@article{zhuang_li_hu_han_liu_peng_li_zhang_wei_xu_2020, title={Flexible composites with Ce-doped BaTiO3/P(VDF-TrFE) nanofibers for piezoelectric device}, volume={200}, ISSN={["1879-1050"]}, DOI={10.1016/j.compscitech.2020.108386}, abstractNote={Flexible piezoelectric energy harvesting devices based on inorganic piezoelectric materials have attracted wide attention for their outstanding physical properties and potential applications. Different strategies, such as adding ductile elements, increasing sintering time, sintering in various atmospheres, mixing with organic compounds which usually is not only for piezoelectric materials, are also used to fabricate highly flexible devices. However, these methods always accompanied by a sharp reduction in piezoelectric performance, and then the sensitivity of the device will be reduced. Here, The flexible piezoelectric energy harvesting device by mixing Ce-doped barium titanate (BaTiO3, BTO) nanofibers with poly (vinylidene fluoride-trifluorethylene) [P(VDF-TrFE)] nanofibers is studied. Due to the introduction of P(VDF-TrFE) nanofibers, the device show high flexibility. The device with high output signal is obtained, since both fillers are piezoelectric materials. The results show that the output power density of the device fabricated by Ce-BTO/P(VDF-TrFE) composite nanofibers is about six times larger than the device obtained by P(VDF-TrFE) nanofibers. This proposed method is expected to provide reference for the development of future nanoscale piezoelectric-based energy harvesting devices and sensors.}, journal={COMPOSITES SCIENCE AND TECHNOLOGY}, author={Zhuang, Yongyong and Li, Jinglei and Hu, Qingyuan and Han, Shuang and Liu, Weihua and Peng, Chang and Li, Zhong and Zhang, Lin and Wei, Xiaoyong and Xu, Zhuo}, year={2020}, month={Nov} }
 @article{mackey_rachi_peng_husain_2020, title={Optimization and Control of a Z-Source, Ultrafast Mechanically Switched, High-Efficiency DC Circuit Breaker}, volume={56}, ISSN={["1939-9367"]}, DOI={10.1109/TIA.2020.2970657}, abstractNote={A novel design of the Z-source circuit breaker topology is presented to minimize on-state losses of the protection device. An ultrafast mechanical switch is proposed to commutate the fault current and improve the controllability of the circuit breaker. Replacing the power thyristor in the Z-source circuit breaker and integrating an advanced control scheme reduces energy losses with a low-resistance mechanical contactor. The proposed design facilitates bidirectional current flow, enhances control capability for distributed energy resources, and improves ride-through capabilities during load transients. Z-source circuit breakers utilize an impedance network to create a forced current zero crossing in the event of a fault, allowing the inline thyristor to isolate the fault from the source through reverse bias. However, full load current flows through the thyristor, resulting in high loss and heat generation. The concept is validated, and a proper control scheme is developed for this circuit breaker through an analytical estimation model of the system dynamics during a fault. Simulation and modeling are performed in power systems computer aided design (PSCAD) and piecewise linear electrical circuit simulation (PLECS). Finally, an experimental laboratory prototype is tested to validate the analytical and simulation models and certify the control logic.}, number={3}, journal={IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS}, author={Mackey, Landon and Rachi, Md Rifat Kaisar and Peng, Chang and Husain, Iqbal}, year={2020}, pages={2871–2879} }
