Emre Alptekin

Alptekin, E., & Ozturk, M. C. (2010). NixPt1-xSi/n-Si contacts with sub-0.1 eV effective Schottky barrier heights obtained by sulfur segregation. Microelectronic Engineering, 87(11), 2358–2360. https://doi.org/10.1016/j.mee.2010.04.008

Alptekin, E., & Ozturk, M. C. (2010). Ultrahigh vacuum chemical vapor deposition of doped and intrinsic Si1-xCx epitaxy from disilane, trimethylsilane, and phosphine. Journal of the Electrochemical Society, 157(6), H699–704. https://doi.org/10.1149/1.3414167

Alptekin, E., Ozturk, M. C., Misra, V., Cho, Y., Kim, Y., & Chopra, S. (2009). Erbium silicide formation on Si1-xCx epitaxial layers. Journal of the Electrochemical Society, 156(5), H378–383. https://doi.org/10.1149/1.3097189

Alptekin, E., Kirkpatrick, C. J., Misra, V., & Ozturk, M. C. (2009). Platinum germanosilicide contacts formed on strained and relaxed Si1-xGex layers. IEEE Transactions on Electron Devices, 56(6), 1220–1227. https://doi.org/10.1109/TED.2009.2018159

Alptekin, E., Ozturk, M. C., & Misra, V. (2009). Schottky barrier height of erbium silicide on Si1-xCx. IEEE Electron Device Letters, 30(9), 949–951. https://doi.org/10.1109/LED.2009.2026297

Alptekin, E., & Ozturk, M. C. (2009). Schottky barrier height of nickel silicide contacts formed on Si1-xCx epitaxial layers. IEEE Electron Device Letters, 30(12), 1320–1322. https://doi.org/10.1109/LED.2009.2034114

Alptekin, E., & Ozturk, M. C. (2009). Tuning of the nickel silicide schottky barrier height on P-type silicon by indium implantation. IEEE Electron Device Letters, 30(12), 1272–1274. https://doi.org/10.1109/LED.2009.2033451

Alptekin, E., Ozturk, M. C., & Misra, V. (2009). Tuning of the platinum silicide schottky barrier height on n-type silicon by sulfur segregation. IEEE Electron Device Letters, 30(4), 331–333. https://doi.org/10.1109/LED.2009.2014182