Emre Alptekin

Alptekin, E., & Ozturk, M. C. (2010). NixPt1-xSi/n-Si contacts with sub-0.1 eV effective Schottky barrier heights obtained by sulfur segregation. MICROELECTRONIC ENGINEERING, 87(11), 2358–2360. https://doi.org/10.1016/j.mee.2010.04.008

Alptekin, E., & Ozturk, M. C. (2010). Ultrahigh Vacuum Chemical Vapor Deposition of Doped and Intrinsic Si1-xCx Epitaxy from Disilane, Trimethylsilane, and Phosphine. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 157(6), H699–H704. https://doi.org/10.1149/1.3414167

Alptekin, E., Ozturk, M. C., Misra, V., Cho, Y., Kim, Y., & Chopra, S. (2009). Erbium Silicide Formation on Si1-xCx Epitaxial Layers. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 156(5), H378–H383. https://doi.org/10.1149/1.3097189

Alptekin, E., Kirkpatrick, C. J., Misra, V., & Ozturk, M. C. (2009). Platinum Germanosilicide Contacts Formed on Strained and Relaxed Si1-xGex Layers. IEEE TRANSACTIONS ON ELECTRON DEVICES, 56(6), 1220–1227. https://doi.org/10.1109/TED.2009.2018159

Alptekin, E., Ozturk, M. C., & Misra, V. (2009). Schottky Barrier Height of Erbium Silicide on Si1-xCx. IEEE ELECTRON DEVICE LETTERS, 30(9), 949–951. https://doi.org/10.1109/LED.2009.2026297

Alptekin, E., & Ozturk, M. C. (2009). Schottky Barrier Height of Nickel Silicide Contacts Formed on Si1-xCx Epitaxial Layers. IEEE ELECTRON DEVICE LETTERS, 30(12), 1320–1322. https://doi.org/10.1109/LED.2009.2034114

Alptekin, E., & Ozturk, M. C. (2009). Tuning of the Nickel Silicide Schottky Barrier Height on p-Type Silicon by Indium Implantation. IEEE ELECTRON DEVICE LETTERS, 30(12), 1272–1274. https://doi.org/10.1109/LED.2009.2033451

Alptekin, E., Ozturk, M. C., & Misra, V. (2009). Tuning of the Platinum Silicide Schottky Barrier Height on n-Type Silicon by Sulfur Segregation. IEEE ELECTRON DEVICE LETTERS, 30(4), 331–333. https://doi.org/10.1109/LED.2009.2014182