Works (41)

2013 journal article

Effect of GaAs interfacial layer on the performance of high bandgap tunnel junctions for multijunction solar cells

Applied Physics Letters, 103(10).

By: J. Samberg, C. Carlin, G. Bradshaw, P. Colter, J. Harmon, J. Allen, J. Hauser, S. Bedair

Source: NC State University Libraries
Added: August 6, 2018

2013 conference paper

Modeling an InGaP/AlGaAs tunnel junction containing an AlAs diffusion barrier

2013 ieee 39th photovoltaic specialists conference (pvsc), 2082–2085.

By: J. Hauser, Z. Carlin, J. Harmon, G. Bradshaw, J. Samberg, P. Colter, S. Bedair

Source: NC State University Libraries
Added: August 6, 2018

2010 journal article

Modeling of tunnel junctions for high efficiency solar cells

Applied Physics Letters, 97(4).

By: J. Hauser, Z. Carlin & S. Bedair

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

A new and improved physics-based model for MOS transistors

IEEE Transactions on Electron Devices, 52(12), 2640–2647.

By: J. Hauser

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

Intrinsic mobility evaluation of high-kappa gate dielectric transistors using pulsed I-d-V-g

IEEE Electron Device Letters, 26(8), 586–589.

By: C. Young, P. Zeitzoff, G. Brown, G. Bersuker, B. Lee & J. Hauser

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

Substrate voltage and accumulation-mode MOS varactor capacitance

IEEE Transactions on Electron Devices, 52(7), 1563–1567.

By: S. Wartenberg & J. Hauser

Source: NC State University Libraries
Added: August 6, 2018

2004 journal article

Enhancing the durability of linen-like properties of low temperature mercerized cotton

Textile Research Journal, 74(2), 146–154.

By: M. Lee, H. Park, K. Yoon & P. Hauser

Source: NC State University Libraries
Added: August 6, 2018

2003 journal article

The epHEMT gate at microwave frequencies

IEEE Transactions on Microwave Theory and Techniques, 51(6), 1718–1723.

By: S. Wartenberg & J. Hauser

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

Vertically scaled MOSFET gate stacks and junctions: How far are we likely to go?

IBM Journal of Research and Development, 46(2-3), 299–315.

By: C. Osburn, I. Kim, S. Han, I. De, K. Yee, S. Gannavaram, S. Lee, C. Lee ...

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Study of low-frequency charge pumping on thin stacked dielectrics

IEEE Transactions on Electron Devices, 48(12), 2754–2762.

By: C. Weintraub, E. Vogel, J. Hauser, N. Yang, V. Misra, J. Wortman, J. Ganem, P. Masson

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Time-dependent Si etch behavior and its effect on oxide/Si selectivity in CF4+D-2 electron cyclotron resonance plasma etching

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 19(3), 695–700.

By: K. Min, H. Lamb & J. Hauser

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

A two-dimensional numerical simulation of pulsed drain current transients in weak inversion and application to interface trap characterization on small geometry MOSFETs with ultrathin oxides

IEEE Transactions on Electron Devices, 47(11), 2236–2237.

By: K. Ahmed, J. Wortman & J. Hauser

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Analytic model of parasitic capacitance attenuation in CMOS devices with hyper-thin oxides

Electronics Letters, 36(20), 1699–1700.

By: K. Ahmed, E. Ibok & J. Hauser

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Comparative physical and electrical metrology of ultrathin oxides in the 6 to 1.5 nm regime

IEEE Transactions on Electron Devices, 47(7), 1349–1354.

By: K. Ahmed, E. Ibok, G. Bains, D. Chi, B. Ogle, J. Wortman, J. Hauser

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Effect of polysilicon gate type on the flatband voltage shift for ultrathin oxide-nitride gate stacks

IEEE Electron Device Letters, 21(4), 170–172.

By: Z. Wang, C. Parker, D. Hodge, R. Croswell, N. Yang, V. Misra, J. Hauser

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Estimation of the effects of remote charge scattering on electron mobility of n-MOSFET's with ultrathin gate oxides

IEEE Transactions on Electron Devices, 47(2), 440–447.

By: N. Yang, W. Henson, J. Hauser & J. Wortman

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Limitations of the modified shift-and-ratio technique for extraction of the bias dependence of L-eff and R-sd of LDD MOSFET's

IEEE Transactions on Electron Devices, 47(4), 891–895.

By: K. Ahmed, I. De, C. Osburn, J. Wortman & J. Hauser

Source: NC State University Libraries
Added: August 6, 2018

2000 chapter

Overview of semiconductor devices

In Handbook of semiconductor manufacturing technology. New York: Marcel Dekker.

By: W. Holten, J. Hauser, K. Kim & W. Lynch

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Surface residue island nucleation in anhydrous HF/alcohol vapor processing of Si surfaces

Journal of the Electrochemical Society, 147(9), 3512–3518.

By: R. Carter, J. Hauser & R. Nemanich

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Estimating oxide thickness of tunnel oxides down to 1.4 nm using conventional capacitance-voltage measurements on MOS capacitors

IEEE Electron Device Letters, 20(4), 179–181.

By: W. Henson, K. Ahmed, E. Vogel, J. Hauser, J. Wortman, R. Venables, M. Xu, D. Venables

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Gate quality ultrathin (2.5 nm) PECVD deposited oxynitride and nitrided oxide dielectrics

IEEE Electron Device Letters, 20(9), 442–444.