 @article{peng_chen_wang_shen_jiang_2020, title={P(VDF-TrFE) Thin-Film-Based Transducer for Under-Display Ultrasonic Fingerprint Sensing Applications}, volume={20}, ISSN={["1558-1748"]}, DOI={10.1109/JSEN.2020.2997375}, abstractNote={The use of fingerprint for biometric identification is one of the most prevalent authentication methods applied today in smartphones. In the course of pursuing narrow-bezel and full-screen display, the under-display fingerprint sensor is considered to be a user-friendly and practical solution for newer models of smartphone. While under-display optical fingerprint sensor has been commercially available in various smartphones, it demonstrates limitations such as sensitivity to humidity and contaminations including oil and water as well as easy to spoof. Ultrasonic fingerprint sensing has been proved to be able to overcome these limitations. In this study, P(VDF-TrFE) piezoelectric polymer-based transducer was reported, for the first time, for under-display ultrasonic fingerprint sensing applications. In specific, a 40 MHz ultrasonic transducer using a layer of <inline-formula> <tex-math notation="LaTeX">$10~\mu \text{m}$ </tex-math></inline-formula> thick P(VDF-TrFE) thin-film was designed, fabricated, and characterized. The under-display ultrasonic fingerprint sensing capability of the prototyped transducer was experimentally validated using phantoms of real fingerprint. Electronic images of fingerprint with resolution of <inline-formula> <tex-math notation="LaTeX">$500\times500$ </tex-math></inline-formula> DPI were obtained through under-display ultrasonic fingerprint sensing tests. The lateral resolution of the transducer was calculated to be <inline-formula> <tex-math notation="LaTeX">$\sim ~70~\mu \text{m}$ </tex-math></inline-formula>. The results of this study illustrate promising advances in under-display ultrasonic fingerprint sensing applications.}, number={19}, journal={IEEE SENSORS JOURNAL}, author={Peng, Chang and Chen, Mengyue and Wang, Hongchao and Shen, Jian and Jiang, Xiaoning}, year={2020}, month={Oct}, pages={11221–11228} }
 @misc{peng_2019, title={Comment on the paper "Generation and reduction of bulk nanobubbles by ultrasonic irradiation" by Keiji Yasuda, Hodaka Matsushima, and Yoshiyuki Asakura, Chemical Engineering Science 195 (2019) 455-461}, volume={207}, ISSN={["1873-4405"]}, DOI={10.1016/j.ces.2019.05.053}, abstractNote={Abstract Comment is provided on some doubtful results included in the published paper, Yasuda et al. (2019).}, journal={CHEMICAL ENGINEERING SCIENCE}, author={Peng, Chang}, year={2019}, month={Nov}, pages={1364–1365} }
 @article{song_peng_huang_2017, title={A Medium-Voltage Hybrid DC Circuit Breaker, Part I: Solid-State Main Breaker Based on 15 kV SiC Emitter Turn-OFF Thyristor}, volume={5}, ISSN={["2168-6777"]}, DOI={10.1109/jestpe.2016.2609845}, abstractNote={This paper discusses the design of a 10 kV and 200 A hybrid dc circuit breaker suitable for the protection of the dc power systems in electric ships. The proposed hybrid dc circuit breaker employs a Thompson coil based ultrafast mechanical switch (MS) with the assistance of two additional solid-state power devices. A low-voltage (80 V) metal–oxide–semiconductor field-effect transistors (MOSFETs)-based commutating switch (CS) is series connected with the MS to realize the zero current turn-OFF of the MS. In this way, the arcing issue with the MS is avoided. A 15 kV SiC emitter turn-OFF thyristor-based main breaker (MB) is parallel connected with the MS and CS branch to interrupt the fault current. A stack of MOVs parallel with the MB are used to clamp the voltage across the hybrid dc circuit breaker during interruption. This paper focuses on the electronic parts of the hybrid dc circuit breaker, and a companion paper will elucidate the principle and operation of the fast acting MS and the overall operation of the hybrid dc circuit breaker. The selection and design of both the high-voltage and low-voltage electronic components in the hybrid dc circuit breaker are presented in this paper. The turn-OFF capability of the MB with and without snubber circuit is experimentally tested, validating its suitability for the hybrid dc circuit breaker application. The CSs’ conduction performances are tested up to 200 A, and its current commutating during fault current interruption is also analyzed. Finally, the hybrid dc circuit breaker demonstrated a fast current interruption within 2 ms at 7 kV and 100 A.}, number={1}, journal={IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS}, author={Song, Xiaoqing and Peng, Chang and Huang, Alex Q.}, year={2017}, month={Mar}, pages={278–288} }
