Bridge Converter using Monolithic SiC Bidirectional FET (BiDFET) for Solar PV Applications. 2021 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), pp. 568–575. https://doi.org/10.1109/ECCE47101.2021.9595533 Kumar, A., Bhattacharya, S., Baliga, J., & Veliadis, V. (2021). Performance Comparison and Demonstration of 3-L Voltage Source Inverters Using 3.3 kV SiC MOSFETs for 2.3 kV High Speed Induction Motor Drive Applications. 2021 THIRTY-SIXTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2021), pp. 1103–1110. https://doi.org/10.1109/APEC42165.2021.9487135 Agarwal, A., & Baliga, B. J. (2021). Performance Enhancement of 2.3 kV 4H-SiC Planar-Gate MOSFETs Using Reduced Gate Oxide Thickness. IEEE TRANSACTIONS ON ELECTRON DEVICES, 68(10), 5029–5033. https://doi.org/10.1109/TED.2021.3102473 Kumar, A., Bhattacharya, S., Baliga, J., & Veliadis, V. (2021). Performance Evaluation of 10 kV SiC Current Switch Based PWM Current Source Inverter for 4.16 kV Motor Drive Applications. 2021 THIRTY-SIXTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2021), pp. 1219–1226. https://doi.org/10.1109/APEC42165.2021.9487162 Narasimhan, S., Kanale, A., Bhattacharya, S., & Baliga, J. (2021). Performance Evaluation of 3.3 kV SiC MOSFET and Schottky Diode for Medium Voltage Current Source Inverter Application. 2021 IEEE 8TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), pp. 366–371. https://doi.org/10.1109/WiPDA49284.2021.9645089 Kanale, A., & Baliga, B. J. (2021). Selection Methodology for Si Power MOSFETs Used to Enhance SiC Power MOSFET Short-Circuit Capability With the BaSIC(EMM) Topology. IEEE TRANSACTIONS ON POWER ELECTRONICS, 36(7), 8243–8252. https://doi.org/10.1109/TPEL.2020.3043281 Kanale, A., Cheng, T.-H., Shah, S. S., Han, K., Agarwal, A., Baliga, B. J., … Bhattacharya, S. (2021). Switching Characteristics of a 1.2 kV, 50 mΩ SiC Monolithic Bidirectional Field Effect Transistor (BiDFET) with Integrated JBS Diodes. 2021 IEEE Applied Power Electronics Conference and Exposition (APEC), 1267–1274. https://doi.org/10.1109/APEC42165.2021.9487410 Kanale, A., & Baliga, B. J. (2021). Theoretical Optimization of the Si GSS-DMM Device in the BaSIC Topology for SiC Power MOSFET Short-Circuit Capability Improvement. IEEE ACCESS, 9, 70039–70047. https://doi.org/10.1109/ACCESS.2021.3078134 Han, K., & Baliga, B. J. (2020). 1.2-kV 4H-SiC SenseFET With Monolithically Integrated Sensing Resistor. IEEE ELECTRON DEVICE LETTERS, 41(3), 437–440. https://doi.org/10.1109/LED.2020.2964773 Agarwal, A., Han, K., & Baliga, B. J. (2020). 2.3 kV 4H-SiC Accumulation-Channel Split-Gate Planar Power MOSFETs With Reduced Gate Charge. IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 8(1), 499–504. https://doi.org/10.1109/JEDS.2020.2991355 Agarwal, A., Han, K., & Baliga, B. J. (2020). 2.3-kV, 5-A 4H-SiC Ti and Ni JBS Rectifiers manufactured in Commercial Foundry: Impact of Implant Lateral Straggle. 2020 IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA). https://doi.org/10.1109/WiPDAAsia49671.2020.9360272 Agarwal, A., Han, K., & Jayant Baliga, B. (2020, January). 600 V 4H-SiC MOSFETs Fabricated in Commercial Foundry With Reduced Gate Oxide Thickness of 27 nm to Achieve IGBT-Compatible Gate Drive of 15 V (vol 40, pg 1792, 2019). IEEE ELECTRON DEVICE LETTERS, Vol. 41, pp. 195–195. https://doi.org/10.1109/LED.2019.2956966 Kanale, A., & Baliga, B. J. (2020). Achieving Short Circuit Capability for 600 V GaN FETs Using a Gate-Source-Shorted Si Depletion-Mode MOSFET in Series with the Source. 