@article{gittard_miller_jin_martin_boehm_chisholm_stafslien_daniels_cilz_monteiro-riviere_et al._2011, title={Deposition of antimicrobial coatings on microstereolithography-fabricated microneedles}, volume={63}, ISSN={["1543-1851"]}, url={http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000291610800011&KeyUID=WOS:000291610800011}, DOI={10.1007/s11837-011-0093-3}, number={6}, journal={JOM}, author={Gittard, Shaun D. and Miller, Philip R. and Jin, Chunming and Martin, Timothy N. and Boehm, Ryan D. and Chisholm, Bret J. and Stafslien, Shane J. and Daniels, Justin W. and Cilz, Nicholas and Monteiro-Riviere, Nancy A. and et al.}, year={2011}, month={Jun}, pages={59–68} }
 @article{narayan_adiga_pellin_curtiss_hryn_stafslien_chisholm_shih_shih_lin_et al._2010, title={Atomic layer deposition-based functionalization of materials for medical and environmental health applications}, volume={368}, ISSN={["1471-2962"]}, url={http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000275810800010&KeyUID=WOS:000275810800010}, DOI={10.1098/rsta.2010.0011}, abstractNote={
            Nanoporous alumina membranes exhibit high pore densities, well-controlled and uniform pore sizes, as well as straight pores. Owing to these unusual properties, nanoporous alumina membranes are currently being considered for use in implantable sensor membranes and water purification membranes. Atomic layer deposition is a thin-film growth process that may be used to modify the pore size in a nanoporous alumina membrane while retaining a narrow pore distribution. In addition, films deposited by means of atomic layer deposition may impart improved biological functionality to nanoporous alumina membranes. In this study, zinc oxide coatings and platinum coatings were deposited on nanoporous alumina membranes by means of atomic layer deposition. PEGylated nanoporous alumina membranes were prepared by self-assembly of 1-mercaptoundec-11-yl hexa(ethylene glycol) on platinum-coated nanoporous alumina membranes. The pores of the PEGylated nanoporous alumina membranes remained free of fouling after exposure to human platelet-rich plasma; protein adsorption, fibrin networks and platelet aggregation were not observed on the coated membrane surface. Zinc oxide-coated nanoporous alumina membranes demonstrated activity against two waterborne pathogens,
            Escherichia coli
            and
            Staphylococcus aureus
            . The results of this work indicate that nanoporous alumina membranes may be modified using atomic layer deposition for use in a variety of medical and environmental health applications.
          }, number={1917}, journal={PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES}, author={Narayan, Roger J. and Adiga, Shashishekar P. and Pellin, Michael J. and Curtiss, Larry A. and Hryn, Alexander J. and Stafslien, Shane and Chisholm, Bret and Shih, Chun-Che and Shih, Chun-Ming and Lin, Shing-Jong and et al.}, year={2010}, month={Apr}, pages={2033–2064} }
 @article{wei_nori_jin_narayan_narayan_ponarin_smirnov_2010, title={Mott transition in Ga-doped MgxZn1-xO: A direct observation}, volume={171}, ISSN={["1873-4944"]}, url={http://www.scopus.com/inward/record.url?eid=2-s2.0-77953133966&partnerID=MN8TOARS}, DOI={10.1016/j.mseb.2010.03.078}, abstractNote={This paper reports the direct evidence for Mott transition in Ga-doped MgxZn1−xO thin films. Highly transparent Ga-doped MgxZn1−xO thin films were grown on c-plane sapphire substrates using pulsed laser deposition. 0.1 at.%, 0.5 at.% and 1 at.% Ga-doped Mg0.1Zn0.9O films were selected for resistivity measurements in the temperature range from 250 K to 40 mK. The 0.1 at.% Ga-doped Mg0.1Zn0.9O thin film showed typical insulator-like behavior and the 1 at.% Ga-doped Mg0.1Zn0.9O thin film showed typical metal-like behavior. The 0.5 at.% Ga-doped Mg0.1Zn0.9O film showed increasing resistivity with decreasing temperature; resistivity was saturated with a value of 1.15 × 10−2 Ω cm at 40 mK, which is characteristic of the metal–insulator transition region. Temperature-dependent conductivity σ(T) in the low temperature range revealed that the electron-electron scattering is the dominant dephasing mechanism. The inelastic scattering time is found to vary as T−3/2.}, number={1-3}, journal={MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS}, publisher={Elsevier BV}, author={Wei, Wei and Nori, Sudhakar and Jin, Chunming and Narayan, Jagdish and Narayan, Roger J. and Ponarin, Dmtri and Smirnov, Alex}, year={2010}, month={Jul}, pages={90–92} }
 @article{mal_nori_jin_narayan_nellutla_smirnov_prater_2010, title={Reversible room temperature ferromagnetism in undoped zinc oxide: Correlation between defects and physical properties}, volume={108}, number={7}, journal={Journal of Applied Physics}, author={Mal, S. and Nori, S. and Jin, C. M. and Narayan, J. and Nellutla, S. and Smirnov, A. I. and Prater, J. T.}, year={2010} }
