@article{park_han_hou_jones_oh_ahn_lee_lee_mhin_2020, title={Crystal structures and electrical properties of cobalt manganese spinel oxides}, volume={25}, ISBN={2352-4928}, DOI={10.1016/j.mtcomm.2020.101298}, abstractNote={Crystal structures and hopping motions of cobalt manganese spinel oxides across a wide composition range (CoxMn3−xO4 (CMO), 0.9 ≤ x ≤ 2.7) are investigated in order to clarify the corresponding mechanisms of electrical behaviors as negative temperature coefficient thermistors. Based on the diffraction measurements, a tetragonal to cubic spinel transition are observed mostly with increasing Co content. Hopping distance for a series of CMO are calculated by the variable range hopping mechanism, which is changed as a function of composition, resulting to the observed unique electrical properties. According to the electrical and structural analysis, the electrical properties of CMO compounds with different Co contents majorly determined by tetragonal to cubic phase transition, cation distribution, and hopping distance. In addition, the formation of secondary phase (i.e., CoO) and another CMO phase may also significantly affect the electrical properties.}, journal={MATERIALS TODAY COMMUNICATIONS}, author={Park, Kyoung Ryeol and Han, HyukSu and Hou, Dong and Jones, Jacob L. and Oh, Nuri and Ahn, Chisung and Lee, Jaewoong and Lee, Seung Hwan and Mhin, Sungwook}, year={2020}, month={Dec} }
 @article{johnson_fancher_hou_jones_2019, title={Structure of HfO2 modified with Y, Gd, and Zr at ambient conditions and high pressures}, volume={126}, ISSN={["1089-7550"]}, DOI={10.1063/1.5121024}, abstractNote={High-resolution and high-pressure X-ray diffraction measurements were performed to determine the effects of 5% Y, 3% Gd, and 50% Zr substitution on the crystal structure and polymorphism of HfO2. High-resolution experiments at ambient pressure show a mixture of monoclinic and cubic fluorite phases in 5% Y:HfO2 and 3% Gd:HfO2, while 50% Zr:HfO2 formed a monoclinic, single-phase solid solution. Crystallographic refinement using the Rietveld method indicates that Y and Gd substitute for Hf in both the monoclinic and cubic phases. High-pressure X-ray diffraction was performed in situ up to 31 GPa and shows that the pressure-induced phase transitions were reduced with the addition of either Y, Gd, or Zr relative to the transition pressures in undoped HfO2. The pressure-induced changes in lattice parameter, relative volume, and spontaneous strain are reported.}, number={20}, journal={JOURNAL OF APPLIED PHYSICS}, author={Johnson, Brienne and Fancher, Chris M. and Hou, Dong and Jones, Jacob L.}, year={2019}, month={Nov} }
 @article{manjon-sanz_culbertson_hou_jones_dolgos_2019, title={Total scattering and diffraction studies of lead-free piezoelectric (1-x) Ba(Zr0.2Ti0.8)O-3-x(Ba0.7Ca0.3)TiO3 deconvolute intrinsic and extrinsic contributions to electromechanical strain}, volume={171}, ISSN={["1873-2453"]}, DOI={10.1016/j.actamat.2019.04.005}, abstractNote={The piezoelectric material (1-x)Ba(Zr0.2Ti0.8)O3-x(Ba0.7Ca0.3)TiO3 (BZT-xBCT) has emerged as a leading lead-free candidate to replace Pb(Zr1-xTix)O3 (PZT) for certain applications. However, the structural response of BZT-xBCT to an electric field is not well understood, particularly how the local structure responds to varying electric fields. In this study, in situ synchrotron X-ray diffraction and total scattering measurements were performed on BZT-xBCT from x = 0.45 to 0.60. The lattice distortions were quantified from the unit cell parameters for the compositions in the orthorhombic (O) region (x = 0.45 to 0.50) and