2020 IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA). https://doi.org/10.1109/WiPDAAsia49671.2020.9360275 Agarwal, A., Han, K., & Baliga, B. J. (2020). Comparison of 2.3-kV 4H-SiC Accumulation-Channel Planar Power MOSFETs Fabricated With Linear, Square, Hexagonal, and Octagonal Cell Topologies. IEEE TRANSACTIONS ON ELECTRON DEVICES, 67(9), 3673–3678. https://doi.org/10.1109/TED.2020.3005632 Kanale, A., & Baliga, B. J. (2020). Enhancing Short Circuit Capability of 1.2-kV Si IGBT Using a Gate-Source Shorted Si Depletion Mode MOSFET in Series With the Emitter. IEEE TRANSACTIONS ON POWER ELECTRONICS, 35(6), 6350–6361. https://doi.org/10.1109/TPEL.2019.2953589 Agarwal, A., Han, K., & Baliga, B. J. (2019). 600 V 4H-SiC MOSFETs Fabricated in Commercial Foundry With Reduced Gate Oxide Thickness of 27 nm to Achieve IGBT-Compatible Gate Drive of 15 V. IEEE ELECTRON DEVICE LETTERS, 40(11), 1792–1795. https://doi.org/10.1109/LED.2019.2942259 Han, K., & Baliga, B. J. (2019). Analysis and Experimental Quantification of 1.2-kV 4H-SiC Split-Gate Octagonal MOSFET. IEEE ELECTRON DEVICE LETTERS, 40(7), 1163–1166. https://doi.org/10.1109/LED.2019.2917637 Han, K., & Baliga, B. J. (2019). Comparison of Four Cell Topologies for 1.2-kV Accumulation- and Inversion-Channel 4H-SiC MOSFETs: Analysis and Experimental Results. IEEE TRANSACTIONS ON ELECTRON DEVICES, 66(5), 2321–2326. https://doi.org/10.1109/TED.2019.2905736 Han, K., & Baliga, B. J. (2019). Comprehensive Physics of Third Quadrant Characteristics for Accumulation- and Inversion-Channel 1.2-kV 4H-SiC MOSFETs. IEEE TRANSACTIONS ON ELECTRON DEVICES, 66(9), 3923–3928. https://doi.org/10.1109/TED.2019.2929733 Agarwal, A., Han, K., & Baliga, B. J. (2019). Impact of Cell Topology on Characteristics of 600V 4H-SiC Planar MOSFETs. IEEE ELECTRON DEVICE LETTERS, 40(5), 773–776. https://doi.org/10.1109/LED.2019.2908078 Han, K., & Baliga, B. J. (2019). The 1.2-kV 4H-SiC OCTFET: A New Cell Topology With Improved High-Frequency Figures-of-Merit. IEEE ELECTRON DEVICE LETTERS, 40(2), 299–302. https://doi.org/10.1109/LED.2018.2889221 Han, K., Baliga, B. J., & Sung, W. (2018). A Novel 1.2 kV 4H-SiC Buffered-Gate (BG) MOSFET: Analysis and Experimental Results. IEEE ELECTRON DEVICE LETTERS, 39(2), 248–251. https://doi.org/10.1109/led.2017.2785771 Jiang, Y., Sung, W., Baliga, J., Wang, S., Lee, B., & Huang, A. (2018, February). Electrical Characteristics of 10-kV 4H-SiC MPS Rectifiers with High Schottky Barrier Height. JOURNAL OF ELECTRONIC MATERIALS, Vol. 47, pp. 927–931. https://doi.org/10.1007/s11664-017-5812-2 Kumar, A., Parashar, S., Baliga, J., & Bhattacharya, S. (2018). Single shot avalanche energy characterization of 10kV, 10A 4H-SiC MOSFETs. Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC, 2018-March, 2737–2742. https://doi.org/10.1109/apec.2018.8341404 Sung, W., & Baliga, B. J. (2017). A Comparative Study 4500-V Edge Termination Techniques for SiC Devices. IEEE TRANSACTIONS ON ELECTRON DEVICES, 64(4), 1647–1652. https://doi.org/10.1109/ted.2017.2664051 Raheja, U., Gohil, G., Han, K., Acharya, S., Baliga, B. J., Battacharya, S., … Lal, R. (2017). Applications and characterization of four quadrant GaN switch. 