@article{zoellner_hou_carbone_kiether_markham_cuomo_maggard_2018, title={Activating the Growth of High Surface Area Alumina Using a Liquid Galinstan Alloy}, volume={3}, ISSN={["2470-1343"]}, DOI={10.1021/acsomega.8b02442}, abstractNote={The growth of high surface area alumina has been investigated with the use of a liquid Galinstan alloy [66.5% (wt %) Ga, 20.5% In and 13.0% Sn] as an activator for aluminum. In this process, the aluminum is slowly dissolved into the gallium-indium-tin alloy, which is then selectively oxidized at ambient temperature and pressure under a humid stream of flowing CO2 or N2 to yield amorphous alumina. This preparative route represents a simple and low toxicity approach to obtain amorphous high surface area alumina with very low water content. The as-synthesized high surface area alumina aerogel was a blue-colored solid owing to the Rayleigh scattering by its dendritic fibrous nanostructure consisting of mainly alumina with small amounts of water. Upon annealing at 850 °C, the amorphous product transformed into γ-Al2O3, as well as θ-Al2O3 upon annealing at 1050 °C. Elemental analysis by energy-dispersive spectroscopy provides further evidence that the high surface area alumina is composed of only aluminum and oxygen. The surface area of the amorphous alumina varied from ∼79 to ∼140 m2/g, depending on the initial weight percentage of aluminum used in the alloy. A correlation between the initial concentration of aluminum in the alloy and the surface area of the alumina product was found to peak at ∼30% Al. These results suggest a novel route to the formation of amorphous alumina aerogel-type materials.}, number={12}, journal={ACS OMEGA}, author={Zoellner, Brandon and Hou, Feier and Carbone, Abigail and Kiether, William and Markham, Keith and Cuomo, Jerome and Maggard, Paul A.}, year={2018}, month={Dec}, pages={16409–16415} }
 @article{mcclure_thornton_jiang_chu_cuomo_fedkiw_2012, title={Oxygen Reduction on Metal-Free Nitrogen-Doped Carbon Nanowall Electrodes}, volume={159}, ISSN={["1945-7111"]}, DOI={10.1149/2.056211jes}, abstractNote={A plasma-enhanced chemical vapor deposition (PECVD) process using a CH4:H2 gas mixture creates vertically aligned carbon nanowalls (CNWs) on glassy carbon (GC) and Si substrates. Metal catalysts are not required for the nucleation and growth of CNWs on the substrates. The PECVD deposition temperatures and reaction times alter the morphology and thickness of the resulting CNW layer. A low-pressure, post-processing N2:Ar plasma treatment dopes the CNWs with nitrogen, and X-ray photoelectron spectroscopy measurements demonstrate that nitrogen is present at 4–20 atomic% with varying CNx bonding configurations dependent upon processing conditions. Raman spectroscopy shows relatively high intensity disorder bands (ID) compared to lower intensity graphitic bands (IG) indicating small crystalline domains. Rotating disk electrode voltammetry results show that the number of electrons (n) and kinetic current density (jk) of the oxygen reduction reaction both increase with nitrogen content. In addition, n and jk increase with thickness of the nitrogen-containing CNW deposit. The results indicate that nitrogen-doped CNWs have higher electrochemical reactivity than their non-doped counterparts.}, number={11}, journal={JOURNAL OF THE ELECTROCHEMICAL SOCIETY}, author={McClure, Joshua P. and Thornton, Jackson D. and Jiang, Rongzhong and Chu, Deryn and Cuomo, Jerome J. and Fedkiw, Peter S.}, year={2012}, pages={F733–F742} }
 @article{cho_han_cuomo_2008, title={Ion beam pretreatment of polymeric substrates for ITO thin film deposition}, volume={10}, ISSN={["1873-3085"]}, DOI={10.1016/j.solidstatesciences.2007.11.010}, abstractNote={Polycarbonate (PC) surfaces were pretreated by an 1 keV Ar+ ion irradiation in oxygen environment to improve surface properties before depositing indium tin oxide (ITO) films. The hydrophobic PC surfaces were converted into more hydrophilic ones after a surface modification. Improved wettability of the treated PC surfaces was due to the formation of new polar groups on the surfaces, responsible for the increase of polar component in the surface energy. Chemical interaction between unstable chains induced by energetic ion bombardment and oxygen gas resulted in the formation of the polar groups, which were identified as oxygen containing carbon bonds such as carbonyl by the XPS study. In the initial growth stage of the ITO films on the PC substrates, the newly formed polar groups prevented hill-locks from growing on the surfaces, which contributed to the improvement of thermal stability in the ITO thin films on the modified PC substrates. The Ar+ ion irradiation in oxygen environment also led to a significant adhesion enhancement of PC substrates to ITO films which was explained in terms of the physical and chemical changes on the PC surfaces.}, number={7}, journal={SOLID STATE SCIENCES}, author={Cho, Jun-Sik and Han, Younggun and Cuomo, Jerome J.}, year={2008}, month={Jul}, pages={941–949} }
 @article{rabiei_thomas_neville_lee_cuomo_2007, title={A novel technique for processing functionally graded HA coatings}, volume={27}, ISSN={["0928-4931"]}, DOI={10.1016/j.msec.2006.05.037}, abstractNote={Hydroxyapatite (HA) films were deposited using dual ion beam sputtering. Deposition was carried out with an in situ heat treatment at three temperature settings during deposition. X-ray diffraction of the films at the surface revealed that the deposited film is composed of hydroxyapatite crystalline and amorphous phases. Cross-sectional transmission electron microscopy analysis displayed that the films have a graded crystal structure with the crystalline layer near the substrate and the amorphous layer at the top surface. Compositional analysis was performed using SEM-EDX at the top surface as well as STEM-EDX at the cross-section of the film. The average calcium to phosphorous ratio at the surface is 1.46, obtained by SEM-EDX. The Ca/P ratios in the crystalline and amorphous layers of the film are 1.6 to 1.7, close to the ratio of 1.67 for HA.}, number={3}, journal={MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS}, author={Rabiei, A. and Thomas, B. and Neville, B. and Lee, J. W. and Cuomo, J.}, year={2007}, month={Apr}, pages={523–528} }
 @article{rabiei_blalock_thomas_cuomo_yang_ong_2007, title={Microstructure, mechanical properties, and biological response to functionally graded HA coatings}, volume={27}, ISSN={["0928-4931"]}, DOI={10.1016/j.msec.2006.05.036}, abstractNote={Hydroxyapatite (HA) [Ca10(PO4)6(OH)2] is the primary mineral content, representing 43% by weight, of bone. Applying a thin layer of HA, to the surface of a metal implant, can promote osseointegration and increase the mechanical stability of the implant. In this study, a biocompatible coating comprising an HA film with functionally graded crystallinity is being deposited on a heated substrate in an Ion Beam Assisted Deposition (IBAD) system. The microstructure of the film was studied using Transmission Electron Microscopy techniques. Finally, initial cell adhesion and cell differentiation on the coating was evaluated using ATCC CRL 1486 human embryonic palatal mesenchymal cell, an osteoblast precursor cell line. The results have shown superior mechanical properties and biological response to the functionally graded HA film.}, number={3}, journal={MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS}, author={Rabiei, Afsaneh and Blalock, Travis and Thomas, Brent and Cuomo, Jerry and Yang, Y. and Ong, Joo}, year={2007}, month={Apr}, pages={529–533} }
