Ge Yang

Bi₂O₃-ZrO₂ Polymer Composites: Evaluation of Structural, Chemical, and γ-ray and Charged Particle Shielding Properties

Cao, D., Bourham, M., & Yang, G. (2024, July 2). ACS APPLIED ENGINEERING MATERIALS, Vol. 7.

Crystal growth, structural and electronic characterizations of zero-dimensional metal halide (TEP)InBr₄ single crystals for X-ray detection

JOURNAL OF MATERIALS CHEMISTRY C, 11(43), 15357–15365.

Editorial: Perovskite and organic materials for radiation detectors

Basirico, L., Yang, G., & Sellin, P. (2023, July 5). FRONTIERS IN PHYSICS, Vol. 11.

Gel growth and characterization of Cs3Bi2Br9 perovskite single crystals for radiation detection

Frontiers in Physics, 11.

Effect of low-temperature annealing on Bi-poor Cs2AgBiBr6 single crystals

MATERIALS TODAY COMMUNICATIONS, 33.

Perovskite materials: from single crystals to radiation detection

Kim, D., & Yang, G. (2022, June 29). CRYSTENGCOMM.

Thermoluminescence and optically stimulated luminescence response of Al2O3 coatings deposited by mist-chemical vapor deposition

Radiation Physics and Chemistry, 191, 109860.

Gamma-Ray Detection Using Bi-Poor Cs2AgBiBr6 Double Perovskite Single Crystals

ADVANCED OPTICAL MATERIALS, 9(8).

Impact of selenium addition to the cadmium-zinc-telluride matrix for producing high energy resolution X-and gamma-ray detectors

SCIENTIFIC REPORTS, 11(1).

On optical properties and scintillation performance of emerging Ga2O3: Crystal growth, emission mechanisms and doping strategies

[Review of ]. MATERIALS RESEARCH BULLETIN, 144.

Recent advancements in using perovskite single crystals for gamma-ray detection

[Review of ]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 32(10), 12758–12770.

Enabling Ga2O3's neutron detection capability with boron doping and conversion layer

JOURNAL OF APPLIED PHYSICS, 128(15).

Fast X-ray detectors based on bulk beta-Ga2O3 (Fe)

JOURNAL OF MATERIALS SCIENCE, 55(22), 9461–9469.

Gamma radiation shielding properties of poly (methyl methacrylate) / Bi2O3 composites

NUCLEAR ENGINEERING AND TECHNOLOGY, 52(11), 2613–2619.

Machine learning enabled advanced manufacturing in nuclear engineering applications

NUCLEAR ENGINEERING AND DESIGN, 367.

Material defect study of thallium lead iodide (TlPbI3) crystals for radiation detector applications

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 954, 161516.

Quantum dot/polymer nanocomposite monolith for radiation detection

MATERIALS TODAY COMMUNICATIONS, 24.

Role of Lithium Codoping in Enhancing the Scintillation Yield of Aluminate Garnets

PHYSICAL REVIEW APPLIED, 13(6).

Towards radiation detection using Cs2AgBiBr6 double perovskite single crystals

Materials Letters, 269, 127667.

Evaluation of CdZnTeSe as a high-quality gamma-ray spectroscopic material with better compositional homogeneity and reduced defects

SCIENTIFIC REPORTS, 9.

Growth of CdMnTe free of large Te inclusions using the vertical Bridgman technique

JOURNAL OF CRYSTAL GROWTH, 509, 35–39.

Low temperature cathodoluminescence study of Fe-doped β-Ga2O3

Materials Letters, 257, 126744.

Optical and electrical properties of all-inorganic Cs2AgBiBr6 double perovskite single crystals

RSC ADVANCES, 9(41), 23459–23464.

Role of selenium addition to CdZnTe matrix for room-temperature radiation detector applications

SCIENTIFIC REPORTS, 9.

A 4×4 array module of position-sensitive virtual Frisch-grid CdZnTe detectors for gamma-ray imaging spectrometers

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 954.

Charge-transport properties of as-grown Cd1-xZnxTe1-ySey by the traveling heater method

AIP ADVANCES, 8(12).

Growth and characterization of detector-grade CdMnTe by the vertical Bridgman technique

AIP ADVANCES, 8(10).

Study of sub-pixel position resolution with time-correlated transient signals in 3D pixelated CdZnTe detectors with varying pixel sizes

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 884, 136–139.

A comparison of point defects in Cd1−xZnxTe1−ySey crystals grown by Bridgman and traveling heater methods

Journal of Applied Physics, 121(12), 125705.