2017 ieee energy conversion congress and exposition (ecce), 2017-January, 1967–1974. https://doi.org/10.1109/ecce.2017.8096397 Sung, W., & Baliga, B. J. (2017). On Developing One-Chip Integration of 1.2 kV SiC MOSFET and JBS Diode (JBSFET). IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, 64(10), 8206–8212. https://doi.org/10.1109/tie.2017.2696515 Cai, S., Bodle, J. C., Mathieu, P. S., Amos, A., Hamouda, M., Bernacki, S., … Loboa, E. G. (2017). Primary cilia are sensors of electrical field stimulation to induce osteogenesis of human adipose-derived stem cells. FASEB JOURNAL, 31(1), 346–355. https://doi.org/10.1096/fj.201600560r Han, K., Baliga, B. J., & Sung, W. (2017). Split-gate 1.2-kV 4H-SiC MOSFET: Analysis and experimental validation. IEEE Electron Device Letters, 38(10), 1437–1440. https://doi.org/10.1109/led.2017.2738616 Sung, W., & Baliga, B. J. (2016). A Near Ideal Edge Termination Technique for 4500V 4H-SiC Devices: The Hybrid Junction Termination Extension. IEEE ELECTRON DEVICE LETTERS, 37(12), 1609–1612. https://doi.org/10.1109/led.2016.2623423 Sung, W., Baliga, B. J., & Huang, A. Q. (2016). Area-Efficient Bevel-Edge Termination Techniques for SiC High-Voltage Devices. IEEE TRANSACTIONS ON ELECTRON DEVICES, 63(4), 1630–1636. https://doi.org/10.1109/ted.2016.2532602 Sung, W., & Baliga, B. J. (2016). Monolithically Integrated 4H-SiC MOSFET and JBS Diode (JBSFET) Using a Single Ohmic/Schottky Process Scheme. IEEE ELECTRON DEVICE LETTERS, 37(12), 1605–1608. https://doi.org/10.1109/led.2016.2618720 Baliga, B. J. (2016). SIC power devices: From conception to social impact (invited paper). 2016 46th european solid-state device research conference (essderc), 192–197. https://doi.org/10.1109/essderc.2016.7599619 Sung, W., Huang, A. Q., & Baliga, B. J. (2015). Bevel Junction Termination Extension-A New Edge Termination Technique for 4H-SiC High-Voltage Devices. IEEE ELECTRON DEVICE LETTERS, 36(6), 594–596. https://doi.org/10.1109/led.2015.2427654 Vechalapu, K., Tripathi, A., Mainali, K., Baliga, B. J., & Bhattacharya, S. (2015). Soft switching characterization of 15 kV SiC n-IGBT and performance evaluation for high power converter applications. 2015 IEEE Energy Conversion Congress and Exposition, ECCE 2015, 4151–4158. https://doi.org/10.1109/ecce.2015.7310246 Sung, W., Huang, A. Q., Baliga, B. J., Ji, I., Ke, H., & Hopkins, D. C. (2015). The first demonstration of symmetric blocking SiC gate turn-off (GTO) thyristor. 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 257–260. https://doi.org/10.1109/ispsd.2015.7123438 Kadavelugu, A., Bhattcharya, S., Baliga, B. J., Ryu, S. H., Grider, D., & Palmour, J. (2014). Zero voltage switching characterization of 12 kV SiC N-IGBTs. Proceedings of the international symposium on power semiconductor, 350–353. https://doi.org/10.1109/ispsd.2014.6856048 Baliga, B. J. (2013). Analytical Modeling of IGBTs: Challenges and Solutions. IEEE TRANSACTIONS ON ELECTRON DEVICES, 60(2), 535–543. https://doi.org/10.1109/ted.2012.2222415 Baliga, B. J. (2013). [Review of Gallium nitride devices for power electronic applications]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 28(7). https://doi.org/10.1088/0268-1242/28/7/074011 Huang, X., Wang, G. Y., Li, Y. S., Huang, A. Q., & Baliga, B. J. (2013). Short-circuit capability of 1200V SiC MOSFET and JFET for fault protection. 