Lewis Reynolds

Pokharel, R., Kuchoor, H., Parakh, M., Devkota, S., Dawkins, K., Ramaswamy, P., … Iyer, S. (2023, March 20). GaAs/GaAsSb Core-Shell Configured Nanowire-Based Avalanche Photodiodes up to 1.3?m Light Detection. ACS APPLIED NANO MATERIALS. https://doi.org/10.1021/acsanm.2c03644

Kanber, M., Umerah, O., Brindley, S., Zhang, X., Brown, J. M., Reynolds, L., & Beltran-Huarac, J. (2023). Magneto-Mechanical Actuation Induces Endothelial Permeability. ACS BIOMATERIALS SCIENCE & ENGINEERING, 9(12), 6902–6914. https://doi.org/10.1021/acsbiomaterials.3c01571

Yang, N., Zhang, X., Reynolds, L., Kumah, D., & Xu, C. (2023, January 24). The Role of Carbon Content: A Comparison of the Nickel Particle Size and Magnetic Property of Nickel/Polysiloxane-Derived Silicon Oxycarbide. ADVANCED ENGINEERING MATERIALS, Vol. 1. https://doi.org/10.1002/adem.202201453

Devkota, S., Parakh, M., Ramaswamy, P., Kuchoor, H., Penn, A., Reynolds, L., & Iyer, S. (2022). A Study on the Effects of Gallium Droplet Consumption and Post Growth Annealing on Te-Doped GaAs Nanowire Properties Grown by Self-Catalyzed Molecular Beam Epitaxy. CATALYSTS, 12(5). https://doi.org/10.3390/catal12050451

Ramaswamy, P., Devkota, S., Pokharel, R., Nalamati, S., Stevie, F., Jones, K., … Iyer, S. (2021). A study of dopant incorporation in Te-doped GaAsSb nanowires using a combination of XPS/UPS, and C-AFM/SKPM. SCIENTIFIC REPORTS, 11(1). https://doi.org/10.1038/s41598-021-87825-4

Ramesh, S., Davis, J., Roros, A., Eiben, J., Fabiani, T., Smith, R., … Menegatti, S. (2021). Dual-Responsive Microgels for Structural Repair and Recovery of Nonwoven Membranes for Liquid Filtration. ACS APPLIED POLYMER MATERIALS, 3(3), 1508–1517. https://doi.org/10.1021/acsapm.0c01360

Allen-Perry, K., Straka, W., Keith, D., Han, S., Reynolds, L., Gautam, B., & Autrey, D. E. (2021). Tuning the Magnetic Properties of Two-Dimensional MXenes by Chemical Etching. MATERIALS, 14(3). https://doi.org/10.3390/ma14030694

Devkota, S., Parakh, M., Johnson, S., Ramaswamy, P., Lowe, M., Penn, A., … Iyer, S. (2020). A study of n-doping in self-catalyzed GaAsSb nanowires using GaTe dopant source and ensemble nanowire near-infrared photodetector. NANOTECHNOLOGY, 31(50). https://doi.org/10.1088/1361-6528/abb506

Kumar, R., Liu, Y., Li, J., Iyer, S., & Reynolds, L. (2020). Doping Dependent Magnetic Behavior in MBE Grown GaAs1-xSbx Nanowires. SCIENTIFIC REPORTS, 10(1). https://doi.org/10.1038/s41598-020-65805-4

Pokharel, R., Ramaswamy, P., Devkota, S., Parakh, M., Dawkins, K., Penn, A., … Iyer, S. (2020). Epitaxial High-Yield Intrinsic and Te-Doped Dilute Nitride GaAsSbN Nanowire Heterostructure and Ensemble Photodetector Application. ACS APPLIED ELECTRONIC MATERIALS, 2(9), 2730–2738. https://doi.org/10.1021/acsaelm.0c00450

Nalamati, S., Devkota, S., Li, J., Lavelle, R., Huet, B., Snyder, D., … Iyer, S. (2020). Hybrid GaAsSb/GaAs Heterostructure Core-Shell Nanowire/Graphene and Photodetector Applications. ACS APPLIED ELECTRONIC MATERIALS, 2(10), 3109–3120. https://doi.org/10.1021/acsaelm.0c00433

Nalamati, S., Sharma, M., Deshmukh, P., Kronz, J., Lavelle, R., Snyder, D., … Iyer, S. (2019). A Study of GaAs1-xSbx Axial Nanowires Grown on Monolayer Graphene by Ga-Assisted Molecular Beam Epitaxy for Flexible Near-Infrared Photodetectors. ACS APPLIED NANO MATERIALS, 2(7), 4528–4537. https://doi.org/10.1021/acsanm.9b00893

