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S. and et al.}, year={2015}, pages={27–41} } @article{wang_dhawan_du_batchelor_leonard_misra_vo-dinh_2013, title={Molecular sentinel-on-chip for SERS-based biosensing}, volume={15}, ISSN={["1463-9076"]}, DOI={10.1039/c3cp00076a}, number={16}, journal={PHYSICAL CHEMISTRY CHEMICAL PHYSICS}, author={Wang, Hsin-Neng and Dhawan, Anuj and Du, Yan and Batchelor, Dale and Leonard, Donovan N. and Misra, Veena and Vo-Dinh, Tuan}, year={2013}, pages={6008–6015} } @misc{lecompte_batchelor_demitroff_vogel_mooney_rock_seidel_2013, title={Reply to Boslough: Prior studies validating research are ignored}, volume={110}, number={18}, journal={Proceedings of the National Academy of Sciences of the United States of America}, author={LeCompte, M. A. and Batchelor, D. and Demitroff, M. N. and Vogel, E. K. and Mooney, C. and Rock, B. N. and Seidel, A. W.}, year={2013}, pages={E1652–1652} } @article{lecompte_goodyear_demitroff_batchelor_vogel_mooney_rock_seidel_2012, title={Independent evaluation of conflicting microspherule results from different investigations of the Younger Dryas impact hypothesis}, volume={109}, number={44}, journal={Proceedings of the National Academy of Sciences of the United States of America}, author={LeCompte, M. A. and Goodyear, A. C. and Demitroff, M. N. and Batchelor, D. and Vogel, E. K. and Mooney, C. and Rock, B. N. and Seidel, A. W.}, year={2012}, pages={E2960–2969} } @article{clavero_beringer_roach_skuza_wong_batchelor_reece_lukaszew_2012, title={Strain effects on the crystal growth and superconducting properties of epitaxial niobium ultrathin films}, volume={12}, number={5}, journal={Crystal Growth and Design}, author={Clavero, C. and Beringer, D. B. and Roach, W. M. and Skuza, J. R. and Wong, K. C. and Batchelor, A. D. and Reece, C. E. and Lukaszew, R. A.}, year={2012}, pages={2588–2593} } @article{dhawan_du_batchelor_wang_leonard_misra_ozturk_gerhold_vo-dinh_2011, title={Hybrid Top-Down and Bottom-Up Fabrication Approach for Wafer-Scale Plasmonic Nanoplatforms}, volume={7}, ISSN={["1613-6810"]}, DOI={10.1002/smll.201002186}, number={6}, journal={SMALL}, author={Dhawan, Anuj and Du, Yan and Batchelor, Dale and Wang, Hsin-Neng and Leonard, Donovon and Misra, Veena and Ozturk, Mehmet and Gerhold, Michael D. and Vo-Dinh, Tuan}, year={2011}, month={Mar}, pages={727–731} } @article{maheshwari_tian_reece_kelley_myneni_stevie_rigsbee_batchelor_griffis_2011, title={Surface analysis of Nb materials for SRF cavities}, volume={43}, ISSN={["1096-9918"]}, DOI={10.1002/sia.3513}, number={1-2}, journal={SURFACE AND INTERFACE ANALYSIS}, author={Maheshwari, P. and Tian, H. and Reece, C. E. and Kelley, M. J. and Myneni, G. R. and Stevie, F. A. and Rigsbee, J. M. and Batchelor, A. D. and Griffis, D. P.}, year={2011}, pages={151–153} } @article{wong_haslauer_anantharamaiah_pourdeyhimi_batchelor_griffis_2010, title={Focused Ion Beam Characterization of Bicomponent Polymer Fibers}, volume={16}, ISSN={["1431-9276"]}, DOI={10.1017/s1431927610000115}, number={3}, journal={MICROSCOPY AND MICROANALYSIS}, author={Wong, K. C. and Haslauer, C. M. and Anantharamaiah, N. and Pourdeyhimi, B. and Batchelor, A. D. and Griffis, D. P.