2013 twenty-eighth annual ieee applied power electronics conference and exposition (apec 2013), 197–200. https://doi.org/10.1109/apec.2013.6520207 Huang, X., Baliga, B. J., Huang, A. Q., Suvorov, A., Capell, C., Cheng, L., & Agarwal, A. (2013). SiC Symmetric Blocking Terminations Using Orthogonal Positive Bevel Termination and Junction Termination Extension. Proceedings of the international symposium on power semiconductor, 179–182. https://doi.org/10.1109/ispsd.2013.6694475 Sung, W., Van Brunt, E., Baliga, B. J., & Huang, A. Q. (2012). A Comparative Study of Gate Structures for 9.4-kV4H-SiC Normally On Vertical JFETs. IEEE TRANSACTIONS ON ELECTRON DEVICES, 59(9), 2417–2423. https://doi.org/10.1109/ted.2012.2203337 Sung, W., Baliga, B. J., & Huang, A. Q. (2012). A Novel 4H-SiC Fault Isolation Device with Improved Trade-off between On-state Voltage Drop and Short Circuit SOA. SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, Vol. 717-720, pp. 1045–1048. https://doi.org/10.4028/www.scientific.net/msf.717-720.1045 Huang, X., Van Brunt, E., Baliga, B. J., & Huang, A. Q. (2012). Orthogonal Positive-Bevel Termination for Chip-Size SiC Reverse Blocking Devices. IEEE ELECTRON DEVICE LETTERS, 33(11), 1592–1594. https://doi.org/10.1109/led.2012.2215003 Sung, W., Van Brunt, E., Baliga, B. J., & Huang, A. Q. (2011). A New Edge Termination Technique for High-Voltage Devices in 4H-SiC-Multiple-Floating-Zone Junction Termination Extension. IEEE ELECTRON DEVICE LETTERS, 32(7), 880–882. https://doi.org/10.1109/led.2011.2144561 Ozbek, A. M., & Baliga, B. J. (2011). Finite-Zone Argon Implant Edge Termination for High-Voltage GaN Schottky Rectifiers. IEEE ELECTRON DEVICE LETTERS, 32(10), 1361–1363. https://doi.org/10.1109/led.2011.2162221 Ozbek, A. M., & Baliga, B. J. (2011). Planar Nearly Ideal Edge-Termination Technique for GaN Devices. IEEE ELECTRON DEVICE LETTERS, 32(3), 300–302. https://doi.org/10.1109/led.2010.2095825 Ozbek, A. M., & Baliga, B. J. (2011, August). Tunneling coefficient for GaN Schottky barrier diodes. https://doi.org/10.1016/j.sse.2011.04.016 Sung, W., Huang, A. Q., & Baliga, B. J. (2010). A novel 4H-SiC IGBT structure with improved trade-off between short circuit capability and on-state voltage drop. Proceedings of the international symposium on power semiconductor, 217–220. Baliga, B. J. (2009). Advanced power rectifier concepts. https://doi.org/10.1007/978-0-387-75589-2 Sung, W., Wang, J., Huang, A. Q., & Baliga, B. J. (2009). Design and investigation of frequency capability of 15kV 4H-SiC IGBT. 2009 21ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, pp. 271–274. https://doi.org/10.1109/ispsd.2009.5158054 Huang, A. Q., & Baliga, J. (2009). FREEDM System: Role of Power Electronics and Power Semiconductors in Developing an Energy Internet. 2009 21ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, pp. 9–12. https://doi.org/10.1109/ispsd.2009.5157988 Wang, J., Huang, A. Q., & Baliga, B. J. (2009). RBSOA Study of High Voltage SiC Bipolar Devices. 2009 21ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, pp. 263–266. https://doi.org/10.1109/ispsd.2009.5158052 Wang, J., Huang, A. Q., Sung, W., Liu, Y., & Baliga, B. J. (2009). Smart Grid Technologies. IEEE INDUSTRIAL ELECTRONICS MAGAZINE, 3(2), 16–23. https://doi.org/10.1109/MIE.2009.932583 Baliga, B. J. (2008). Fundamentals of power semiconductor devices. https://doi.org/10.1007/978-0-387-47314-7 Baliga, B. J. (2001). Methods of forming power semiconductor devices having T-shaped gate electrodes. Washington, DC: U.S. Patent and Trademark Office. Baliga, B. J. (2001). Silicon carbide power devices having trench-based silicon carbide charge coupling regions therein. Washington, DC: U.S. Patent and Trademark Office. Baliga, B. J. (2001). The future of power semiconductor device technology. PROCEEDINGS OF THE IEEE, 89(6), 822–832. https://doi.org/10.1109/5.931471 Baliga, B. J. (2000). Bidirectional silicon carbide power devices having voltage supporting regions therein for providing improved blocking voltage capability. Washington, DC: U.S. Patent and Trademark Office. Sawant, S., & Baliga, B. J. (2000). Current saturation control in silicon emitter switched thyristors. SOLID-STATE ELECTRONICS, 44(1), 133–142. https://doi.org/10.1016/S0038-1101(99)00217-8 Baliga, B. J. (2000). Power semiconductor devices that utilize buried insulating regions to achieve higher than parallel-plane breakdown voltages. Washington, DC: U.S. Patent and Trademark Office. Bobde, M. D., & Baliga, B. J. (2000). Silicon planar ACCUFET: improved power MOSFET structure. ELECTRONICS LETTERS, 36(10), 913–915. https://doi.org/10.1049/el:20000647 Sawant, S., Sridhar, S., & Baliga, B. J. (1999). An experimental analysis of the dual gate emitter switched thyristor (DG-EST). SOLID-STATE ELECTRONICS, 43(10), 1901–1908. https://doi.org/10.1016/S0038-1101(99)00148-3 Shenoy, P. M., & Baliga, B. J. (1999). Analysis and optimization of the planar 6H-SiC ACCUFET. SOLID-STATE ELECTRONICS, 43(2), 213–220. https://doi.org/10.1016/S0038-1101(98)00244-5 Thapar, N., & Baliga, B. J. (1999). Enhancing the maximum controllable current density of the accumulation channel driven bipolar transistor. SOLID-STATE ELECTRONICS, 43(2), 395–402. https://doi.org/10.1016/S0038-1101(98)00255-X Chilukuri, R. K., Shenoy, P. M., & Baliga, B. J. (1999). High-temperature operation of SiC planar ACCUFET. IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, Vol. 35, pp. 1458–1462. https://doi.org/10.1109/28.806062 Baliga, B. J. (1999). Methods of forming silicon carbide semiconductor devices having buried silicon carbide conduction barrier layers therein. Washington, DC: U.S. Patent and Trademark Office. Ramamurthy, A., Sawant, S., & Baliga, B. J. (1999). Modeling the [dV/dt] of the IGBT during inductive turn off. IEEE TRANSACTIONS ON POWER ELECTRONICS, 14(4), 601–606. https://doi.org/10.1109/63.774195 Baliga, B. J. (1999). Power semiconductor devices having improved high frequency switching and breakdown characteristics. Washington, DC: U.S. Patent and Trademark Office. Baliga, B. J. (1999). Power semiconductor devices having trench-based gate electrodes and field plates. Washington, DC: U.S. Patent and Trademark Office. Baliga, B. J. (1999). Semiconductor switching devices having buried gate electrodes and methods of forming same. Washington, DC: U.S. Patent and Trademark Office. Baliga, B. J. (1999). SiC promises higher power MOS devices. Electronic Design, 47(24), 27. Raghunathan, R., & Baliga, B. J. (1999). Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC. SOLID-STATE ELECTRONICS, 43(2), 199–211. https://doi.org/10.1016/S0038-1101(98)00248-2 Mahalingam, S., & Baliga, B. J. (1999). The graded doped trench MOS Barrier Schottky rectifier: a low forward drop high voltage rectifier. SOLID-STATE ELECTRONICS, 43(1), 1–9. https://doi.org/10.1016/S0038-1101(98)00250-0 Thapar, N., & Baliga, B. J. (1998). An experimental evaluation of the on-state performance of trench IGBT designs. SOLID-STATE ELECTRONICS, 42(5), 771–776. https://doi.org/10.1016/S0038-1101(97)00301-8 Yamazaki, T., & Baliga, B. J. (1998). Analysis and suppression of latch-up during IGBT mode of DG-BRT operation. SOLID-STATE ELECTRONICS, 42(3), 393–399. https://doi.org/10.1016/S0038-1101(97)00215-3 Thapar, N., & Baliga, B. J. (1998). Analytical model for the threshold voltage of Accumulation Channel MOS-Gate devices. SOLID-STATE ELECTRONICS, 42(11), 1975–1979. https://doi.org/10.1016/S0038-1101(98)00179-8 Singh, R., & Baliga, B. J. (1998). Cryogenic operation of silicon power devices. https://doi.org/10.1007/978-1-4615-5751-7 