Sharma, M., Ahmad, E., Dev, D., Li, J., Reynolds, C. L., Jr., Liu, Y., & Iyer, S. (2019). Improved performance of GaAsSb/AIGaAs nanowire ensemble Schottky barrier based photodetector via in situ annealing. NANOTECHNOLOGY, 30(3). https://doi.org/10.1088/1361-6528/aae148

Akouala, C. R., Kumar, R., Punugupati, S., Reynolds, C. L., Reynolds, J. G., Mily, E. J., … Hunte, F. (2019). Planar Hall effect and anisotropic magnetoresistance in semiconducting and conducting oxide thin films. Applied Physics A, 125(5). https://doi.org/10.1007/s00339-019-2592-y

Deshmukh, P., Sharma, M., Nalamati, S., Reynolds, C. L., Jr., Liu, Y., & Iyer, S. (2018). Molecular beam epitaxial growth of high quality Ga-catalyzed GaAs1-xSbx(x > 0.8) nanowires on Si (111) with photoluminescence emission reaching 1.7 mu m. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 33(12). https://doi.org/10.1088/1361-6641/aae7b8

Jagannadham, K., Das, K., Reynolds, C. L., & El-Masry, N. (2018). Nature of electrical conduction in MoS2 films deposited by laser physical vapor deposition. Journal of Materials Science: Materials in Electronics, 29(16), 14180–14191. https://doi.org/10.1007/s10854-018-9551-9

Ahmad, E., Karim, M. R., Bin Hafiz, S., Reynolds, C. L., Liu, Y., & Iyer, S. (2017). A Two-Step Growth Pathway for High Sb Incorporation in GaAsSb Nanowires in the Telecommunication Wavelength Range. SCIENTIFIC REPORTS, 7. https://doi.org/10.1038/s41598-017-09280-4

Ahmad, E., Ojha, S. K., Kasanaboina, P. K., Reynolds, C. L., Jr., Liu, Y., & Iyer, S. (2017). Bandgap tuning in GaAs1-xSbx axial nanowires grown by Ga-assisted molecular beam epitaxy. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 32(3). https://doi.org/10.1088/1361-6641/32/3/035002

El-Masry, N. A., Zavada, J. M., Reynolds, J. G., Reynolds, C. L., Jr., Liu, Z., & Bedair, S. M. (2017). Electric field control of ferromagnetism at room temperature in GaCrN (p-i-n) device structures. Applied Physics Letters, 111(8), 082402. https://doi.org/10.1063/1.4986431

Sharma, M., Deshmukh, P., Kasanaboina, P., Reynolds, C. L., Jr., Liu, Y., & Iyer, S. (2017). Growth of defect-free GaAsSbN axial nanowires via self-catalyzed molecular beam epitaxy. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 32(12). https://doi.org/10.1088/1361-6641/aa90b0

Wells, B., Kumar, R., Reynolds, C. L., Jr., Peters, K., & Bradford, P. D. (2017). Highly anisotropic magneto-transport and field orientation dependent oscillations in aligned carbon nanotube/epoxy composites. APPLIED PHYSICS LETTERS, 111(26). https://doi.org/10.1063/1.4999503

Lampert, Z. E., Papanikolas, J. M., Lappi, S. E., & Reynolds, C. L., Jr. (2017). Intrinsic gain and gain degradation modulated by excitation pulse width in a semiconducting conjugated polymer. OPTICS AND LASER TECHNOLOGY, 94, 77–85. https://doi.org/10.1016/j.optlastec.2017.03.019

Kasanaboina, P. K., Ojha, S. K., Sami, S. U., Reynolds, C. L., Jr., Liu, Y., & Iyer, S. (2016). Effect of Growth Parameters and Substrate Surface Preparation for High-Density Vertical GaAs/GaAsSb Core-Shell Nanowires on Silicon with Photoluminescence Emission at 1.3 mu m. JOURNAL OF ELECTRONIC MATERIALS, 45(4), 2108–2114. https://doi.org/10.1007/s11664-015-4316-1

Kasanaboina, P., Sharma, M., Deshmukh, P., Reynolds, C. L., Jr., Liu, Y., & Iyer, S. (2016). Effects of Annealing on GaAs/GaAsSbN/GaAs Core-Multi-shell Nanowires. NANOSCALE RESEARCH LETTERS, 11. https://doi.org/10.1186/s11671-016-1265-4

Ojha, S. K., Kasanaboina, P. K., Reynolds, C. L., Jr., Rawdanowicz, T. A., Liu, Y., White, R. M., & Iyer, S. (2016). Incorporation of Be dopant in GaAs core and core-shell nanowires by molecular beam epitaxy. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 34(2). https://doi.org/10.1116/1.4943600

Ahmad, E., Kasanaboina, P. K., Karim, M. R., Sharma, M., Reynolds, C. L., Liu, Y., & Iyer, S. (2016). Te incorporation in GaAs1-xSbx nanowires and p-i-n axial structure. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 31(12). https://doi.org/10.1088/0268-1242/31/12/125001

