Felix W. Kaess

Szymanski, D., Wang, K., Kaess, F., Kirste, R., Mita, S., Reddy, P., … Collazo, R. (2022). Systematic oxygen impurity reduction in smooth N-polar GaN by chemical potential control. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37(1). https://doi.org/10.1088/1361-6641/ac3638

Washiyama, S., Reddy, P., Kaess, F., Kirste, R., Mita, S., Collazo, R., & Sitar, Z. (2018). A thermodynamic supersaturation model for the growth of aluminum gallium nitride by metalorganic chemical vapor deposition. JOURNAL OF APPLIED PHYSICS, 124(11). https://doi.org/10.1063/1.5045058

Reddy, P., Washiyama, S., Mecouch, W., Hernandez-Balderrama, L. H., Kaess, F., Breckenridge, M. H., … Sitar, Z. (2018). Plasma enhanced chemical vapor deposition of SiO2 and SiNx on AlGaN: Band offsets and interface studies as a function of Al composition. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 36(6). https://doi.org/10.1116/1.5050501

Blumenschein, N., Slomski, M., Paskov, P. P., Kaess, F., Breckenridge, M. H., Muth, J. F., & Paskova, T. (2018). Thermal conductivity of bulk and thin film beta-Ga2O3 measured by the 3 omega technique. OXIDE-BASED MATERIALS AND DEVICES IX, Vol. 10533. https://doi.org/10.1117/12.2288267

Sarkar, B., Reddy, P., Kaess, F., Haidet, B. B., Tweedie, J., Mita, S., … al. (2017). (Invited) Material Considerations for the Development of III-nitride Power Devices. GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 7, Vol. 80, pp. 29–36. https://doi.org/10.1149/08007.0029ecst

Reddy, P., Kaess, F., Tweedie, J., Kirste, R., Mita, S., Collazo, R., & Sitar, Z. (2017). Defect quasi Fermi level control-based C-N reduction in GaN: Evidence for the role of minority carriers. APPLIED PHYSICS LETTERS, 111(15). https://doi.org/10.1063/1.5000720

Reddy, P., Sarkar, B., Kaess, F., Gerhold, M., Kohn, E., Collazo, R., & Sitar, Z. (2017). Defect-free Ni/GaN Schottky barrier behavior with high temperature stability. APPLIED PHYSICS LETTERS, 110(1). https://doi.org/10.1063/1.4973762

Sarkar, B., Mita, S., Reddy, P., Klump, A., Kaess, F., Tweedie, J., … Sitar, Z. (2017). High free carrier concentration in p-GaN grown on AlN substrates. APPLIED PHYSICS LETTERS, 111(3). https://doi.org/10.1063/1.4995239

Reddy, P., Washiyama, S., Kaess, F., Kirste, R., Mita, S., Collazo, R., & Sitar, Z. (2017). Point defect reduction in MOCVD (Al)GaN by chemical potential control and a comprehensive model of C incorporation in GaN. Journal of Applied Physics, 122(24), 245702. https://doi.org/10.1063/1.5002682

Kaess, F., Mita, S., Xie, J., Reddy, P., Klump, A., Hernandez-Balderrama, L. H., … Sitar, Z. (2016). Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition. JOURNAL OF APPLIED PHYSICS, 120(10). https://doi.org/10.1063/1.4962017

Alden, D., Guo, W., Kirste, R., Kaess, F., Bryan, I., Troha, T., … Sitar, Z. (2016). Fabrication and structural properties of AlN submicron periodic lateral polar structures and waveguides for UV-C applications. APPLIED PHYSICS LETTERS, 108(26). https://doi.org/10.1063/1.4955033

Rohrbaugh, N., Hernandez-Balderrama, L., Kaess, F., Kirste, R., Collazo, R., & Ivanisevic, A. (2016). HgNO3 sensitivity of AlGaN/GaN field effect transistors functionalized with phytochelating peptides. AIP ADVANCES, 6(6). https://doi.org/10.1063/1.4953806

Franke, A., Hoffmann, M. P., Kirste, R., Bobea, M., Tweedie, J., Kaess, F., … Sitar, Z. (2016). High reflectivity III-nitride UV-C distributed Bragg reflectors for vertical cavity emitting lasers. JOURNAL OF APPLIED PHYSICS, 120(13). https://doi.org/10.1063/1.4963831

Reddy, P., Washiyama, S., Kaess, F., Breckenridge, M. H., Hernandez-Balderrama, L. H., Haidet, B. B., … Sitar, Z. (2016). High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies. JOURNAL OF APPLIED PHYSICS, 119(14). https://doi.org/10.1063/1.4945775

Reddy, P., Hoffmann, M. P., Kaess, F., Bryan, Z., Bryan, I., Bobea, M., … Sitar, Z. (2016). Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control. JOURNAL OF APPLIED PHYSICS, 120(18). https://doi.org/10.1063/1.4967397

Franke, A., Hoffmann, P., Hernandez-Balderrama, L., Kaess, F., Bryan, I., Washiyama, S., … Sitar, Z. (2016). Strain engineered high reflectivity DBRs in the deep UV. GALLIUM NITRIDE MATERIALS AND DEVICES XI, Vol. 9748. https://doi.org/10.1117/12.2211700

Kaess, F., Reddy, P., Alden, D., Klump, A., Hernandez-Balderrama, L. H., Franke, A., … al. (2016). The effect of illumination power density on carbon defect configuration in silicon doped GaN. JOURNAL OF APPLIED PHYSICS, 120(23). https://doi.org/10.1063/1.4972468