 @article{rabiei_thomas_jin_narayan_cuomo_yang_ong_2006, title={A study on functionally graded HA coatings processed using ion beam assisted deposition with in situ heat treatment}, volume={200}, ISSN={["0257-8972"]}, DOI={10.1016/j.surfcoat.2005.09.027}, abstractNote={A new generation of calcium phosphate coatings with less than 1 μm thickness and graded crystallinity through the thickness of the film has been processed using ion beam assisted deposition (IBAD) and in situ heat treatment. Microstructural analysis of the film confirmed a gradual decrease of the grain size and crystallinity towards the surface, leading to nano-scale grains and eventually amorphous layer at the surface. The mechanical properties and adhesion bonding of the film have been evaluated using microscratch and nanoindentation tests and, in general, functionally graded HA films deposited using our IBAD system together with in situ heat treatment demonstrated higher modulus and hardness values than sputter-deposited films with the same thickness as well as those appearing in the literature for sintered HA. Scratch test results of both sets of samples revealed that crack formation is more common in sputter-deposited HA film than in the functionally graded HA film deposited using IBAD and in situ heat treatment. We anticipate that the functionally graded hydroxyapatite films will provide improved tissue–implant interfaces for orthopedic and dental implants.}, number={20-21}, journal={SURFACE & COATINGS TECHNOLOGY}, author={Rabiei, A and Thomas, B and Jin, C and Narayan, R and Cuomo, J and Yang, Y and Ong, JL}, year={2006}, month={May}, pages={6111–6116} }
 @article{lee_cuomo_cho_keusseyan_2005, title={Aluminum nitride thin films on an LTCC substrate}, volume={88}, ISSN={["1551-2916"]}, DOI={10.1111/j.1551-2916.2005.00250.x}, abstractNote={ Aluminum nitride thin films deposited on a low‐temperature co‐fired ceramics substrate by reactive magnetron sputtering were investigated with regard to their crystal orientation and microstructural characteristics. Strong c‐axis orientations of AlN thin films were observed when either a higher deposition temperature or an RF bias was adopted. This orientation was believed to be responsible for the high thermal conductivity of 26 W/mK for the AlN films deposited at 700°C under 25‐W bias. Photoluminescence spectrum in the wavelength range of 350–650 nm was analyzed to prove the involvement of potential oxygen‐related defects in the thin films. }, number={7}, journal={JOURNAL OF THE AMERICAN CERAMIC SOCIETY}, author={Lee, JW and Cuomo, JJ and Cho, YS and Keusseyan, RL}, year={2005}, month={Jul}, pages={1977–1980} }
 @misc{cuomo_williams_hanser_carlson_thomas_2004, title={MIIIN based materials and methods and apparatus for producing same}, volume={6,784,085}, number={2004 Aug. 31}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Cuomo, J. J. and Williams, N. M. and Hanser, A. D. and Carlson, E. P. and Thomas, D. T.}, year={2004}, month={Aug} }
 @misc{cuomo_williams_2004, title={Non-thermionic sputter material transport device, methods of use, and materials produced thereby}, volume={6,787,010}, number={2004 Sept. 7}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Cuomo, J. J. and Williams, N. M.}, year={2004}, month={Sep} }
 @article{lee_cuomo_bourham_2004, title={Plasma characteristics in pulsed direct current reactive magnetron sputtering of aluminum nitride thin films}, volume={22}, ISSN={["1520-8559"]}, DOI={10.1116/1.1641049}, abstractNote={Plasma diagnostics is important to identify plasma parameters and generate reproducible plasma in magnetron sputtering. Langmuir probes have been used to measure local plasma parameters such as electron temperature (Te), charge densities (ne and ni), and plasma potential (Vp). Pulsed direct current (dc) power in the midfrequency range (50–250 kHz) has been used in growing insulating films without charging accumulations at target. Recent investigations showed increased energetic particle bombardment of the substrate in pulsed power. In this work, aluminum nitride thin films were fabricated by pulsed dc power sputter deposition. The argon and nitrogen plasma was characterized by Langmuir probe measurement. The electron temperature in argon and nitrogen plasma was observed to increased from 3.06 to 5.32 eV when the pulsed dc frequency increased from 75 to 250 kHz. The ion density and energy flux were found to increase with frequency. This is believed to be from the stochastic heating generated by the fast oscillation in the target voltage wave form. The measured plasma characteristics were correlated with the crystal orientation of AlN thin films. The crystal structure of AlN thin films changed to (002) preferred orientations as the ion and energy flux increased.}, number={2}, journal={Journal of Vacuum Science & Technology A}, author={Lee, Jung W. and Cuomo, Jerome J. and Bourham, Mohamed A.}, year={2004}, month={Mar}, pages={260–263} }
 @article{park_cuomo_rodriguez_yang_nemanich_ambacher_2003, title={Micro-Raman study of electronic properties of inversion domains in GaN-based lateral polarity heterostructures}, volume={93}, ISSN={["1089-7550"]}, DOI={10.1063/1.1570507}, abstractNote={The electronic properties of inversion domains in a GaN-based lateral polarity heterostructure were investigated using micro-Raman spectroscopy. The piezoelectric polarization of each domain was calculated from strain determined via Raman scattering. The free carrier concentration and electron mobility were deduced from the longitudinal optical phonon–plasmon coupled mode. The electron concentration in the N-face domain was slightly higher than that in the Ga-face domain. It appears that during growth, a larger number of donor impurities may have been incorporated into the N-face domain than into the Ga-face domain.}, number={12}, journal={JOURNAL OF APPLIED PHYSICS}, author={Park, M and Cuomo, JJ and Rodriguez, BJ and Yang, WC and Nemanich, RJ and Ambacher, O}, year={2003}, month={Jun}, pages={9542–9547} }
 @article{chang_cai_muth_kolbas_park_cuomo_hanser_bumgarner_2003, title={Optical and structural studies of hydride vapor phase epitaxy grown GaN}, volume={21}, ISSN={["0734-2101"]}, DOI={10.1116/1.1568346}, abstractNote={Thick films of hydride vapor phase epitaxy (HVPE) grown GaN were studied by various techniques. Time-integrated and time-resolved photoluminescence (PL) measurements were performed at room temperature and 77 K. The time-integrated PL spectrum has no observed deep-level transitions and a very narrow linewidth, which indicates good material quality. Time-resolved PL spectra are also presented and the temporal evolution of the PL around the band-gap exhibits a biexponential decay with a fast and a slow decay component. Cathodoluminescence, x-ray, and Raman spectroscopy were also used. The full width half maximum of the x-ray rocking curve for our sample is approximately 375 arcsec. The polarized Raman spectra exhibited only the allowed modes. The deposited GaN films were found to be relatively stress free. The x ray and Raman analysis also revealed that the HVPE-grown GaN films are of high crystal quality. The effect of thermal annealing on the sample was also investigated by time-integrated and time-resolved PL and Raman spectroscopy. No significant changes in the material were observed in either time-integrated or Raman spectroscopy. The film was thermally stable upon annealing up to 1000 °C in N2 ambient based on the results of these measurements. In time-resolve photoluminescence measurement, the temporal evolution of the band-edge transitions broadens after each annealing step and is significantly different after the 1000 °C anneal.}, number={3}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A}, author={Chang, YC and Cai, AL and Muth, JF and Kolbas, RM and Park, M and Cuomo, JJ and Hanser, A and Bumgarner, J}, year={2003}, pages={701–705} }