Nagapudi, V., Sunkavalli, R., & Baliga, B. J. (1998). Effect of collector structure on the FBSOA of the dielectrically-isolated LIGBT. IEEE TRANSACTIONS ON ELECTRON DEVICES, 45(5), 1155–1161. https://doi.org/10.1109/16.669579 Sawant, S., & Baliga, B. J. (1998). Improved DC-EST structure with diode diverter. ELECTRONICS LETTERS, 34(13), 1358–1360. https://doi.org/10.1049/el:19980967 Sridevan, S., & Baliga, B. J. (1998). Lateral N-channel inversion mode 4H-SiC MOSFET's. IEEE ELECTRON DEVICE LETTERS, 19(7), 228–230. https://doi.org/10.1109/55.701425 Raghunathan, R., & Baliga, B. J. (1998). P-type 4H and 6H-SiC high-voltage Schottky barrier diodes. IEEE ELECTRON DEVICE LETTERS, 19(3), 71–73. https://doi.org/10.1109/55.661168 Mehrotra, M., & Baliga, B. J. (1998). Reverse blocking lateral MOS-gated switches for AC power control applications. SOLID-STATE ELECTRONICS, 42(4), 573–579. https://doi.org/10.1016/S0038-1101(97)00286-4 Raghunathan, R., & Baliga, B. J. (1998). Role of defects in producing negative temperature dependence of breakdown voltage in SiC. APPLIED PHYSICS LETTERS, 72(24), 3196–3198. https://doi.org/10.1063/1.121591 Sridevan, S., McLarty, P. K., & Baliga, B. J. (1998). Silicon carbide switching devices having near ideal breakdown voltage capability and ultralow on-state resistance. Washington, DC: U.S. Patent and Trademark Office. Thapar, N. I., Shenoy, P. M., & Baliga, B. J. (1998). Static-induction transistors having heterojunction gates and methods of forming same. Washington, DC: U.S. Patent and Trademark Office. Venkataraghavan, P., & Baliga, B. J. (1998). The dV/dt capability of MOS-gated thyristors. IEEE TRANSACTIONS ON POWER ELECTRONICS, 13(4), 660–666. https://doi.org/10.1109/63.704134 Sunkavalli, R., & Baliga, B. J. (1997). Analysis of on-state carrier distribution in the DI-LIGBT. SOLID-STATE ELECTRONICS, 41(5), 733–738. https://doi.org/10.1016/S0038-1101(96)00247-X Sridhar, S., & Baliga, B. J. (1997). Current saturation mechanism and FBOSA of the SIMEST. SOLID-STATE ELECTRONICS, 41(4), 561–566. https://doi.org/10.1016/S0038-1101(96)00202-X Baliga, B. J., & Thapar, N. I. (1997). Depleted base transistor with high forward voltage blocking capability. Washington, DC: U.S. Patent and Trademark Office. Sunkavalli, R., Baliga, B. J., & Tamba, A. (1997). Dielectrically isolated lateral merged PiN Schottky (LMPS) diodes. IEEE TRANSACTIONS ON ELECTRON DEVICES, 44(11), 2011–2016. https://doi.org/10.1109/16.641373 Shenoy, P. M., & Baliga, B. J. (1997). High voltage P+ polysilicon/N- 6H-SiC heterojunction diodes. ELECTRONICS LETTERS, 33(12), 1086–1087. https://doi.org/10.1049/el:19970678 Alok, D., & Baliga, B. J. (1997). Kinetics of enhanced thermal oxidation of silicon carbide using amorphization by ion implantation. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 144(3), 1135–1137. https://doi.org/10.1149/1.1837545 Baliga, B. J., & Alok, D. (1997). Methods of fabricating voltage breakdown resistant monocrystalline silicon carbide semiconductor devices. Washington, DC: U.S. Patent and Trademark Office. Baliga, B. J. (1997). Methods of forming silicon carbide semiconductor devices having buried silicon carbide conduction barrier layers therein. Washington, DC: U.S. Patent and Trademark Office. Sridhar, S., & Baliga, B. J. (1997). Output characteristics of the dual channel EST. SOLID-STATE ELECTRONICS, 41(8), 1133–1138. https://doi.org/10.1016/S0038-1101(97)00036-1 Sridhar, S., & Baliga, B. J. (1997). SIMFCT: A MOS-gated FCT with high voltage-current