@article{nevola_bataller_kumar_sridhar_frick_o'donnell_ade_maggard_kemper_gundogdu_et al._2021, title={Timescales of excited state relaxation in alpha-RuCl3 observed by time-resolved two-photon photoemission spectroscopy}, volume={103}, ISSN={["2469-9969"]}, url={https://doi.org/10.1103/PhysRevB.103.245105}, DOI={10.1103/PhysRevB.103.245105}, abstractNote={The nonequilibrium properties of strongly correlated materials present a target in the search for new phases of matter. It is important to observe the types of excitations that exist in these materials and their associated relaxation dynamics. We have studied the photoexcitations in a spin-orbit assisted Mott insulator $\ensuremath{\alpha}\text{\ensuremath{-}}\mathrm{Ru}{\mathrm{Cl}}_{3}$ using time-resolved two-photon photoemission spectroscopy and transient reflection spectroscopy. We find that photoexcited carriers (doublons) in the upper Hubbard band rapidly relax to Mott-Hubbard excitons on a timescale of less than 200 fs. Subsequently, further relaxation of these lower-energy quasiparticles occurs with an energy-dependent time constant of that ranges from 370 to 600 fs due to exciton cooling. The population of Mott-Hubbard excitons persists for timescales up to several microseconds.}, number={24}, journal={PHYSICAL REVIEW B}, author={Nevola, Dan and Bataller, Alexander and Kumar, Ankit and Sridhar, Samanvitha and Frick, Jordan and O'Donnell, Shaun and Ade, Harald and Maggard, Paul A. and Kemper, Alexander F. and Gundogdu, Kenan and et al.}, year={2021}, month={Jun} }
 @article{nevola_hoffman_bataller_ade_gundogdu_dougherty_2019, title={Rigid valence band shift due to molecular surface counter-doping of MoS2}, volume={679}, ISSN={["1879-2758"]}, DOI={10.1016/j.susc.2018.09.016}, abstractNote={Adsorption of the acceptor material tetracyanoquinodimethane can control optoelectronic properties of MoS2 by accepting defect generated excess negative charge from the surface that would otherwise interfere with radiative decay processes. Angle Resolved Photoelectron Spectroscopy measurements show that the MoS2 band structure near the Γ point shifts rigidly upward by ∼0.2 eV for a complete surface coverage of acceptor species as expected for an upward Fermi level shift due to charge transfer to the TCNQ. The molecular adsorbate orbitals visible in photoemission are indicative of an anionic species, consistent with interfacial charge transfer but without evidence for hybrid states arising from covalent adsorbate-surface interactions. Thus, our interface studies support the notion that molecular adsorbates are a useful tool for controlling optoelectronic functionality in 2D materials without fundamentally modifying their favorable band structures.}, journal={SURFACE SCIENCE}, author={Nevola, D. and Hoffman, B. C. and Bataller, A. and Ade, H. and Gundogdu, K. and Dougherty, D. B.}, year={2019}, month={Jan}, pages={254–258} }
 @article{abdurazakov_nevola_rustagi_freericks_dougherty_kemper_2018, title={Nonequilibrium electron dynamics in pump-probe spectroscopy: Role of excited phonon populations}, volume={98}, ISSN={["2469-9969"]}, url={http://www.scopus.com/inward/record.url?eid=2-s2.0-85058282950&partnerID=MN8TOARS}, DOI={10.1103/PhysRevB.98.245110}, abstractNote={We study the role of excited phonon populations in the relaxation rates of nonequilibrium electrons using a nonequilibrium Green's function formalism. The transient modifications in the phononic properties are accounted for by self-consistently solving the Dyson equation for the electron and phonon Green's functions. The pump-induced changes manifest in both the electronic and phononic spectral functions. We find that the excited phonon populations suppress the decay rates of nonequilibrium electrons due to enhanced phonon absorption. The increased phonon occupation also sets the nonequilibrium decay rates and the equilibrium scattering rates apart. The decay rates are found to be time dependent, and this is illustrated in the experimentally observed population decay of photoexcited ${\mathrm{Bi}}_{1.5}{\mathrm{Sb}}_{0.5}{\mathrm{Te}}_{1.7}{\mathrm{Se}}_{1.3}$.}, number={24}, journal={PHYSICAL REVIEW B}, publisher={American Physical Society (APS)}, author={Abdurazakov, O. and Nevola, D. and Rustagi, A. and Freericks, J. K. and Dougherty, D. B. and Kemper, A. F.}, year={2018}, month={Dec} }
 @article{stuart_gray_nevola_su_sachet_ulrich_dougherty_2016, title={Magnetoelectric oxide films for spin manipulation in graphene}, volume={10}, ISSN={["1862-6270"]}, DOI={10.1002/pssr.201510433}, abstractNote={The challenge of creating a graphene spin field effect transistor (spin‐FET) demands a magnetic gate dielectric material whose magnetization can be switched electrically. We have grown films of Cr2O3 on top of graphite and graphene by pulsed laser deposition that shows this crucial functionality. We demonstrate that the Cr2O3 films are magnetoelectric by poling them in combined electric and magnetic fields and then using magnetic force microscopy to observe spontaneous surface domain structure as a function of poling field. In addition, we show that the electric field created by a conducting AFM tip can be used to write magnetic patterns in the film that demonstrate the kind of continuous magnetoelectric control needed for a prototype spin‐FET. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)}, number={3}, journal={PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS}, author={Stuart, S. C. and Gray, B. and Nevola, D. and Su, L. and Sachet, E. and Ulrich, M. and Dougherty, D. B.}, year={2016}, month={Mar}, pages={242–247} }