@article{akouala_kumar_punugupati_reynolds_reynolds_mily_maria_narayan_hunte_2019, title={Planar Hall effect and anisotropic magnetoresistance in semiconducting and conducting oxide thin films}, volume={125}, ISSN={0947-8396 1432-0630}, url={http://dx.doi.org/10.1007/S00339-019-2592-Y}, DOI={10.1007/s00339-019-2592-y}, number={5}, journal={Applied Physics A}, publisher={Springer Science and Business Media LLC}, author={Akouala, Christer R. and Kumar, Raj and Punugupati, Sandhyarani and Reynolds, C. Lewis and Reynolds, Judith G. and Mily, Edward J. and Maria, Jon-Paul and Narayan, Jagdish and Hunte, Frank}, year={2019}, month={Apr} }
 @article{bryan_akouala_tweedie_bryan_rice_kirste_collazo_sitar_2014, title={Surface preparation of non-polar single-crystalline AlN substrates}, volume={11}, ISSN={["1862-6351"]}, DOI={10.1002/pssc.201300401}, abstractNote={Abstract}, number={3-4}, journal={PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4}, author={Bryan, Isaac and Akouala, Christer-Rajiv and Tweedie, James and Bryan, Zachary and Rice, Anthony and Kirste, Ronny and Collazo, Ramon and Sitar, Zlatko}, year={2014}, pages={454–457} }
 @article{guo_xie_akouala_mita_rice_tweedie_bryan_collazo_sitar_2013, title={Comparative study of etching high crystalline quality AlN and GaN}, volume={366}, ISSN={["1873-5002"]}, DOI={10.1016/j.jcrysgro.2012.12.141}, abstractNote={High-quality AlN and GaN bulk crystals were etched in a KOH aqueous solution or a KOH/H2O2 mixture. As etched surfaces were characterized by scanning electron microscope (SEM), atomic force microscope (AFM), and X-ray photoelectron spectroscopy (XPS). It was found that the N-polar surfaces had approximately 900 and 20 times higher etch rate than the III-polar surface for AlN and GaN, respectively. AlN had a higher total etch rate than GaN at the same condition. Hexagonal hillocks were observed on N-polar face with {10−1−1} boundary planes for both AlN and GaN, while metal polar surfaces remained smooth. Formation of aluminum oxide/hydroxide AlOx(OH)y was confirmed by XPS on as etched N polar AlN surface; the addition of H2O2 resulted in a higher total surface oxygen concentration. The smoothening effect by adding H2O2 oxidizer was explained by the formation and dissolution of aluminum oxide/hydroxide.}, journal={JOURNAL OF CRYSTAL GROWTH}, author={Guo, W. and Xie, J. and Akouala, C. and Mita, S. and Rice, A. and Tweedie, J. and Bryan, I. and Collazo, R. and Sitar, Z.}, year={2013}, month={Mar}, pages={20–25} }
 @article{hussey_mita_xie_guo_akouala_rajan_bryan_collazo_sitar_2012, title={Lateral epitaxial overgrowth of nitrogen polar GaN on smooth nitrogen polar GaN templates by metalorganic chemical vapor deposition}, volume={112}, ISSN={["1089-7550"]}, DOI={10.1063/1.4768526}, abstractNote={Nitrogen (N)-polar GaN lateral epitaxial overgrowth (LEO), with a reduced dislocation density, is grown by metalorganic chemical vapor deposition on patterned, smooth N-polar templates. For LEO growth conditions identical to that of smooth N-polar GaN on sapphire, mask orientation dependent morphologies and faceting of the overgrowth regions are observed. N-polar LEO oriented along the 〈1-100〉 direction exhibit flat sidewall morphologies while LEO oriented along the 〈11-20〉 direction exhibit inclined sidewalls. A lateral to vertical growth ratio for the 〈1-100〉 and 〈11-20〉 oriented LEO was found to be ∼0.3 and 0.2, respectively. Transmission electron microscope observations reveal a reduction of dislocations of up to three orders of magnitude in the overgrowth regions from ∼1010 cm−2 in the template. Additionally, dislocation bending likely initiated from interfacial tension between the N-polar GaN and SiO2 mask is observed, resulting in a reduction of dislocation density to ∼109 cm−2 in the window region of re-growth.}, number={11}, journal={JOURNAL OF APPLIED PHYSICS}, author={Hussey, Lindsay and Mita, Seiji and Xie, Jinqiao and Guo, Wei and Akouala, Christer-Rajiv and Rajan, Joseph and Bryan, Isaac and Collazo, Ramon and Sitar, Zlatko}, year={2012}, month={Dec} }
 @article{tweedie_collazo_rice_mita_xie_akouala_sitar_2012, title={Schottky barrier and interface chemistry for Ni contacted to Al0.8Ga0.2N grown on c-oriented AlN single crystal substrates}, volume={9}, ISSN={["1862-6351"]}, DOI={10.1002/pssc.201100435}, abstractNote={Abstract}, number={3-4}, journal={PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4}, author={Tweedie, James and Collazo, Ramon and Rice, Anthony and Mita, Seiji and Xie, Jinqiao and Akouala, Rajiv-Christer and Sitar, Zlatko}, year={2012}, pages={584–587} }
 @inproceedings{hoffmann_gerhold_kirste_rice_akouala_xie_mita_collazo_sitar, title={Fabrication and characterization of lateral polar GaN structures for second harmonic generation}, volume={8631}, booktitle={Quantum sensing and nanophotonic devices x}, author={Hoffmann, M. P. and Gerhold, M. and Kirste, R. and Rice, A. and Akouala, C. R. and Xie, J. Q. Q. and Mita, S. and Collazo, R. and Sitar, Z.} }