Evyn Lee Routh

GaN-based tunnel junction with negative differential resistance by metalorganic chemical vapor deposition

APPLIED PHYSICS LETTERS, 125(8).

Improved LED output power and external quantum efficiency using InGaN templates

APPLIED PHYSICS LETTERS, 120(8).

Ohmic co-doped GaN/InGaN tunneling diode grown by MOCVD

APPLIED PHYSICS LETTERS, 121(5).

Reduction of V-pit density and depth in InGaN semibulk templates and improved LED performance with insertion of high temperature semibulk layers

Semiconductor Science and Technology, 5.

P-type InxGa1-xN semibulk templates (0.02 < x < 0.16) with room temperature hole concentration of mid-10(19) cm(-3) and device quality surface morphology

P-type InxGa1-xN semibulk templates (0.02 < x < 0.16) with room temperature hole concentration of mid-10(19) cm(-3) and device quality surface morphology. APPLIED PHYSICS LETTERS, 119(12).

Shifting LED emission from blue to the green gap spectral range using In0.12Ga0.88N relaxed templates

SUPERLATTICES AND MICROSTRUCTURES, 160.

The dependence of the emission from MQWs on the indium content in the underlying InGaN templates: experimental and modeling results

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 36(3).

Device quality templates of InxGa1-xN (x < 0.1) with defect densities comparable to GaN

Device quality templates of InxGa1-xN (x < 0.1) with defect densities comparable to GaN. APPLIED PHYSICS LETTERS, 117(5).