 @article{peng_song_huang_husain_2017, title={A Medium-Voltage Hybrid DC Circuit Breaker-Part II: Ultrafast Mechanical Switch}, volume={5}, ISSN={["2168-6777"]}, DOI={10.1109/jestpe.2016.2609391}, abstractNote={This paper presents the test results of an ultrafast (less than 2 ms) medium-voltage hybrid dc circuit breaker prototype that consists of three switching devices: a 15-kV silicon carbide (SiC) emitter turn-off thyristor as the main breaker (MB), a fast acting mechanical switch, and a commutating switch (CS) to quickly divert the primary current to the MB for arcless interruption. The hybrid dc circuit breaker prototype can interrupt a circuit in less than 2 ms in dc power systems up to 10 kV, such as in electric ships. The ultrafast operations and extremely low loss can effectively limit the fault current level and switching transients in all medium-voltage systems, and can provide intelligent and fast protection function for smart power distribution and critical loads in a modernized grid. The design considerations of the three switching devices of the hybrid dc circuit breaker are presented. This paper focuses on the ultrafast mechanical switch and the testing of the hybrid dc circuit breaker, while a companion paper addresses the high-voltage solid-state main switch and the low-voltage solid-state CS.}, number={1}, journal={IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS}, author={Peng, Chang and Song, Xiaoqing and Huang, Alex Q. and Husain, Iqbal}, year={2017}, month={Mar}, pages={289–296} }
 @article{song_huang_lee_peng_2017, title={Theoretical and Experimental Study of 22 kV SiC Emitter Turn-OFF (ETO) Thyristor}, volume={32}, ISSN={["1941-0107"]}, DOI={10.1109/tpel.2016.2616841}, abstractNote={Controllable three terminal high voltage (<inline-formula><tex-math notation="LaTeX">$>$</tex-math> </inline-formula>10 kV) power switches based on silicon carbide (SiC) material are gaining significant attentions since silicon (Si) power switches such as insulated gate bipolar transistors (IGBTs) are typically designed for much lower blocking voltages. After more than 30 years of commercial development, there is a fundamental limitation in designing Si IGBTs with more than 6.5 kV voltage rating. On the other hand, the voltage barrier for SiC power devices could easily exceed 10 kV. In this paper, a world record 22 kV SiC p-type emitter turn-<sc>OFF</sc> (ETO) (p-ETO) thyristor is reported and analyzed as a promising candidate for high-voltage applications, such as solid-state circuit breaker, HVdc, flexible alternating current transmission system (FACTS), and motor drives. The device is based on a 2 cm<sup>2 </sup> 22 kV p-type SiC gate turn-<sc>off</sc> thyristor (p-GTO) structure. Its static performances are analyzed exhibiting a high voltage (22 kV) blocking characteristic, ultralow leakage current, and a low forward voltage drop ( <inline-formula><tex-math notation="LaTeX">$\sim$</tex-math></inline-formula>7 V at 100 A) for a broad range of temperatures. The dynamic performances including turn-<sc>on</sc> and turn-<sc>off</sc> are studied. Key switching characteristics such as turn-<sc>off</sc> storage time, turn-<sc>off</sc> loss, <italic>dv/dt</italic>, and <italic> di/dt</italic> are presented and analyzed. In addition, the large reverse biased safe operation area (RBSOA) of the 22 kV SiC ETO is theoretically analyzed and verified by simulations and experimental tests.}, number={8}, journal={IEEE TRANSACTIONS ON POWER ELECTRONICS}, author={Song, Xiaoqing and Huang, Alex Q. and Lee, Meng-Chia and Peng, Chang}, year={2017}, month={Aug}, pages={6381–6393} }