Assessment of a new ZnO:Al contact to CdZnTe for X- and gamma-ray detector applications

AIP Advances, 7(9), 095216.

Direct observation of influence of secondary-phase defects on CZT detector response

Journal of Crystal Growth, 470, 99–103.

Using a pulsed laser beam to investigate the feasibility of sub-pixel position resolution with time-correlated transient signals in 3D pixelated CdZnTe detectors

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 867, 7–14.

Growth and characterization of CdMnTe by the vertical Bridgman technique

Journal of Crystal Growth, 437, 53–58.

Novel ZnO:Al contacts to CdZnTe for X- and gamma-ray detectors

Scientific Reports, 6(1).

Photocurrent response of B12As2 crystals to blue light, and its temperature- dependent electrical characterizations

AIP Advances, 6(2), 025206.

Point defects: Their influence on electron trapping, resistivity, and electron mobility-lifetime product in CdTexSe1−x detectors

Journal of Applied Physics, 119(2), 025702.

Use of high-granularity CdZnTe pixelated detectors to correct response non-uniformities caused by defects in crystals

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 805, 41–54.

An array of virtual Frisch-grid CdZnTe detectors and a front-end application-specific integrated circuit for large-area position-sensitive gamma-ray cameras

Review of Scientific Instruments, 86(7), 073114.

Analysis of Defects on Chemically-Treated CdZnTe Surfaces

Journal of Electronic Materials, 44(9), 3018–3022.

Compositional homogeneity and X-ray topographic analyses of CdTe Se1− grown by the vertical Bridgman technique

Journal of Crystal Growth, 411, 34–37.

High compositional homogeneity of CdTexSe1−x crystals grown by the Bridgman method

APL Materials, 3(2), 026102.

Material and detector properties of cadmium manganese telluride (Cd1−Mn Te) crystals grown by the modified floating-zone method

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 784, 33–36.

Post-growth annealing of Bridgman-grown CdZnTe and CdMnTe crystals for room-temperature nuclear radiation detectors

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 784, 51–55.

Research Update: Point defects in CdTexSe1−x crystals grown from a Te-rich solution for applications in detecting radiation

APL Materials, 3(4), 040702.

Structural, electrical, and optical properties of CdMnTe crystals grown by modified floating-zone technique

Electronic Materials Letters, 11(3), 500–504.

Evaluation of CdTexSe1−x crystals grown from a Te-rich solution

Journal of Crystal Growth, 389, 99–102.

Growth of CdTexSe1−x from a Te-rich solution for applications in radiation detection

Journal of Crystal Growth, 386, 43–46.

Novel Approach to Surface Processing for Improving the Efficiency of CdZnTe Detectors

Journal of Electronic Materials, 43(8), 2771–2777.

Publisher’s Note: “Use of high-granularity position sensing to correct response non-uniformities of CdZnTe detectors” [Appl. Phys. Lett. 104, 263503 (2014)]

Applied Physics Letters, 105(10), 109901.

Thermo-migration of Te inclusions in CdZnTe during post-growth annealing in a temperature-gradient field

Physica Status Solidi (c), 11(7-8), 1328–1332.

Topographic Evaluation of the Effect of Passivation in Improving the Performance of CdZnTe Detectors

Journal of Electronic Materials, 43(8), 2941–2946.

Use of high-granularity position sensing to correct response non-uniformities of CdZnTe detectors

Applied Physics Letters, 104(26), 263503.

Characterization and evaluation of extended defects in CZT crystals for gamma-ray detectors

Journal of Crystal Growth, 379, 46–56.

Development of Cadmium Magnesium Telluride (Cd1−xMgxTe) for room temperature X- and gamma-ray detectors

Journal of Crystal Growth, 379, 34–40.

Low-Temperature Photoluminescence Study of CdTe:In Crystals Annealed in Molten Bismuth

Journal of Electronic Materials, 42(11), 3138–3141.

Post-growth thermal annealing study of CdZnTe for developing room-temperature X-ray and gamma-ray detectors

Journal of Crystal Growth, 379, 16–20.

‘Star-like’ defects in Cd-annealed CdZnTe crystals-an experimental study of their origin and formation mechanism

Crystal Research and Technology, 48(4), 221–226.

Concentration of extended defects in CdZnTe single crystals: Effects of cooling rate after growth

Journal of Crystal Growth, 355(1), 84–87.