 @misc{ufer_cuomo_2003, title={Pattern release film between two laminated surfaces}, volume={6,627,034}, number={2003 Sept. 30}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Ufer, S. and Cuomo, J. J.}, year={2003}, month={Sep} }
 @article{park_sakhrani_maria_cuomo_teng_muth_ware_rodriguez_nemanich_2003, title={Wavelength-dependent Raman scattering of hydrogenated amorphous silicon carbon with red, green, and blue light excitation}, volume={18}, ISSN={["2044-5326"]}, DOI={10.1557/JMR.2003.0106}, abstractNote={This study presents results of wavelength-dependent Raman scattering from amorphous silicon carbon (a-Si:C:H). The a-Si:C:H films were produced by radio-frequency plasma-enhanced chemical vapor deposition. Prior results with amorphous carbon indicate that laser excitation selectively probes clusters with differing sizes. Our measurements with a-Si:C:H indicate that when using red (632.8 nm), green (514.5 nm), and blue (488.0 nm) excitation, the Raman D and G peaks shift to higher wave numbers as the excitation energy increases. The higher frequency is associated with smaller clusters that are preferentially excited with higher photon energy. It appears that photoluminescence occurs due to radiative recombination from intracluster transitions in Si-alloyed sp2-bonded carbon clusters}, number={4}, journal={JOURNAL OF MATERIALS RESEARCH}, author={Park, M and Sakhrani, V and Maria, JP and Cuomo, JJ and Teng, CW and Muth, JF and Ware, ME and Rodriguez, BJ and Nemanich, RJ}, year={2003}, month={Apr}, pages={768–771} }
 @misc{wear-resistant polymeric articles and methods of making the same_2003, volume={6,582,823}, number={2003 June 24}, publisher={Washington, DC: U.S. Patent and Trademark Office}, year={2003}, month={Jun} }
 @article{mccord_hwang_hauser_qiu_cuomo_hankins_bourham_canup_2002, title={Modifying nylon and polypropylene fabrics with atmospheric pressure plasmas}, volume={72}, ISSN={["0040-5175"]}, DOI={10.1177/004051750207200605}, abstractNote={ Polypropylene and nylon 66 fabrics are subjected to atmospheric pressure He and He-O2 plasmas for selected exposure time intervals. Scanning electron microscopy anal ysis of the fabrics shows no apparent changes in the plasma-treated nylon fiber surfaces, but significant surface morphological changes for the polypropylene. Surface analyses of the nylon filaments reveal small differences in the surface carbon and oxygen contents between the treated and control groups. The surface oxygen and nitrogen content of the polypropylene fabric increases significantly after treatment in both He and He-O2 plasmas. There is a slight decrease in nylon fabric tensile strength after treatment in He plasma for 3 minutes, while. there is no significant change in tensile strength of the nylon fabric treated with He-O2 after exposure times of up to 8 minutes. }, number={6}, journal={TEXTILE RESEARCH JOURNAL}, author={McCord, MG and Hwang, YJ and Hauser, PJ and Qiu, Y and Cuomo, JJ and Hankins, OE and Bourham, MA and Canup, LK}, year={2002}, month={Jun}, pages={491–498} }
 @article{park_maria_cuomo_chang_muth_kolbas_nemanich_carlson_bumgarner_2002, title={X-ray and Raman analyses of GaN produced by ultrahigh-rate magnetron sputter epitaxy}, volume={81}, ISSN={["0003-6951"]}, DOI={10.1063/1.1506781}, abstractNote={Thick films of GaN were studied by x-ray diffraction and Raman spectroscopy. The GaN thick films were deposited on (0001) sapphire using ultrahigh-rate magnetron sputter epitaxy with typical growth rates as high as 10–60 μm/min. The width of the x-ray rocking curve from the (0002) reflection for the sample produced by this technique is ∼300 arcsec, which is unprecedented for GaN produced by a sputtering-type process. Our recent sample shows an x-ray rocking curve width of 240 arcsec. Only allowed modes were observed in the polarized Raman spectra. The background free carrier concentration is lower than 3×1016 cm−3. The phonon lifetime of the Raman E2(2) mode of the sputtered GaN was comparable to that of bulk single crystal GaN grown by sublimation. The quality of the film was uniform across the wafer. The film was thermally stable upon annealing in N2 ambient. The x-ray and Raman analyses revealed that the sputtered GaN films are of high crystalline quality.}, number={10}, journal={APPLIED PHYSICS LETTERS}, author={Park, M and Maria, JP and Cuomo, JJ and Chang, YC and Muth, JF and Kolbas, RM and Nemanich, RJ and Carlson, E and Bumgarner, J}, year={2002}, month={Sep}, pages={1797–1799} }
 @article{liu_chiu_morton_kang_zhirnov_hren_cuomo_2001, title={Band gap structure and electron emission property of chemical-vapor-deposited diamond films}, volume={45}, ISSN={["0038-1101"]}, DOI={10.1016/S0038-1101(00)00210-0}, abstractNote={The structures of the band gap and defect states of chemical-vapor-deposited diamond films were investigated by photoluminescence spectroscopy, covering wavelength from visible to vacuum ultraviolet (VUV). Band gaps ranging from 5.5 to 3.2 eV were measured for natural, polycrystalline, and amorphous diamond films. Low voltage field emissions were obtained from wide band gap films with band gap states distributed close to the conduction band and extended deeply into the band gap. Amorphous diamond film with a narrower band gap could not provide low field emission.}, number={6}, journal={SOLID-STATE ELECTRONICS}, author={Liu, JJ and Chiu, DYT and Morton, DC and Kang, DH and Zhirnov, VV and Hren, JJ and Cuomo, JJ}, year={2001}, month={Jun}, pages={915–919} }
 @article{kang_zhirnov_sanwald_hren_cuomo_2001, title={Field emission from ultrathin coatings of AlN on Mo emitters}, volume={19}, ISSN={["2166-2746"]}, DOI={10.1116/1.1340669}, abstractNote={Experiments characterizing both the physics of emission and the performance of Mo tips coated with ultrathin film of AlN were conducted. Ultrathin films of AlN with thicknesses ranging from 7 to 21 nm in 1.5 nm increments were deposited onto Mo tips by magnetron sputtering. In situ field emission measurements were performed after each deposition step. Tip radius, thickness, and morphology of AlN coating were characterized with the transmission electron microscopy. The effect of the thickness of AlN on emission was determined using a Fowler–Nordheim analysis. Various surface treatment effects were studied and measurements of maximum current and emission stability were performed, e.g., maximum current from a single Mo tip with 15 nm of AlN coating was 52 μA.}, number={1}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B}, author={Kang, D and Zhirnov, VV and Sanwald, RC and Hren, JJ and Cuomo, JJ}, year={2001}, pages={50–54} }