Kasanaboina, P. K., Ojha, S. K., Sami, S. U., Reynolds, C. L., Jr., Liu, Y., & Iyer, S. (2015). Bandgap tuning of GaAs/GaAsSb core-shell nanowires grown by molecular beam epitaxy. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 30(10). https://doi.org/10.1088/0268-1242/30/10/105036

Wilkins, S. J., Paskova, T., Reynolds, C. L., Jr., & Ivanisevic, A. (2015). Comparison of the Stability of Functionalized GaN and GaP. CHEMPHYSCHEM, 16(8), 1687–1694. https://doi.org/10.1002/cphc.201500105

Ebert, C., Pulwin, Z., Reynolds, C. L., Jr., Ramos, F. S., Li, Y., & Farrell, S. (2015, March 15). Optimization of InGaP metamorphic buffers grown by MOVPE. JOURNAL OF CRYSTAL GROWTH, Vol. 414, pp. 21–26. https://doi.org/10.1016/j.jcrysgro.2014.10.022

Kasanaboina, P. K., Ahmad, E., Li, J., Reynolds, C. L., Jr., Liu, Y., & Iyer, S. (2015). Self-catalyzed growth of dilute nitride GaAs/GaAsSbN/GaAs core-shell nanowires by molecular beam epitaxy. APPLIED PHYSICS LETTERS, 107(10). https://doi.org/10.1063/1.4930887

Bayati, R., Molaeil, R., Richmond, A., Nori, S., Wu, F., Kumar, D., … Reynolds, C. L., Jr. (2014). Modification of Properties of Yttria Stabilized Zirconia Epitaxial Thin Films by Excimer Laser Annealing. ACS APPLIED MATERIALS & INTERFACES, 6(24), 22316–22325. https://doi.org/10.1021/am506298y

Reynolds, J. G., & Reynolds, C. L. (2014). [Review of Progress in ZnO Acceptor Doping: What Is the Best Strategy?]. ADVANCES IN CONDENSED MATTER PHYSICS, 2014. https://doi.org/10.1155/2014/457058

Reynolds, C. L., Jr., Reynolds, J. G., Crespo, A., Gillespie, J. K., Chabak, K. D., & Davis, R. F. (2013). Dislocations as quantum wires: Buffer leakage in AlGaN/GaN heterostructures. JOURNAL OF MATERIALS RESEARCH, 28(13), 1687–1691. https://doi.org/10.1557/jmr.2013.76

Lampert, Z. E., Papanikolas, J. M., & Reynolds, C. L., Jr. (2013). Enhancement of optical gain and amplified spontaneous emission due to waveguide geometry in the conjugated polymer poly[2-methoxy-5-(2 '-ethylhexyloxy)-p-phenylene vinylene]. APPLIED PHYSICS LETTERS, 102(7). https://doi.org/10.1063/1.4793422

Lampert, Z. E., Lappi, S. E., Papanikolas, J. M., & Reynolds, C. L. (2013). Intrinsic optical gain in thin films of a conjugated polymer under picosecond excitation. Applied Physics Letters, 103(3).

Lampert, Z. E., Lappi, S. E., Papanikolas, J. M., Reynolds, C. L., & Aboelfotoh, M. O. (2013). Morphology and chain aggregation dependence of optical gain in thermally annealed films of the conjugated polymer poly[2-methoxy-5-(2 '-ethylhexyloxy)-p-phenylene vinylene]. Journal of Applied Physics, 113(23).

Reynolds, J. G., Reynolds, C. L., Jr., Mohanta, A., Muth, J. F., Rowe, J. E., Everitt, H. O., & Aspnes, D. E. (2013). Shallow acceptor complexes in p-type ZnO. APPLIED PHYSICS LETTERS, 102(15). https://doi.org/10.1063/1.4802753

Lampert, Z. E., Reynolds, C. L., Jr., Papanikolas, J. M., & Aboelfotoh, M. O. (2012). Controlling Morphology and Chain Aggregation in Semiconducting Conjugated Polymers: The Role of Solvent on Optical Gain in MEH-PPV. JOURNAL OF PHYSICAL CHEMISTRY B, 116(42), 12835–12841. https://doi.org/10.1021/jp304199u

Dumcenco, D. O., Levcenco, S., Huang, Y. S., Reynolds, C. L., Jr., Reynolds, J. G., Tiong, K. K., … Evans, K. R. (2011). Characterization of freestanding semi-insulating Fe-doped GaN by photoluminescence and electromodulation spectroscopy. JOURNAL OF APPLIED PHYSICS, 109(12). https://doi.org/10.1063/1.3592343

