Daniel James Zeller

Ives, R. L., Zeller, D., Lucovsky, G., Schamiloglu, E., Marsden, D., Collins, G., … Karimov, R. (2015). Multipactor Coating for Sapphire RF Windows Using Remote Plasma-Assisted Deposition. IEEE TRANSACTIONS ON PLASMA SCIENCE, 43(8), 2571–2580. https://doi.org/10.1109/tps.2015.2450678

Lucovsky, G., Zeller, D. J., Cheng, C., & Zhang, Y. (2014). Remote plasma-processing (RPP), medium range order, and precursor sites for dangling bond defects in "amorphous-Si(H)" alloys: Photovoltaic and thin film transistor devices. SURFACE & COATINGS TECHNOLOGY, 242, 183–186. https://doi.org/10.1016/j.surfcoat.2013.06.104

Lucovsky, G., Kim, J., Wu, K., & Zeller, D. (2013). Noncrystalline SiO2 and GeO2: Process induced pre-existing defects and vacated O-atom intrinsic bonding sites. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 31(1). https://doi.org/10.1116/1.4773923

Lucovsky, G., Zeller, D., Kim, J. W., & Wu, K. (2013). Process induced pre-existing defects in non-crystalline SiO2 and GeO2 at vacated O-atom bonding sites and comparisons with Ge-S(Se) alloy bonding sites. XXIST INTERNATIONAL SYMPOSIUM ON THE JAHN-TELLER EFFECT 2012, Vol. 428. https://doi.org/10.1088/1742-6596/428/1/012017

Lucovsky, G., Parsons, G., Zeller, D., & Kim, J. (2013). Spectroscopic Detection of Medium Range Order in Device Grade Hydrogenated Amorphous Silicon. JAPANESE JOURNAL OF APPLIED PHYSICS, 52(4). https://doi.org/10.7567/jjap.52.04cr10

Lucovsky, G., Kim, J. W., Wu, K., Zeller, D., Papas, B., & Whitten, J. L. (2011). Non-crystalline SiO(2): processing induced pre-existing defects associated with vacated O-atom intrinsic bonding sites. Journal of Optoelectronics and Advanced Materials, 13(11-12), 1359–1363.

Lucovsky, G., Zeller, D., & Whitten, J. L. (2011). O-vacancies in transition metal (TM) oxides: Coordination and local site symmetry of transition and negative ion states in TM2O3 and TMO2 oxides. Microelectronic Engineering, 88(7), 1471–1474. https://doi.org/10.1016/j.mee.2011.03.153

Lucovsky, G., & Zeller, D. (2011, September). Remote Plasma Enhanced Chemical Deposition of Non-Crystalline GeO2 on Ge and Si Substrates. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, Vol. 11, pp. 7974–7981. https://doi.org/10.1166/jnn.2011.5090

Lucovsky, G., Zeller, D., Wu, K., & Whitten, J. L. (2011). Remote plasma-deposited GeO2 with quartz-like Ge- and O-local bonding: Band-edge state and O-vacancy comparisons with SiO2. Microelectronic Engineering, 88(7), 1537–1540. https://doi.org/10.1016/j.mee.2011.03.152

Lucovsky, G., Parsons, G., Zeller, D., Wu, K., Papas, B., Whitten, J., … Street, R. A. (2011). Spectroscopic detection of medium range order in device quality hydrogenated amorphous silicon, a-Si(H). Journal of Optoelectronics and Advanced Materials, 13(11-12), 1586–1589.