 @article{hyun_aspnes_cuomo_2001, title={Nondestructive measurement of a glass transition temperature at spin-cast semicrystalline polymer surfaces}, volume={34}, ISSN={["0024-9297"]}, DOI={10.1021/ma0012797}, abstractNote={ADVERTISEMENT RETURN TO ISSUECommunication to the...Communication to the EditorNEXTNondestructive Measurement of a Glass Transition Temperature at Spin-Cast Semicrystalline Polymer SurfacesJ. Hyun, D. E. Aspnes, and J. J. CuomoView Author Information Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7907 Cite this: Macromolecules 2001, 34, 8, 2395–2397Publication Date (Web):March 9, 2001Publication History Received21 July 2000Revised1 November 2000Published online9 March 2001Published inissue 1 April 2001https://doi.org/10.1021/ma0012797Copyright © 2001 American Chemical SocietyRequest reuse permissions Article Views208Altmetric-Citations18LEARN ABOUT THESE METRICSArticle Views are the COUNTER-compliant sum of full text article downloads since November 2008 (both PDF and HTML) across all institutions and individuals. These metrics are regularly updated to reflect usage leading up to the last few days.Citations are the number of other articles citing this article, calculated by Crossref and updated daily. Find more information about Crossref citation counts.The Altmetric Attention Score is a quantitative measure of the attention that a research article has received online. Clicking on the donut icon will load a page at altmetric.com with additional details about the score and the social media presence for the given article. Find more information on the Altmetric Attention Score and how the score is calculated. Share Add toView InAdd Full Text with ReferenceAdd Description ExportRISCitationCitation and abstractCitation and referencesMore Options Share onFacebookTwitterWechatLinked InReddit Read OnlinePDF (97 KB) Get e-AlertscloseSUBJECTS:Glass transition,Optical properties,Plasma,Polymers,Positron emission tomography Get e-Alerts}, number={8}, journal={MACROMOLECULES}, author={Hyun, J and Aspnes, DE and Cuomo, JJ}, year={2001}, month={Apr}, pages={2395–2397} }
 @article{park_teng_sakhrani_mclaurin_kolbas_sanwald_nemanich_hren_cuomo_2001, title={Optical characterization of wide band gap amorphous semiconductors (a-Si : C : H): Effect of hydrogen dilution}, volume={89}, ISSN={["1089-7550"]}, DOI={10.1063/1.1332421}, abstractNote={The effect of hydrogen dilution on the optical properties of a wide band gap amorphous semiconductor (a-Si:C:H) was investigated. The samples were prepared by glow discharge decomposition of tetramethylsilane and were characterized primarily by optical techniques: spectroscopic ellipsometry, Raman scattering, infrared absorption, spectrophotometry, and UV photoluminescence. The deposition rate decreased with hydrogen dilution, while the silicon to carbon ratio remained constant with the addition of hydrogen. The optical band gap of this material increased as the hydrogen flow rate increased. Infrared absorption studies show that the concentration of hydrogen which is bonded to carbon decreases systematically upon hydrogen dilution. Hydrogen dilution appears to reduce the size and concentration of sp2 bonded carbon clusters, possibly caused by the etching of sp2 clusters by atomic hydrogen. The result was also supported by the shift of the Raman G peak position to a lower wave number region. Room temperature photoluminescence in the visible spectrum was observed with UV excitation.}, number={2}, journal={JOURNAL OF APPLIED PHYSICS}, author={Park, M and Teng, CW and Sakhrani, V and McLaurin, MB and Kolbas, RM and Sanwald, RC and Nemanich, RJ and Hren, JJ and Cuomo, JJ}, year={2001}, month={Jan}, pages={1130–1137} }
 @article{zhirnov_lizzul-rinne_wojak_sanwald_cuomo_hren_2001, title={Optimizing high-current yields from diamond coated field emitters}, volume={19}, ISSN={["1071-1023"]}, DOI={10.1116/1.1340009}, abstractNote={The data for the maximum emission currents from needle-shaped emitters with differing diamond coatings were empirically analyzed. The coatings studied were chemical vapor deposition diamond, natural diamond, and nanodiamond. Two parameters were chosen to characterize the emissive properties: (1) the dependence of the maximum current (Imax) on the coating thickness (D), i.e., I(D)=ΔImax/ΔD, and (2) the dependence of the threshold voltage Vth on [(D);ΔVth/ΔD]. The dependence of Imax(D) and Imax/Vmax(D) were determined from the experimental data for the three different diamond coatings. The maximum current Imax is very different for these three different coatings and is also a function of the coating thickness, D. Both the maximum current and the transconductance of field emission tips can be increased significantly by diamond coatings. A strong, nearly linear, dependence of Imax on diamond thickness was found. An empirical estimate of the thermal conductivity of nanodiamond, based on the field emission data, gave 2.71 W/cm K. The maximum current output from multitip arrays was also analyzed and an optimization procedure was devised that suggested a route to “engineered coatings.”}, number={1}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B}, author={Zhirnov, VV and Lizzul-Rinne, C and Wojak, GJ and Sanwald, RC and Cuomo, JJ and Hren, JJ}, year={2001}, pages={17–22} }
 @article{hyun_barletta_koh_yoo_oh_aspnes_cuomo_2000, title={Effect of Ar+ ion beam in the process of plasma surface modification of PET films}, volume={77}, ISSN={["0021-8995"]}, DOI={10.1002/1097-4628(20000822)77:8<1679::AID-APP4>3.0.CO;2-F}, abstractNote={In general, plasma modified polymer surfaces tend to show short aging time and rapid hydrophobic recovery after treatment. To prevent reorientation from the surface to the bulk, appropriate crosslinking is necessary among the polymer chains. In this work, an Ar+ ion beam was used to provide crosslinking to the surface. Crosslinking was shown by spectroscopic ellipsometry, AFM, and FTIR. Contact angle measurements were performed to see the aging of the modified surfaces. The surface modified with Ar+ ion beam followed by RF plasma treatment exhibited reduced chain mobility and a highly stable hydrophilic surface. © 2000 John Wiley & Sons, Inc. J Appl Polym Sci 77: 1679–1683, 2000}, number={8}, journal={JOURNAL OF APPLIED POLYMER SCIENCE}, author={Hyun, J and Barletta, P and Koh, K and Yoo, S and Oh, J and Aspnes, DE and Cuomo, JJ}, year={2000}, month={Aug}, pages={1679–1683} }
 @article{hyun_pope_smith_park_cuomo_2000, title={Ultrathin DLC and SiOx layer deposition on poly(ethylene terephthalate) and restriction of surface dynamics}, volume={75}, DOI={10.1002/(SICI)1097-4628(20000228)75:9<1158::AID-APP9>3.3.CO;2-C}, abstractNote={The hydrophilicity of oxygen plasma-reated polymer surfaces decays with storing time in air environments. Because they are dense, highly crosslinked, and chemically stable, diamond-like carbon (DLC) films and silicon oxide films (SiOx) were deposited on poly(ethylene terephthalate) by plasma-enhanced chemical vapor deposition to restrict polymer surface dynamics. In this study, the effects of ultrathin films on surface dynamics of these polymers were investigated. The layers were deposited on substrates with thickness below 100 Å. The thickness of films was measured with a scanning analyzer ellipsometer, while ATR-IR spectroscopy and Raman spectroscopy were performed to observe the chemical structure of the films. Films below 50 Å were also shown to be effective in stabilizing the plasma treated polymer surfaces. © 2000 John Wiley & Sons, Inc. J Appl Polym Sci 75: 1158–1164, 2000}, number={9}, journal={Journal of Applied Polymer Science}, author={Hyun, J. and Pope, M. and Smith, J. and Park, M. and Cuomo, J. J.}, year={2000}, pages={1158–1164} }