Investigation of Structural Defects in CdZnTe Detector-Grade Crystals

Journal of Electronic Materials, 41(10), 2908–2911.

Point Defects in Pb-, Bi-, and In-Doped CdZnTe Detectors: Deep-Level Transient Spectroscopy (DLTS) Measurements

Journal of Electronic Materials, 41(3), 488–493.

Post-growth Annealing of Cadmium Zinc Telluride Crystals for Room-Temperature Radiation Detectors

Journal of Electronic Materials, 41(10), 2912–2916.

Pt coldfinger improves quality of Bridgman-grown Cd0.9Zn0.1Te:Bi crystals

Journal of Crystal Growth, 338(1), 1–5.

Rejecting incomplete charge-collection events in CdZnTe and other semiconductor detectors

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 664(1), 317–323.

Temperature-gradient annealing of CdZnTe under Te overpressure

Journal of Crystal Growth, 354(1), 62–66.

Distribution of Te inclusions in a CdZnTe wafer and their effects on the electrical properties of fabricated devices

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 652(1), 146–148.

Effect of Te inclusions in CdZnTe crystals at different temperatures

Journal of Applied Physics, 109(4), 044504–044504-4.

Effect of extended defects in planar and pixelated CdZnTe detectors

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 652(1), 170–173.

Internal Electric Field Behavior of Cadmium Zinc Telluride Radiation Detectors Under High Carrier Injection

Journal of Electronic Materials, 40(8), 1689–1692.

Low-temperature spatially resolved micro-photoluminescence mapping in CdZnTe single crystals

Applied Physics Letters, 98(26), 261901.

Defect levels and thermomigration of Te precipitates in CdZnTe:Pb

Journal of Crystal Growth, 312(6), 781–784.

Effective Surface Passivation of CdMnTe Materials

Journal of Electronic Materials, 39(7), 1015–1018.

Extended defects in CdZnTe crystals: Effects on device performance

Journal of Crystal Growth, 312(11), 1795–1799.

Investigation of Cadmium Manganese Telluride Crystals for Room-Temperature Radiation Detection

Journal of Electronic Materials, 39(7), 1053–1057.

Variation of electric shielding on virtual Frisch-grid detectors

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 621(1-3), 424–430.

Internal Electric Field Investigations of a Cadmium Zinc Telluride Detector Using Synchrotron X-ray Mapping and Pockels Effect Measurements

Journal of Electronic Materials, 38(8), 1563–1567.

Defects in cadmium zinc telluride crystals revealed by etch-pit distributions

Journal of Crystal Growth, 310(21), 4493–4498.

Impurity gettering effect of Te inclusions in CdZnTe single crystals

Journal of Crystal Growth, 311(1), 99–102.

Correlation between Ingot Diameter and Crystal Properties of CdZnTe:In Grown by the Modified Bridgman Method

Crystal Growth & Design, 7(2), 435–438.

Effect of annealing on the residual stress and strain distribution in CdZnTe wafers

Journal of Crystal Growth, 305(1), 50–54.

Study on the behaviors of impurities in cadmium zinc telluride

Journal of Crystal Growth, 304(2), 313–316.

Effects of two-step annealing on properties of Cd1-xZnxTe single crystals

Transactions of Nonferrous Metals Society of China, 16, s174–s177.

Electrical properties and electrical field in depletion layer for CZT crystals

Transactions of Nonferrous Metals Society of China, 16, s75–s78.

Optical and electrical properties of indium-doped Cd0.9Zn0.1Te crystal

Journal of Crystal Growth, 295(2), 124–128.

Photoluminescence analysis of Cd1−xZnxTe single crystals annealed by a two-step method

Journal of Crystal Growth, 294(2), 250–253.

The study on the surface state of CdZnTe (110) surface

Applied Surface Science, 252(24), 8421–8423.

Effects of In doping on the properties of CdZnTe single crystals

Journal of Crystal Growth, 283(3-4), 431–437.

Effects of annealing on the properties of Au–Cd0.9Zn0.1Te contacts

Materials Science and Engineering: B, 123(2), 172–175.

Behaviors of impurities in Cd0.85Zn0.15Te crystals grown by vertical Bridgman method

Materials Science and Engineering: B, 113(1), 7–12.

Growth of In doped CdZnTe by vertical Bridgman method and the effect of In on the crystal properties

Journal of Crystal Growth, 265(1-2), 159–164.

Impurities in CdZnTe crystal grown by vertical Bridgman method

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 534(3), 511–517.