saturation. IEEE TRANSACTIONS ON ELECTRON DEVICES, 44(11), 2017–2021. https://doi.org/10.1109/16.641374 Baliga, B. J. (1997). Schottky barrier rectifiers and methods of forming same. Washington, DC: U.S. Patent and Trademark Office. Alok, D., & Baliga, B. J. (1997). SiC device edge termination using finite area argon implantation. IEEE TRANSACTIONS ON ELECTRON DEVICES, 44(6), 1013–1017. https://doi.org/10.1109/16.585559 Thapar, N., & Baliga, B. J. (1997). The accumulation channel driven bipolar transistor (ACBT). IEEE ELECTRON DEVICE LETTERS, 18(5), 178–180. https://doi.org/10.1109/55.568754 Baliga, B. J. (1997). Vertical field effect transistors having improved breakdown voltage capability and low on-state resistance. Washington, DC: U.S. Patent and Trademark Office. Baliga, B. J. (1996). Silicon carbide semiconductor devices having buried silicon carbide conduction barrier layers therein. Washington, DC: U.S. Patent and Trademark Office. Baliga, B. J. (1995). Insulated gate bipolar transistor with reduced susceptibility to parasitic latch-up. Washington, DC: U.S. Patent and Trademark Office. Baliga, B. J. (1995). Multifunctional semiconductor switching device having gate-controlled regenerative and non-regenerative conduction modes, and method of operating same. Washington, DC: U.S. Patent and Trademark Office. Baliga, B. J. (1995). Silicon carbide switching device with rectifying-gate. Washington, DC: U.S. Patent and Trademark Office. Shekar, M. S., & Baliga, B. J. (1994). Emitter switched thyristor without parasitic thyristor latch-up susceptibility. Washington, DC: U.S. Patent and Trademark Office. Shekar, M. S., & Baliga, B. J. (1994). MOS gated thyristor having on-state current saturation capability. Washington, DC: U.S. Patent and Trademark Office. BHATNAGAR, M., & BALIGA, B. J. (1993). COMPARISON OF 6H-SIC, 3C-SIC, AND SI FOR POWER DEVICES. IEEE TRANSACTIONS ON ELECTRON DEVICES, 40(3), 645–655. https://doi.org/10.1109/16.199372 Baliga, B. J. (1993). Silicon carbide power MOSFET with floating field ring and floating field plate. Washington, DC: U.S. Patent and Trademark Office. Baliga, B. J. (1991). Integrated circuit power device with automatic removal of defective devices and method of fabricating same. Washington, DC: U.S. Patent and Trademark Office. Baliga, B. J. Advanced power MOSFET concepts. New York: Springer. Baliga, B. J. Asymmetrical field controlled thyristor. Washington, DC: U.S. Patent and Trademark Office. Baliga, B. J. Base resistance controlled thyristor with integrated single-polarity gate control. Washington, DC: U.S. Patent and Trademark Office. Baliga, B. J. Base resistance controlled thyristor with single-polarity turn-on and turn-off control. Washington, DC: U.S. Patent and Trademark Office. Mehrotra, M., & Baliga, B. J. Bidirectional AC switching device with MOS-gated turn-on and turn-off control. Washington, DC: U.S. Patent and Trademark Office. Shekar, M. S., Baliga, B. J., & Korec, J. Dual-channel emitter switched thyristor with trench gate. Washington, DC: U.S. Patent and Trademark Office. Baliga, B. J. Electric field-controlled semiconductor device. Washington, DC: U.S. Patent and Trademark Office. Baliga, B. J. Emitter switched thyristor with buried dielectric layer. Washington, DC: U.S. Patent and Trademark Office. Baliga, B. J. Field-controlled bipolar transistor. Washington, DC: U.S. Patent and Trademark Office. Baliga, B. J., Houston, D. E., & Krishna, S. Gate modulated bipolar transistor. Washington, DC: U.S. Patent and Trademark