 @article{park_sowers_rinne_schlesser_bergman_nemanich_sitar_hren_cuomo_zhirnov_et al._1999, title={Effect of nitrogen incorporation on electron emission from chemical vapor deposited diamond}, volume={17}, ISSN={["2166-2746"]}, DOI={10.1116/1.590630}, abstractNote={Two different types of the nitrogen-doped chemical vapor deposited (CVD) diamond films were synthesized with N2 (nitrogen) and C3H6N6 (melamine) as doping sources. The samples were analyzed by scanning electron microscopy, Raman scattering, photoluminescence spectroscopy, and field-emission measurements. More effective substitutional nitrogen doping was achieved with C3H6N6 than with N2. The diamond film doped with N2 contained a significant amount of nondiamond carbon phases. The sample produced with N2 exhibited a lower field emission turn-on field than the sample produced with C3H6N6. It is believed that the presence of the graphitic phases (or amorphous sp2 carbon) at the grain boundaries of the diamond and/or the nanocrystallinity (or microcrystallinity) of the diamond play a significant role in lowering the turn-on field of the film produced using N2. It is speculated that substitutional nitrogen doping plays only a minor role in changing the field emission characteristics of CVD diamond films.}, number={2}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B}, author={Park, M and Sowers, AT and Rinne, CL and Schlesser, R and Bergman, L and Nemanich, RJ and Sitar, Z and Hren, JJ and Cuomo, JJ and Zhirnov, VV and et al.}, year={1999}, pages={734–739} }
 @article{kang_zhirnov_wojak_preble_choi_hren_cuomo_1999, title={Investigation of thickness effects on AlN coated metal tips by in situ I-V measurement}, volume={17}, ISSN={["1071-1023"]}, DOI={10.1116/1.590608}, abstractNote={The effects of the aluminum nitride coating thickness on molybdenum emitter tips were investigated by an in situ I–V measurement technique inside a typical magnetron sputtering system. AlN was deposited on Mo tips using a dc-modulated 1 kW power source at 200 °C. Each I/V measurement was carried out immediately following a 15 s AlN deposition. Significantly improved field emission was observed as well as a strong emission thickness dependence, which we attribute to the influence of space charge.}, number={2}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B}, author={Kang, DH and Zhirnov, VV and Wojak, GJ and Preble, EA and Choi, WB and Hren, JJ and Cuomo, JJ}, year={1999}, pages={632–634} }
 @article{park_mcgregor_bergman_nemanich_hren_cuomo_choi_zhirnov_1999, title={Raman analysis and field emission study of ion beam etched diamond films}, volume={17}, ISSN={["2166-2746"]}, DOI={10.1116/1.590622}, abstractNote={Discontinuous diamond films were deposited on silicon using a microwave plasma chemical vapor deposition system. The diamond deposits were sharpened by argon ion beam etching. Raman spectroscopy was carried out to study the structural change of the diamond after ion beam bombardment. It was found that amorphous sp2 carbon is produced as diamond is being sputtered by the Ar ion beam. The field emission turn-on field was also drastically lowered after sharpening, which, it is speculated, is caused by field enhancement due to change in geometry and/or structural changes (such as amorphization of crystalline diamond into graphitic or amorphous sp2 carbon) by Ar ion irradiation.}, number={2}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B}, author={Park, M and McGregor, DR and Bergman, L and Nemanich, RJ and Hren, JJ and Cuomo, JJ and Choi, WB and Zhirnov, VV}, year={1999}, pages={700–704} }
 @article{park_camphausen_myers_barletta_sakhrani_bergman_nemanich_cuomo_1999, title={Raman scattering of tetrahedrally-bonded amorphous carbon deposited at oblique angles}, volume={41}, ISSN={["1873-4979"]}, DOI={10.1016/S0167-577X(99)00135-4}, abstractNote={Amorphous carbon (txa-C1−x) films were prepared by filtered cathodic arc deposition (FCAD). The films were deposited on p-type Si (111). The angle of beam incidence was varied from 0° to 75° with respect to the substrate normal. Micro-Raman spectroscopy, electron energy loss spectroscopy (EELS), and transmission electron microscopy (TEM) were carried out for sample analysis. It was found that the position of the G peak shifts to a higher wave number region as the angle of incidence increases. This means that the sp2/sp3 ratio increases with increasing angle. This conclusion is supported by EELS. The film deposited at an angle of 75° exhibits a columnar structure with alternating high and low carbon density regions.}, number={5}, journal={MATERIALS LETTERS}, author={Park, M and Camphausen, SM and Myers, AF and Barletta, PT and Sakhrani, V and Bergman, L and Nemanich, RJ and Cuomo, JJ}, year={1999}, month={Dec}, pages={229–233} }
 @article{choi_schlesser_wojak_cuomo_sitar_hren_1998, title={Electron energy distribution of diamond-coated field emitters}, volume={16}, number={2}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Choi, W. B. and Schlesser, R. and Wojak, G. and Cuomo, J. J. and Sitar, Z. and Hren, J. J.}, year={1998}, month={Mar}, pages={716–719} }
 @article{zhirnov_liu_wojak_cuomo_hren_1998, title={Environmental effect on the electron emission from diamond surfaces}, volume={16}, number={3}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Zhirnov, V. V. and Liu, J. and Wojak, G. J. and Cuomo, J. J. and Hren, J. J.}, year={1998}, month={May}, pages={1188–1193} }
 @article{joshkin_parker_bedair_krasnobaev_cuomo_davis_suvkhanov_1998, title={Fine structure of near-band-edge photoluminescence in He+-irradiated GaN grown on SiC}, volume={72}, ISSN={["0003-6951"]}, DOI={10.1063/1.121474}, abstractNote={The effect of He ion implantation on the optical properties of epitaxial GaN-on-SiC was studied. We observed that He+ irradiation increases the relative intensity of the “blue emission” and resistivity of GaN films and decreases the intensity of the near-band-edge photoluminescence. Because the intensity of the main peak is drastically decreased, the fine structure of the near-band-edge photoluminescence in GaN after He+ irradiation was observed. From a comparison of observed sharp lines with photoluminescence peaks of GaN doped with oxygen, we conclude that oxygen can produce a complex, which is characterized by a strong localization of free carriers and a large lattice distortion. The zero-phonon line of this defect has energy close to the band-gap energy of GaN.}, number={22}, journal={APPLIED PHYSICS LETTERS}, author={Joshkin, VA and Parker, CA and Bedair, SM and Krasnobaev, LY and Cuomo, JJ and Davis, RF and Suvkhanov, A}, year={1998}, month={Jun}, pages={2838–2840} }
 @article{park_choi_streiffer_hren_cuomo_1998, title={Secondary electron emission patterning of diamond with hydrogen and oxygen plasmas}, volume={72}, ISSN={["0003-6951"]}, DOI={10.1063/1.121424}, abstractNote={Secondary electron emission patterning of single crystal diamond surfaces with hydrogen and oxygen plasma treatments was demonstrated. Hydrogen plasma treated regions were much brighter than the oxygen terminated regions. Results of atomic force microscopy confirmed that the observed contrast is not topographical. Several other possible negative electron affinity (or low positive electron affinity) materials such as chemical vapor deposited (CVD) diamond, aluminum nitride, and tetrahedrally bonded amorphous carbon (txa−C1−x) were also investigated. Faint image contrast (patterning) was also observed from polycrystalline CVD diamond and polycrystalline aluminum nitride films; however, no contrast at all was obtained from tetrahedrally bonded amorphous carbon (txa−C1−x) films.}, number={20}, journal={APPLIED PHYSICS LETTERS}, author={Park, M and Choi, WB and Streiffer, SK and Hren, JJ and Cuomo, JJ}, year={1998}, month={May}, pages={2580–2582} }
