Chang Zeng

Jin, Y., Zeng, C., Ma, L., & Barlage, D. (2007, March). Analytical threshold voltage model with TCAD simulation verification for design and evaluation of tri-gate MOSFETs. https://doi.org/10.1016/j.sse.2007.01.023

Saripalli, Y. N., Pei, L., Biggerstaff, T., Ramachandran, S., Duscher, G. J., Johnson, M. A. L., … Barlage, D. W. (2007). Transmission electron microscopy studies of regrown GaN Ohmic contacts on patterned substrates for metal oxide semiconductor field effect transistor applications. APPLIED PHYSICS LETTERS, 90(20). https://doi.org/10.1063/1.2741123

Wang, D., Park, M., Saripalli, Y. N., Johnson, M. A. L., Zeng, C., Barlage, D. W., & Long, J. P. (2006). Optical spectroscopic analysis of selected area epitaxially regrown n(+) gallium nitride. JOURNAL OF APPLIED PHYSICS, 99(12). https://doi.org/10.1063/1.2204755

Saripalli, Y. N., Zeng, C., Long, J. P., Barlage, D. W., Johnson, M. A. L., & Braddock, D. (2006, January 25). Properties of III-N MOS structures with low-temperature epitaxially regrown ohmic contacts. JOURNAL OF CRYSTAL GROWTH, Vol. 287, pp. 562–565. https://doi.org/10.1016/j.jcrysgro.2005.10.075