 @article{aggarwal_nori_jin_pant_trichy_kumar_narayan_narayan_2009, title={Magnetic properties and their dependence on deposition parameters of Co/Al2O3 multilayers grown by pulsed laser deposition}, volume={57}, ISSN={["1359-6454"]}, DOI={10.1016/j.actamat.2009.01.018}, abstractNote={Co/Al2O3 multilayered thin films were grown on Si (111) substrates by pulsed laser deposition (PLD) at temperatures from room temperature (RT) to 600 °C. The Co/Al2O3 multilayered thin film grown at RT contains continuous cobalt layers in alumina matrices, with no evidence of island formation. On the other hand, cobalt showed a tendency to form islands in alumina matrices for growth temperatures in the range of 300–600 °C. All the Co/Al2O3 multilayered thin films showed ferromagnetic behavior up to RT. It was observed that variations in the deposition parameters can significantly influence the magnetic properties of Co/Al2O3 multilayers. Depending on the temperature and pulse rate, RT coercivities in the 50–300 Oe range were observed. Films deposited at 600 °C using a laser pulse rate of 10 Hz exhibited a decrease of coercivity with increasing measurement temperature. On the other hand, films deposited at 600 °C using a reduced pulse rate of 2 Hz demonstrated an “anomalous” relationship between low-temperature coercivity and temperature. In these films, coercivity exhibited a weak tendency to increase with temperature. Squareness (Mr/Ms) of the hysteresis loops and its dependence on the temperature was also shown to be strongly affected by the deposition parameters. These observations have been rationalized on the basis of two competing magnetic anisotropies that act along different directions in the material.}, number={6}, journal={ACTA MATERIALIA}, author={Aggarwal, Ravi and Nori, Sudhakar and Jin, Chunming and Pant, Punam and Trichy, Gopinath R. and Kumar, Dhananjay and Narayan, J. and Narayan, Roger J.}, year={2009}, month={Apr}, pages={2040–2046} }
 @article{wei_jin_narayan_narayan_2009, title={Optical and electrical properties of bandgap engineered gallium-doped MgxZn1-xO films}, volume={149}, ISSN={["1879-2766"]}, DOI={10.1016/j.ssc.2009.06.021}, abstractNote={In this study, the optical and electrical properties of heavily gallium-doped MgxZn1−xO films were investigated. Films were epitaxially grown on c-plane sapphire substrates using pulsed laser deposition. Film transparency was shown to be greater than 90% in the visible spectrum. Absorption was shown to be extended to lower wavelengths in films with higher magnesium concentration values. Although transparency in the ultraviolet wavelength range was improved, conductivity was decreased. In MgxZn1−xO films with 0.5 at.% gallium, resistivity was increased from 1.9×10−3Ωcm to 3.62×10−2Ωcm as the magnesium concentration was increased from five atomic percent to fifteen atomic percent. These efforts will facilitate the development of zinc oxide-based ultraviolet–blue light emitting diodes, ultraviolet–blue light laser diodes, and other optoelectronic devices.}, number={39-40}, journal={SOLID STATE COMMUNICATIONS}, author={Wei, Wei and Jin, Chunming and Narayan, Jagdish and Narayan, Roger J.}, year={2009}, month={Oct}, pages={1670–1673} }
 @article{gittard_narayan_jin_ovsianikov_chichkov_monteiro-riviere_stafslien_chisholm_2009, title={Pulsed laser deposition of antimicrobial silver coating on Ormocer (R) microneedles}, volume={1}, ISSN={["1758-5090"]}, url={http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000278118300001&KeyUID=WOS:000278118300001}, DOI={10.1088/1758-5082/1/4/041001}, abstractNote={One promising option for transdermal delivery of protein- and nucleic acid-based pharmacologic agents involves the use of microneedles. However, microneedle-generated pores may allow microorganisms to penetrate the stratum corneum layer of the epidermis and cause local or systemic infection. In this study, microneedles with antimicrobial functionality were fabricated using two-photon polymerization–micromolding and pulsed laser deposition. The antibacterial activity of the silver-coated organically modified ceramic (Ormocer®) microneedles was demonstrated using an agar diffusion assay. Human epidermal keratinocyte viability on the Ormocer® surfaces coated with silver was similar to that on uncoated Ormocer® surfaces. This study indicates that coating microneedles with silver thin films using pulsed laser deposition is a useful and novel approach for creating microneedles with antimicrobial functionality.}, number={4}, journal={BIOFABRICATION}, author={Gittard, S. D. and Narayan, R. J. and Jin, C. and Ovsianikov, A. and Chichkov, B. N. and Monteiro-Riviere, N. A. and Stafslien, S. and Chisholm, B.}, year={2009}, month={Dec} }
 @article{jin_wei_zhou_yang_narayan_2008, title={Epitaxial growth and Ohmic contacts in MgxZn1-xO/TiN/Si(111) heterostructures}, volume={93}, ISSN={["1077-3118"]}, DOI={10.1063/1.3054347}, abstractNote={In this work, the electronic properties of Mg0.1Zn0.9O∕TiN∕Si(111) heterostructures processed using pulsed laser deposition were examined. X-ray diffraction and transmission electron microscopy studies demonstrated epitaxial growth of the titanium nitride buffer layer and the Mg0.1Zn0.9O thin film. Transmission electron microscopy demonstrated a thin (∼5nm) spinel layer along the magnesium zinc oxide/titanium nitride interface. Current-voltage measurements revealed Ohmic contact behavior through the magnesium zinc oxide/titanium nitride interface. These results suggest that the titanium nitride buffer layer in the MgxZn1−xO∕TiN∕Si(111) heterostructure provides a buffer layer for integrating magnesium zinc oxide thin films with silicon substrates, which both enable epitaxial growth and serve as an Ohmic electrode for the magnesium zinc oxide thin film.}, number={25}, journal={APPLIED PHYSICS LETTERS}, author={Jin, Chunming and Wei, Wei and Zhou, Honghui and Yang, Tsung-Han and Narayan, Roger J.}, year={2008}, month={Dec} }
