Works (7)

2022 journal article

Improved LED output power and external quantum efficiency using InGaN templates

APPLIED PHYSICS LETTERS, 2.

By: M. Abdelhamid, E. Routh, B. Hagar & S. Bedair

Sources: ORCID, Web Of Science
Added: May 4, 2022

2022 journal article

Ohmic co-doped GaN/InGaN tunneling diode grown by MOCVD

APPLIED PHYSICS LETTERS, 8.

Sources: ORCID, Web Of Science
Added: August 6, 2022

2022 journal article

Reduction of V-pit density and depth in InGaN semibulk templates and improved LED performance with insertion of high temperature semibulk layers

Semiconductor Science and Technology, 5.

By: E. Routh, M. Abdelhamid, P. Colter, A. Bonner, N. El-Masry & S. Bedair

Source: ORCID
Added: May 6, 2022

2021 journal article

P-type InxGa1-xN semibulk templates (0.02 < x < 0.16) with room temperature hole concentration of mid-10(19) cm(-3) and device quality surface morphology

P-type InxGa1-xN semibulk templates (0.02 < x < 0.16) with room temperature hole concentration of mid-10(19) cm(-3) and device quality surface morphology. APPLIED PHYSICS LETTERS, 9.

Sources: Web Of Science, ORCID
Added: February 21, 2022

2021 journal article

Shifting LED emission from blue to the green gap spectral range using In0.12Ga0.88N relaxed templates

SUPERLATTICES AND MICROSTRUCTURES, 12.

By: M. Abdelhamid, E. Routh, A. Shaker & S. Bedair

Sources: Web Of Science, ORCID
Added: November 15, 2021

2021 journal article

The dependence of the emission from MQWs on the indium content in the underlying InGaN templates: experimental and modeling results

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 36(3).

By: M. Abdelhamid, E. Routh & S. Bedair

Sources: Web Of Science, ORCID
Added: March 8, 2021

2020 journal article

Device quality templates of InxGa1-xN (x < 0.1) with defect densities comparable to GaN

Device quality templates of InxGa1-xN (x < 0.1) with defect densities comparable to GaN. APPLIED PHYSICS LETTERS, 117(5), 052103.

Sources: Web Of Science, ORCID
Added: September 7, 2020