 @article{peng_husain_huang_lequesne_briggs_2016, title={A Fast Mechanical Switch for Medium-Voltage Hybrid DC and AC Circuit Breakers}, volume={52}, ISSN={["1939-9367"]}, DOI={10.1109/tia.2016.2539122}, abstractNote={The paper presents the design and experimental results of a Thomson coil based fast mechanical switch for hybrid AC and DC circuit breakers rated at 30 kV voltage and 630 A current. The compact design with optimized circuit parameters and geometric dimensions of components targets 2 mm travel within 1 ms when driven by a 2 mF capacitor bank pre-charged to 500 V. The use and design of a disc spring as the damping and holding mechanism is presented. Structural design of a complete switch assembly rather than just the actuator is given. Experimental results show that the switch can travel 1.3 mm in the first 1 ms, and 3.1 mm in the first 2 ms when driven by a 360 V 2 mF capacitor bank. Such fast mechanical switches facilitate hybrid circuit breaker interruptions within 2 or 3 milliseconds for ultra fast and highly efficient protections in 5-35 kV medium voltage DC as well as AC systems.}, number={4}, journal={IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS}, author={Peng, Chang and Husain, Iqbal and Huang, Alex Q. and Lequesne, Bruno and Briggs, Roger}, year={2016}, pages={2911–2918} }
 @inproceedings{peng_mackey_husain_huang_lequesne_briggs_2016, title={Active damping of ultra-fast mechanical switches for hybrid AC and DC circuit breakers}, DOI={10.1109/ecce.2016.7854816}, abstractNote={An active damping method for Thomson coil actuated ultra-fast mechanical switches is proposed, including its control. Ultra fast mechanical switches are crucial for both DC and AC circuit breakers that require fast-acting, current-limiting capabilities. However, fast motion means high velocity at the end of travel, resulting in over-travel, bounce, fatigue, and other undesirable effects. The active damping proposed in this paper not only avoids such issues, but actually enables faster travel by removing limitations that would otherwise be necessary. This active damping mechanism is applicable in particular to medium and high voltage circuit breakers, but can be extended to actuators in general. A 15kV/630A/1ms mechanical switch, designed to enable the fast protection of medium voltage DC circuits, is used as a testbed for the concept. It is based on the principle of repulsion forces (Thomson coil actuator). By energizing a second coil, higher opening speeds can be damped with limited over-travel range of the movable contact. The overall structure is simple, and the size of the overall switch is minimized. To validate the concept and to study the timing control for best active damping performance, both finite element modeling and experimental studies have been carried out.}, booktitle={2016 ieee energy conversion congress and exposition (ecce)}, author={Peng, C. and Mackey, L. and Husain, I. and Huang, A. and Lequesne, B. and Briggs, R.}, year={2016} }
 @inproceedings{peng_huang_2016, title={Converting HVAC to HVDC grids: A novel switched conductor HVDC Scheme}, DOI={10.1109/tdc.2016.7520008}, abstractNote={This paper proposes a novel HVDC concept using a switched conductor scheme by converting AC circuits into DC to increase transmission capacity by 73.6%. The switched conductor HVDC scheme (SC-HVDC) modifies a thyristor based bipolar HVDC scheme and utilizes two additional active valves to achieve better utilization of the conducting circuit. Detailed analysis and calculation have proved this scheme very efficient in utilization of semiconductor devices and transformer equipment. PSCAD study has verified the feasibility of the SC-HVDC scheme. Comparison of SC-HVDC with HVAC transmission, bi-polar HVDC and tri-polar HVDC transmission technologies concludes that the switched conductor HVDC scheme has high power transfer capability, high equipment utilization, and simple control.}, booktitle={2016 IEEE/PES Transmission and Distribution Conference and Exposition (T&D)}, author={Peng, C. and Huang, A. Q.}, year={2016} }