 @article{bozeman_camphausen_cuomo_kim_ahn_ko_1997, title={Electron field emission from amorphous carbon-cesium alloys}, volume={15}, ISSN={["1520-8559"]}, DOI={10.1116/1.580928}, abstractNote={Hard carbon films can be prepared by the condensation of energetic carbon species at and below room temperature. These hydrogen-free films are primarily tetrahedrally coordinated and contain high fractions of sp3 bonding. Field emission from these and other forms of carbon has been considered previously, but it was generally unstable or based on surface treatments that limit their operating conditions. We report electron emission from amorphous carbon-cesium (a-C:Cs) thin films at applied fields as low as 7 V/μm. This emission characteristic is relatively insensitive to surface treatment; films left under ambient laboratory environment for more than six months show these favorable characteristics with no pretreatment. We describe the fabrication process and emission properties of these films.}, number={3}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A}, author={Bozeman, SP and Camphausen, SM and Cuomo, JJ and Kim, SI and Ahn, YO and Ko, Y}, year={1997}, pages={1729–1732} }
 @article{ding_choi_myers_sharma_narayan_cuomo_hren_1997, title={Field emission enhancement from Mo tip emitters coated with N containing amorphous diamond films}, volume={94}, number={1-3}, journal={Surface & Coatings Technology}, author={Ding, M. Q. and Choi, W. B. and Myers, A. F. and Sharma, A. K. and Narayan, J. and Cuomo, J. J. and Hren, J. J.}, year={1997}, pages={672–675} }
 @article{ding_myers_choi_vispute_camphausen_narayan_cuomo_hren_bruley_1997, title={Field emission from amorphous diamond coated Mo tip emitters by pulsed laser deposition}, volume={15}, number={4}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Ding, M. Q. and Myers, A. F. and Choi, W. B. and Vispute, R. D. and Camphausen, S. M. and Narayan, J. and Cuomo, J. J. and Hren, J. J. and Bruley, J.}, year={1997}, pages={840–844} }
 @article{krasnobaev_cuomo_vyletalina_1997, title={Harnessing reverse annealing phenomenon for shallow p-n junction formation}, volume={82}, ISSN={["0021-8979"]}, DOI={10.1063/1.366323}, abstractNote={Monocrystalline silicon was implanted with 60 keV fluorine and 20 keV boron ions and annealed. Carrier profile, fluorine and boron redistribution, and the parameters of p+-n junctions were investigated. In ion implanted Si two specific regions were observed in which peculiarities in carrier concentration, resistivity, and F atoms redistribution occurred. It was reasoned that the “under-surface” specific region is enriched with vacancy-type defects while the “amorphous/crystalline (a/c) interface” region is enriched with interstitial type defects. After annealing at a temperature corresponding to the reverse annealing phenomenon, boron atoms were activated in the “under-surface” and deactivated in the “a/c interface” region. The possibility of PMOS transistor fabrication with ultrashallow p+-n junction (60 nm) and low leakage current by F++B+ implantation and low temperature (600–700) °C annealing by using this phenomenon was demonstrated.}, number={10}, journal={JOURNAL OF APPLIED PHYSICS}, author={Krasnobaev, LY and Cuomo, JJ and Vyletalina, OI}, year={1997}, month={Nov}, pages={5185–5190} }
 @article{rajan_roy_trogolo_cuomo_1997, title={Low energy ion beam assisted grain size evolution in thin film deposition}, volume={26}, ISSN={["0361-5235"]}, DOI={10.1007/s11664-997-0068-x}, number={11}, journal={JOURNAL OF ELECTRONIC MATERIALS}, author={Rajan, K and Roy, R and Trogolo, J and Cuomo, JJ}, year={1997}, month={Nov}, pages={1270–1273} }
 @article{zhirnov_wojak_choi_cuomo_hren_1997, title={Wide band gap materials for field emission devices}, volume={15}, ISSN={["1520-8559"]}, DOI={10.1116/1.580929}, abstractNote={An analysis of wide band gap materials from the point of view of their application in cold emission devices is presented, and criteria of material choice for device application are discussed. Not only material but also technological parameters are taken into consideration. Among the material parameters, the following were found to be the most important; electron affinity, dielectric constant, thermal conductivity, melting point, chemical and physical robustness. The major technological parameter is compatibility of the material deposition process with commercially available facilities and other steps of cathode fabrication. It was shown that wide band gap materials are most effective for emission if deposited on sharp conductive tips. Experimental results from diamond, AlN, c-BN, and SiO2 field emitters are presented and some possible mechanisms explaining their I–V characteristics are discussed.}, number={3}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A}, author={Zhirnov, VV and Wojak, GJ and Choi, WB and Cuomo, JJ and Hren, JJ}, year={1997}, pages={1733–1738} }
 @misc{aboaf_cuomo_gangulee_kobliska, title={Amorphous magnetic thin films with highly stable easy axis}, volume={4,236,946}, number={1980 Dec. 2}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Aboaf, J. A. and Cuomo, J. J. and Gangulee, A. and Kobliska, R. J.} }
 @misc{cuomo_kim, title={Amorphous matrices having dispersed cesium}, volume={5,852,303}, number={1998 Dec. 22}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Cuomo, J. J. and Kim, S. I.} }
 @misc{cuomo_gangulee_kobliska, title={Amorphous metallic and nitrogen containing alloy films}, volume={4,231,816}, number={1980 Nov. 4}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Cuomo, J. J. and Gangulee, A. and Kobliska, J.} }
 @misc{cuomo_kaufman, title={Apparatus and method for generating high current negative ions}, volume={4,471,224}, number={1984 Sep. 11}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Cuomo, J. J. and Kaufman, H. R.} }
 @misc{cuomo_guarnieri_hopwood, title={Apparatus for enhanced inductive coupling to plasmas with reduced sputter contamination}, volume={5,433,812}, number={1995 Jul. 18}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Cuomo, J. J. and Guarnieri, C. R. and Hopwood, J. A.} }
 @misc{cuomo_yehoda, title={Apparatus for polishing a diamond or carbon nitride film by reaction with oxygen transported to the film through a superionic conductor in contact with the film}, volume={5,468,326}, number={1995 Nov. 21}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Cuomo, J. J. and Yehoda, J. E.} }
 @misc{chaudhari_cuomo_gambino, title={Apparatus using amorphous magnetic compositions}, volume={3,965,463}, number={1976 Jun. 22}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Chaudhari, P. and Cuomo, J. J. and Gambino, R. J.} }
 @misc{chaudhari_cuomo_gambino_mcguire, title={Beam addressable film using amorphous magnetic material}, volume={3,949,387}, number={1976 Apr. 6}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Chaudhari, P. and Cuomo, J. J. and Gambino, R. J. and McGuire, T. R.} }
 @misc{cuomo_harper_kaufman, title={Compact plug connectable ion source}, volume={4,446,403}, number={1984 May 1}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Cuomo, J. J. and Harper, J. M. and Kaufman, H. R.} }