 @article{aggarwal_jin_pant_narayan_narayan_2008, title={Growth of biepitaxial zinc oxide thin films on silicon (100) using yttria-stabilized zirconia buffer layer}, volume={93}, ISSN={["0003-6951"]}, DOI={10.1063/1.3050529}, abstractNote={In this work, an approach for integrating zinc oxide thin films with Si(100) substrates using an epitaxial tetragonal yttria-stabilized zirconia buffer layer is reported. Selected area electron diffraction measurements revealed the following epitaxial relationship: [110]YSZ∥[100]Si and (001)YSZ∥(001)Si. X-ray diffraction studies demonstrated that subsequent growth of the zinc oxide thin film on the yttria-stabilized zirconia buffer layer occurred with the following epitaxial relationship: (0002)ZnO∥(001)YSZ. The full width at half maximum value for the (0002) peak of zinc oxide was small (∼0.16°), which indicated good crystalline quality. Transmission electron microscopy revealed that the zinc oxide thin film grew epitaxially on an yttria-stabilized zirconia buffer layer in two different orientations, where one orientation was rotated by 30° from the other. The orientation relationship in this case was [101¯0]ZnO∥[100]YSZ or [21¯1¯0]ZnO∥[100]YSZ and (0002)ZnO∥(001)YSZ. The biepitaxial growth of the zinc oxide thin film has been explained in the framework of domain matching epitaxy. Optical emission measurements showed a strong excitonic emission peak from the zinc oxide thin film at ∼377 nm. Minimal green band emission in the photoluminescence spectrum indicated that the concentration of point defects was low. Integration of epitaxial zinc oxide thin films with Si(100) substrates is an important step toward developing practical applications of zinc oxide in a variety of optoelectronic devices.}, number={25}, journal={Applied Physics Letters}, author={Aggarwal, Ravi and Jin, Chunming and Pant, Punam and Narayan, Jagdish and Narayan, Roger J.}, year={2008}, month={Dec}, pages={251905} }
 @article{narayan_aggarwal_wei_jin_monteiro-riviere_crombez_shen_2008, title={Mechanical and biological properties of nanoporous carbon membranes}, volume={3}, ISSN={["1748-605X"]}, url={http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000258916500020&KeyUID=WOS:000258916500020}, DOI={10.1088/1748-6041/3/3/034107}, abstractNote={Implantable blood glucose sensors have inadequate membrane–tissue interfaces for long term use. Biofouling and inflammation processes restrict biosensor membrane stability. An ideal biosensor membrane material must prevent protein adsorption and exhibit cell compatibility. In addition, a membrane must exhibit high porosity and low thickness in order to allow the biosensor to respond to analyte fluctuations. In this study, the structural, mechanical and biological properties of nanoporous alumina membranes coated with diamond-like carbon thin films were examined using scanning probe microscopy, nanoindentation and MTT viability assay. We anticipate that this novel membrane material could find use in immunoisolation devices, kidney dialysis membranes and other medical devices encountering biocompatibility issues that limit in vivo function.}, number={3}, journal={BIOMEDICAL MATERIALS}, author={Narayan, Roger J. and Aggarwal, Ravi and Wei, Wei and Jin, Chunming and Monteiro-Riviere, Nancy A. and Crombez, Rene and Shen, Weidian}, year={2008}, month={Sep} }
 @article{jin_nori_wei_aggarwal_kumar_narayan_2008, title={Pulsed Laser Deposition of Nanoporous Cobalt Thin Films}, volume={8}, ISSN={["1533-4899"]}, DOI={10.1166/jnn.2008.483}, abstractNote={Nanoporous cobalt thin films were deposited on anodized aluminum oxide (AAO) membranes at room temperature using pulsed laser deposition. Scanning electron microscopy demonstrated that the nanoporous cobalt thin films retained the monodisperse pore size and high porosity of the anodized
 aluminum oxide substrates. Temperature- and field-dependent magnetic data obtained between 10 K and 350 K showed large hysteresis behavior in these materials. The increase of coercivity values was larger for nanoporous cobalt thin films than for multilayered cobalt/alumina thin films. The
 average diameter of the cobalt nanograins in the nanoporous cobalt thin films was estimated to be ∼5 nm for blocking temperatures near room temperature. These results suggest that pulsed laser deposition may be used to fabricate nanoporous magnetic materials with unusual properties for
 biosensing, drug delivery, data storage, and other technological applications.}, number={11}, journal={JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY}, author={Jin, Chunming and Nori, Sudhakar and Wei, Wei and Aggarwal, Ravi and Kumar, Dhananjay and Narayan, Roger J.}, year={2008}, month={Nov}, pages={6043–6047} }