tetragonal (T) region (x = 0.51 to 0.60). It was found that the lattice distortion is minimized in compositions that exhibit the largest effective piezoelectric effect, particularly at the x = 0.45 composition (between the rhombohedral (R) and O regions) and at the morphotropic phase boundary (MPB) composition x = 0.50 (between O and T regions). The degree of domain wall motion was quantified, and the results indicate that as the MPB is approached, the degree of domain wall motion increases dramatically. The increase in domain wall motion also coincides with the minimization of the lattice distortion. The pair distribution functions (PDFs) were calculated from the Fourier transform of the total scattering data. Analysis of the PDF peak shifts with electric field shows nonlinear lattice strains across all compositions, which indicates a deviation from classical piezoelectric behavior. We conclude that the strong piezoelectric properties in the BZT-xBCT system are attributed to an increased degree of domain wall reorientation that is facilitated by a decreased lattice distortion.}, journal={ACTA MATERIALIA}, author={Manjon-Sanz, Alicia and Culbertson, Charles M. and Hou, Dong and Jones, Jacob L. and Dolgos, Michelle R.}, year={2019}, month={Jun}, pages={79–91} }
 @article{zhao_hou_chung_zhou_kynast_hennig_liu_li_jones_2018, title={Deconvolved intrinsic and extrinsic contributions to electrostrain in high performance, Nb-doped Pb(ZrxTi1-x)O-3 piezoceramics (0.50 <= x <= 0.56)}, volume={158}, ISSN={["1873-2453"]}, DOI={10.1016/j.actamat.2018.08.006}, abstractNote={Lead zirconate titanate (PZT) is the base compound for the highest performing piezoelectric compositions. When doped with Nb, PZT has superior electrostrain and piezoelectric properties. However, the origin of that electrostrain involves both intrinsic and extrinsic contributions which have been challenging to deconvolute. In the present work, we utilize high-energy, synchrotron X-ray diffraction (XRD) in combination with an area detector to measure the response of 1% Nb-doped PbZrxTi1-xO3 (PZT, 0.50 ≤ x ≤ 0.56) piezoceramics to electric fields. Using analysis involving micromechanics-based calculations and pair distribution functions (PDFs), it is found that both the intrinsic and extrinsic contributions are important for realization of high electrostrain. In the compositions nearest the morphotropic phase boundary (MPB), the relative contributions of the intrinsic response increase. The interdependence of crystal symmetry (tetragonal and rhombohedral), spontaneous strain, and the extent of non-180° domain switching are also elucidated. An orientation dependence in the field-induced lattice strain is observed and attributed to extrinsic effects, i.e., the intergranular interaction between domain switching and lattice strain. Finally, the PDFs suggest that a continuous rotation of the polarization vector occurs in the tetragonal phase samples due to piezoelectric distortion, being most obvious in the compositions near the MPB, but is not observed in the rhombohedral phase samples.}, journal={ACTA MATERIALIA}, author={Zhao, Changhao and Hou, Dong and Chung, Ching-Chang and Zhou, Hanhan and Kynast, Antje and Hennig, Eberhard and Liu, Wenfeng and Li, Shengtao and Jones, Jacob L.}, year={2018}, month={Oct}, pages={369–380} }
 @article{huang_kim_hou_cann_jones_jiang_2017, title={Flexoelectric characterization of BaTiO3-0.08Bi(Zn1/2Ti1/2)O-3}, volume={110}, number={22}, journal={Applied Physics Letters}, author={Huang, S. J. and Kim, T. and Hou, D. and Cann, D. and Jones, J. L. and Jiang, X. N.}, year={2017} }