 @inproceedings{peng_huang_husain_lequesne_briggs_2016, title={Drive circuits for ultra-fast and reliable actuation of Thomson coil actuators used in hybrid AC and DC circuit breakers}, DOI={10.1109/apec.2016.7468279}, abstractNote={Thomson coil actuators (also known as repulsion coil actuators) are well suited for vacuum circuit breakers when fast operation is desired such as for hybrid AC and DC circuit breaker applications. This paper presents investigations on how the actuator drive circuit configurations as well as their discharging pulse patterns affect the magnetic force and therefore the acceleration, as well as the mechanical robustness of these actuators. Comprehensive multi-physics finite-element simulations of the Thomson coil actuated fast mechanical switch are carried out to study the operation transients and how to maximize the actuation speed. Different drive circuits are compared: three single switch circuits are evaluated; the pulse pattern of a typical pulse forming network circuit is studied, concerning both actuation speed and maximum stress; a two stage drive circuit is also investigated. A 630 A, 15 kV / 1 ms prototype employing a vacuum interrupter with 6 mm maximum open gap was developed and tested. The total moving mass accelerated by the actuator is about 1.2 kg. The measured results match well with simulated results in the FEA study.}, booktitle={Apec 2016 31st annual ieee applied power electronics conference and exposition}, author={Peng, C. and Huang, A. and Husain, I. and Lequesne, B. and Briggs, R.}, year={2016}, pages={2927–2934} }
 @inproceedings{tan_song_pcng_liu_huang_2016, title={Hierarchical protection architecture for 380v dc data center application}, DOI={10.1109/ecce.2016.7855145}, abstractNote={The DC distribution system is becoming an appealing spot due to its higher energy efficiency in recent years. Nowadays, it has been already applied in data centers, commercial buildings, electrical vehicles charger station and DC micro grid systems, etc. However, there are a lot of challenges in DC application which is not critical in traditional AC system, such as arcing, capacitive charging and discharging, etc. All of them make the protection strategy and architecture an important issue for DC application. In this paper, one 3-level hierarchy circuit protection architecture is proposed with developed solid state circuit protection hardware. It is designed with considering the power rating for DC data center load conditions. Analysis and experimental results based on 380V DC voltage have been conducted and discussed.}, booktitle={2016 ieee energy conversion congress and exposition (ecce)}, author={Tan, K. and Song, X. Q. and Pcng, C. and Liu, P. and Huang, A. Q.}, year={2016} }
 @inproceedings{song_huang_peng_zhang_2016, title={Improved 6.5kV FREEMD-pair based on SiC JFET and Si IGBT}, DOI={10.1109/apec.2016.7467883}, abstractNote={The newly proposed FREEDM-Pair is an ideal and economical solution to address high cost issue in high power SiC power devices. The FREEDM-Pair, in which a Si IGBT and a SiC JFET are connected in parallel, combines the advantages of SiC JFET's low switching losses and Si IGBT's superior forward conduction characteristics. One issue of the JFET based FREEDM-Pair is the incompatible gate drive voltage for the SiC JFET and Si IGBT which complicates the gate driver design and increases the total cost. Also, the high voltage SiC JBS reverse diode in FREEDM-Pair is indispensable for the reverse current conduction, leading to higher cost and larger package size. To address these issues, an improved FREEDM-Pair is proposed in this paper, in which the SiC JBS diode is eliminated and the normally-off SiC JFET is operated in cascode configuration to unify the gate driver voltage level and speed up the switching of the JFET. The design and operation of improved FREEDM-Pair is elaborated and experimental results verified its advantages. Also, the affordable cost demonstrates that this promising concept is an ideal step to introduce high voltage SiC power devices.}, booktitle={Apec 2016 31st annual ieee applied power electronics conference and exposition}, author={Song, X. Q. and Huang, A. Q. and Peng, C. and Zhang, L. Q.}, year={2016}, pages={269–275} }