 @article{jin_zhou_graham_narayan_2007, title={In situ Raman spectroscopy of annealed diamondlike carbon–metal composite films}, volume={253}, ISSN={0169-4332}, url={http://dx.doi.org/10.1016/j.apsusc.2007.01.022}, DOI={10.1016/j.apsusc.2007.01.022}, abstractNote={Diamondlike carbon films and diamondlike carbon–metal composite films may provide increased component reliability, decreased fuel consumption, decreased noise/vibration/harshness (NVH), and decreased lubricant use in next generation automotive components. Raman spectra were obtained for diamondlike carbon, diamondlike carbon–platinum composite films, and diamondlike carbon–gold composite films, which were annealed to a temperature of 523 °C. The Raman spectra for these films were fitted using a two-Gaussian function. The variation of the G-peak position, the D-peak position, and the ID/IG ratio was examined as a function of temperature. The unalloyed diamondlike carbon film demonstrated greater thermal stability than the diamondlike carbon–noble metal composite films. These results suggest that the operating temperatures of the diamondlike carbon-coated automotive components must be kept under careful consideration.}, number={15}, journal={Applied Surface Science}, publisher={Elsevier BV}, author={Jin, C. and Zhou, H. and Graham, S. and Narayan, R.J.}, year={2007}, month={May}, pages={6487–6492} }
 @article{rabiei_thomas_jin_narayan_cuomo_yang_ong_2006, title={A study on functionally graded HA coatings processed using ion beam assisted deposition with in situ heat treatment}, volume={200}, ISSN={["0257-8972"]}, DOI={10.1016/j.surfcoat.2005.09.027}, abstractNote={A new generation of calcium phosphate coatings with less than 1 μm thickness and graded crystallinity through the thickness of the film has been processed using ion beam assisted deposition (IBAD) and in situ heat treatment. Microstructural analysis of the film confirmed a gradual decrease of the grain size and crystallinity towards the surface, leading to nano-scale grains and eventually amorphous layer at the surface. The mechanical properties and adhesion bonding of the film have been evaluated using microscratch and nanoindentation tests and, in general, functionally graded HA films deposited using our IBAD system together with in situ heat treatment demonstrated higher modulus and hardness values than sputter-deposited films with the same thickness as well as those appearing in the literature for sintered HA. Scratch test results of both sets of samples revealed that crack formation is more common in sputter-deposited HA film than in the functionally graded HA film deposited using IBAD and in situ heat treatment. We anticipate that the functionally graded hydroxyapatite films will provide improved tissue–implant interfaces for orthopedic and dental implants.}, number={20-21}, journal={SURFACE & COATINGS TECHNOLOGY}, author={Rabiei, A and Thomas, B and Jin, C and Narayan, R and Cuomo, J and Yang, Y and Ong, JL}, year={2006}, month={May}, pages={6111–6116} }
 @article{narayan_wei_jin_andara_agarwal_gerhardt_shih_shih_lin_su_et al._2006, title={Microstructural and biological properties of nanocrystalline diamond coatings}, volume={15}, ISSN={["1879-0062"]}, DOI={10.1016/j.diamond.2006.08.024}, abstractNote={In this study, the microstructural, mechanical, adhesion, and hemocompatibility properties of nanocrystalline diamond coatings were examined. Microwave plasma chemical vapor deposition (MPCVD) was used to deposit nanocrystalline diamond coatings on silicon (100) substrates. The coating surface consisted of faceted nodules, which exhibited a relatively wide size distribution and an average size of 60 nm. High-resolution transmission electron microscopy demonstrated that these crystals were made up of 2–4 nm rectangular crystallites. Raman spectroscopy and electron diffraction revealed that the coating contained both crystalline and amorphous phases. The microscratch adhesion study demonstrated good adhesion between the coating and the underlying substrate. Scanning electron microscopy and energy dispersive X-ray analysis revealed no crystal, fibrin, protein, or platelet aggregation on the surface of the platelet rich plasma-exposed nanocrystalline diamond coating. This study suggests that nanocrystalline diamond is a promising coating for use in cardiovascular medical devices.}, number={11-12}, journal={DIAMOND AND RELATED MATERIALS}, author={Narayan, R. J. and Wei, W. and Jin, C. and Andara, M. and Agarwal, A. and Gerhardt, R. A. and Shih, Chun-Che and Shih, Chun-Ming and Lin, Shing-Jong and Su, Yea-Yang and et al.}, year={2006}, pages={1935–1940} }
 @article{jin_narayan_2006, title={Structural and optical properties of hexagonal MgxZn1-xO thin films}, volume={35}, ISSN={["1543-186X"]}, DOI={10.1007/BF02692542}, number={5}, journal={JOURNAL OF ELECTRONIC MATERIALS}, author={Jin, Chunming and Narayan, Roger J.}, year={2006}, month={May}, pages={869–876} }
 @article{narayan_hobbs_jin_rabiei_2006, title={The use of functionally gradient materials in medicine}, volume={58}, ISSN={1047-4838 1543-1851}, url={http://dx.doi.org/10.1007/S11837-006-0142-5}, DOI={10.1007/s11837-006-0142-5}, number={7}, journal={JOM}, publisher={Springer Science and Business Media LLC}, author={Narayan, Roger J. and Hobbs, Linn W. and Jin, Chunming and Rabiei, Afsaneh}, year={2006}, month={Jul}, pages={52–56} }