 @misc{cuomo_leary_yee, title={Copper texturing process}, volume={4,416,725}, number={1983 Nov. 22}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Cuomo, J. J. and Leary, P. A. and Yee, D. S.} }
 @misc{cuomo_guarnieri_hoenig_seki_speidell_whitehair, title={Durable optical elements fabricated from free standing polycrystalline diamond and non-hydrogenated amorphous diamond like carbon (DLC) thin films}, volume={5,225,926}, number={1993 Jul. 6}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Cuomo, J. J. and Guarnieri, C. R. and Hoenig, B. A. and Seki, H. and Speidell, J. L. and Whitehair, S. J.} }
 @misc{cuomo_dreyfus_woodall, title={Electron source}, volume={4,352,117}, number={1982 Sep. 28}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Cuomo, J. J. and Dreyfus, R. W. and Woodall, J. M.} }
 @misc{cuomo_landon_wang, title={Electrostatic clutch}, volume={4,393,967}, number={1983 Jul. 19}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Cuomo, J. J. and Landon, A. J. and Wang, H. C.} }
 @misc{cuomo_gambino_harper_kuptis, title={Energetic particle beam deposition system}, volume={4,250,009}, number={1981 Feb. 10}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Cuomo, J. J. and Gambino, R. J. and Harper, J. M. and Kuptis, J. D.} }
 @misc{cuomo_gambino_harper, title={Etching by sputtering from an intermetallic target to form negative metallic ions which produce etching of a juxtaposed substrate}, volume={4,132,614}, number={1979 Jan. 2}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Cuomo, J. J. and Gambino, R. J. and Harper, J. M.} }
 @misc{cali_cuomo_mikalsen_rutledge_selker, title={Force sensitive transducer for use in a computer keyboard}, volume={5,489,900}, number={1996 Feb. 6}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Cali, M. F. and Cuomo, J. J. and Mikalsen, D. J. and Rutledge, J. D. and Selker, E. J.} }
 @misc{cuomo_distefano_rosenberg, title={Growth of polycrystalline semiconductor film with intermetallic nucleating layer}, volume={4,132,571}, number={1979 Jan. 2}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Cuomo, J. J. and DiStefano, T. H. and Rosenberg, R.} }
 @misc{cuomo_kaufman, title={Hall ion generator for working surfaces with a low energy high intensity ion beam}, volume={4,541,890}, number={1985 Sep. 17}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Cuomo, J. J. and Kaufman, H. R.} }
 @misc{chandrashekhar_chaudhari_cuomo_gambino_harper, title={High intensity ion source using ionic conductors}, volume={4,264,813}, number={1981 Apr. 28}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Chandrashekhar, G. V. and Chaudhari, P. and Cuomo, J. J. and Gambino, R. J. and Harper, J. M.} }
 @misc{cuomo_kaufman_rossnagel, title={Hollow cathode}, volume={4,633,129}, number={1986 Dec. 30}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Cuomo, J. J. and Kaufman, H. R. and Rossnagel, S. M.} }
 @misc{cuomo_kafuman_rossnagel, title={Hollow cathode enhanced magnetron sputter device}, volume={4,588,490}, number={1986 May 13}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Cuomo, J. J. and Kafuman, H. R. and Rossnagel, S. M.} }
 @misc{bumble_cuomo_logan_rossnagel, title={Hollow cathode enhanced plasma for high rate reactive ion etching and deposition}, volume={4,637,853}, number={1987 Jan. 20}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Bumble, B. and Cuomo, J. J. and Logan, J. S. and Rossnagel, S. M.} }
 @misc{cuomo_dibble_levine, title={Low contact electrical resistant composition, substrates coated therewith, and process for preparing such}, volume={4,774,151}, number={1988 Sep. 27}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Cuomo, J. J. and Dibble, E. P. and Levine, S. L.} }
 @misc{cuomo_harper, title={Low energy ion beam oxidation process}, volume={4,351,712}, number={1982 Sep. 28}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Cuomo, J. J. and Harper, J. M.} }
 @misc{cuomo_grazioso_guarnieri_haller_heidenreich_selwyn_whitehair, title={Method and apparatus for contamination control in processing apparatus containing voltage driven electrode}, volume={5,298,720}, number={1994 Mar. 29}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Cuomo, J. J. and Grazioso, M. V. and Guarnieri, C. R. and Haller, K. L. and Heidenreich, J. E. and Selwyn, G. S. and Whitehair, S. J.} }
 @misc{cuomo_williams_hanser_carlson_thomas, title={Method and apparatus for producing MIIIN columns and MIIIN materials grown thereon}, volume={6,692,568}, number={2004 Feb. 17}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Cuomo, J. J. and Williams, N. M. and Hanser, A. D. and Carlson, E. P. and Thomas, D. T.} }
 @misc{cuomo_guarnieri_hopwood, title={Method for enhanced inductive coupling to plasmas with reduced sputter contamination}, volume={5,622,635}, number={1997 Apr. 22}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Cuomo, J. J. and Guarnieri, C. R. and Hopwood, J. A.} }
 @misc{cuomo_yehoda, title={Method for polishing a diamond or carbon nitride film by reaction with oxygen transported to the film through a superionic conductor in contact with the film}, volume={5,795,653}, number={1998 Aug. 18}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Cuomo, J. J. and Yehoda, J. E.} }
 @misc{chaudhari_cuomo_matthews, title={Method for preparing large single crystal thin films}, volume={4,046,618}, number={1977 Sep. 6}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Chaudhari, P. and Cuomo, J. J. and Matthews, J. W.} }
 @misc{bindra_cuomo_gall_ingraham_kang_kim_lauro_light_markovich_miersch_et al., title={Method of fabricating nendritic materials}, volume={5,185,073}, number={1993 Feb. 9}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Bindra, P. S. and Cuomo, J. J. and Gall, T. P. and Ingraham, A. P. and Kang, S. K. and Kim, J. and Lauro, P. and Light, D. N. and Markovich, V. R. and Miersch, E. F. and et al.} }
 @misc{cuomo_guarnieri_machlin_roy_yee, title={Method of preparing oriented, polycrystalline superconducting ceramic oxides}, volume={5,206,213}, number={1993 Apr. 27}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Cuomo, J. J. and Guarnieri, C. R. and Machlin, E. S. and Roy, R. A. and Yee, D. S.} }
 @misc{cuomo_gelmore_hatzakis_lewis_shaw_whitehair, title={Microwave processing}, volume={5,241,040}, number={1993 Aug. 31}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Cuomo, J. J. and Gelmore, J. D. and Hatzakis, M. and Lewis, D. A. and Shaw, J. M. and Whitehair, S. J.} }
 @misc{cuomo_gelorme_hatzakis_lewis_shaw_whitehair, title={Microwave processing}, volume={5,340,914}, number={1994 Aug. 23}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Cuomo, J. J. and Gelorme, J. D. and Hatzakis, M. and Lewis, D. A. and Shaw, J. M. and Whitehair, S. J.} }
 @misc{cuomo, title={Negative ion beam selective etching process}, volume={4,414,069}, number={1983 Nov. 8}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Cuomo, J. J.} }
 @misc{cuomo_guarnieri, title={Photoelectric enhanced plasma glow discharge system and method including radiation means}, volume={4,664,769}, number={1987 May 12}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Cuomo, J. J. and Guarnieri, C. R.} }
 @misc{cuomo_distefano_woodall, title={Photon energy conversion}, volume={4,448,487}, number={1984 May 15}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Cuomo, J. J. and DiStefano, T. H. and Woodall, J. M.} }
 @misc{cuomo_woodall_ziegler, title={Photon energy converter}, volume={4,005,698}, number={1977 Feb. 1}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Cuomo, J. J. and Woodall, J. M. and Ziegler, J. F.} }
