@article{ives_zeller_lucovsky_schamiloglu_marsden_collins_nichols_karimov_2015, title={Multipactor coating for sapphire RF windows using remote plasma-assisted deposition}, volume={43}, DOI={10.1109/tps.2015.2450678}, number={8}, journal={IEEE Transactions on Plasma Science}, author={Ives, R. L. and Zeller, D. and Lucovsky, G. and Schamiloglu, E. and Marsden, D. and Collins, G. and Nichols, K. and Karimov, R.}, year={2015}, pages={2571–2580} }
 @article{lucovsky_zeller_cheng_zhang_2014, title={Remote plasma-processing (RPP), medium range order, and precursor sites for dangling bond defects in "amorphous-Si(H)" alloys: Photovoltaic and thin film transistor devices}, volume={242}, DOI={10.1016/j.surfcoat.2013.06.104}, journal={Surface & Coatings Technology}, author={Lucovsky, G. and Zeller, D. J. and Cheng, C. and Zhang, Y.}, year={2014}, pages={183–186} }
 @article{lucovsky_kim_wu_zeller_2013, title={Noncrystalline SiO2 and GeO2: Process induced pre-existing defects and vacated O-atom intrinsic bonding sites}, volume={31}, DOI={10.1116/1.4773923}, number={1}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Lucovsky, G. and Kim, J. and Wu, K. and Zeller, D.}, year={2013} }
 @inproceedings{lucovsky_zeller_kim_wu_2013, title={Process induced pre-existing defects in non-crystalline SiO2 and GeO2 at vacated O-atom bonding sites and comparisons with Ge-S(Se) alloy bonding sites}, volume={428}, DOI={10.1088/1742-6596/428/1/012017}, booktitle={Xxist international symposium on the jahn-teller effect 2012}, author={Lucovsky, G. and Zeller, D. and Kim, J. and Wu, K.}, year={2013} }
 @article{lucovsky_parsons_zeller_kim_2013, title={Spectroscopic detection of medium range order in device grade hydrogenated amorphous silicon}, volume={52}, DOI={10.7567/jjap.52.04cr10}, number={4}, journal={Japanese Journal of Applied Physics}, author={Lucovsky, G. and Parsons, G. and Zeller, D. and Kim, J.}, year={2013} }
 @article{lucovsky_kim_wu_zeller_papas_whitten_2011, title={Non-crystalline SiO(2): processing induced pre-existing defects associated with vacated O-atom intrinsic bonding sites}, volume={13}, number={11-12}, journal={Journal of Optoelectronics and Advanced Materials}, author={Lucovsky, G. and Kim, J. W. and Wu, K. and Zeller, D. and Papas, B. and Whitten, J. L.}, year={2011}, pages={1359–1363} }
 @inproceedings{lucovsky_zeller_whitten_2011, title={O-vacancies in transition metal (TM) oxides: Coordination and local site symmetry of transition and negative ion states in TM(2)O(3) and TMO(2) oxides}, volume={88}, DOI={10.1016/j.mee.2011.03.153}, number={7}, booktitle={Microelectronic Engineering}, author={Lucovsky, G. and Zeller, D. and Whitten, J. L.}, year={2011}, pages={1471–1474} }
 @inproceedings{lucovsky_zeller_2011, title={Remote plasma enhanced chemical deposition of non-crystalline GeO(2) on Ge and Si substrates}, volume={11}, DOI={10.1166/jnn.2011.5090}, number={9}, booktitle={Journal of Nanoscience and Nanotechnology}, author={Lucovsky, G. and Zeller, D.}, year={2011}, pages={7974–7981} }
 @inproceedings{lucovsky_zeller_wu_whitten_2011, title={Remote plasma-deposited GeO(2) with quartz-like Ge- and O-local bonding: Band-edge state and O-vacancy comparisons with SiO(2)}, volume={88}, DOI={10.1016/j.mee.2011.03.152}, number={7}, booktitle={Microelectronic Engineering}, author={Lucovsky, G. and Zeller, D. and Wu, K. and Whitten, J. L.}, year={2011}, pages={1537–1540} }
 @article{lucovsky_parsons_zeller_wu_papas_whitten_lujan_street_2011, title={Spectroscopic detection of medium range order in device quality hydrogenated amorphous silicon, a-Si(H)}, volume={13}, number={11-12}, journal={Journal of Optoelectronics and Advanced Materials}, author={Lucovsky, G. and Parsons, G. and Zeller, D. and Wu, K. and Papas, B. and Whitten, J. and Lujan, R. and Street, R. A.}, year={2011}, pages={1586–1589} }