Bharatan, S., Iyer, S., Li, J., Rawdanowicz, T. A., & Reynolds, L., Jr. (2011). Study of molecular beam epitaxially grown InGaAsSbN/GaSb single quantum wells. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 29(3). https://doi.org/10.1116/1.3555368

Grenko, J. A., Ebert, C. W., Reynolds, C. L., Jr., Duscher, G. J., Barlage, D. W., Johnson, M. A. L., … Evans, K. R. (2010). Optimization of homoepitaxially grown AlGaN/GaN heterostructures. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 207(10), 2292–2299. https://doi.org/10.1002/pssa.200925508

Reynolds, C. L., Jr., & Grenko, J. A. (2009). Crystallographic plane dependent Fe and Si dopant incorporation and activation in InP. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 206(4), 691–696. https://doi.org/10.1002/pssa.200824271

Bishop, S. M., Reynolds, C. L., Molstad, J. C., Stevie, F. A., Barnhardt, D. E., & Davis, R. F. (2009). On the origin of aluminum-related cathodoluminescence emissions from sublimation grown 4H-SiC(11(2)over-bar0). APPLIED SURFACE SCIENCE, 255(13-14), 6535–6539. https://doi.org/10.1016/j.apsusc.2009.02.036

Biggerstaff, T. L., Reynolds, C. L., Jr., Zheleva, T., Lelis, A., Habersat, D., Haney, S., … Duscher, G. (2009). Relationship between 4H-SiC/SiO2 transition layer thickness and mobility. APPLIED PHYSICS LETTERS, 95(3). https://doi.org/10.1063/1.3144272

Darling, K. A., Reynolds, C. L., Jr., Leonard, D. N., Duscher, G., Scattergood, R. O., & Koch, C. C. (2008). Self-assembled three-dimensional Cu-Ge nanoweb composite. NANOTECHNOLOGY, 19(13). https://doi.org/10.1088/0957-4484/19/13/135603

Bishop, S. M., Reynolds, C. L., Jr., Liliental-Weber, Z., Uprety, Y., Ebert, C. W., Stevie, F. A., … Davis, R. F. (2008). Sublimation growth of an in-situ-deposited layer in SiC chemical vapor deposition on 4H-SiC(1 1 (2)over-bar 0). JOURNAL OF CRYSTAL GROWTH, 311(1), 72–78. https://doi.org/10.1016/j.jcrysgro.2008.09.200

Darling, K. A., Guduru, R. K., Reynolds, C. L., Jr, Bhosle, V. M., Chan, R. N., Scattergood, R. O., … Aboelfotoh, M. O. (2008). Thermal stability, mechanical and electrical properties of nanocrystalline Cu3Ge. Intermetallics, 16(3), 378–383. https://doi.org/10.1016/j.intermet.2007.11.005

Reynolds, C. L., Jr., & Patel, A. (2008). Tunneling entity in different injection regimes of InGaN light emitting diodes. JOURNAL OF APPLIED PHYSICS, 103(8). https://doi.org/10.1063/1.2906326

Bishop, S. M., Reynolds, C. L., Jr., Liliental-Weber, Z., Uprety, Y., Zhu, J., Wang, D., … Davis, R. F. (2007, April). Polytype stability and microstructural characterization of silicon carbide epitaxial films grown on [11(2)over bar0]- and [0001]-oriented silicon carbide substrates. JOURNAL OF ELECTRONIC MATERIALS, Vol. 36, pp. 285–296. https://doi.org/10.1007/s11664-006-0076-2

Young, D. K., Reynolds, C. L., Swarninathan, V., & Walters, F. S. (2005). Influence of Zn doping profiles on excitation dependence of photoluminescence intensity in InGaAsP heterostructures. ELECTRONICS LETTERS, 41(18), 1008–1010. https://doi.org/10.1049/el:20052347

Przybylek, G. J., Reynolds, C. L., & Walters, F. S. (2004). Improved contact resistance and linearity in optoelectronic devices with an intermediate quaternary layer. JOURNAL OF APPLIED PHYSICS, 96(10), 5788–5791. https://doi.org/10.1063/1.1801160

Grenko, J. A., Reynolds, C. L., Schlesser, R., Hren, J. J., Bachmann, K., Sitar, Z., & Kotula, P. G. (2004). Nanoscale GaN whiskers fabricated by photoelectrochemical etching. JOURNAL OF APPLIED PHYSICS, 96(9), 5185–5188. https://doi.org/10.1063/1.1788841

Grenko, J. A., Reynolds, C. L., Schlesser, R., Bachmann, K., Rietmeier, Z., Davis, R. F., & Sitar, Z. (2004). Selective etching of GaN from AlGaN/GaN and AlN/GaN structures. MRS Internet Journal of Nitride Semiconductor Research, 9(5). https://doi.org/10.1557/s1092578300000405