 @inproceedings{tan_liu_ni_peng_song_huang_2016, title={Performance evaluation of multiple Si and SiC solid state devices for circuit breaker application in 380VDC delivery system}, DOI={10.1109/apec.2016.7467990}, abstractNote={The DC power delivery system is becoming an appealing research topic and real world solution due to its higher energy efficiency compare with AC delivery system. It has already been applied in data centers, commercial buildings, electrical vehicle charge stations and micro grid systems, etc. Among many new issues that need to be addressed for the DC power delivery system, ultra-fast and accurate protection is one of them. The 1200V SiC devices has been developed by many manufacturers in recent years which makes them good candidates in DC circuit breaker application. In this paper, the 380V DC circuit breaker employing solid state devices for DC power delivery system has been proposed and introduced. The criteria of device characteristics particularly for DC solid state circuit breaker application is discussed and defined. Characteristics of 4 different Si and SiC solid state devices in similar power rating have been compared based on defined criteria. The pros and cons of different devices candidates is introduced with test results for DC circuit breaker application.}, booktitle={Apec 2016 31st annual ieee applied power electronics conference and exposition}, author={Tan, K. and Liu, P. K. and Ni, X. J. and Peng, C. and Song, X. Q. and Huang, A. Q.}, year={2016}, pages={983–989} }
 @inproceedings{tan_peng_liu_song_huang_2016, title={Zero standby power high efficiency hot plugging outlet for 380VDC power delivery system}, DOI={10.1109/apec.2016.7467863}, abstractNote={The DC power delivery system is becoming an appealing research topic and real world solution due to its higher energy efficiency compared with AC delivery system. It has already been applied in data centers, commercial buildings, electrical vehicle charge stations and micro grid systems, etc. However, the electrical arc and related potential for fire and human injury is a main safety concern for the DC system. Besides, the inrush current caused by the load capacitance when hot plugged in to the DC system is also a major issue that must be considered when designing DC system. In this paper, a smart hot plugging outlet is proposed and developed by embedding solid state device into the DC outlet. Besides, over temperature and dual threshold over current protections have been also integrated to realize current limiting and trip function for each outlet. Analysis and experimental results based on 380V DC, which is a common voltage level adopted in data centers and DC micro grids, are discussed and presented.}, booktitle={Apec 2016 31st annual ieee applied power electronics conference and exposition}, author={Tan, K. and Peng, C. and Liu, P. K. and Song, X. Q. and Huang, A. Q.}, year={2016}, pages={132–137} }
 @inproceedings{song_huang_lee_peng_cheng_o'brien_ogunniyi_scozzie_palmour_2015, title={22 kV SiC emitter turn-off (ETO) thyristor and Its dynamic performance including SOA}, DOI={10.1109/ispsd.2015.7123443}, abstractNote={Ultra-high voltage (>10 kV) power devices based on SiC are gaining significant attentions since Si power devices are typically at lower voltage levels. In this paper, a world record 22kV Silicon Carbide (SiC) p-type ETO thyristor is developed and reported as a promising candidate for ultra-high voltage applications. The device is based on a 2cm2 22kV p type gate turn off thyristor (p-GTO) structure. Its static as well as dynamic performances are analyzed, including the anode to cathode blocking characteristics, forward conduction characteristics at different temperatures, turn-on and turn-off dynamic performances. The turn-off energy at 6kV, 7kV and 8kV respectively is also presented. In addition, theoretical boundary of the reverse biased safe operation area (RBSOA) of the 22kV SiC ETO is obtained by simulations and the experimental test also demonstrated a wide RBSOA.}, booktitle={Proceedings of the international symposium on power semiconductor}, author={Song, X. Q. and Huang, A. Q. and Lee, M. C. and Peng, C. and Cheng, L. and O'Brien, H. and Ogunniyi, A. and Scozzie, C. and Palmour, J.}, year={2015}, pages={277–280} }
