@article{pauly_white_deegbey_fosu_keller_mcguigan_dianat_gabilondo_wong_murphey_et al._2024, title={Coordination of copper within a crystalline carbon nitride and its catalytic reduction of CO<sub>2</sub>}, volume={3}, ISSN={["1477-9234"]}, DOI={10.1039/d4dt00359d}, abstractNote={Crystallites of Cu-coordinated poly(triazine imide) were synthesized by flux methods and deposited from particle suspensions onto electrodes, yielding sizable current densities for the electrocatalytic reduction of CO2.}, journal={DALTON TRANSACTIONS}, author={Pauly, Magnus and White, Ethan and Deegbey, Mawuli and Fosu, Emmanuel Adu and Keller, Landon and Mcguigan, Scott and Dianat, Golnaz and Gabilondo, Eric and Wong, Jian Cheng and Murphey, Corban G. E. and et al.}, year={2024}, month={Mar} }
 @article{clerix_dianat_delabie_parsons_2023, title={In situ analysis of nucleation reactions during TiCl4/H2O atomic layer deposition on SiO2 and H-terminated Si surfaces treated with a silane small molecule inhibitor}, volume={41}, ISSN={["1520-8559"]}, url={https://doi.org/10.1116/6.0002493}, DOI={10.1116/6.0002493}, abstractNote={Small-molecule inhibitors have recently been introduced for passivation during area-selective deposition (ASD). Small silanes like (N,N-dimethylamino)trimethylsilane (DMATMS) selectively react with −OH sites on SiO2 to form a less reactive –OSi(CH3)3 terminated surface. The –OSi(CH3)3 surface termination can inhibit many atomic layer deposition (ALD) processes, including TiCl4/H2O ALD. However, the mechanisms by which ALD is inhibited and by which selectivity is eventually lost are not well understood. This study uses in situ Fourier-transform infrared spectroscopy to probe the adsorption of DMATMS on SiO2 and the subsequent reactions when the passivated surface is exposed to TiCl4/H2O ALD. The chemisorption of DMATMS on isolated –OH groups on SiO2 is shown to inhibit the reaction with TiCl4. Further, we find that starting with an inherently inhibiting H-terminated Si surface, DMATMS can also react with residual –OH groups and reduce the extent of nucleation. Finally, using Rutherford backscattering spectrometry, the effectiveness of DMATMS passivation on SiO2 and H-terminated Si is quantified during extended ALD cycle numbers. The insight into the mechanisms of passivation by DMATMS and passivation loss can enable the rational design of highly selective ASD processes by carefully matching compatible surfaces, passivating agents, and ALD precursors.}, number={3}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A}, author={Clerix, Jan-Willem J. and Dianat, Golnaz and Delabie, Annelies and Parsons, Gregory N.}, year={2023}, month={May} }
 @article{saare_dianat_parsons_2022, title={Comparative In Situ Study of the Initial Growth Trends of Atomic Layer-Deposited Al(2)O(3 )Films br}, volume={126}, ISSN={["1932-7455"]}, url={https://doi.org/10.1021/acs.jpcc.2c01033}, DOI={10.1021/acs.jpcc.2c01033}, abstractNote={In this work, we compare the initial growth trends of atomic layer-deposited aluminum oxide (Al2O3) using three different Al precursors and H2O as the oxygen source on hydroxyl-terminated silicon (Si-OH) and hydrogen-terminated silicon (Si-H) surfaces. Trimethylaluminum (TMA), triethylaluminum (TEA), and dimethylaluminum chloride (DMAC) are chosen as the Al precursors due to comparable variations between their structures. Thickness evolution obtained from in situ ellipsometry exhibits similar behavior for all three precursors with initially accelerated growth during the first cycle on the Si-OH starting surface, which then proceeds in a steady manner characteristic of atomic layer deposition (ALD). In situ Fourier transform infrared spectroscopy (FTIR) shows that at 200 °C both TEA and TMA react with above 85% of −OH ligands present on the initial Si-OH substrate and the subsequent H2O dose reacts with only ∼50% of the surface C–H groups, indicating incomplete removal of the methyl or ethyl ligands on the surface. Al2O3 growth on the Si-H surface exhibits a delay due to the lack of surface hydroxyl groups, leading to formation of Si-Me or Si-Et groups. A lower reactivity of DMAC compared to TMA and TEA results in a lower initial selectivity fraction. The results provide vital insight into the importance of precursor selection for area-selective ALD applications and open a pathway for realizing selective Al2O3 deposition based on inherent substrate selectivity.}, number={16}, journal={JOURNAL OF PHYSICAL CHEMISTRY C}, publisher={American Chemical Society (ACS)}, author={Saare, Holger and Dianat, Golnaz and Parsons, Gregory N.}, year={2022}, month={Apr}, pages={7036–7046} }
 @article{morgan_willis_dianat_peterson_mahle_parsons_2022, title={Toxin-Blocking Textiles: Rapid, Benign, Roll-to-Roll Production of Robust MOF-Fabric Composites for Organophosphate Separation and Hydrolysis}, volume={11}, ISSN={["1864-564X"]}, url={https://doi.org/10.1002/cssc.202201744}, DOI={10.1002/cssc.202201744}, abstractNote={Abstract}, journal={CHEMSUSCHEM}, author={Morgan, Sarah E. E. and Willis, Morgan L. L. and Dianat, Golnaz and Peterson, Gregory W. W. and Mahle, John J. J. and Parsons, Gregory N. N.}, year={2022}, month={Nov} }