@article{jin_aggarwal_wei_nori_kumar_ponarin_smirnov_narayan_narayan_2011, title={Intrinsic Room-Temperature Ferromagnetic Properties of Ni-Doped ZnO Thin Films}, volume={42}, ISSN={1073-5623 1543-1940}, url={http://dx.doi.org/10.1007/S11661-010-0479-9}, DOI={10.1007/s11661-010-0479-9}, number={11}, journal={Metallurgical and Materials Transactions A}, publisher={Springer Science and Business Media LLC}, author={Jin, C. and Aggarwal, R. and Wei, W. and Nori, S. and Kumar, D. and Ponarin, D. and Smirnov, A. I. and Narayan, J. and Narayan, R. J.}, year={2011}, month={Nov}, pages={3250–3254} }
 @article{wei_nori_jin_narayan_narayan_ponarin_smirnov_2010, title={Mott transition in Ga-doped MgxZn1-xO: A direct observation}, volume={171}, ISSN={["1873-4944"]}, url={http://www.scopus.com/inward/record.url?eid=2-s2.0-77953133966&partnerID=MN8TOARS}, DOI={10.1016/j.mseb.2010.03.078}, abstractNote={This paper reports the direct evidence for Mott transition in Ga-doped MgxZn1−xO thin films. Highly transparent Ga-doped MgxZn1−xO thin films were grown on c-plane sapphire substrates using pulsed laser deposition. 0.1 at.%, 0.5 at.% and 1 at.% Ga-doped Mg0.1Zn0.9O films were selected for resistivity measurements in the temperature range from 250 K to 40 mK. The 0.1 at.% Ga-doped Mg0.1Zn0.9O thin film showed typical insulator-like behavior and the 1 at.% Ga-doped Mg0.1Zn0.9O thin film showed typical metal-like behavior. The 0.5 at.% Ga-doped Mg0.1Zn0.9O film showed increasing resistivity with decreasing temperature; resistivity was saturated with a value of 1.15 × 10−2 Ω cm at 40 mK, which is characteristic of the metal–insulator transition region. Temperature-dependent conductivity σ(T) in the low temperature range revealed that the electron-electron scattering is the dominant dephasing mechanism. The inelastic scattering time is found to vary as T−3/2.}, number={1-3}, journal={MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS}, publisher={Elsevier BV}, author={Wei, Wei and Nori, Sudhakar and Jin, Chunming and Narayan, Jagdish and Narayan, Roger J. and Ponarin, Dmtri and Smirnov, Alex}, year={2010}, month={Jul}, pages={90–92} }
 @article{nazaretski_pelekhov_martin_zalalutdinov_ponarin_smirnov_hammel_movshovich_2009, title={Detection of localized ferromagnetic resonance in a continuous thin film via magnetic resonance force microscopy}, volume={79}, ISSN={["1098-0121"]}, url={http://www.scopus.com/inward/record.url?eid=2-s2.0-65149101952&partnerID=MN8TOARS}, DOI={10.1103/physrevb.79.132401}, abstractNote={We present magnetic resonance force microscopy (MRFM) measurements of ferromagnetic resonance in a 50 nm thick permalloy film tilted with respect to the direction of the external magnetic field. At small probe-sample distances the MRFM spectrum breaks up into multiple modes, which we identify as local ferromagnetic resonances confined by the magnetic field of the MRFM tip. Micromagnetic simulations support this identification of the modes and show they are stabilized in the region where the dipolar tip field has a component antiparallel to the applied field.}, number={13}, journal={PHYSICAL REVIEW B}, author={Nazaretski, E. and Pelekhov, D. V. and Martin, I. and Zalalutdinov, M. and Ponarin, D. and Smirnov, A. and Hammel, P. C. and Movshovich, R.}, year={2009}, month={Apr} }