 @inproceedings{peng_husain_huang_lequesne_briggs_2015, title={A past mechanical switch for medium voltage hybrid DC and AC circuit breakers}, booktitle={2015 ieee energy conversion congress and exposition (ecce)}, author={Peng, C. and Husain, I. and Huang, A. and Lequesne, B. and Briggs, R.}, year={2015}, pages={5211–5218} }
 @inproceedings{peng_huang_song_2015, title={Current commutation in a medium voltage hybrid DC circuit breaker using 15 kV vacuum switch and SiC devices}, DOI={10.1109/apec.2015.7104661}, abstractNote={Analysis and experimental study of current commutation in an ultra-fast, current limiting, hybrid DC circuit breaker for medium voltage applications is reported in this paper. The hybrid DCCB consists a fast acting 15 kV mechanical switch, a low voltage commutating switch, a single 15 kV Silicon Carbide Emitter Turn Off Thyristor (ETO) device, and a stack of MOVs. The proof-of-concept prototype is able to conduct 45 A normal current and interrupt a maximum of more than 100 A fault current at medium voltage level in less than 4 milliseconds, which is one order of magnitude faster compared to conventional mechanical circuit breakers that typically take 40-100 ms. This paper has presented the operation principle of a hybrid DC circuit breaker and analyzed the current commutation process. Based on the analysis, guidelines are given in the paper to select and design the commutating switch.}, booktitle={2015 thirtieth annual ieee applied power electronics conference and exposition (apec 2015)}, author={Peng, C. and Huang, A. Q. and Song, X. Q.}, year={2015}, pages={2244–2250} }
 @inproceedings{huang_peng_song_2015, title={Design and development of a 7.2 kV/200A hybrid circuit breaker based on 15 kV SiC emitter turn-off (ETO) thyristor}, DOI={10.1109/ests.2015.7157909}, abstractNote={This paper deals with the design of a 7.2 kV, 200 A hybrid AC circuit breaker employing a 15 kV Silicon Carbide (SiC) Emitter Turn-off (ETO) thyristor device as the main semiconductor switch and presents the test results to verify the functions of both the high voltage and low voltage electronic components of the medium voltage hybrid circuit breaker. The hybrid circuit breaker consists a fast acting mechanical switch, a low voltage commutating switch in series with that mechanical switch, a single 15 kV SiC ETO Thyristor device, and a stack of MOVs. This paper focuses on the electronic parts and a companion paper would elucidate the principle and operation of the fast acting mechanical switch. To fulfill bidirectional interruption capability of the high voltage semiconductor device, the SiC ETO is equipped with a low cost silicon diode bridge; a snubber capacitor is equipped in parallel with this diode bridge to alleviate voltage stress of the ETO during turn-off transients. A compact low voltage commutating switch based on silicon MOSFETs has been built and tested up to the full current rating.}, booktitle={2015 IEEE Electric Ship Technologies Symposium (ESTS)}, author={Huang, A. and Peng, C. and Song, X. Q.}, year={2015}, pages={306–311} }
 @inproceedings{peng_husain_huang_2015, title={Evaluation of design variables in Thompson coil based operating mechanisms for ultra-fast opening in hybrid AC and DC circuit breakers}, DOI={10.1109/apec.2015.7104673}, abstractNote={The paper presents the operation transient analysis and multi-physics complexities in the design of a Thompson coil based ultra-fast mechanical switch for hybrid AC and DC circuit breakers. The electromagnetic, mechanical and thermal behavior of the switch has been analyzed through simulation using a multi-physics finite element software. The design variables have been classified into lumped circuit and geometric parameters; the sensitivity analysis by means of systematic and comprehensive simulations on these parameters helped establish the design guidelines. The switch has been designed with optimization for both the circuit parameters and geometrical dimensions of components targeting 2 mm travel for separation within 1 ms.}, booktitle={2015 thirtieth annual ieee applied power electronics conference and exposition (apec 2015)}, author={Peng, C. and Husain, I. and Huang, A. Q.}, year={2015}, pages={2325–2332} }