}, year={2010}, month={Jun}, pages={282–290} } @article{bishop_park_gu_wagner_reltmeier_batchelor_zakharov_liliental-weber_davis_2007, title={Growth evolution and pendeo-epitaxy of non-polar AlN and GaN thin films on 4H-SiC (11(2)over-bar0)}, volume={300}, ISSN={["1873-5002"]}, DOI={10.1016/j.jcrysgro.2006.10.207}, number={1}, journal={JOURNAL OF CRYSTAL GROWTH}, author={Bishop, S. M. and Park, J. -S. and Gu, J. and Wagner, B. P. and Reltmeier, Z. J. and Batchelor, D. A. and Zakharov, D. N. and Liliental-Weber, Z. and Davis, R. F.}, year={2007}, month={Mar}, pages={83–89} } @article{a.d. garetto_a.d. batchelor_griffis_p.e._russell_2007, title={Transferable Internal Reservoir Device for Electron and Ion Beam Induced Chemistry}, volume={86}, journal={Microscopy and Analysis}, author={A.D. Garetto, R.R. Garcia and A.D. Batchelor, C.L. Progl and Griffis, D.P. and P.E. and Russell}, year={2007}, pages={5–6} } @article{gonzalez_silva_bunker_batchelor_russell_2003, title={Electrical characterization of InGaN quantum well p-n heterostructures}, volume={34}, ISSN={["0026-2692"]}, DOI={10.1016/S0026-2692(03)00072-7}, number={5-8}, journal={MICROELECTRONICS JOURNAL}, author={Gonzalez, JC and Silva, MIN and Bunker, KL and Batchelor, AD and Russell, PE}, year={2003}, pages={455–457} } @article{edwards_bremser_batchelor_buyanova_madsen_yoo_welhkamp_wilmers_cobet_esser_et al._2000, title={Optical characterization of wide bandgap semiconductors}, volume={364}, ISSN={["0040-6090"]}, DOI={10.1016/S0040-6090(99)00903-7}, number={1-2}, journal={THIN SOLID FILMS}, author={Edwards, NV and Bremser, MD and Batchelor, AD and Buyanova, IA and Madsen, LD and Yoo, SD and Welhkamp, T and Wilmers, K and Cobet, C and Esser, N and et al.}, year={2000}, month={Mar}, pages={98–106} } @article{pa o'neil_ozturk_batchelor_xu_maher_1999, title={Effects of oxygen during selective silicon epitaxial growth using disilane and chlorine}, volume={146}, ISSN={["0013-4651"]}, DOI={10.1149/1.1391938}, number={6}, journal={JOURNAL OF THE ELECTROCHEMICAL SOCIETY}, author={PA O'Neil and Ozturk, MC and Batchelor, AD and Xu, MM and Maher, DM}, year={1999}, month={Jun}, pages={2344–2352} } @article{pa o'neil_ozturk_batchelor_maher_1999, title={Effects of oxygen on selective silicon deposition using disilane}, volume={38}, ISSN={["0167-577X"]}, DOI={10.1016/S0167-577X(98)00200-6}, number={6}, journal={MATERIALS LETTERS}, author={PA O'Neil and Ozturk, MC and Batchelor, AD and Maher, DM}, year={1999}, month={Mar}, pages={418–422} } @article{pa o'neil_ozturk_batchelor_venables_xu_maher_1999, title={Growth of selective silicon epitaxy using disilane and chlorine on heavily implanted substrates - I. Role of implanted BF2}, volume={146}, ISSN={["0013-4651"]}, DOI={10.1149/1.1392052}, number={8}, journal={JOURNAL OF THE ELECTROCHEMICAL SOCIETY}, author={PA O'Neil and Ozturk, MC and Batchelor, AD and Venables, D and Xu, MM and Maher, DM}, year={1999}, month={Aug}, pages={3070–3078} } @article{pa o'neil_ozturk_batchelor_venables_maher_1999, title={Growth of selective silicon epitaxy using disilane and chlorine on heavily implanted substrates - II. Role of implanted arsenic}, volume={146}, ISSN={["0013-4651"]}, DOI={10.1149/1.1392053}, number={8}, journal={JOURNAL OF THE ELECTROCHEMICAL SOCIETY}, author={PA O'Neil and Ozturk, MC and Batchelor, AD and Venables, D and Maher, DM}, year={1999}, month={Aug}, pages={3079–3086} } @article{gehrke_linthicum_thomson_rajagopal_batchelor_davis_1999, title={Pendeo-epitaxy of gallium nitride and aluminum nitride films and heterostructures on silicon carbide substrate}, volume={4S1}, number={G3.2}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Gehrke, T. and Linthicum, K. J. and Thomson, D. B. and Rajagopal, P. and Batchelor, A. D. and Davis, R. F.