 @article{jin_zhou_wei_narayan_2006, title={Three-dimensional self-organization of crystalline gold nanoparticles in amorphous alumina}, volume={89}, DOI={10.1063/1.2422910}, abstractNote={Multilayered heterostructures containing gold nanoparticles embedded in amorphous alumina matrices were deposited on silicon (001) substrates using pulsed laser deposition. The three-dimensional ordering of gold nanoparticles within these multilayered heterostructures was investigated using cross-sectional transmission electron microscopy and image Fourier transformation. Self-organization of gold nanoparticles along the vertical direction was observed in films grown at 20 and at 320°C. Self-organization occurred by means of two different growth modes; both vertically correlated growth (top-on-top) and anticorrelated growth (top-on-middle) mechanisms were observed. The results of these studies suggest that the driving force for vertical ordering in this material is related to the long-range elastic interactions among the nanoparticles within the growing films.}, number={26}, journal={Applied Physics Letters}, author={Jin, C. M. and Zhou, H. H. and Wei, W. and Narayan, R.}, year={2006} }
 @article{doraiswamy_jin_narayan_mageswaran_mente_modi_auyeung_chrisey_ovsianikov_chichkov_2006, title={Two photon induced polymerization of organic-inorganic hybrid biomaterials for microstructured medical devices}, volume={2}, ISSN={["1878-7568"]}, DOI={10.1016/j.actbio.2006.01.004}, abstractNote={Three-dimensional microstructured medical devices, including microneedles and tissue engineering scaffolds, were fabricated by two photon induced polymerization of Ormocer® organic–inorganic hybrid materials. Femtosecond laser pulses from a titanium:sapphire laser were used to break chemical bonds on Irgacure® 369 photoinitiator within a small focal volume. The radicalized starter molecules reacted with Ormocer® US-S4 monomers to create radicalized polymolecules. The desired structures are fabricated by moving the laser focus in three dimensions using a galvano-scanner and a micropositioning system. Ormocer® surfaces fabricated using two photon induced polymerization demonstrated acceptable cell viability and cell growth profiles against B35 neuroblast-like cells and HT1080 epithelial-like cells. Lego®-like interlocking tissue engineering scaffolds and microneedle arrays with unique geometries were created using two photon induced polymerization. These results suggest that two photon induced polymerization is able to create medical microdevices with a larger range of sizes, shapes, and materials than chemical isotropic etching, injection molding, reactive ion etching, surface micromachining, bulk micromachining, polysilicon micromolding, lithography–electroforming–replication, or other conventional microfabrication techniques.}, number={3}, journal={ACTA BIOMATERIALIA}, author={Doraiswamy, A and Jin, C and Narayan, RJ and Mageswaran, P and Mente, P and Modi, R and Auyeung, R and Chrisey, DB and Ovsianikov, A and Chichkov, B}, year={2006}, month={May}, pages={267–275} }
 @article{tiwari_jin_narayan_park_2005, title={Electrical transport in ZnO(1-delta)films: Transition from band-gap insulator to Anderson localized insulator (vol 96, pg 3827, 2004)}, volume={97}, number={5}, journal={Journal of Applied Physics}, author={Tiwari, A. and Jin, C. and Narayan, J. and Park, M.}, year={2005} }
 @article{jin_tiwari_narayan_2005, title={Ultraviolet-illumination-enhanced photoluminescence effect in zinc oxide thin films}, volume={98}, ISSN={["1089-7550"]}, DOI={10.1063/1.2108156}, abstractNote={We report an enhancement effect of ultraviolet illumination on the photoluminescence intensities of zinc oxide thin films. Large-grain ⟨0001⟩-textured zinc oxide thin films were deposited on amorphous-fused silica substrates using pulsed laser deposition. We found that the intensities of excitonic emission and green-band emission increased with ultraviolet light exposure time until a maximum value was achieved. We attribute this ultraviolet radiation enhancement effect to oxygen desorption on the surface of the zinc oxide thin film. We have proposed a phenomenological model to explain this interesting photoluminescence behavior.}, number={8}, journal={JOURNAL OF APPLIED PHYSICS}, author={Jin, CM and Tiwari, A and Narayan, RJ}, year={2005}, month={Oct} }
 @article{tiwari_jin_narayan_park_2004, title={Electrical transport in ZnO1-delta films: Transition from band-gap insulator to Anderson localized insulator}, volume={96}, ISSN={["0021-8979"]}, DOI={10.1063/1.1783591}, abstractNote={We have thoroughly investigated the effect of oxygen nonstoichiometry on the electrical transport characteristics of ZnO1−δ films. These films were grown on optical grade quartz substrates by using a pulsed laser deposition technique. In order to alter the amount of oxygen nonstoichiometry (δ), oxygen partial pressure during the film growth was systematically varied from 102Torrto10−5Torr. Qualitative estimates about the amount of oxygen nonstoichiometry in these films were made using Raman Spectroscopy data. High resolution electrical resistivity and thermoelectric power measurements were performed in the temperature range 12–300K. A detailed analysis of electrical transport data showed a transition from band-gap insulating state (for the films prepared at high oxygen environments) to Anderson localized insulating state (for the films prepared at lower oxygen environments).}, number={7}, journal={JOURNAL OF APPLIED PHYSICS}, author={Tiwari, A and Jin, C and Narayan, J and Park, M}, year={2004}, month={Oct}, pages={3827–3830} }