 @inproceedings{song_huang_lee_peng_2015, title={High voltage Si/SiC hybrid switch: An ideal next step for SiC}, DOI={10.1109/ispsd.2015.7123446}, abstractNote={Silicon carbide (SiC) power switches such as MOSFET or JFET have demonstrated their superior advantages over silicon (Si) power devices such as IGBT, especially in terms of significantly reduced switching losses. A major issue facing large scale adoption of SiC power devices is still the much higher cost. This paper proposes that Si/SiC hybrid switch should be a natural next step moving forward for high voltage applications to address the cost issue. In the proposed Si/SiC hybrid switch, a SiC MOSFET is connected in parallel with Si IGBT to combine the advantages of IGBT and MOSFET. This concept can also works well with SiC JFET. A 6.5 kV Si IGBT and SiC MOSFET hybrid switch is developed as an example to demonstrate its superior cost/performance. The switching loss can be reduced by more than 70% at a cost of only 50% higher compared to Si IGBT. This work is especially essential for high voltage applications such as medium voltage motor drive, FACTS and HVDC systems.}, booktitle={Proceedings of the international symposium on power semiconductor}, author={Song, X. Q. and Huang, A. Q. and Lee, M. C. and Peng, C.}, year={2015}, pages={289–292} }
 @inproceedings{liang_huang_sung_lee_song_peng_cheng_palmour_scozzie_2015, title={Turn-on capability of 22 kV SiC Fmitter Turn-off (ETO) Thyristor}, DOI={10.1109/wipda.2015.7369275}, abstractNote={The turn-on characteristics for the SiC p-ETO are researched in this paper. By establishing the two-dimensional numerical model of the SiC p-ETO, the influence of the device parameters and external circuit conditions on the turn-on speed is discussed. The experiments agree with the simulated results well. The npn turn-on mode of ETO is captured in a high di/dt experiment, which proves the existence of the FBSOA for this time hence the possibility of its application in converters without di/dt snubber. According to the intrinsic temperature limitation of the SiC material, the simulation shows that the peak power density of the SiC p-ETO during turn-on could reach several tens of MW/cm2.}, booktitle={WiPDA 2015 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications}, author={Liang, L. and Huang, A. Q. and Sung, W. J. and Lee, M. C. and Song, X. Q. and Peng, C. and Cheng, L. and Palmour, J. and Scozzie, C.}, year={2015}, pages={192–195} }
 @inproceedings{peng_huang_2014, title={A protection scheme against DC Faults VSC based DC Systems with bus capacitors}, DOI={10.1109/apec.2014.6803800}, abstractNote={This paper describes a novel protection method to limit the fault currents caused by short circuit in a voltage source converter (VSC) based DC systems with capacitors connected to the DC bus. Analyzing the development of DC fault current in such DC systems shows that capacitor discharge dominates the very rapid fault current rising at the instance of faults. If this high slope fault current surge is not limited, stored energy in the capacitor will cause hazard to personals as well as connected equipment. If the discharging current from the DC bus capacitor is not limited, it will require much higher break capability of the DC breakers. Therefore a novel protection method is proposed to limit the DC fault currents by detecting and interrupting the DC capacitor discharge using a solid state circuit breaker (capacitor SSCB) which is connected in series with the DC bus capacitor. Implementing this new method will effectively reduce peak value of the fault current, alleviate current stress of diodes in VSC bridges, in a way that only local current information is required. It needs no external control signals, and power loss of this capacitor SSCB is relatively low. Both simulations and tests have proved this method to be effective.}, booktitle={2014 twenty-ninth annual ieee applied power electronics conference and exposition (apec)}, author={Peng, C. and Huang, A. Q.}, year={2014}, pages={3423–3428} }