 @misc{blum_bumble_chan_conde_cuomo_kane, title={Plasma enhanced chemical vapor processing system using hollow cathode effect}, volume={5,133,986}, number={1992 Jul. 28}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Blum, J. M. and Bumble, B. and Chan, K. K. and Conde, J. R. and Cuomo, J. J. and Kane, W. F.} }
 @misc{brezoczky_cuomo_guarnieri_ramanathan_shivashankar_smith_yee, title={Process for fabricating high density disc storage device}, volume={4,925,700}, number={1990 May 15}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Brezoczky, B. and Cuomo, J. J. and Guarnieri, C. R. and Ramanathan, K. V. and Shivashankar, S. A. and Smith, D. A. and Yee, D. S.} }
 @misc{cuomo_dibble_levine, title={Process for preparing low electrical contact resistance composition}, volume={4,849,079}, number={1989 Jul. 18}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Cuomo, J. J. and Dibble, E. P. and Levine, S. L.} }
 @misc{cuomo_leary_woodall, title={Process for producing aluminum alkoxide or aluminum aryloxide}, volume={4,745,204}, number={1988 May 17}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Cuomo, J. J. and Leary, P. A. and Woodall, J. M.} }
 @misc{cuomo_distefano_rosenberg, title={Process of making a radiation responsive device}, volume={4,155,785}, number={1979 May 22}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Cuomo, J. J. and DiStefano, T. H. and Rosenberg, R.} }
 @misc{cuomo_harper_kafuman_speidell, title={Programmable ion beam patterning system}, volume={4,523,971}, number={1985 Jun. 18}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Cuomo, J. J. and Harper, J. M. and Kafuman, H. R. and Speidell, J. L.} }
 @misc{cuomo_distefano_rosenberg, title={Radiation responsive device}, volume={4,062,038}, number={1977 Dec. 6}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Cuomo, J. J. and DiStefano, T. H. and Rosenberg, R.} }
 @misc{cuomo_guarnieri_hopwood_whitehair, title={Radio frequency induction plasma processing system utilizing a uniform field coil}, volume={5,280,154}, number={1994 Jan. 18}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Cuomo, J. J. and Guarnieri, C. R. and Hopwood, J. A. and Whitehair, S. J.} }
 @misc{joshi_cuomo_dalal_hsu, title={Refractory metal capped low resistivity metal conductor lines and vias}, volume={6,147,402}, number={2000 Nov. 14}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Joshi, R. V. and Cuomo, J. J. and Dalal, H. M. and Hsu, L. L.} }
 @misc{joshi_cuomo_dalal_hsu, title={Refractory metal capped low resistivity metal conductor lines and vias}, volume={5,976,975}, number={1999 Nov. 2}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Joshi, R. V. and Cuomo, J. J. and Dalal, H. M. and Hsu, L. L.} }
 @misc{joshi_cuomo_dalal_hsu, title={Refractory metal capped low resistivity metal conductor lines and vias}, volume={5,889,328}, number={1999 Mar. 30}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Joshi, R. V. and Cuomo, J. J. and Dalal, H. M. and Hsu, L. L.} }
 @misc{joshi_cuomo_dalal_hsu, title={Refractory metal capped low resistivity metal conductor lines and vias}, volume={5,585,673}, number={1996 Dec. 17}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Joshi, R. V. and Cuomo, J. J. and Dalal, H. M. and Hsu, L. L.} }
 @misc{joshi_cuomo_dalal_hsu, title={Refractory metal capped low resistivity metal conductor lines and vias}, volume={5,300,813}, number={1994 Apr. 5}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Joshi, R. V. and Cuomo, J. J. and Dalal, H. M. and Hsu, L. L.} }
 @misc{joshi_cuomo_dalal_hsu, title={Refractory metal capped low resistivity metal conductor lines and vias}, volume={5,426,330}, number={1995 Jun. 20}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Joshi, R. V. and Cuomo, J. J. and Dalal, H. M. and Hsu, L. L.} }
 @misc{joshi_cuomo_dalal_hsu, title={Refractory metal capped low resistivity metal conductor lines and vias formed using PVD and CVD}, volume={6,323,554}, number={2001 Nov. 27}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Joshi, R. V. and Cuomo, J. J. and Dalal, H. M. and Hsu, L. L.} }
 @misc{joshi_cuomo_dalal_hsu, title={Refractory metal capped low resistivity metal conductor lines and vias formed using PVD and CVD}, volume={5,403,779}, number={1995 Apr. 4}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Joshi, R. V. and Cuomo, J. J. and Dalal, H. M. and Hsu, L. L.} }
 @misc{berry_cuomo_guarnieri_yee, title={Selective deposition process for physical vapor deposition}, volume={5,064,681}, number={1991 Nov. 12}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Berry, C. J. and Cuomo, J. J. and Guarnieri, C. R. and Yee, D. S.} }
 @misc{bindra_cuomo_gall_ingraham_kang_kim_lauro_light_markovich_miersch_et al., title={Separable electrical connection technology}, volume={5,137,461}, number={1992 Aug. 11}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Bindra, P. S. and Cuomo, J. J. and Gall, T. P. and Ingraham, A. P. and Kang, S. K. and Kim, J. and Lauro, P. and Light, D. N. and Markovich, V. R. and Miersch, E. F. and et al.} }
 @misc{cuomo_harper_waters, title={Single grid focussed ion beam source}, volume={4,538,067}, number={1985 Aug. 27}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Cuomo, J. J. and Harper, J. M. and Waters, G. A.} }
 @misc{cuomo_yehoda, title={Solid state ionic polishing of diamond}, volume={5,403,619}, number={1995 Apr. 4}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Cuomo, J. J. and Yehoda, J. E.} }
 @misc{cuomo_guarnieri_whitehair, title={Solid state microwave powered material and plasma processing systems}, volume={5,179,264}, number={1993 Jan. 12}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Cuomo, J. J. and Guarnieri, C. R. and Whitehair, S.} }
 @misc{cuomo_woodall, title={Solid state renewable energy supply}, volume={4,358,291}, number={1982 Nov. 9}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Cuomo, J. J. and Woodall, J. M.} }
 @misc{clark_chaundhari_cuomo_frisch_speidell, title={Spherical retarding grid analyzer}, volume={4,714,831}, number={1987 Dec. 22}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Clark, G. J. and Chaundhari, P. and Cuomo, J. J. and Frisch, M. A. and Speidell, J. L.} }
 @misc{broers_cuomo_laibowitz_molzen, title={Sub 100A range line width pattern fabrication}, volume={4,197,332}, number={1980 Apr. 8}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Broers, A. N. and Cuomo, J. J. and Laibowitz, R. B. and Molzen, W. W.} }
 @misc{broers_cuomo_laibowitz_moltzen, title={Sub-100A range line width pattern fabrication}, volume={4,316,093}, number={1982 Feb. 16}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Broers, A. N. and Cuomo, J. J. and Laibowitz, R. B. and Moltzen, W. W.} }
 @article{kang_cuomo, title={Surface treatment effects on the electron emission characteristics of ultra thin AlN coated molybdenum tips}, volume={3}, number={3}, journal={Journal of Ceramic Processing Research}, author={Kang, D. and Cuomo, J. J.}, pages={228–230} }
 @misc{cuomo_harper, title={System and method for deflecting and focusing a broad ion beam}, volume={4,381,453}, number={1983 Apr. 26}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Cuomo, J. J. and Harper, J. M.} }
 @misc{cuomo_kerth_major, title={Ultrasonic micro machining slider air bearings with diamond faced patterned die}, volume={5,478,270}, number={1995 Dec. 26}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Cuomo, J. J. and Kerth, R. T. and Major, J. C.} }