 @article{haverkamp_mayo_bourham_narayan_jin_duscher_2003, title={Plasma plume characteristics and properties of pulsed laser deposited diamond-like carbon films}, volume={93}, ISSN={0021-8979 1089-7550}, url={http://dx.doi.org/10.1063/1.1555695}, DOI={10.1063/1.1555695}, abstractNote={Pulsed laser deposition is a unique technique for the deposition of hydrogen-free diamond-like carbon films. During deposition, amorphous carbon is evaporated from a solid target by a high-energy KrF laser, ionized, and ejected as a plasma plume. The plume expands outwards and deposits the target material on a substrate. The plasma properties of the plume determine the quality of the thin films deposited on the substrate. These plume properties include ion density, ion flow speed, electron temperature, and plume peaking parameter. In this research, a triple Langmuir probe is used to determine various plasma properties of the plume created from the pulsed laser ablation of amorphous graphite as a function of laser energy density and laser spot size on the target. A thin diamond-like carbon film is deposited and analyzed with electron energy-loss spectroscopy to determine the sp3/sp2 fraction. A special preparation technique was used to prepare the thin film for analysis to prevent the damage that may be caused by conventional ion milling techniques.}, number={6}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Haverkamp, J. and Mayo, R. M. and Bourham, M. A. and Narayan, J. and Jin, C. and Duscher, G.}, year={2003}, month={Mar}, pages={3627–3634} }
 @article{tiwari_jin_kumar_narayan_2003, title={Rectifying electrical characteristics of La0.7Sr0.3MnO3/ZnO heterostructure}, volume={83}, ISSN={["0003-6951"]}, DOI={10.1063/1.1605801}, abstractNote={We have fabricated a p–n junction, consisting of p-type manganite (La0.7Sr0.3MnO3) and n-type ZnO layers grown on sapphire substrate. This junction exhibits excellent rectifying behavior over the temperature range 20–300 K. Electrical characteristics of La0.7Sr0.3MnO3 (LSMO) film in this heterostructure are found to be strongly modified by the built-in electric field at the junction. It has been shown that by applying the external bias voltage, the thickness of the depletion layer, and hence, the electrical and magnetic characteristics of LSMO film can precisely be modified.}, number={9}, journal={APPLIED PHYSICS LETTERS}, author={Tiwari, A and Jin, C and Kumar, D and Narayan, J}, year={2003}, month={Sep}, pages={1773–1775} }
 @article{tiwari_chugh_jin_narayan_2003, title={Role of self-assembled gold nanodots in improving the electrical and optical characteristics of zinc oxide films}, volume={3}, ISSN={["1533-4880"]}, DOI={10.1166/jnn.2003.217}, abstractNote={We have studied the effect of embedding nanocrystalline Au particles on the electrical and optical characteristics of ZnO films. Au-embedded epitaxial ZnO films were deposited on (0001) sapphire substrates with a pulsed laser deposition technique. The crystalline quality of both the ZnO matrix and Au nanoparticles was investigated by X-ray diffraction and transmission electron microscopy. Composite films were characterized by photoluminescence, optical absorption, and low-temperature electrical resistivity measurements. Photoluminescence spectra of theses films showed a sharp excitonic peak at 3.22 +/- 0.05 eV without any signature of green band emission. Electrical resistivity measurements showed these films to be highly conducting, with a room-temperature resistivity of 3.4 +/- 0.2 m omega-cm.}, number={5}, journal={JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY}, author={Tiwari, A and Chugh, A and Jin, C and Narayan, J}, year={2003}, month={Oct}, pages={368–371} }
 @article{tiwari_park_jin_wang_kumar_narayan_2002, title={Epitaxial growth of ZnO films on si(111)}, volume={17}, ISSN={["2044-5326"]}, DOI={10.1557/JMR.2002.0361}, abstractNote={In this paper, we report the growth of ZnO films on silicon substrates using a pulsed laser deposition technique. These films were deposited on Si(111) directly as well as by using thin buffer layers of AlN and GaN. All the films were found to have c-axis-preferred orientation aligned with normal to the substrate. Films with AlN and GaN buffer layers were epitaxial with preferred in-plane orientation, while those directly grown on Si(111) were found to have random in-plane orientation. A decrease in the frequency of the  Raman mode and a red shift of the band-edge photoluminescence peak due to the presence of tensile strain in the film, was observed. Various possible sources for the observed biaxial strain are discussed.}, number={10}, journal={JOURNAL OF MATERIALS RESEARCH}, author={Tiwari, A and Park, M and Jin, C and Wang, H and Kumar, D and Narayan, J}, year={2002}, month={Oct}, pages={2480–2483} }
