@article{lee_choi_kirkpatrick_huang_misra_2013, title={Improved high-temperature device transport properties and off-state characteristics of AlGaN/GaN power devices with atomic layer deposition (ALD) HfAlO high-k dielectric}, volume={28}, DOI={10.1088/0268-1242/28/7/074016}, number={7}, journal={Semiconductor Science and Technology}, author={Lee, B. and Choi, Y. H. and Kirkpatrick, C. and Huang, A. Q. and Misra, V.}, year={2013} }
 @article{ramanan_lee_kirkpatrick_suri_misra_2013, title={Properties of atomic layer deposited dielectrics for AlGaN/GaN device passivation}, volume={28}, DOI={10.1088/0268-1242/28/7/074004}, number={7}, journal={Semiconductor Science and Technology}, author={Ramanan, N. and Lee, B. and Kirkpatrick, C. and Suri, R. and Misra, V.}, year={2013} }
 @article{kirkpatrick_lee_suri_yang_misra_2012, title={Atomic layer deposition of SiO2 for AlGaN/GaN MOS-HFETs}, volume={33}, DOI={10.1109/led.2012.2203782}, number={9}, journal={IEEE Electron Device Letters}, author={Kirkpatrick, C. J. and Lee, B. and Suri, R. and Yang, X. Y. and Misra, V.}, year={2012}, pages={1240–1242} }
 @inproceedings{lee_kirkpatrick_choi_yang_huang_misra_2012, title={Normally-off AlGaN/GaN MOSHFET using ALD SiO2 tunnel dielectric and ALD HfO2 charge storage layer for power device application}, volume={9}, DOI={10.1002/pssc.201100422}, number={3-4}, booktitle={Physica status solidi c: current topics in solid state physics, vol 9, no 3-4}, author={Lee, B. and Kirkpatrick, C. and Choi, Y. H. and Yang, X. Y. and Huang, A. Q. and Misra, V.}, year={2012}, pages={868–870} }
 @inproceedings{kirkpatrick_lee_choi_huang_misra_2012, title={Threshold voltage stability comparison in AlGaN/GaN FLASH MOS-HFETs utilizing charge trap or floating gate charge storage}, volume={9}, DOI={10.1002/pssc.201100421}, number={3-4}, booktitle={Physica status solidi c: current topics in solid state physics, vol 9, no 3-4}, author={Kirkpatrick, C. and Lee, B. and Choi, Y. and Huang, A. and Misra, V.}, year={2012}, pages={864–867} }
 @inproceedings{kirkpatrick_lee_yang_misra_2011, title={Performance improvement of AlGaN/GaN high electron mobility transistors with atomic layer deposition (ALD) of SiO2 and HfAlO dielectrics}, volume={8}, DOI={10.1002/pssc.201001064}, number={7-8}, booktitle={Physica status solidi c: current topics in solid state physics, vol 8, no 7-8}, author={Kirkpatrick, C. and Lee, B. and Yang, X. Y. and Misra, V.}, year={2011} }
 @article{suri_kirkpatrick_lichtenwalner_misra_2010, title={Energy-band alignment of Al2O3 and HfAlO gate dielectrics deposited by atomic layer deposition on 4H-SiC}, volume={96}, number={4}, journal={Applied Physics Letters}, author={Suri, R. and Kirkpatrick, C. J. and Lichtenwalner, D. J. and Misra, V.}, year={2010} }
 @inproceedings{lee_kirkpatrick_yang_jayanti_suri_roberts_misra_2010, title={Normally-off AlGaN/GaN-on-Si MOSHFETs with TaN floating gates and ALD SiO2 tunnel dielectrics}, DOI={10.1109/iedm.2010.5703401}, booktitle={2010 international electron devices meeting - technical digest}, author={Lee, B. and Kirkpatrick, C. and Yang, X. Y. and Jayanti, S. and Suri, R. and Roberts, J. and Misra, V.}, year={2010} }