}, year={1999} } @article{linthicum_gehrke_thomson_carlson_rajagopal_smith_batchelor_davis_1999, title={Pendeo-epitaxy of gallium nitride thin films}, volume={75}, DOI={10.1063/1.124317}, number={2}, journal={Applied Physics Letters}, author={Linthicum, K. J. and Gehrke, T. and Thomson, D. B. and Carlson, E. P. and Rajagopal, P. and Smith, T. and Batchelor, D. and Davis, R.}, year={1999}, pages={196–198} } @article{pa o'neil_ozturk_batchelor_xu_maher_1999, title={Quality of selective silicon epitaxial films deposited using disilane and chlorine}, volume={146}, ISSN={["0013-4651"]}, DOI={10.1149/1.1391937}, number={6}, journal={JOURNAL OF THE ELECTROCHEMICAL SOCIETY}, author={PA O'Neil and Ozturk, MC and Batchelor, AD and Xu, MM and Maher, DM}, year={1999}, month={Jun}, pages={2337–2343} } @article{edwards_batchelor_buyanova_madsen_bremser_davis_aspnes_monemar_1999, title={Relaxation phenomena in GaN/ AlN/ 6H-SiC heterostructures}, volume={4S1}, DOI={10.1557/s1092578300002830}, number={G3.78}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Edwards, N. V. and Batchelor, A. D. and Buyanova, I. A. and Madsen, L. D. and Bremser, M. D. and Davis, R. F. and Aspnes, D. E. and Monemar, B.}, year={1999} } @article{li_mirabedini_vogel_henson_batchelor_wortman_kuehn_1998, title={Effects of Si source gases (SiH4 and Si2H6) on polycrystalline- Si1-xGex deposited on oxide by RTCVD}, volume={1}, number={3}, journal={Electrochemical and Solid State Letters}, author={Li, V. Z. Q. and Mirabedini, M. R. and Vogel, E. and Henson, K. and Batchelor, A. D. and Wortman, J. J. and Kuehn, R. T.}, year={1998}, pages={153–155} } @article{edwards_bremser_davis_batchelor_yoo_karan_aspnes_1998, title={Trends in residual stress for GaN/AlN/6H-SiC heterostructures}, volume={73}, ISSN={["1077-3118"]}, DOI={10.1063/1.122597}, number={19}, journal={APPLIED PHYSICS LETTERS}, author={Edwards, NV and Bremser, MD and Davis, RF and Batchelor, AD and Yoo, SD and Karan, CF and Aspnes, DE}, year={1998}, month={Nov}, pages={2808–2810} } @article{oneil_ozturk_violette_batchelor_christensen_maher_1997, title={Optimization of process conditions for selective silicon epitaxy using disilane, hydrogen, and chlorine}, volume={144}, ISSN={["0013-4651"]}, DOI={10.1149/1.1838003}, number={9}, journal={JOURNAL OF THE ELECTROCHEMICAL SOCIETY}, author={ONeil, PA and Ozturk, MC and Violette, KE and Batchelor, D and Christensen, K and Maher, DM}, year={1997}, month={Sep}, pages={3309–3315} } @article{li_mirabedini_kuehn_wortman_ozturk_batchelor_christensen_maher_1997, title={Rapid thermal chemical vapor deposition of in situ boron doped polycrystalline silicon germanium films on silicon dioxide for complimentary metal oxide semiconductor applications}, volume={71}, DOI={10.1063/1.120344}, number={23}, journal={Applied Physics Letters}, author={Li, V. Z. Q. and Mirabedini, M. R. and Kuehn, R. T. and Wortman, J. J. and Ozturk, M. C. and Batchelor, D. and Christensen, K. and Maher, D. M.}, year={1997}, pages={3388–3390} }