 @article{tiwari_narayan_jin_kvit_2002, title={Growth of epitaxial NdNiO3 and integration with Si(100)}, volume={80}, ISSN={["1077-3118"]}, DOI={10.1063/1.1451984}, abstractNote={We have grown epitaxial NdNiO3 films on Si(100) substrate under ambient oxygen pressure using a pulsed-laser deposition method. The integration of NdNiO3 with Si(100) was accomplished by lattice-matching epitaxy of MgO and SrTiO3 and domain matching epitaxy of TiN on Si(100). During domain matching epitaxy, four lattice constants of TiN match with three of silicon across the TiN/Si(100) interface. High-quality epitaxial NdNiO3 film on SrTiO3/MgO/TiN/Si(100) showed a very sharp metal–insulator (MI) phase transition at 200 K. Observed MI transition in epitaxial NdNiO3 is much sharper than that usually observed in bulk and polycrystalline films with more than four orders of magnitude change in resistivity. This MI transition is understood to arise because of the opening of charge transfer gap between Ni3+(3d) and O2−(2p) band.}, number={8}, journal={APPLIED PHYSICS LETTERS}, author={Tiwari, A and Narayan, J and Jin, C and Kvit, A}, year={2002}, month={Feb}, pages={1337–1339} }
 @article{tiwari_chug_jin_kumar_narayan_2002, title={Integration of single crystal La0.7Sr0.3MnO3 films with Si(001)}, volume={121}, ISSN={["0038-1098"]}, DOI={10.1016/S0038-1098(02)00029-7}, abstractNote={We have successfully grown high quality epitaxial La0.7Sr0.3MnO3 (LSMO) films on Si(001) substrate using TiN/MgO/SrTiO3 buffer layers by a pulsed laser deposition technique. The integration of LSMO with Si(100) was realized by domain matching epitaxy of TiN on Si(001) and lattice matching epitaxy of MgO, SrTiO3 and LSMO. During domain matching epitaxy, four lattice constants of TiN match with three of silicon across the TiN/Si(001) interface. X-ray diffraction and transmission electron microscope investigations showed the films to be single phase, single crystalline and epitaxial with (001) orientation. Electrical resistivity measurements showed a metal–insulator transition with a resistivity peak at ∼305 K. Enhanced electron–electron interactions are found to play significant role in LSMO films at low temperatures.}, number={12}, journal={SOLID STATE COMMUNICATIONS}, author={Tiwari, A and Chug, A and Jin, C and Kumar, D and Narayan, J}, year={2002}, pages={679–682} }
 @article{narayan_sharma_kvit_jin_muth_holland_2002, title={Novel cubic ZnxMg1-xO epitaxial hetero structures on Si (100) substrates}, volume={121}, number={1}, journal={Solid State Communications}, author={Narayan, J. and Sharma, A. K. and Kvit, A. and Jin, C. and Muth, J. F. and Holland, O. W.}, year={2002}, pages={9–13} }
 @article{tiwari_jin_narayan_2002, title={Strain-induced tuning of metal-insulator transition in NdNiO3}, volume={80}, ISSN={["1077-3118"]}, DOI={10.1063/1.1480475}, abstractNote={We have used the lattice-mismatch epitaxial strain, induced by the constraint of epitaxy, to tune the metal–insulator (M–I) transition temperature of NdNiO3 films grown on Si(100) substrate. Films were integrated with the Si(100) substrate using several combinations of thin buffer layers. A systematic variation in the electrical transport properties has been observed with the change in the lattice mismatch between NdNiO3 and the buffer layer just below it. It was shown that by the proper selection of the substrate and thickness of film, it is possible to control and precisely tune the M–I transition temperature of NdNiO3 to any desired value between 12 and 300 K (temperature range of this study). Fine control over the M–I transition temperature of these films is likely to boost the potential of these films for their applications in bolometers, actuators, and thermal/optical switches in next-generation perovskite-based microelectronic devices.}, number={21}, journal={APPLIED PHYSICS LETTERS}, author={Tiwari, A and Jin, C and Narayan, J}, year={2002}, month={May}, pages={4039–4041} }
 @article{tiwari_jin_kvit_kumar_muth_narayan_2002, title={Structural, optical and magnetic properties of diluted magnetic semiconducting Zn1-xMnxO films}, volume={121}, ISSN={["0038-1098"]}, DOI={10.1016/S0038-1098(01)00464-1}, abstractNote={We have investigated the structural, optical and magnetic properties of high quality epitaxial Zn1−xMnxO (diluted magnetic semiconductor) films. These films were deposited on (0001) sapphire substrate by a pulsed laser deposition technique. The nonequilibrium nature of the laser–material interaction allowed us to dope higher Mn contents (x=0.36) than allowed by thermal equilibrium limit (x∼0.13). All the films investigated here were found to be single phased and epitaxial with (0001) orientation. As the Mn concentration increases in the system, the c-axis lattice constant was found to increase linearly. Optical transmittance study showed an increase in the insulating band-gap (Eg) with increase in Mn atomic fraction x following Eg=3.270+2.760x−4.988x2eV. DC magnetization measurements showed the paramagnetic nature of the system.}, number={6-7}, journal={SOLID STATE COMMUNICATIONS}, author={Tiwari, A and Jin, C and Kvit, A and Kumar, D and Muth, JF and Narayan, J}, year={2002}, pages={371–374} }