By: E. Ibok, K. Ahmed, M. Hao, B. Ogle, J. Wortman & J. Hauser

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Impact of tunnel currents and channel resistance on the characterization of channel inversion layer charge and polysilicon-gate depletion of sub-20-angstrom gate oxide MOSFET's

IEEE Transactions on Electron Devices, 46(8), 1650–1655.

By: K. Ahmed, E. Ibok, G. Yeap, Q. Xiang, B. Ogle, J. Wortman, J. Hauser

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Interfacial properties of ultrathin pure silicon nitride formed by remote plasma enhanced chemical vapor deposition

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(4), 1836–1839.

By: V. Misra, H. Lazar, Z. Wang, Y. Wu, H. Niimi, G. Lucovsky, J. Wortman, J. Hauser

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Modeling study of ultrathin gate oxides using direct tunneling current and capacitance-voltage measurements in MOS devices

IEEE Transactions on Electron Devices, 46(7), 1464–1471.

By: N. Yang, W. Henson, J. Hauser & J. Wortman

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Modeling the trends in valence-band electron tunneling in NMOSFETs with ultrathin SiO2 and SiO2/Ta2O5 dielectrics with oxide scaling

Microelectronic Engineering, 48(1-4), 295–298.

By: A. Shanware, H. Massoud, E. Vogel, K. Henson, J. Hauser & J. Wortman

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

The effects of Ge content in poly-Si1-xGex gate material on the tunneling barrier in PMOS devices

Microelectronic Engineering, 48(1-4), 39–42.

By: A. Shanware, H. Massoud, A. Acker, V. Li, M. Mirabedini, K. Henson, J. Hauser, J. Wortman

Source: NC State University Libraries
Added: August 6, 2018

1998 conference paper

Evaluation of 2.0 nm grown and deposited dielectrics in 0.1 ?m PMOSFETs

Rapid thermal and integrated processing VII: Symposium held April 13-15, 1998, San Francisco, California, U.S.A. (Materials Research Society symposium proceedings ; v.525), 163–170.

By: A. Srivastava, H. Heinisch, E. Vogel, C. Parker, C. Osburn, N. Masnari, J. Wortman, J. Hauser

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Modeled tunnel currents for high dielectric constant dielectrics

IEEE Transactions on Electron Devices, 45(6), 1350–1355.

By: E. Vogel, K. Ahmed, B. Hornung, W. Henson, P. McLarty, G. Lucovsky, J. Hauser, J. Wortman

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Optimization of nitrided gate dielectrics by plasma-assisted and rapid thermal processing

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 16(3 pt.2), 1721–1729.

By: G. Lucovsky, H. Niimi, Y. Wu, C. Parker & J. Hauser

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Ultrathin oxide-nitride gate dielectric MOSFET's

IEEE Electron Device Letters, 19(4), 106–108.

By: C. Parker, G. Lucovsky & J. Hauser

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Bias sweep rate effects on quasi-static capacitance of MOS capacitors

IEEE Transactions on Electron Devices, 44(6), 1009–1012.

By: J. Hauser

Source: NC State University Libraries
Added: August 6, 2018

1995 journal article

Effects of profile doped elevated source/drain structures on deep-submicron MOSFETs

Solid-State Electronics, 38(3), 573–579.

By: H. Tian, K. Kim, J. Hauser, N. Masnari & M. Littlejohn

Source: NC State University Libraries
Added: August 6, 2018

1995 patent

Three-zone rapid thermal processing system utilizing wafer edge heating means

Washington, DC: U.S. Patent and Trademark Office.

By: J. Hauser, F. Sorrell & J. Wortman

Source: NC State University Libraries
Added: August 6, 2018

1994 journal article

An evaluation of super-steep-retrograde channel doping for deep-submicron MOSFET applications

IEEE Transactions on Electron Devices, 41(10), 1880–1882.

By: H. Tian, R. Hulfachor, J. Ellis-Monaghan, K. Kim, M. Littlejohn, J. Hauser, N. Masnari

Source: NC State University Libraries
Added: August 6, 2018

1993 journal article

Center for Advanced Electronic Materials Processing

Proceedings of the IEEE, 81(1), 42–59.

By: N. Masnari, J. Hauser, G. Lucovsky, D. Maher, R. Markunas, M. Ozturk, J. Wortman

Source: NC State University Libraries
Added: August 6, 2018

1993 patent

Conical rapid thermal processing apparatus

Washington, DC: U.S. Patent and Trademark Office.

By: J. Wortman, F. Sorrell, J. Hauser & M. Fordham

Source: NC State University Libraries
Added: August 6, 2018

1993 book

Design and marketing of new products

Englewood Cliffs, NJ: Prentice Hall.

By: J. Glen L. Urban

Source: NC State University Libraries
Added: August 6, 2018

1987 book

Essentials of new product management

Englewood Cliffs, NJ: Prentice-Hall.

By: J. Glen L. Urban & N. Dholakia

Source: NC State University Libraries
Added: August 6, 2018

1982 journal article

Electron and hole mobilities in silicon as a function of concentration and temperature

IEEE Transactions on Electron Devices, 29(2), 292–295.

By: N. Arora, J. Hauser & D. Roulston

Source: NC State University Libraries
Added: August 6, 2018

1980 book

Design and marketing of new products

Englewood Cliffs, NJ: Prentice-Hall.

By: J. Glen L. Urban

Source: NC State University Libraries
Added: August 6, 2018

1977 journal article

Velocity-field characteristics of gaas with gamma-6(c)-l6(c)-x6(c) conduction-band ordering

Journal of Applied Physics, 48(11), 4587–4590.

By: M. Littlejohn, J. Hauser & T. Glisson

Source: NC State University Libraries
Added: August 6, 2018