@article{yang_lu_cheng_wang_zhang_yang_lu_2020, title={Identification of Efficient Single-Atom Catalysts Based on V2CO2 MXene by ab Initio Simulations}, volume={124}, ISSN={["1932-7455"]}, DOI={10.1021/acs.jpcc.9b09912}, abstractNote={The first-principles simulations are used to search and identify a potential candidate for the single-atom catalysts (SACs). By exploring the stability, clustering tendency, and catalytic activity ...}, number={7}, journal={JOURNAL OF PHYSICAL CHEMISTRY C}, author={Yang, Xinwei and Lu, Zhansheng and Cheng, Cheng and Wang, Yan and Zhang, Xilin and Yang, Zongxian and Lu, Wenchang}, year={2020}, month={Feb}, pages={4090–4100} }
 @article{lucovsky_zeller_cheng_zhang_2014, title={Remote plasma-processing (RPP), medium range order, and precursor sites for dangling bond defects in "amorphous-Si(H)" alloys: Photovoltaic and thin film transistor devices}, volume={242}, ISSN={["0257-8972"]}, DOI={10.1016/j.surfcoat.2013.06.104}, abstractNote={Remote plasma processing (RPP) provides pathways to the formation of photovoltaic (PV) and thin-film-transistor (TFT) devices that include buried interfaces. This is made possible by separate and independent control of (i) plasma excited O- and N-atom deposition precursors in a up-stream plasma chamber, combined with (ii) down-stream injection of Si- and Ge-atoms with control gas flow rates providing control of buried interface bonding at monolayer levels. Devices with intrinsic, B p-type and P n-type “a-Si(H)” & “a-Si,Ge(H)” layers require 10% bonded H in monolayer (SiH arrangements) and deposition and/or annealing at temperatures between 240 and 275 °C. Deposition from SiH4 with either PH3 or B2H6 dopant gasses provides spectrally reflecting films which can be annealed yielding fine-grain films for gate, or source and drain regions for TFTs or FETs.}, journal={SURFACE & COATINGS TECHNOLOGY}, author={Lucovsky, G. and Zeller, D. J. and Cheng, C. and Zhang, Y.}, year={2014}, month={Mar}, pages={183–186} }