 @article{kumar_narayan_nath_sharma_kvit_jin_2001, title={Tunable magnetic properties of metal ceramic composite thin films}, volume={119}, ISSN={["0038-1098"]}, DOI={10.1016/S0038-1098(01)00213-7}, abstractNote={We have developed a novel thin film processing method based upon pulsed laser deposition to process nanocrystalline magnetic materials with accurate size and interface control. Using this method, single domain nanocrystalline Fe and Ni particles in 5–10 nm size range embedded in amorphous as well as crystalline alumina have been produced. Magnetization measurements of these layered thin films as function of field and temperature were carried out using a superconducting quantum interference device magnetometer. The size of Fe and Ni nanodots measured using transmission electron microscopy and calculated using magnetic data are in excellent agreement with each other.}, number={2}, journal={SOLID STATE COMMUNICATIONS}, author={Kumar, D and Narayan, J and Nath, TK and Sharma, AK and Kvit, A and Jin, C}, year={2001}, pages={63–66} }
 @article{sharma_narayan_jin_kvit_chattopadhyay_lee_2000, title={Integration of Pb(Zr0.52Ti0.48)O-3 epilayers with Si by domain epitaxy}, volume={76}, ISSN={["1077-3118"]}, DOI={10.1063/1.126063}, abstractNote={High-quality lead zirconate titanate films (PZT) have been grown on yttrium barium copper oxide (YBCO) bottom electrode by domain epitaxy where integral multiples of lattice constants match across the interface. The YBCO films were epitaxially fabricated on Si (100) by introducing epilayer geometry of strontium titanate/magnesium oxide/titanium nitride. Pulsed-laser ablation was used to evaporate these five stoichiometric targets in a high vacuum chamber. X-ray diffraction and high-resolution transmission electron microscopy techniques were employed to gain understanding of the structure, crystallinity, and interfaces in these epilayers. The electrical characterization of the PZT films with evaporated silver contacts resulted in superior values of spontaneous polarization, remnant polarization, and coercive fields. This heterostructure opens a way for integration of epitaxial single-crystal PZT-based capacitors with silicon-based devices.}, number={11}, journal={APPLIED PHYSICS LETTERS}, author={Sharma, AK and Narayan, J and Jin, C and Kvit, A and Chattopadhyay, S and Lee, C}, year={2000}, month={Mar}, pages={1458–1460} }
 @article{teng_muth_ozgur_bergmann_everitt_sharma_jin_narayan_2000, title={Refractive indices and absorption coefficients of MgxZn1-xO alloys}, volume={76}, ISSN={["0003-6951"]}, DOI={10.1063/1.125912}, abstractNote={Indices of refraction for MgxZn1−xO epitaxial films grown by pulsed-laser deposition on sapphire substrates with x up to 0.36 were determined in the range of wavelength 457–968 nm by analysis of optical transmission spectra and prism-coupled waveguide measurements. The dispersion follows the first-order Sellmeier dispersion equation. Absorption coefficients, exciton energy gaps, and binding energies of MgxZn1−xO alloys were determined by transmission spectroscopy. The excitonic absorption features were clearly visible at room temperature despite alloy broadening. These results provide important information for the design and modeling of ZnO/MgZnO heterostructure optoelectronic devices.}, number={8}, journal={APPLIED PHYSICS LETTERS}, author={Teng, CW and Muth, JF and Ozgur, U and Bergmann, MJ and Everitt, HO and Sharma, AK and Jin, C and Narayan, J}, year={2000}, month={Feb}, pages={979–981} }
 @inproceedings{sharma_jin_narayan_teng_muth_kolbas_holland_2000, title={Structural and optical property investigations on Mg-Alloying in epitaxial zinc oxide films on sapphire}, number={2000}, booktitle={MRS Internet Journal of Nitride Semiconductor Research}, author={Sharma, A. K. and Jin, C. and Narayan, J. and Teng, C. W. and Muth, J. F. and Kolbas, R. M. and Holland, O. W.}, year={2000} }
 @article{sharma_narayan_muth_teng_jin_kvit_kolbas_holland_1999, title={Optical and structural properties of epitaxial MgxZn1-xO alloys}, volume={75}, ISSN={["1077-3118"]}, DOI={10.1063/1.125340}, abstractNote={The optical and structural properties of high-quality single-crystal epitaxial MgZnO films deposited by pulsed-laser deposition were studied. In films with up to ∼36 at. % Mg incorporation, we have observed intense ultraviolet band edge photoluminescence at room temperature and 77 K. The highly efficient photoluminescence is indicative of the excitonic nature of the material. Transmission spectroscopy was used to show that the excitonic structure of the alloys was clearly visible at room temperature. High-resolution transmission electron microscopy, x-ray diffraction, and Rutherford backscattering spectroscopy/ion channeling were used to verify the epitaxial single-crystal quality of the films and characterize the defect content. Post-deposition annealing in oxygen was found to reduce the number of defects and to improve the optical properties of the films. These results indicate that MgZnO alloys have potential applications in a variety of optoelectronic devices.}, number={21}, journal={APPLIED PHYSICS LETTERS}, author={Sharma, AK and Narayan, J and Muth, JF and Teng, CW and Jin, C and Kvit, A and Kolbas, RM and Holland, OW}, year={1999}, month={Nov}, pages={3327–3329} }
 @misc{wei_sethuraman_jin_monteiro-riviere_narayan, title={Biological properties of carbon nanotubes}, volume={7}, number={4-5}, journal={Journal of Nanoscience and Nanotechnology}, author={Wei, W. and Sethuraman, A. and Jin, C. and Monteiro-Riviere, N. A. and Narayan, R. J.}, pages={1284–1297} }