 @article{hou_aksel_fancher_usher_hoshina_takeda_tsurumi_jones_2017, title={Formation of sodium bismuth titanatebarium titanate during solid-state synthesis}, volume={100}, ISSN={["1551-2916"]}, DOI={10.1111/jace.14631}, abstractNote={Abstract}, number={4}, journal={JOURNAL OF THE AMERICAN CERAMIC SOCIETY}, author={Hou, Dong and Aksel, Elena and Fancher, Chris M. and Usher, Tedi-Marie and Hoshina, Takuya and Takeda, Hiroaki and Tsurumi, Takaaki and Jones, Jacob L.}, year={2017}, month={Apr}, pages={1330–1338} }
 @article{zhao_hou_chung_yu_liu_li_jones_2017, title={Local structural behavior of PbZr0.5Ti0.5O3 during electric field application via in situ pair distribution function study}, volume={122}, number={17}, journal={Journal of Applied Physics}, author={Zhao, C. H. and Hou, D. and Chung, C. C. and Yu, Y. Y. and Liu, W. F. and Li, S. T. and Jones, J. L.}, year={2017} }
 @article{hou_usher_zhou_raengthon_triamnak_cann_forrester_jones_2017, title={Temperature-induced local and average structural changes in BaTiO3-xBi(Zn1/2Ti1/2)O-3 solid solutions: The origin of high temperature dielectric permittivity}, volume={122}, number={6}, journal={Journal of Applied Physics}, author={Hou, D. and Usher, T. M. and Zhou, H. H. and Raengthon, N. and Triamnak, N. and Cann, D. P. and Forrester, J. S. and Jones, J. L.}, year={2017} }
 @article{rost_sachet_borman_moballegh_dickey_hou_jones_curtarolo_maria_2015, title={Entropy-stabilized oxides}, volume={6}, journal={Nature Communications}, author={Rost, C. M. and Sachet, E. and Borman, T. and Moballegh, A. and Dickey, E. C. and Hou, D. and Jones, J. L. and Curtarolo, S. and Maria, J. P.}, year={2015} }
 @article{hou_fancher_zhao_esteves_jones_2015, title={Processing and crystallographic structure of non-equilibrium Si-doped HfO2}, volume={117}, number={24}, journal={Journal of Applied Physics}, author={Hou, D. and Fancher, C. M. and Zhao, L. L. and Esteves, G. and Jones, J. L.}, year={2015} }
 @article{zhao_hou_usher_iamsasri_fancher_forrester_nishida_moghaddam_jones_2015, title={Structure of 3 at.% and 9 at.% Si-doped HfO2 from combined refinement of X-ray and neutron diffraction patterns}, volume={646}, ISSN={["1873-4669"]}, DOI={10.1016/j.jallcom.2015.06.084}, abstractNote={The crystal structure of 3 at.% and 9 at.% Si-doped HfO2 powder was determined through refinements using X-ray and neutron diffraction patterns. The lattice parameters, atomic positions, dopant occupancy, and the second phase fraction were determined with high precision using a combined full pattern fitting via the Rietveld method. The results show that both 3 at.% and 9 at.% Si-doped HfO2 powder exhibit the monoclinic crystal structure with P 1 21/c 1 space group. Through the combined refinement, the crystal structure parameters, especially for the positions and occupancies of the lighter atoms, were more precisely determined compared to independent X-ray diffraction refinement. Although the ionic radius of Si4+ is smaller than Hf4+, with increasing Si occupancy, the unit cell volume slightly increases; possible mechanisms for this effect are discussed. Moreover, the refined results provide evidence of the existence of a non-equilibrium phase of HfxSi1−xO2. The second phase (SiO2) fraction is determined as 0.17 at.% for 3 at.% Si-doped HfO2 powders and 1.7 at.% for 9 at.% Si-doped HfO2 powders.}, journal={JOURNAL OF ALLOYS AND COMPOUNDS}, author={Zhao, Lili and Hou, Dong and Usher, Tedi-Marie and Iamsasri, Thanakorn and Fancher, Chris M. and Forrester, Jennifer S. and Nishida, Toshikazu and Moghaddam, Saeed and Jones, Jacob L.}, year={2015}, month={Oct}, pages={655–661} }