Office. Baliga, B. J. Gated base controlled thyristor. Washington, DC: U.S. Patent and Trademark Office. Baliga, B. J. High voltage silicon carbide MESFETs and methods of fabricating same. Washington, DC: U.S. Patent and Trademark Office. Baliga, B. J. How the super-transistor works. In The solid-state century: The past, present, and future of the transistor (pp. 34–41). New York: Scientific American, Inc. Baliga, B. J., & Venkatraman, P. Integrated circuit power device with external disabling of defective devices and method of fabricating same. Washington, DC: U.S. Patent and Trademark Office. Baliga, B. J. Integrated circuit power device with transient responsive current limiting means. Washington, DC: U.S. Patent and Trademark Office. Nandakumar, M., & Baliga, B. J. Integrated multicelled semiconductor switching device for high current applications. Washington, DC: U.S. Patent and Trademark Office. Baliga, B. J., & Korec, J. Latch-up resistant bipolar transistor with trench IGFET and buried collector. Washington, DC: U.S. Patent and Trademark Office. Shekar, M. S., & Baliga, B. J. MOS gated thyristor with remote turn-off electrode. Washington, DC: U.S. Patent and Trademark Office. Tu, S.-H. L., & Baliga, B. J. Merged P-I-N/Schottky power rectifier having extended P-I-N junction. Washington, DC: U.S. Patent and Trademark Office. Baliga, B. J., Alok, D., & Bhatnagar, M. Method for forming a p-n junction in silicon carbide. Washington, DC: U.S. Patent and Trademark Office. Baliga, B. J. Method for forming an oxide-filled trench in silicon carbide. Washington, DC: U.S. Patent and Trademark Office. Baliga, B. J. Method of fabricating high voltage silicon carbide MESFETs. Washington, DC: U.S. Patent and Trademark Office. Baliga, B. J., & Bhatnagar, M. Method of fabricating silicon carbide field effect transistor. Washington, DC: U.S. Patent and Trademark Office. Baliga, B. J., & Alok, D. Method of forming trenches in monocrystalline silicon carbide. Washington, DC: U.S. Patent and Trademark Office. Sung, W. J., Han, K. J., & Baliga, B. J. Optimization of the JFET region of 1.2kV SiC MOSFETs for improved high frequency figure of merit (HF-FOM). 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WIPDA), 238–241. Baliga, B. J. Power devices. In Modern semiconductor device physics (pp. 183–252). New York: Wiley. Tu, S.-H. L., & Baliga, B. J. Schottky barrier rectifier including schottky barrier regions of differing barrier heights. Washington, DC: U.S. Patent and Trademark Office. Mehrotra, M., & Baliga, B. J. Schottky barrier rectifier with MOS trench. Washington, DC: U.S. Patent and Trademark Office. Temple, V. A. K., & Baliga, B. J. Self-protection against breakover turn-on failure in thyristors through selective base lifetime control. Washington, DC: U.S. Patent and Trademark Office. Baliga, B. J. Silicon RF power MOSFETS. Singapore; Hackensack, NJ: World Scientific. Baliga, B. J. Silicon carbide field effect device. Washington, DC: U.S. Patent and Trademark Office. Baliga, B. J., & Bhatnagar, M. Silicon carbide field effect transistor. Washington, DC: U.S. Patent and Trademark Office. Baliga, B. J. Trench gate lateral MOSFET. Washington, DC: U.S. Patent and Trademark Office. Shekar, M. S., Nandakumar, M., & Baliga, B. J. Unit cell arrangement for emitter switched thyristor with base resistance control. Washington, DC: U.S. Patent and Trademark Office. Baliga, B. J., & Alok, D. Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices. Washington, DC: U.S. Patent and Trademark Office.