Daniel J. Lichtenwalner

Ouyang, Y. Y., Tahir, M. A., Lichtenwalner, D. J., & Yellen, B. B. (2012). Origin of multiplexing capabilities of multifrequency magnetic ratchets. Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics, 85(4).

Jur, J. S., Wheeler, V. D., Lichtenwalner, D. J., Maria, J.-P., & Johnson, M. A. L. (2011). Epitaxial growth of lanthanide oxides La2O3 and Sc2O3 on GaN. APPLIED PHYSICS LETTERS, 98(4). https://doi.org/10.1063/1.3541883

Lee, B., Lichtenwalner, D. J., Novak, S. R., & Misra, V. (2011). Impact of AlTaO Dielectric Capping on Device Performance and Reliability for Advanced Metal Gate/High-k PMOS Application. IEEE TRANSACTIONS ON ELECTRON DEVICES, 58(9), 2928–2935. https://doi.org/10.1109/ted.2011.2160064

Lee, B., Novak, S. R., Lichtenwalner, D. J., Yang, X., & Misra, V. (2011). Investigation of the Origin of V-T/V-FB Modulation by La2O3 Capping Layer Approaches for NMOS Application: Role of La Diffusion, Effect of Host High-k Layer, and Interface Properties. IEEE TRANSACTIONS ON ELECTRON DEVICES, 58(9), 3106–3115. https://doi.org/10.1109/ted.2011.2159306

Yang, Z., Hoffmann, S., Lichtenwalner, D. J., Krim, J., & Kingon, A. I. (2011). Resolution of the transfer direction of field-evaporated gold atoms for nanofabrication and microelectromechanical system applications. Applied Physics Letters, 98(4).

Suri, R., Lichtenwalner, D. J., & Misra, V. (2010). Interfacial self cleaning during atomic layer deposition and annealing of HfO2 films on native (100)-GaAs substrates. APPLIED PHYSICS LETTERS, 96(11). https://doi.org/10.1063/1.3357422

Jayanti, S., Yang, X., Lichtenwalner, D. J., & Misra, V. (2010). Technique to improve performance of Al2O3 interpoly dielectric using a La2O3 interface scavenging layer for floating gate memory structures. APPLIED PHYSICS LETTERS, 96(9). https://doi.org/10.1063/1.3355547

Yang, Z., Lichtenwalner, D. J., Morris, A. S., III, Krim, J., & Kingon, A. I. (2009). Comparison of Au and Au-Ni Alloys as Contact Materials for MEMS Switches. JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 18(2), 287–295. https://doi.org/10.1109/JMEMS.2008.2010850

Lichtenwalner, D. J., Misra, V., Dhar, S., Ryu, S.-H., & Agarwal, A. (2009). High-mobility enhancement-mode 4H-SiC lateral field-effect transistors utilizing atomic layer deposited Al2O3 gate dielectric. APPLIED PHYSICS LETTERS, 95(15). https://doi.org/10.1063/1.3251076

Lee, H. Y., Lee, J. H., Kim, J. J., Lichtenwalner, D. J., & Kingon, A. I. (2009). Zn-Sn co-doping effect on crystallization and texturing characteristics of indium oxide thin films. Journal of Ceramic Processing Research, 10, S116–119.

Kirsch, P. D., Sivasubramani, P., Huang, J., Young, C. D., Quevedo-Lopez, M. A., Wen, H. C., … Kingon, A. I. (2008). Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning. APPLIED PHYSICS LETTERS, 92(9). https://doi.org/10.1063/1.2890056

LeBeau, J. M., Jur, J. S., Lichtenwalner, D. J., Craft, H. S., Maria, J.-P., Kingon, A. I., … Stemmer, S. (2008). High temperature stability of Hf-based gate dielectric stacks with rare-earth oxide layers for threshold voltage control. Applied Physics Letters, 92(11), 112912. https://doi.org/10.1063/1.2901036

Suri, R., Lichtenwalner, D. J., & Misra, V. (2008). Impact of elemental arsenic on electrical characteristics of metal-oxide-semiconductor capacitors on GaAs using atomic-layer deposited HfO2 gate dielectric. APPLIED PHYSICS LETTERS, 92(24). https://doi.org/10.1063/1.2949079

Yang, Z., Lichtenwalner, D., Morris, A., Menzel, S., Nauenheim, C., Gruverman, A., … Kingon, A. I. (2007). A new test facility for efficient evaluation of MEMS contact materials. JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 17(9), 1788–1795. https://doi.org/10.1088/0960-1317/17/9/006

Inoue, N., Lichtenwalner, D. J., Jur, J. S., & Kingon, A. I. (2007). Analysis of interface states in LaSixOy metal-insulator-semiconductor structures. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 46(10A), 6480–6488. https://doi.org/10.1143/jjap.46.6480

Lichtenwalner, D. J., Hydrick, A. E., & Kingon, A. I. (2007). Flexible thin film temperature and strain sensor array utilizing a novel sensing concept. SENSORS AND ACTUATORS A-PHYSICAL, 135(2), 593–597. https://doi.org/10.1016/j.sna.2006.07.019

Jur, J. S., Lichtenwalner, D. J., & Kingon, A. I. (2007). High temperature stability of lanthanum silicate dielectric on Si (001). APPLIED PHYSICS LETTERS, 90(10). https://doi.org/10.1063/1.2712805

Lichtenwalner, D. J., Jur, J. S., Jha, R., Inoue, N., Chen, B., Misra, V., & Kingon, A. I. (2006). High-temperature stability of lanthanum silicate gate dielectric MIS devices with Ta and TaN electrodes. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 153(9), F210–F214. https://doi.org/10.1149/1.2218757

Alshareef, H. N., Quevedo-Lopez, M., Wen, H. C., Harris, R., Kirsch, P., Majhi, P., … Kingon, A. I. (2006). Work function engineering using lanthanum oxide interfacial layers. APPLIED PHYSICS LETTERS, 89(23). https://doi.org/10.1063/1.2396918

Lichtenwalner, D. J., Jur, J. S., Kingon, A. I., Agustin, M. P., Yang, Y., Stemmer, S., … Garfunkel, E. (2005). Lanthanum silicate gate dielectric stacks with subnanometer equivalent oxide thickness utilizing an interfacial silica consumption reaction. JOURNAL OF APPLIED PHYSICS, 98(2). https://doi.org/10.1063/1.1988967

Kingon, A. I., Al-Shareef, H. N., Auciello, O. H., Gifford, K. D., Lichtenwalner, D. J., & Dat, R. (1996). Hybrid metal/metal oxide electrodes for ferroelectric capacitors. Washington, DC: U.S. Patent and Trademark Office.